EP0616356A1 - Mikrospitzebildwiedergabeanordnung und Herstellungsverfahren - Google Patents

Mikrospitzebildwiedergabeanordnung und Herstellungsverfahren Download PDF

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Publication number
EP0616356A1
EP0616356A1 EP94400562A EP94400562A EP0616356A1 EP 0616356 A1 EP0616356 A1 EP 0616356A1 EP 94400562 A EP94400562 A EP 94400562A EP 94400562 A EP94400562 A EP 94400562A EP 0616356 A1 EP0616356 A1 EP 0616356A1
Authority
EP
European Patent Office
Prior art keywords
layer
grids
microtips
electrically insulating
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP94400562A
Other languages
English (en)
French (fr)
Other versions
EP0616356B1 (de
Inventor
Robert Meyer
Michel Borel
Brigitte Montmayeul
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
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Publication date
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Publication of EP0616356A1 publication Critical patent/EP0616356A1/de
Application granted granted Critical
Publication of EP0616356B1 publication Critical patent/EP0616356B1/de
Anticipated expiration legal-status Critical
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
    • H01J3/02—Electron guns
    • H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
    • H01J3/022—Electron guns using a field emission, photo emission, or secondary emission electron source with microengineered cathode, e.g. Spindt-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
    • H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
    • H01J31/123—Flat display tubes
    • H01J31/125—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection
    • H01J31/127—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection using large area or array sources, i.e. essentially a source for each pixel group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2329/00—Electron emission display panels, e.g. field emission display panels
    • H01J2329/86—Vessels
    • H01J2329/8625—Spacing members
    • H01J2329/863—Spacing members characterised by the form or structure

Definitions

  • the present invention relates to a microtip display device and a method of manufacturing this device.
  • a microtip display device comprises a source of electrons with microtip emissive cathodes and a cathodoluminescent anode comprising a layer of cathodoluminescent material and placed opposite the source of electrons with emissive microtip cathodes which is more simply called "cathode”.
  • detachment of powder, local degassing, an electrically charged spacer can trigger a regime of electric arc between the anode and the cathode, which results in the destruction of the display device over a more or less large area.
  • This arc regime phenomenon is all the more likely to occur when the anode voltage which is applied is high and the distance between the anode and the cathode is small.
  • microtip sources include parallel cathode conductors and grids which are parallel and form an angle with the cathode conductors.
  • These grids are generally metallic and, in the event of a short circuit or an arc regime between the cathodoluminescent anode and the microtip source of a device, nothing limits the electric current between the anode and the grids and the device. then risks being destroyed.
  • the object of the present invention is to remedy this drawback.
  • the means capable of avoiding the disturbance of the electric field comprise another thin layer which covers said thin insulating layer and which is sufficiently conductive to allow the flow of parasitic electrical charges which may be created during the operation of the device and which also has holes opposite the microtips.
  • This other thin layer which has an electrical conductivity sufficient to allow the flow of charges can be conductive but, preferably, it is resistive to allow only this flow.
  • the total thickness of the thin layer or layers formed on the grids can be for example between a few tens of nanometers and a few hundred nanometers.
  • the diameter of the holes formed in said thin insulating layer is greater than the diameter of the holes formed in the grids to avoid disturbance of the electric field created between the microtips and the grids, this thin insulating layer thus being over-etched.
  • said thin insulating layer can be over-etched and / or covered with the layer sufficiently conductive to allow the flow of parasitic electrical charges.
  • the device which is the subject of the invention may comprise, on the grids, a thin insulating layer, for example made of silica or silicon nitride, and a resistive layer, for example made of resistive silicon or of SnO2.
  • a thin insulating layer for example made of silica or silicon nitride
  • a resistive layer for example made of resistive silicon or of SnO2.
  • this device also comprises a resistive layer which is interposed between each cathode conductor and the corresponding microtips, the latter thus resting on this resistive layer.
  • Such a resistive layer is of the kind described in documents (2) and (3) mentioned above.
  • the present invention also relates to a method of manufacturing the microtip display device which is also the subject of the invention, method according to which said cathodoluminescent anode is formed on the first substrate, and the cathode conductors, said electrically insulating layer, a grid layer intended for forming the grids, the holes and then the microtips, this process being characterized in that said thin electrically insulating layer is further formed on the grid layer and in that said electrically insulating thin layer is associated with means capable of avoiding the disturbance, by this electrically insulating thin layer, of the electric field created between the microtips and the grids.
  • the grid layer is etched to form the grids, advantageously before the holes and the thin layer are formed.
  • said thin electrically insulating layer is formed before the holes.
  • This other thin layer which is sufficiently conductive to allow the flow of parasitic electrical charges, can be formed before or advantageously after the step of forming the holes.
  • a protective layer can be formed on said thin electrically insulating layer either directly or over said other thin layer sufficiently conductive to allow the flow of charges when it exists.
  • This protective layer can be deposited before or advantageously after the holes have been formed.
  • This protective layer can be removed by etching after the step of forming the microtips.
  • this protective layer is not removed or is only partially removed after the step of forming the microtips.
  • the layer or layers formed over the grids, which are resistive or conductive, can be deposited after the holes have been made.
  • This known device comprises a cathodoluminescent anode formed on a glass substrate 2 and comprising a conductive and transparent layer 4, for example made of ITO and, on this layer 4, a layer 6 of luminescent powder.
  • the device of FIG. 1 also comprises a source of microtip electrons formed on another insulating substrate 8 and comprising cathode conductors such as the conductor 10, a layer insulating 12 formed on these cathode conductors and grids such as the grid 14, formed on the insulating layer 12 and perpendicular to the cathode conductors 10.
  • a source of microtip electrons formed on another insulating substrate 8 and comprising cathode conductors such as the conductor 10, a layer insulating 12 formed on these cathode conductors and grids such as the grid 14, formed on the insulating layer 12 and perpendicular to the cathode conductors 10.
  • Microtips such as microtip 16 are formed on the latter, in holes 17 made in the grids and the insulating layer 12.
  • spacers such as the spacer 18 are disposed between the cathodoluminescent anode and the grids to maintain the rigidity of the device when a vacuum is created between the cathodoluminescent anode and the source of microtip electrons.
  • Such a device is extremely sensitive to short circuits, very unstable and difficult to control.
  • the device according to the invention differs from the device in FIG. 1 in that it further comprises an electrically insulating layer 20, formed on the grids and pierced opposite the microtips. , this layer 20 being provided to limit the current between the anode and the grids.
  • the device of FIG. 2 also comprises a layer 21 which covers the layer 20 and which is sufficiently conductive to allow the flow of parasitic electrical charges likely to be created during the operation of the device and which also has holes facing the microtips. .
  • This layer 21 avoids the disturbance, by layer 20, of the electric field created between the microtips and the grids when the device is operating.
  • the layer 21 does not exist and, to avoid disturbance of the electric field, the diameter of the holes formed in the layer 20 is greater than that of the holes formed in the grids.
  • the invention is preferably applied to microtip display devices whose electron source comprises a resistive layer between the cathode conductors and the microtips which rest on this resistive layer.
  • Figure 3 is a schematic and partial view of a device according to the invention which comprises such a resistive layer between the cathode conductors and the microtips.
  • This device of Figure 3 differs from the device of Figure 2 in that it comprises in addition a resistive layer 22 between the insulating layer 12 and the cathode conductors 24 which are here meshed as in document (3).
  • the device is thus protected against any risk of short circuit.
  • the most important advantage of the invention is that it makes it possible to increase the anode voltage and, possibly, to decrease the space between the anode and the source of microtip electrons without risk of electrical accident liable to destroy the device.
  • an insulating layer 26 of silica (FIG. 4) is deposited on the grids.
  • the thickness of this layer 26 is for example equal to 0.2 ⁇ m.
  • This layer 26 can be produced by chemical vapor deposition, by sputtering or by any other method of depositing thin layers.
  • This layer 28 is for example equal to 50 nm.
  • This layer 28 is preferably formed by evaporation by means of an electron gun or by spraying.
  • holes the diameter of which is of the order of 1.4 ⁇ m, are etched in the thin conductive layer 28, the insulating layer 12, the grid layer 14 and insulating layer 26, inside the mesh of the conductors cathodic, or more exactly plumb with the domains delimited by these meshes.
  • a wet etching process or a dry etching process can be used.
  • a reactive ion etching process is used to etch the metal layers and the insulating layers.
  • a chemical over-etching of the silica of the layer 12 is carried out, this over-etching being for example a few hundred nanometers (length e in FIG. 4), which makes it possible to enlarge the holes at the level of this layer 12.
  • an over-etching of the layer 26 is carried out in order to allow the grids to be released around the holes 30 and therefore to avoid a disturbance of the electric field (during operation of the device) between the microtips 16 and the grids, this disturbance being caused by a charging phenomenon of the insulating layer 26.
  • microtips 16 are then produced according to the method described in the document (1) mentioned above.
  • the contact points for the row conductors and the column conductors are released if necessary.
  • the thin conductive layer 28 can optionally be removed by appropriate etching.
  • the thin conductive layer (sufficiently conductive to allow the flow of charges) can be deposited after etching the holes, in which case the bottom of the holes is covered by this layer.
  • FIG. 5 schematically and partially illustrates this case where the thin conductive layer 28 is deposited after etching the holes and it can be seen that the bottom of the holes is covered by this fine conductive layer 28 (which covers the insulating layer 26 of silica already mentioned in the description of Figure 4).
  • microtips 16 are thus above the thin conductive layer.
  • the deposition of the thin conductive layer, after etching the holes, makes it possible to avoid etching of this layer.

Landscapes

  • Cold Cathode And The Manufacture (AREA)
  • Electrodes For Cathode-Ray Tubes (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
EP19940400562 1993-03-17 1994-03-15 Mikrospitzebildwiedergabeanordnung und Herstellungsverfahren Expired - Lifetime EP0616356B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9303072A FR2702869B1 (fr) 1993-03-17 1993-03-17 Dispositif d'affichage à micropointes et procédé de fabrication de ce dispositif.
FR9303072 1993-03-17

Publications (2)

Publication Number Publication Date
EP0616356A1 true EP0616356A1 (de) 1994-09-21
EP0616356B1 EP0616356B1 (de) 1998-05-27

Family

ID=9445062

Family Applications (1)

Application Number Title Priority Date Filing Date
EP19940400562 Expired - Lifetime EP0616356B1 (de) 1993-03-17 1994-03-15 Mikrospitzebildwiedergabeanordnung und Herstellungsverfahren

Country Status (4)

Country Link
EP (1) EP0616356B1 (de)
JP (1) JPH06325690A (de)
DE (1) DE69410512T2 (de)
FR (1) FR2702869B1 (de)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996006450A1 (fr) * 1994-08-24 1996-02-29 Pixtech S.A. Ecran plat de visualisation a haute tension inter-electrodes
WO1997042645A1 (en) * 1996-05-08 1997-11-13 Evgeny Invievich Givargizov Field emission triode, a device based thereon, and a method for its fabrication
EP0901689A1 (de) * 1997-02-03 1999-03-17 Motorola, Inc. Feldemissionsvorrichtung mit ladungsableitung
WO2001043156A1 (en) * 1999-12-10 2001-06-14 Motorola, Inc. Field emission device having surface passivation layer
EP1336980A1 (de) * 2002-02-19 2003-08-20 Commissariat A L'energie Atomique Kathodenstruktur mit auf einer Widerstandsschicht hergestellter emittierender Schicht
FR2836279A1 (fr) * 2002-02-19 2003-08-22 Commissariat Energie Atomique Structure de cathode pour ecran emissif

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3970887A (en) * 1974-06-19 1976-07-20 Micro-Bit Corporation Micro-structure field emission electron source
EP0172089A1 (de) * 1984-07-27 1986-02-19 Commissariat à l'Energie Atomique Bildanzeigevorrichtung mittels feldemissions angeregter Kathodolumineszenz
WO1989009479A1 (fr) * 1988-03-25 1989-10-05 Thomson-Csf Procede de fabrication de sources d'electrons du type a emission de champ, et son application a la realisation de reseaux d'emetteurs
EP0461990A1 (de) * 1990-06-13 1991-12-18 Commissariat A L'energie Atomique Elektronenquelle mit Mikropunktkathoden

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3970887A (en) * 1974-06-19 1976-07-20 Micro-Bit Corporation Micro-structure field emission electron source
EP0172089A1 (de) * 1984-07-27 1986-02-19 Commissariat à l'Energie Atomique Bildanzeigevorrichtung mittels feldemissions angeregter Kathodolumineszenz
WO1989009479A1 (fr) * 1988-03-25 1989-10-05 Thomson-Csf Procede de fabrication de sources d'electrons du type a emission de champ, et son application a la realisation de reseaux d'emetteurs
EP0461990A1 (de) * 1990-06-13 1991-12-18 Commissariat A L'energie Atomique Elektronenquelle mit Mikropunktkathoden

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996006450A1 (fr) * 1994-08-24 1996-02-29 Pixtech S.A. Ecran plat de visualisation a haute tension inter-electrodes
FR2724041A1 (fr) * 1994-08-24 1996-03-01 Pixel Int Sa Ecran plat de visualisation a haute tension inter-electrodes
WO1997042645A1 (en) * 1996-05-08 1997-11-13 Evgeny Invievich Givargizov Field emission triode, a device based thereon, and a method for its fabrication
EP0901689A1 (de) * 1997-02-03 1999-03-17 Motorola, Inc. Feldemissionsvorrichtung mit ladungsableitung
EP0901689A4 (de) * 1997-02-03 1999-10-13 Motorola Inc Feldemissionsvorrichtung mit ladungsableitung
WO2001043156A1 (en) * 1999-12-10 2001-06-14 Motorola, Inc. Field emission device having surface passivation layer
US6373174B1 (en) 1999-12-10 2002-04-16 Motorola, Inc. Field emission device having a surface passivation layer
EP1336980A1 (de) * 2002-02-19 2003-08-20 Commissariat A L'energie Atomique Kathodenstruktur mit auf einer Widerstandsschicht hergestellter emittierender Schicht
FR2836279A1 (fr) * 2002-02-19 2003-08-22 Commissariat Energie Atomique Structure de cathode pour ecran emissif
FR2836280A1 (fr) * 2002-02-19 2003-08-22 Commissariat Energie Atomique Structure de cathode a couche emissive formee sur une couche resistive
WO2003071571A1 (fr) * 2002-02-19 2003-08-28 Commissariat A L'energie Atomique Structure de cathode pour ecran emissif
US6917147B2 (en) 2002-02-19 2005-07-12 Commissariat A L'energie Atomique Cathode structure with emissive layer formed on a resistive layer
US7759851B2 (en) 2002-02-19 2010-07-20 Commissariat A L'energie Atomique Cathode structure for emissive screen

Also Published As

Publication number Publication date
FR2702869A1 (fr) 1994-09-23
DE69410512T2 (de) 1998-12-17
FR2702869B1 (fr) 1995-04-21
DE69410512D1 (de) 1998-07-02
JPH06325690A (ja) 1994-11-25
EP0616356B1 (de) 1998-05-27

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