EP0482215A1 - Method of manufacturing thermoelectric device - Google Patents

Method of manufacturing thermoelectric device Download PDF

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Publication number
EP0482215A1
EP0482215A1 EP91908865A EP91908865A EP0482215A1 EP 0482215 A1 EP0482215 A1 EP 0482215A1 EP 91908865 A EP91908865 A EP 91908865A EP 91908865 A EP91908865 A EP 91908865A EP 0482215 A1 EP0482215 A1 EP 0482215A1
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EP
European Patent Office
Prior art keywords
solder
thermoelectric
plated layer
heat exchange
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP91908865A
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German (de)
English (en)
French (fr)
Other versions
EP0482215A4 (enrdf_load_stackoverflow
Inventor
Masao Kabushiki Kaisha Komatsu Yamashita
Hisaakira Kabushiki Kaisha Komatsu Imaizumi
Yukoh 76-2 Fukuura Yugawara-Machi Mori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Techxiv Corp
Komatsu Ltd
Original Assignee
Komatsu Ltd
Komatsu Electronic Metals Co Ltd
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Publication date
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Application filed by Komatsu Ltd, Komatsu Electronic Metals Co Ltd filed Critical Komatsu Ltd
Publication of EP0482215A1 publication Critical patent/EP0482215A1/en
Publication of EP0482215A4 publication Critical patent/EP0482215A4/xx
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/81—Structural details of the junction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01—Manufacture or treatment

Definitions

  • thermoelectric apparatus relates to methods of making thermoelectric apparatus, and more particularly to a method of forming electrodes of a thermoelectric element couple of the apparatus.
  • thermoelectric element composed of a PN element couple formed by joining a P-type semiconductor and an N-type semiconductor together with a metal interposed therebetween, which utilizes so called Peltier effect in which one end of the couple is heated while the other end is cooled down according to a direction of a current flowing through the junction thereof, has been expected for use in various devices such as a portable cooler, since the thermoelectric element is simple in structure and small in size.
  • thermomodule formed by integrating a plurality of such thermoelectric elements is configured such that a plurality of PN element couples 13 are sandwiched between a first and a second heat exchange substrates 11 and 12 of an insulating substrate having a high thermal conductivity such as a ceramics substrate so as to have a high thermal contactivity to the substrates 11 and 12, and each element couple 13 is connected in series with a first and a second electrodes 14 and 15.
  • the first and the second electrodes 14 and 15 that are usually made of a copper plate so as to endure a large electric current flowing therethrough are fixed on a conductor layer pattern formed on the surfaces of the heat exchange substrates 11 and 12 through a melting layer such as a solder.
  • thermoelectric elements 13a and N-type thermoelectric elements 13b are alternately fixed in pairs on the first and the second electrodes through the solder layer to form the PN element couples 13 as being connected in series.
  • the heat exchange substrate In order to increase the heat exchange efficiency, it is necessary to configure the heat exchange substrate with an insulating material having a high thermal conductivity, and also in order to prevent the deterioration due to thermal distortion, a thermal expansion coefficient of the material should be small.
  • the silicon carbide ceramics has the thermal conductivity of 2.7W cm ⁇ 1K ⁇ 1, that is, more than nine times as high as alumina, and has the thermal expansion coefficient of 3.7x10 ⁇ 7K ⁇ 1, that is, half as small as the coefficient of alumina ceramics. Therefore, a thermoelectric apparatus using the silicon carbide ceramics as the heat exchange substrate material is not damaged by a change in temperature. Thus, a reliable thermoelectric apparatus having a high heat exchange efficiency can be obtained.
  • thermoelectric apparatus structure it has been proposed to configure the electrodes by a thick film conductor layer pattern formed on the surface of the heat exchange substrate in order to improve the assembly efficiency in the positioning and fixation of the electrodes to the heat exchange substrate.
  • thermoelectric apparatus having such a configuration as described above, since the positioning and fixation of the electrode plates to the conductor pattern on the heat exchange substrate are unnecessary and the overall process is greatly simplified, any misalignment of the conductor pattern and the electrodes does not occur and thus the reliability of the apparatus can be enhanced.
  • thermoelectric elements are fixed on the heat exchange substrate through a solder
  • a process is employed in which a preliminary solder is formed on the thermoelectric elements as well as on the electrode pattern of the heat exchange substrates for fixing purposes.
  • the conventionally practiced method is that first slicing a material 13 (FIG. 7(a)), forming a nickel plated layer 2 on the surface of the sliced material for preventing the element diffusion (FIG. 7(b)), and forming a solder layer 3S on the nickel plated layer 2 by rubbing on a heated plate being wet with solder, or by applying a solder by hand with use of a soldering iron (FIG. 7(c)), and dividing the resulting material (FIG. 7(d)).
  • thermoelectric elements are fixed on the electrode patterns 14 and 15 of the heat exchange substrates 11 and 12 (FIG. 7(e)), and if the solder coating is too thick, an electrical/thermal short circuit occurs due to deposition of possible excess solder. If the solder coating is too thin, an electrical/thermal contact resistance between the elements and the electrodes increases. Furthermore, if condensed moisture enters into gaps between the elements and the electrodes and freezes when the apparatus is electrified, the junction is damaged. The problem that the elements are unbalanced or irregular in height may be an extreme obstacle to automatic mounting.
  • the method of rubbing the sliced surface on the heated plate is apt to be a cause of lowering the assembling yield since it is difficult to equally apply the solder.
  • the method of applying a solder by hand with use of a soldering iron has the problems that it is unsuitable for mass production since it requires skillfulness and many processing steps and that it is difficult to apply the solder equally. Especially, when the solder having a high melting point is used, the working efficiency is lowered.
  • the solder composition is limited, and the solder having a high melting point or any optional composition cannot be selected.
  • a recent trend is that the solder having a high melting point is required by some users to raise the heat-resistant limit temperature of the apparatus.
  • thermoelectric elements with a uniform solder layer and to provide a thermoelectric apparatus with a high reliability and suitable for mass production.
  • thermoelectric elements of the thermoelectric apparatus are formed by first forming a solder plated layer on each surface of P and N type semiconductors having Peltier effect and then cutting each semiconductor into a required shape.
  • the solder plating process is characterized by forming a solder plated layer having a composition including as main solder components, tin (Sn): 70-99.95% and antimony (Sb): 0.05-30% on each surface of the P and N type semiconductors.
  • solder plated layer having a composition including, as main components, tin (Sn): 10-99.8% and lead (Pb): 0.2-90% on each surface of the P and N type semiconductors.
  • solder plating layer having a composition including, as main components, tin (Sn): 60-99.9% and copper (Cu): 0.01-40% on each surface of the P and N type semiconductors.
  • solder plated layer having a composition including, as main components, tin (Sn): 95-99.9% and germanium (Ge): 0.1-5% on each surface of the P and N type semiconductors.
  • solder plated layer having a composition including, as main components, lead (Pb): 59-95% and indium (In): 5-50% on each surface of the P and N type semiconductors.
  • the thermal electric elements are formed by first forming a solder plated layer on each surface of the P and N type semiconductors having Peltier effect, and then cutting each semiconductor into a required shape, the solder layer having a uniform thickness can be very easily obtained.
  • thermoelectric apparatus having a high junction strength and stable characteristics can be obtained when the solder plated layer having the composition including, as the main components, tin (Sn): 70-99.95% and antimony (Sb): 0.05-30% is used. If antimony content is lower than 0.05%, the solder strength gets lower. If it is more than 30%, the wettability of the solder gets lower and the range of solidifying temperature becomes excessively wide which causes segregation, and as a result, the quality becomes unstable.
  • thermoelectric apparatus having a high junction strength and stable characteristics can be obtained when the solder plated layer having the composition including, as the main components, tin (Sn): 10-99.8% and lead (Pb): 0.2-90% is used. If the proportion of the lead content is lower than 0.2%, the solder strength gets lower. If it is more than 90%, the wettability gets lower.
  • thermoelectric apparatus having a high junction strength and stable characteristics can be obtained when the solder plated layer having the composition including, as the main components, tin (Sn): 60-99.9% and copper (Cu): 0.01-40% is used. If copper content is lower than 0.01%, the solder strength gets lower. If it is more than 40%, the wettability of solder gets lower and the range of solidifying temperature becomes excessively wide which causes segregation, and as the result, the quality becomes unstable.
  • thermoelectric apparatus having a high junction strength and stable characteristics can be obtained when the solder plated layer having the composition including,as the main components, tin (Sn): 95-99.9% and germanium (Ge): 0.1-5% is used. If germanium content is lower than 0.1%, the solder strength gets lower. If it is more than 5%, the wettability of solder gets lower and the range of solidifying temperature becomes excessively wide which causes segregation, and as a result, the quality becomes unstable.
  • thermoelectric apparatus having a high junction strength and stable characteristics can be obtained when the solder plated layer having the composition including, as the main components, lead (Pb): 50-95% and indium (In): 5-50% is used. If indium content is lower than 5%, the wettability of the solder gets lower. If it is more than 50%, the solder strength gets lower.
  • FIG. 1 shows a thermoelectric apparatus as an embodiment of the present invention
  • FIG. 2 is an enlarged sectional view of the essential portion of the apparatus
  • FIGS. 3(a)-3(h) show the steps of making the thermoelectric apparatus
  • FIGS. 4(a)-4(J) show the steps of making a heat exchange substrate of the thermoelectric apparatus as a second embodiment of the present invention
  • FIGS. 5(a)-5(b) show a part of modifications of the steps of making the thermoelectric apparatus
  • FIG. 6 shows a conventional thermoelectric apparatus
  • FIGS. 7 (a)-7(f) show the steps of making the conventional thermoelectric elements.
  • FIG. 1 shows the appearance of a thermoelectric apparatus as an example of the present invention
  • FIGS. 2(a) and 2(b) are enlarged sectional views of the essential portion of the thermoelectric apparatus.
  • thermoelectric apparatus uses conventional alumina ceramics substrates as a first and a second heat exchange substrates 4a and 4b.
  • thermoelectric elements include a nickel plated layer 2 and a 60Sn-40Pb solder plated layer 3 formed on both the end surfaces of P type and N type Bi-Te semiconductor substrates 1a, 1b, as shown in FIG. 2.
  • thermoelectric element 10a and an N type thermoelectric element 10b are fixed on a three-layered electrode pattern of a thick copper plated layer 5 having a coating thickness of 200 ⁇ m, a nickel plated layer 2 having a coating thickness of 5 ⁇ m and a Sn-Pb solder plated layer 6 having a coating thickness of 5 ⁇ m.
  • formed on the other surface is a three-layered electrode pattern E of the thick copper plated layer 5 having a coating thickness of 200 ⁇ m, and the nickel plated layer 2 having a coating thickness of 5 ⁇ m and a Sn-Pb solder plated layer 6 having a coating thickness of 5 ⁇ m.
  • a first heat exchange substrate 1 has a structure similar to the second heat exchange substrate 2 although no enlarged view of the essential portion of the substrate 1 is shown.
  • thermoelectric elements 1a and 1b are connected by the electrode patterns on the first and second heat exchange substrates 4a, 4b, by solder melting to construct PN element couples 1.
  • PN element couples are connected in series, and a first electrode lead 7 and a second electrode lead 8 are disposed on the corresponding electrode patterns that are positioned at both ends of the circuit.
  • thermoelectric apparatus The following is a description of the method of making the thermoelectric apparatus.
  • thermoelectric elements First, the method of making the thermoelectric elements will be described.
  • a Bi-Te semiconductor wafer 10a containing P type impurities was sliced to a size of 30 x 30 x 0.96t, as shown in FIG. 3(a).
  • Ni nickel plated layer 2 having a coating thickness of 5 ⁇ m was formed on both surfaces of the slice by the electroless plating as shown in FIG. 3(b).
  • an Sn-Pb eutectic solder plated layer 3 having a coating thickness of 20 ⁇ m was formed by a sulfonic acid bath, as shown in FIG. 3(c).
  • the composition of the Sn-Pb eutectic solder was Sn 60%-Pb 40%.
  • thermoelectric element 1a sized 0.64 x 0.64 x 0.96t was formed by dicing, as shown in FIG. 3(d).
  • thermoelectric elements 1b sized 0.64 x 0.64 x 0.96t was formed from a Bi-Te semiconductor wafer 1 containing N type impurities as a starting material.
  • a thick copper plated layer 5 having a coating thickness of 200 ⁇ m was formed on a surface of an alumina (A12O3 ) substrate 4 sized 8.7 x 8.7 x 0.635t, and patterned by etching.
  • an electroless nickel plating 2 was performed on the patterned layer in order to prevent the element diffusion and to improve solder adhesion, the resulting semi-finished article was rubbed to a heated plate that was heated to 230°C and wetted with the Sn-Pb eutectic solder (Sn60%-Pb40%) 6. It was then confirmed that the solder was applied on the whole nickel plated surface, and the substrate was then wiped with fluorine rubber to remove the most of solder deposited on the surface.
  • thermoelectric elements 1a, 1b having the solder layers on the electrode surfaces thereof were positioned with a jig (not shown) and mounted automatically on the solder pattern 6 of one of the first and the second heat exchange substrates thus formed, for example, the second heat exchange substrate 2 were heated from the back side (FIG. 3(f)).
  • the second heat exchange substrate was placed, a weight of 40g was put on the top of the substrate, the whole was heated for 20 minutes in the vapor of Fluorinate having a boiling point of 253°C to fix the low temperature side electrode pattern of the second heat exchange substrate to the P and N type thermoelectric elements (FIG. 3(g)).
  • thermoelectric apparatus thus formed was highly reliable because the solder had a coating thickness prescribable with high accuracy, as well as spread with high flatness.
  • the heat exchange substrates and the electrode patterns were closely joined with a high pattern accuracy.
  • thermoelectric apparatuses 8 thermoelectric apparatuses were produced and the lowest temperatures attained were measured under a vacuum of 10 ⁇ 5 Torr. The result is shown in Table 1 below.
  • thermoelectric apparatus was joined to a constant temperature plate of 27°C with 47°C solder for measuring purposes.
  • thermoelectric apparatuses were electrified alternately by changing the polarities in the air so as to repeat a cycle of cooling and heating.
  • thermoelectric apparatus After 15 cycles of this process were repeated and the moisture of the thermoelectric apparatus was removed. The lowest temperatures attained were measured under a vacuum of 10 ⁇ 5 Torr. The result is shown in Table 2 below.
  • the composition of the solder used in this example was 98Sn-2Sb of which the melting point was 232°C.
  • the remaining structure was exactly the same as that of the Example 1.
  • thermoelectric elements were formed using a sulfuric acid bath when the thermoelectric elements were formed.
  • the 98Sn-2Sb solder layer was formed on an alumina substrate by rubbing the alumina substrate having a copper plated layer pattern and a nickel plated layer to a heated plate heated to 265 C over which the 98Sn-2Sb solder was spread.
  • thermoelectric apparatuses 8 thermoelectric apparatuses were produced and the lowest temperatures attained were measured under a vacuum of 10 ⁇ 5 Torr. The result is shown in Table 3 below.
  • thermoelectric apparatuses were electrified alternately changing the polarities in the air so as to repeat the cycle of cooling and heating as in the Example 1. The result is shown in Table 4 below.
  • composition of the solder applied in this example was 70Pb-30In of which the melting point was 230°C and solder coating was made by plating to the heat exchange substrates.
  • the other conditions were exactly the same as those of the Example 1.
  • thermoelectric elements The formation of the 70Pb-30In solder layer on thermoelectric elements was made using a boric hydrofluoric acid bath.
  • the electrode pattern on the alumina substrate was formed as follows; First, one and the other surfaces of each of the alumina ceramics heat exchange substrates 4a and 4b (the second heat exchange substrate only is shown here) are roughed, as shown in the FIG. 4(a).
  • an electroless copper plated film 25a having a coating thickness of 1-1.5 ⁇ m was formed on each of the surfaces of the substrates by the electroless copper plating, as shown in FIG. 4(b).
  • a dry film was stuck to each of the surfaces of the substrates and patterned by photolithography to form a resist pattern R1 thereon.
  • a copper plated film 25b having a coating thickness of 10-100 ⁇ m was formed selectively on the electroless copper plated film 5a on each surface of the substrates by electrolytic plating or the like using the electroless copper plated film 25a as an electrode.
  • a nickel plated layer 25c having a coating thickness of 5 ⁇ m was formed by electrolytic plating or the like.
  • a gold plated layer 25d having a coating thickness of 0.5 ⁇ m was formed on the top of the layer 25c by electrolytic plating.
  • a dry film was stuck to the back side of the resulting half-finished product and patterned to form a resist pattern R2 by photolithography.
  • a 70Pb-30In solder plated layer 25e having a coating thickness of 5 ⁇ m was formed by electrolytic plating or the like.
  • the resist patterns R1 and R2 were peeled off to form electrode patterns on the surfaces of the substrates.
  • the electroless copper plated layer 25a that was exposed from the solder plated layer and remained slightly on the surface was removed by light etching.
  • the time for heating in the fluorinate vapor during the assembly was 30 minutes.
  • thermoelectric apparatuses 8 thermoelectric apparatuses were produced and the lowest temperatures attained thereby were measured under a vacuum of 10 ⁇ 5 Torr. The result is shown in Table 5 below.
  • thermoelectric apparatuses were electrified alternately by changing the polarities in the air so as to repeat a cycle of cooling and heating as in the Example 1. The result is shown in Table 6 below.
  • thermoelectric apparatus thus formed was of high reliability because the solder had a coating thickness prescribable with high accuracy, as well as was spread with high flatness. In addition, the heat exchange substrates and the electrode patterns were joined together closely with high pattern accuracy.
  • thermoelectric apparatuses can be provided on various clean packages by soldering without flux since the back surface of the heat exchange substrate includes a gold plated layer.
  • alumina ceramics substrate was used as the insulating substrate in the examples as described above, a beryllia ceramics or aluminum nitride ceramics substrate may be used as well. If a silicon carbide ceramics substrate is used, the heat exchange efficiency greatly increases, no thermal distortion will happen and high reliability is ensured because the heat exchange substrate of silicon carbide ceramics has nine times as high thermal conductivity as the alumina ceramics substrate as well as a small coefficient of thermal expansion.
  • the electrode patterns are not limited to those of the examples, and the coating thickness is changeable properly.
  • the following processes may be added to cover the electrode pattern of the surface with a tin plated layer 25f.
  • the electroless tin plating was made, as shown in FIG. 5(b), the surface of the copper plated layer that was exposed at the side of the surface electrode pattern is covered with the tin plated layer 25f, and the resist pattern R3 was removed.
  • the nickel layer and the gold layer are changeable properly or can be omitted.
  • thermoelectric apparatuses were fabricated by applying 98Sn-2Sb solder by hand to the sliced elements and performing other remaining steps exactly identical to the corresponding steps performed for fabricating example 2. The lowest temperatures attained by the apparatuses were measured. The result is shown in Table 7 below.
  • thermoelectric apparatuses were electrified alternately by changing the polarities in the air so as to repeat a cycle of cooling and heating as in the Examples 1-3.
  • the result is shown in Table 8 below.
  • thermoelectric apparatuses are made with high yield by the method of the present invention.
  • both the first and the second heat exchange substrates were made of an alumina ceramics substrate, and the 5-layered electrode thin film pattern that has a solder plated layer thereon was used on each of the substrates, one of them may be constructed by this method and the other may be constructed by other materials using an other electrode forming method. Alternatively, an apparatus may be constructed using only one heat exchange substrate.
  • insulating substrates such as beryllia ceramics, aluminum nitride ceramics, or silicon carbide ceramics substrates may be used in addition to the alumina ceramics substrate according to the method of the present invention.
  • thermoelectric elements of a thermoelectric apparatus when thermoelectric elements of a thermoelectric apparatus are produced, a solder plated layer is formed on each of the surfaces of the P and N type semiconductors that have Peltier effect and the respective semiconductors are cut to required shapes.
  • the solder layer that has a uniform thickness is obtained very easily, and the coating thickness of solder is prescribed with high accuracy and as a result, a reliable thermoelectric apparatus is formed.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
EP91908865A 1990-05-14 1991-05-14 Method of manufacturing thermoelectric device Withdrawn EP0482215A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2123398A JP2881332B2 (ja) 1990-05-14 1990-05-14 熱電装置の製造方法
JP123398/90 1990-05-14

Publications (2)

Publication Number Publication Date
EP0482215A1 true EP0482215A1 (en) 1992-04-29
EP0482215A4 EP0482215A4 (enrdf_load_stackoverflow) 1994-03-09

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EP91908865A Withdrawn EP0482215A1 (en) 1990-05-14 1991-05-14 Method of manufacturing thermoelectric device

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EP (1) EP0482215A1 (enrdf_load_stackoverflow)
JP (1) JP2881332B2 (enrdf_load_stackoverflow)
WO (1) WO1991018422A1 (enrdf_load_stackoverflow)

Cited By (4)

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EP0969525A1 (en) * 1998-06-29 2000-01-05 Tellurex Corporation thermoelectric module
WO2000019548A1 (de) * 1998-09-30 2000-04-06 Infineon Technologies Ag Verfahren zum herstellen eines thermoelektrischen wandlers
WO2007002342A3 (en) * 2005-06-22 2008-03-27 Nextreme Thermal Solutions Methods of forming thermoelectric devices including electrically insulating matrixes between conductive traces and related structures
CN100444418C (zh) * 2003-11-28 2008-12-17 石田清仁 焊剂和使用它的热电模块以及制备焊剂的方法

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DE10022726C2 (de) * 1999-08-10 2003-07-10 Matsushita Electric Works Ltd Thermoelektrisches Modul mit verbessertem Wärmeübertragungsvermögen und Verfahren zum Herstellen desselben
JP2002043637A (ja) * 2000-07-24 2002-02-08 Aisin Seiki Co Ltd 熱電デバイス
JP2002134796A (ja) * 2000-10-19 2002-05-10 Nhk Spring Co Ltd Ｂｉ−Ｔｅ系半導体素子およびＢｉ−Ｔｅ系熱電モジュール
JP3623178B2 (ja) * 2001-07-02 2005-02-23 京セラ株式会社 熱電変換モジュール一体型パッケージ
RU2234765C1 (ru) * 2003-10-22 2004-08-20 Закрытое акционерное общество "Специализированное конструкторско-технологическое бюро "НОРД" Термоэлектрический модуль
JP2006278997A (ja) * 2005-03-30 2006-10-12 Toyota Central Res & Dev Lab Inc 複合熱電モジュール
JP4826310B2 (ja) * 2006-03-27 2011-11-30 ヤマハ株式会社 熱電モジュール
JP5092168B2 (ja) * 2009-04-13 2012-12-05 株式会社Ｋｅｌｋ ペルチェ素子熱電変換モジュール、ペルチェ素子熱電変換モジュールの製造方法および光通信モジュール
CN113285009A (zh) * 2021-05-26 2021-08-20 杭州大和热磁电子有限公司 一种通过沉积金锡焊料组装的tec及制备方法

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JPS5864075A (ja) * 1981-10-13 1983-04-16 Citizen Watch Co Ltd 熱電堆の製造方法
JPH0337246Y2 (enrdf_load_stackoverflow) * 1986-07-23 1991-08-07
JPS6329966U (enrdf_load_stackoverflow) * 1986-08-08 1988-02-27
JPS63253678A (ja) * 1987-04-10 1988-10-20 Nippon Inter Electronics Corp 熱電変換装置
US4855810A (en) * 1987-06-02 1989-08-08 Gelb Allan S Thermoelectric heat pump
JP2558505B2 (ja) * 1988-06-29 1996-11-27 株式会社小松製作所 多段電子クーラー
JP2729647B2 (ja) * 1989-02-02 1998-03-18 小松エレクトロニクス株式会社 熱電装置の製造方法
JPH02271683A (ja) * 1989-04-13 1990-11-06 Matsushita Electric Ind Co Ltd 熱電素子および熱電素子の製造方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0969525A1 (en) * 1998-06-29 2000-01-05 Tellurex Corporation thermoelectric module
WO2000019548A1 (de) * 1998-09-30 2000-04-06 Infineon Technologies Ag Verfahren zum herstellen eines thermoelektrischen wandlers
US6818470B1 (en) 1998-09-30 2004-11-16 Infineon Technologies Ag Process for producing a thermoelectric converter
CN100444418C (zh) * 2003-11-28 2008-12-17 石田清仁 焊剂和使用它的热电模块以及制备焊剂的方法
WO2007002342A3 (en) * 2005-06-22 2008-03-27 Nextreme Thermal Solutions Methods of forming thermoelectric devices including electrically insulating matrixes between conductive traces and related structures
US7838759B2 (en) 2005-06-22 2010-11-23 Nextreme Thermal Solutions, Inc. Methods of forming thermoelectric devices including electrically insulating matrices between conductive traces

Also Published As

Publication number Publication date
JP2881332B2 (ja) 1999-04-12
WO1991018422A1 (en) 1991-11-28
EP0482215A4 (enrdf_load_stackoverflow) 1994-03-09
JPH0423368A (ja) 1992-01-27

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