EP0598755A1 - Verfahren zum herstellen von elektrolumineszenten siliziumstrukturen - Google Patents
Verfahren zum herstellen von elektrolumineszenten siliziumstrukturenInfo
- Publication number
- EP0598755A1 EP0598755A1 EP92915971A EP92915971A EP0598755A1 EP 0598755 A1 EP0598755 A1 EP 0598755A1 EP 92915971 A EP92915971 A EP 92915971A EP 92915971 A EP92915971 A EP 92915971A EP 0598755 A1 EP0598755 A1 EP 0598755A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- silicon
- silicon wafer
- layer
- generating
- acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 89
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 75
- 239000010703 silicon Substances 0.000 title claims abstract description 75
- 238000000034 method Methods 0.000 title claims abstract description 38
- 238000004519 manufacturing process Methods 0.000 title abstract description 20
- 239000002253 acid Substances 0.000 claims abstract description 27
- 238000007743 anodising Methods 0.000 claims abstract description 8
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 14
- 150000004767 nitrides Chemical class 0.000 claims description 9
- 238000001465 metallisation Methods 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 229910021426 porous silicon Inorganic materials 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 238000002513 implantation Methods 0.000 claims description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 4
- 230000000873 masking effect Effects 0.000 claims description 4
- 229920002120 photoresistant polymer Polymers 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 238000002048 anodisation reaction Methods 0.000 claims description 2
- RZVXOCDCIIFGGH-UHFFFAOYSA-N chromium gold Chemical compound [Cr].[Au] RZVXOCDCIIFGGH-UHFFFAOYSA-N 0.000 claims description 2
- 229910052736 halogen Inorganic materials 0.000 claims description 2
- 150000002367 halogens Chemical class 0.000 claims description 2
- 229910052753 mercury Inorganic materials 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 239000002019 doping agent Substances 0.000 claims 3
- 230000008021 deposition Effects 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims 1
- 238000005286 illumination Methods 0.000 abstract description 2
- 238000007654 immersion Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 19
- 230000007704 transition Effects 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 8
- 238000005424 photoluminescence Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- -1 GaAs compound Chemical class 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000003353 gold alloy Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002730 mercury Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000006862 quantum yield reaction Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- MNTPMEHIQKUBIC-UHFFFAOYSA-N silicon;hydrofluoride Chemical compound F.[Si] MNTPMEHIQKUBIC-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/32—Anodisation of semiconducting materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0054—Processes for devices with an active region comprising only group IV elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/34—Materials of the light emitting region containing only elements of Group IV of the Periodic Table
- H01L33/346—Materials of the light emitting region containing only elements of Group IV of the Periodic Table containing porous silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/96—Porous semiconductor
Definitions
- the present invention relates to a method for producing electroluminescent silicon structures.
- a band gap of a semiconductor material is understood to mean the difference between the energy levels of the valence band and the conduction band, which is occupied by electrons.
- the highest energetic state lies in the valence band directly below the lowest energetic state of the conduction band. This causes a direct transition of electrons into the valence band to result in their recombination with holes (positive charge carriers), which leads to the generation of photons whose energy corresponds to the bandgap of the semiconductor material.
- Typical materials with such a direct band transition are, for example, GaAs compound semiconductors, which for this reason are frequently used for the production of light-emitting elements.
- silicon is a semiconductor material with an indirect band transition.
- the highest energetic state in the valence band is offset from the lowest energetic state in the conduction band, so that there is no direct drop from Electrons can take place in the valence band.
- the electrons of such materials with an indirect band transition must combine both with holes and with phonons. The likelihood of this process is extremely low, since three particles are involved.
- porous silicon layers which are produced by anodizing in a hydrofluoric acid electrolyte, two-dimensional quantum bundles or quantum wires or quantum conductors are formed, which result in a change in the energy band gap of microporous silicon structures compared to single-crystal silicon.
- the present invention is based on the object of specifying a method for producing electroluminescent silicon structures.
- the invention is based on the knowledge that the method known in the prior art for producing photoluminescent silicon structures, in which a silicon wafer is introduced into an acid bath and anodized therein in order to produce a microporous silicon layer, for the production of electroluminescent silicon structures It can be further developed by illuminating the silicon wafer on its anodic side at least for a part of the time during which it is introduced into the acid bath and anodized, whereupon two contacts are generated with which a voltage is applied to the microporous silicon layer can be applied.
- FIG. 1 is a cross-sectional view of a production method according to the invention produced electroluminescent silicon structure
- FIG. 2 shows a device for carrying out essential method steps in the production method according to the invention.
- the silicon component shown in FIG. 1, which is designated in its entirety by reference number 1, is obtained in a manner known per se by separating a multiplicity of identical silicon components which are formed on a common silicon wafer.
- the silicon component 1 comprises a p-type substrate 2, on which an oxide layer 3 is arranged with a central recess 4, which in turn is covered by a nitride layer 5.
- a nitride layer 5 On the nitride layer 5 there is, for example, a ring-shaped metallization 6 in the form of a chrome-gold alloy running around the recess 4.
- the p-substrate 2 is followed by a p + doping region 7 which, like a trough, has an n + doping region lying directly below the recess 4 to form a pn junction
- the silicon within the n + doping region 8 and within a part of the p + doping region 7 is a microporous silicon layer 10.
- the pn junction 9 lies within the microporous silicon layer 10.
- a further nitride layer 11 covers the front of the component 1 with the exception of the recess 4 in the area of the microporous silicon layer
- first electrode 13 which can be formed, for example, by a 120 nm thick gold contact layer or by an approximately 200 nm thick indium tin oxide layer.
- the p-substrate 2 is provided with a second electrode 14 in the form of an ohmic contact.
- the manufacturing process of this silicon component 1 comprises the following process steps:
- the silicon oxide layer 2 serving as an implantation mask is applied to a silicon wafer, for example by thermal oxidation. Then this is structured using known photolithographic measures.
- a first doping step for p + doping of the lower doping region then takes place using this implantation mask, whereupon n + doping of an overlying doping region takes place with reduced implantation energy, whereupon a driving-in diffusion process for driving in the doping substances is carried out.
- This is followed by a process step of depositing the nitride layer 5 over the entire surface, onto which a chromium-gold metallization 6 is applied over the entire surface, which is then structured using known measures for producing the ring-shaped contact zone 6 .
- nitride layer 11 is then deposited over the entire surface, whereupon a photoresist (not shown) is applied and structured. After suitable photolithographic steps, the nitride layer 5, 11 is etched away in the region of the central recess 4 and in the region of the further recess 12 above the metallization, whereupon the photoresist is removed.
- the anodization area of the silicon wafer 20 can be limited laterally by an acid-resistant masking layer, the acid-resistant masking layer being preferred. is opaque.
- a silicon wafer 20 with a plurality of the silicon components 1 structured by the process steps just explained is now further treated in a manufacturing device 21 for carrying out the essential steps of the manufacturing method according to the invention to be explained below.
- the manufacturing device 21 comprises an acid basin 22, in which an acid bath 23 is contained, which contains two to fifty percent by weight of hydrofluoric acid and the rest of ethanol and water.
- An anode 24 and a cathode 25 are provided in the acid bath 23 in an opposing, spaced-apart arrangement.
- a holding device 26 is designed on its periphery in such a way that it lies sealingly against the walls of the acid basin 22 when it is inserted into the acid basin 22 from above.
- the holding device 26 has a central recess 27, at the location of which the silicon wafer 20 is held in a manner sealed at its edge regions.
- the arrangement of the holding device is thus such that a current flow between the anode 24 and the cathode 25 must pass through the silicon wafer 20 vertically to the main surfaces thereof.
- a lighting device 28 in the form of a mercury lamp or halogen lamp is arranged above the acid bath 23 or, in the case of an acid-proof design of the lighting device 28, within the acid bath 23 such that the silicon wafer 20 is illuminated from its anodic side. If the lighting device 28 is arranged outside the acid basin 22, it is preferred to use a (not shown) window to provide for the passage of light. If the lighting device 28 is arranged above the acid basin 22 in the acid bath 23, a mirror can also be provided for deflecting the rays toward the wafer.
- the lighting device can also be a laser.
- an argon ion laser with a wavelength of 488 nm and a surface power density of 5 W / cm 2 is preferred. In this case, it is possible to selectively create luminescent areas by selective anodizing.
- the silicon wafer 20 After the silicon wafer 20 has been inserted into the holding device 26, it is pushed into the acid basin 22 from above. Now the silicon wafer is anodized by applying a corresponding direct current to the anode 24 and the cathode 25 with a current density of 2 to 500 mA / cm 2 , the silicon wafer 20 converting the one in the area of the recesses 4 of the silicon components 1 ⁇ experiences crystalline silicon in a microporous, electroluminescent silicon layer 10. The process of anodizing in the acid bath and the illumination by the lighting device 28 is carried out with a time period such that the microporous silicon layer 10 extends beyond the pn junction 9 into the substrate 2. Typical anodizing and lighting times are between 10 s and 20 min.
- the silicon component After the silicon component has been rinsed, it is provided with the rear ohmic contact 14 and with the transparent electrode 13 on the front.
- the front electrode can be realized by applying a gold cone with a thickness of 120 nm or by applying an indium tin oxide layer with a thickness of 200 nm. After separating the silicon components 1 by appropriately dividing the silicon wafer, the element is finished, apart from a housing.
- the silicon component 1 produced by the method according to the invention has a pn junction within the porous silicon layer 10.
- a pn junction is considered to be preferred for increasing the quantum yield.
- the pn junction is not necessary for the basic functionality of the element, so that the n + doping region 8 can be omitted.
- opposite doping polarities can be used compared to the exemplary embodiment.
- the second electrode 14 it is not necessary for the second electrode 14 to be in the form of a back ohmic contact on the back of the substrate 2. Any type of contacting to the substrate 2, which can also be implemented on the front side, is possible.
- contacts can also be formed in an interdigital structure on the microporous layer by the upper metallization.
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Led Devices (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE4126955 | 1991-08-14 | ||
DE4126955A DE4126955C2 (de) | 1991-08-14 | 1991-08-14 | Verfahren zum Herstellen von elektrolumineszenten Siliziumstrukturen |
PCT/DE1992/000598 WO1993004503A1 (de) | 1991-08-14 | 1992-07-20 | Verfahren zum herstellen von elektrolumineszenten siliziumstrukturen |
Publications (1)
Publication Number | Publication Date |
---|---|
EP0598755A1 true EP0598755A1 (de) | 1994-06-01 |
Family
ID=6438333
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP92915971A Withdrawn EP0598755A1 (de) | 1991-08-14 | 1992-07-20 | Verfahren zum herstellen von elektrolumineszenten siliziumstrukturen |
Country Status (5)
Country | Link |
---|---|
US (1) | US5458735A (ja) |
EP (1) | EP0598755A1 (ja) |
JP (1) | JP2663048B2 (ja) |
DE (1) | DE4126955C2 (ja) |
WO (1) | WO1993004503A1 (ja) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3243303B2 (ja) * | 1991-10-28 | 2002-01-07 | ゼロックス・コーポレーション | 量子閉じ込め半導体発光素子及びその製造方法 |
US5285078A (en) * | 1992-01-24 | 1994-02-08 | Nippon Steel Corporation | Light emitting element with employment of porous silicon and optical device utilizing light emitting element |
DE4304846A1 (de) * | 1993-02-17 | 1994-08-18 | Fraunhofer Ges Forschung | Verfahren und Anordnung zur Plasma-Erzeugung |
DE4315075A1 (de) * | 1993-02-17 | 1994-11-10 | Fraunhofer Ges Forschung | Anordnung zur Plasmaerzeugung |
JPH06338631A (ja) * | 1993-03-29 | 1994-12-06 | Canon Inc | 発光素子及びその製造方法 |
US5689603A (en) * | 1993-07-07 | 1997-11-18 | Huth; Gerald C. | Optically interactive nanostructure |
DE4345229C2 (de) * | 1993-09-30 | 1998-04-09 | Reinhard Dr Schwarz | Verfahren zum Herstellen von lumineszenten Elementstrukturen und Elementstrukturen |
DE4342527A1 (de) * | 1993-12-15 | 1995-06-22 | Forschungszentrum Juelich Gmbh | Verfahren zum elektrischen Kontaktieren von porösem Silizium |
US5510633A (en) * | 1994-06-08 | 1996-04-23 | Xerox Corporation | Porous silicon light emitting diode arrays and method of fabrication |
KR0169344B1 (ko) * | 1994-12-16 | 1999-02-01 | 심상철 | 바이어스 방법에 의해 형성된 두께가 매우 얇고 균일한 단결정 실리콘 박막을 갖는 에스-오-아이 웨이퍼의 제조방법 및 그 구조 |
GB2299204A (en) * | 1995-03-20 | 1996-09-25 | Secr Defence | Electroluminescent device |
SE510760C2 (sv) * | 1995-03-29 | 1999-06-21 | Thomas Laurell | Bärarmatris för integrerade mikroanalyssystem, förfarande för framställning därav och användning därav |
DE19638881A1 (de) * | 1996-09-21 | 1998-04-02 | Forschungszentrum Juelich Gmbh | Verfahren und Vorrichtung zur beleuchtungsunterstützten Strukturierung von porösem Silicium |
JP3490903B2 (ja) * | 1997-09-11 | 2004-01-26 | Kddi株式会社 | 半導体発光素子およびその製造方法 |
FR2779006B1 (fr) * | 1998-05-19 | 2003-01-24 | St Microelectronics Sa | Procede de formation de silicium poreux dans un substrat de silicium, en particulier pour l'amelioration des performances d'un circuit inductif |
US6103541A (en) * | 1998-10-29 | 2000-08-15 | Industrial Technology Research Institute | Encapsulation method of an organic electroluminescent device |
US6417069B1 (en) * | 1999-03-25 | 2002-07-09 | Canon Kabushiki Kaisha | Substrate processing method and manufacturing method, and anodizing apparatus |
JP5087855B2 (ja) * | 2006-04-05 | 2012-12-05 | 株式会社Sumco | 熱処理評価用ウェーハ、熱処理評価方法、および半導体ウェーハの製造方法 |
US8044379B2 (en) * | 2006-10-05 | 2011-10-25 | Hitachi Chemical Co., Ltd. | Well-aligned, high aspect-ratio, high-density silicon nanowires and methods of making the same |
US8450127B2 (en) * | 2007-09-10 | 2013-05-28 | The Governors Of The University Of Alberta | Light emitting semiconductor diode |
US8748908B2 (en) | 2012-05-07 | 2014-06-10 | Sufian Abedrabbo | Semiconductor optical emission device |
ITUB20152264A1 (it) * | 2015-07-17 | 2017-01-17 | St Microelectronics Srl | Dispositivo ad emissione di luce in silicio poroso e relativo metodo di fabbricazione |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6027179B2 (ja) * | 1975-11-05 | 1985-06-27 | 日本電気株式会社 | 多孔質シリコンの形成方法 |
JPS5270782A (en) * | 1975-12-10 | 1977-06-13 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device |
US4684964A (en) * | 1980-10-08 | 1987-08-04 | Rca Corporation | Silicon light emitting device and a method of making the device |
GB8315308D0 (en) * | 1983-06-03 | 1983-07-06 | Jenkins W N | Arc deposition of metal onto substrate |
JPS61179581A (ja) * | 1985-02-04 | 1986-08-12 | Seiko Epson Corp | Si発光ダイオ−ド |
US4884112A (en) * | 1988-03-18 | 1989-11-28 | The United States Of America As Repressented By The Secretary Of The Air Force | Silicon light-emitting diode with integral optical waveguide |
GB8927709D0 (en) * | 1989-12-07 | 1990-02-07 | Secretary Of The State For Def | Silicon quantum wires |
US5206523A (en) * | 1991-08-29 | 1993-04-27 | Goesele Ulrich M | Microporous crystalline silicon of increased band-gap for semiconductor applications |
US5285078A (en) * | 1992-01-24 | 1994-02-08 | Nippon Steel Corporation | Light emitting element with employment of porous silicon and optical device utilizing light emitting element |
US5331180A (en) * | 1992-04-30 | 1994-07-19 | Fujitsu Limited | Porous semiconductor light emitting device |
US5272355A (en) * | 1992-05-20 | 1993-12-21 | Spire Corporation | Optoelectronic switching and display device with porous silicon |
US5301204A (en) * | 1992-09-15 | 1994-04-05 | Texas Instruments Incorporated | Porous silicon as a light source for rare earth-doped CaF2 laser |
US5324965A (en) * | 1993-03-26 | 1994-06-28 | The United States Of America As Represented By The Secretary Of The Army | Light emitting diode with electro-chemically etched porous silicon |
US5348627A (en) * | 1993-05-12 | 1994-09-20 | Georgia Tech Reserach Corporation | Process and system for the photoelectrochemical etching of silicon in an anhydrous environment |
-
1991
- 1991-08-14 DE DE4126955A patent/DE4126955C2/de not_active Expired - Fee Related
-
1992
- 1992-07-20 EP EP92915971A patent/EP0598755A1/de not_active Withdrawn
- 1992-07-20 US US08/193,085 patent/US5458735A/en not_active Expired - Fee Related
- 1992-07-20 WO PCT/DE1992/000598 patent/WO1993004503A1/de not_active Application Discontinuation
- 1992-07-20 JP JP5504006A patent/JP2663048B2/ja not_active Expired - Lifetime
Non-Patent Citations (1)
Title |
---|
See references of WO9304503A1 * |
Also Published As
Publication number | Publication date |
---|---|
DE4126955C2 (de) | 1994-05-05 |
DE4126955A1 (de) | 1993-02-18 |
US5458735A (en) | 1995-10-17 |
JP2663048B2 (ja) | 1997-10-15 |
JPH06509685A (ja) | 1994-10-27 |
WO1993004503A1 (de) | 1993-03-04 |
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