EP0625286A1 - Module solaire a cellules empilees et circuit integre - Google Patents

Module solaire a cellules empilees et circuit integre

Info

Publication number
EP0625286A1
EP0625286A1 EP93902041A EP93902041A EP0625286A1 EP 0625286 A1 EP0625286 A1 EP 0625286A1 EP 93902041 A EP93902041 A EP 93902041A EP 93902041 A EP93902041 A EP 93902041A EP 0625286 A1 EP0625286 A1 EP 0625286A1
Authority
EP
European Patent Office
Prior art keywords
solar cell
electrode layer
thin
structuring
stack
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP93902041A
Other languages
German (de)
English (en)
Inventor
Wilhelm Dr. Kusian
Joze Prof. Dr. Furlan
Wolfgang Dr. Riedl
Hans Dr. Pfleiderer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of EP0625286A1 publication Critical patent/EP0625286A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H01L31/076—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Definitions

  • the new module structure is suitable for all integrated, structurable semiconductor materials and thus for almost all semiconductors suitable for thin-film solar cells.
  • these are amorphous layers made of silicon (a-Si: H) or its alloys, for example with germanium (a-Si / Ge: H) and cells made of pure germanium (a-Ge: H) or polycrystalline chalcopyrite materials, for example from copper indium diselenide or copper gallium diselenide.
  • the module structure according to the invention is always particularly advantageous when semiconductor layers which are as thin as possible are desired, that is to say all materials which, for example, show light aging or in which the production of thicker layers is technological is difficult.

Landscapes

  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Pour un module solaire à cellules empilées, il est proposé de disposer en alternance les cellules solaires en mode pin, nip, pin, etc., de structurer l'empilement de cellules solaires en forme de bandes et de réaliser le câblage par des structures d'électrode en peigne qui relient les côtés p des cellules solaires d'un empilement au côté n des cellules solaires de l'empilement voisin. Le module solaire pouvant être réalisé sous une forme intégrée est monté en parallèle à l'intérieur d'un empilement et en série entre les empilements. Par une répétition simple des opérations de fabrication, on peut ainsi réaliser des empilements de deux cellules solaires ou plus présentant une moindre altération à la lumière par rapport aux modules solaires connus.
EP93902041A 1992-02-04 1993-01-22 Module solaire a cellules empilees et circuit integre Withdrawn EP0625286A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE4203123 1992-02-04
DE4203123 1992-02-04
PCT/DE1993/000051 WO1993015527A1 (fr) 1992-02-04 1993-01-22 Module solaire a cellules empilees et circuit integre

Publications (1)

Publication Number Publication Date
EP0625286A1 true EP0625286A1 (fr) 1994-11-23

Family

ID=6450922

Family Applications (1)

Application Number Title Priority Date Filing Date
EP93902041A Withdrawn EP0625286A1 (fr) 1992-02-04 1993-01-22 Module solaire a cellules empilees et circuit integre

Country Status (4)

Country Link
US (1) US5527716A (fr)
EP (1) EP0625286A1 (fr)
JP (1) JPH07503105A (fr)
WO (1) WO1993015527A1 (fr)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4420434A1 (de) * 1994-06-10 1995-12-14 Siemens Ag Integriertes Strukturierungsverfahren für Dünnschichtsolarzellen in Stapelbauweise
JP3510740B2 (ja) * 1996-08-26 2004-03-29 シャープ株式会社 集積型薄膜太陽電池の製造方法
JPH11103079A (ja) * 1997-09-26 1999-04-13 Sanyo Electric Co Ltd 集積型光起電力装置の製造方法
US6166318A (en) 1998-03-03 2000-12-26 Interface Studies, Inc. Single absorber layer radiated energy conversion device
US6352777B1 (en) 1998-08-19 2002-03-05 The Trustees Of Princeton University Organic photosensitive optoelectronic devices with transparent electrodes
US6451415B1 (en) * 1998-08-19 2002-09-17 The Trustees Of Princeton University Organic photosensitive optoelectronic device with an exciton blocking layer
CN1237626C (zh) * 1998-08-19 2006-01-18 普林斯顿大学理事会 有机光敏光电器件
JP2001320067A (ja) * 2000-03-02 2001-11-16 Nippon Sheet Glass Co Ltd 光電変換装置
US6657378B2 (en) * 2001-09-06 2003-12-02 The Trustees Of Princeton University Organic photovoltaic devices
US6515217B1 (en) 2001-09-11 2003-02-04 Eric Aylaian Solar cell having a three-dimensional array of photovoltaic cells enclosed within an enclosure having reflective surfaces
US7208674B2 (en) * 2001-09-11 2007-04-24 Eric Aylaian Solar cell having photovoltaic cells inclined at acute angle to each other
US20060048811A1 (en) * 2004-09-09 2006-03-09 Krut Dimitri D Multijunction laser power converter
KR20070101917A (ko) * 2006-04-12 2007-10-18 엘지전자 주식회사 박막형 태양전지와 그의 제조방법
WO2008063704A2 (fr) * 2006-05-03 2008-05-29 Rochester Institute Of Technology Points ou traits quantiques nanostructurés dans des dispositifs photovoltaïques et leurs procédés
KR100874926B1 (ko) * 2007-06-07 2008-12-19 삼성전자주식회사 스택 모듈, 이를 포함하는 카드 및 이를 포함하는 시스템
US8026438B2 (en) * 2007-11-29 2011-09-27 Novasolar Holdings Limited Front transparent conductor assembly for thin-film photovoltaic cells and method
JP4966848B2 (ja) * 2007-12-27 2012-07-04 三洋電機株式会社 太陽電池モジュール及び太陽電池モジュールの製造方法
CN102084497B (zh) * 2008-03-11 2014-10-15 法国圣戈班玻璃厂 太阳能电池组件
EP2124264A1 (fr) 2008-05-21 2009-11-25 Applied Materials, Inc. Procédé et appareil de production d'un module de cellule solaire avec une formation de motifs par laser intégré
US20090291231A1 (en) * 2008-05-21 2009-11-26 Applied Materials, Inc. Method and apparatus for producing a solar cell module with integrated laser patterning
KR20100021045A (ko) * 2008-08-14 2010-02-24 주성엔지니어링(주) 박막형 태양전지 및 그 제조방법
US9379265B2 (en) 2008-09-29 2016-06-28 Sol Chip Ltd. Integrated circuit combination of a target integrated circuit, photovoltaic cells and light sensitive diodes connected to enable a self-sufficient light detector device
US8952473B2 (en) 2008-09-29 2015-02-10 Sol Chip Ltd. Integrated circuit combination of a target integrated circuit and a plurality of cells connected thereto using the top conductive layer
US8921967B2 (en) 2008-09-29 2014-12-30 Sol Chip Ltd. Integrated circuit combination of a target integrated circuit and a plurality of photovoltaic cells connected thereto using the top conductive layer
EP2180526A2 (fr) * 2008-10-23 2010-04-28 Samsung Electronics Co., Ltd. Dispositif photovoltaïque et son procédé de fabrication
JP2010149146A (ja) * 2008-12-25 2010-07-08 Hitachi High-Technologies Corp レーザ加工装置
JP5379845B2 (ja) * 2009-03-02 2013-12-25 株式会社カネカ 薄膜太陽電池モジュール
JP2010272738A (ja) * 2009-05-22 2010-12-02 Sanyo Electric Co Ltd 太陽電池モジュールの製造方法
WO2011114761A1 (fr) * 2010-03-18 2011-09-22 富士電機システムズ株式会社 Cellule solaire à couches minces et son procédé de fabrication
CN102110705B (zh) * 2010-12-14 2013-03-20 武汉迪源光电科技有限公司 一种交流发光二极管
US20140004648A1 (en) 2012-06-28 2014-01-02 International Business Machines Corporation Transparent conductive electrode for three dimensional photovoltaic device
US9379259B2 (en) 2012-11-05 2016-06-28 International Business Machines Corporation Double layered transparent conductive oxide for reduced schottky barrier in photovoltaic devices
DE102016116192B3 (de) 2016-08-31 2017-11-23 Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh Photovoltaikmodul mit integriert serienverschalteten Stapel-Solarzellen und Verfahren zu seiner Herstellung

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6175567A (ja) * 1984-09-20 1986-04-17 Sanyo Electric Co Ltd 光起電力装置
JPS62221167A (ja) * 1986-03-24 1987-09-29 Seiji Wakamatsu 多層型薄膜太陽電池
JPS63122283A (ja) * 1986-11-12 1988-05-26 Nippon Denso Co Ltd アモルフアス太陽電池
US4948436A (en) * 1988-02-05 1990-08-14 Siemens Aktiengesellschaft Thin-film solar cell arrangement
EP0334111A1 (fr) * 1988-03-24 1989-09-27 Siemens Aktiengesellschaft Procédé pour la connexion en série intégré de cellules solaires à couche épaisse et application du procédé à la fabrication d'une cellule solaire tandem
JPH01293575A (ja) * 1988-05-20 1989-11-27 Sanyo Electric Co Ltd 光起電力装置
EP0536431B1 (fr) * 1991-10-07 1994-11-30 Siemens Aktiengesellschaft Méthode pour travailler un dispositif à film mince par laser

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO9315527A1 *

Also Published As

Publication number Publication date
WO1993015527A1 (fr) 1993-08-05
JPH07503105A (ja) 1995-03-30
US5527716A (en) 1996-06-18

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