EP0471138B1 - Verfahren zur Herstellung eines elektrischen Messwiderstandes - Google Patents

Verfahren zur Herstellung eines elektrischen Messwiderstandes Download PDF

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Publication number
EP0471138B1
EP0471138B1 EP91102300A EP91102300A EP0471138B1 EP 0471138 B1 EP0471138 B1 EP 0471138B1 EP 91102300 A EP91102300 A EP 91102300A EP 91102300 A EP91102300 A EP 91102300A EP 0471138 B1 EP0471138 B1 EP 0471138B1
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EP
European Patent Office
Prior art keywords
layer
rhodium
platinum
range
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP91102300A
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German (de)
English (en)
French (fr)
Other versions
EP0471138A2 (de
EP0471138A3 (en
Inventor
Karlheinz Dr. Wienand
Werner Englert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Heraeus Sensor GmbH
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Heraeus Sensor GmbH
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Publication date
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Publication of EP0471138A3 publication Critical patent/EP0471138A3/de
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
    • H01C7/022—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient mainly consisting of non-metallic substances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/22—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming
    • H01C17/232—Adjusting the temperature coefficient; Adjusting value of resistance by adjusting temperature coefficient of resistance

Definitions

  • the invention relates to a method for producing an electrical measuring resistor with a predetermined temperature coefficient for a resistance thermometer, which has a platinum-containing thin film on a carrier as a resistance layer, the surface of the carrier carrying the resistance layer being made of electrically insulating material.
  • US Pat. No. 4,375,056 discloses a thin-film resistance thermometer with a predetermined temperature coefficient of resistance, in which a thin electrically conductive metal film is applied to an electrically insulating substrate, the thickness of the metal film being in the range from 0.05 and 0.8 ⁇ m lies; in the area of this small layer thickness it is possible to achieve a lower temperature coefficient than with solid material.
  • the ratio of the relative change in the temperature coefficient to the relative change in the layer thickness is greater than 0.01.
  • a platinum film is preferably used as the thin-layer material.
  • a method for producing such a measuring resistor is described in US Pat. No. 4,469,717.
  • a method for producing an electrical measuring resistor for a resistance thermometer which on a carrier made of ceramic material a platinum thin film produced by atomization in a thickness of 0.1 to 10 ⁇ m carries, which has a predetermined temperature coefficient; the average coefficient of thermal expansion of the ceramic substrate differs from that of the thermometer board by less than +/- 30%.
  • Aluminum oxide, beryllium oxide, thorium oxide, magnesium oxide or a magnesium silicate are used as the substrate, the substrate after heat treatment containing less than 20 ppm of metals which are in a form which is reactive with platinum.
  • the desired electrical temperature coefficient of the resistance depending on the application, for example in the range from 1600 to 3860 ppm / K, because when the resistance layer is evaporated due to different vapor pressures of the materials to be applied the desired alloy cannot be set with sufficient certainty, or in the case of cathode sputtering the target material has to be prepared beforehand in the desired alloy;
  • the setting of a desired temperature coefficient of the electrical resistance via the variation of the layer thickness leads to a change in the width or length of the resistance path due to the associated change in the conductor cross section of the resistance path for the purpose of adaptation to the predetermined nominal resistance of the measuring resistor, which results in a change in the Structure of the resistance track results.
  • the object of the invention is to provide a method by which a platinum thin-film resistance layer of a given layer thickness is treated by doping with foreign atoms in such a way that a desired electrical temperature coefficient can be set in the range from 1600 ppm / k to 3860 ppm / k.
  • aluminum oxide is used as the carrier;
  • a support made of a steel substrate which has an electrically insulating intermediate layer on the surface provided for the application of the platinum thin film, which consists of SiO2, BaO, Al2O3 and an inorganic, cobalt-containing dye compound, such as it is described for example in DE-PS 34 26 804.
  • the platinum thin film is applied to the carrier by means of electron beam evaporation.
  • the preparation to be applied by the screen printing process preferably has a rhodium content in the range from 0.1 to 12% by weight, based on the content of platinum and rhodium in the preparation.
  • the measuring resistor produced by the method has a thickness in the range from 0.85 to 1.3 ⁇ m.
  • a platinum thin film 2 is applied over the entire surface of the substrate 1 consisting of aluminum oxide in the electron beam process or sputtering process.
  • a preparation is carried out according to FIG. 1b from a solution of platinum resinate and synthetic resin in organic solvents (12.5% Pt) and from a solution of rhodium sulphate resinate in organic solvents (5% Rh) using the screen printing process; the solutions mentioned are available, for example, under the names RP 10001 / 145B and MR 4511-L from WC Heraeus GmbH, Hanau.
  • the screen printing layer 3 After the screen printing layer 3 has been applied, it is dried at a temperature in the range from 80 to 120 ° C.
  • the rhodium content of layer 3 is in the range from 0.1% to 12%, based on the content of platinum and rhodium.
  • the substrate 1, together with its two layers 2, 3, is subjected to a heat treatment under atmospheric conditions in an oven at a temperature in the range from 1000 to 1400 ° C. until the rhodium in the resistance layer 2 ′ which forms is evenly distributed, with at least a partial exchange of the platinum atoms from layer 3 with platinum atoms of layer 2 also taking place.
  • the resistance layer 2 ' is structured, for example, by sputter etching in the form of a meander.
  • the resistance layer 2 ' is in a meandering shape on the substrate 1, contact fields 4, 5 being provided for external connections at the ends of the resistance strip.
  • the contact fields 4 and 5 are applied by the same method as the resistance layer 2 '.
  • FIG. 3 shows the dependency of the temperature coefficient of the resistance TCR on the rhodium content in the platinum alloy, the rhodium content being stated in% by weight of the platinum alloy. It is thus possible, according to FIG. 3, to precisely adjust the temperature coefficient in the range from 1600 to 3850 ppm / K for measuring resistors based on platinum alloys by varying the rhodium content of the resistance layer; only the rhodium content of the platinum alloy is varied without changing the layer thickness, so that, for example, with a constant layer thickness of 1.1 ⁇ m and a rhodium content of 0.01%, a temperature coefficient of 3850 ppm / K (point A) is achieved; If the proportion of rhodium increases to 0.04% with the same layer thickness, a temperature coefficient of 3830 ppm / K (point B) is achieved.
  • a further increase in the rhodium content to 0.16% reduces the temperature coefficient to 3750 ppm / K (point C). With a further increase in the proportion of rhodium to, for example, 10%, a temperature coefficient of 1600 ppm / K (point D) can be achieved.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Non-Adjustable Resistors (AREA)
  • Thermistors And Varistors (AREA)
  • Conductive Materials (AREA)
EP91102300A 1990-08-17 1991-02-19 Verfahren zur Herstellung eines elektrischen Messwiderstandes Expired - Lifetime EP0471138B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE4026061 1990-08-17
DE4026061A DE4026061C1 (enrdf_load_stackoverflow) 1990-08-17 1990-08-17

Publications (3)

Publication Number Publication Date
EP0471138A2 EP0471138A2 (de) 1992-02-19
EP0471138A3 EP0471138A3 (en) 1992-06-17
EP0471138B1 true EP0471138B1 (de) 1994-12-14

Family

ID=6412421

Family Applications (1)

Application Number Title Priority Date Filing Date
EP91102300A Expired - Lifetime EP0471138B1 (de) 1990-08-17 1991-02-19 Verfahren zur Herstellung eines elektrischen Messwiderstandes

Country Status (3)

Country Link
EP (1) EP0471138B1 (enrdf_load_stackoverflow)
AT (1) ATE115761T1 (enrdf_load_stackoverflow)
DE (2) DE4026061C1 (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19542516C1 (de) * 1995-11-15 1997-04-17 Heraeus Sensor Gmbh Temperatur-Sensor
US5831512A (en) * 1995-10-30 1998-11-03 Heraeus Sensor-Nite Gmbh Resistance thermometer
US6316752B1 (en) 1997-10-03 2001-11-13 Schaffler & Co., Gesellschaft Mbh Heating element with screen-printed Au-Pd resinate layer and Ag-Pd contact areas with solder resistant dams
DE102007046900A1 (de) 2007-09-28 2009-04-30 Heraeus Sensor Technology Gmbh 1200°C-Schichtwiderstand

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4300084C2 (de) * 1993-01-06 1995-07-27 Heraeus Sensor Gmbh Widerstandsthermometer mit einem Meßwiderstand
DE4330447C2 (de) * 1993-09-09 1996-09-19 Heraeus Sensor Gmbh Temperatur-Sensor mit einem Meßwiderstand in einem Metallmantel
JP3175890B2 (ja) * 1993-12-27 2001-06-11 日本碍子株式会社 温度センサ
EP0973020B1 (de) 1998-07-16 2009-06-03 EPIQ Sensor-Nite N.V. Elektrischer Temperatur-Sensor mit Mehrfachschicht
SK284764B6 (sk) * 1999-01-18 2005-11-03 Slovenská Technická Univerzita, Materiálovotechnologická Spôsob tepelného spracovania platinových drôtov na zabezpečenie stabilizácie elektrického odporu
DE19945641A1 (de) * 1999-09-23 2001-04-05 Abb Research Ltd Strombegrenzendes Widerstandselement
CN100359306C (zh) * 2004-04-19 2008-01-02 重庆大学 薄膜电路热流计传感器
CN100359305C (zh) * 2004-04-19 2008-01-02 重庆大学 平面绕线型热流计测头
BRPI0611752B8 (pt) 2005-06-17 2021-05-25 Merz Pharma Gmbh & Co Kgaa dispositivo e processo para produção fermentativa de compostos biologicamente ativos
DE102007023434B4 (de) 2007-05-16 2017-07-06 Innovative Sensor Technology Ist Ag Widerstandsthermometer

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL83232C (enrdf_load_stackoverflow) * 1950-06-20
DE1180215B (de) * 1962-05-18 1964-10-22 Duerrwaechter E Dr Doduco Loesung von Resinaten der Edelmetalle und/oder Unedelmetalle in Chlorkohlenwasserstoffen zur Erzeugung von auf Traegerwerkstoffen ein-gebrannten duennen Edelmetallschichten bzw. Unedelmetalloxydschichten fuer elektrotechnische Zwecke
DE2527739C3 (de) * 1975-06-21 1978-08-31 W.C. Heraeus Gmbh, 6450 Hanau Verfahren zur Herstellung eines elektrischen Meßwiderstandes für ein Widerstandsthermometer
US4469717A (en) * 1980-02-29 1984-09-04 Leeds & Northrup Company Thin film resistance thermometer with a predetermined temperature coefficient of resistance and its method of manufacture
US4375056A (en) * 1980-02-29 1983-02-22 Leeds & Northrup Company Thin film resistance thermometer device with a predetermined temperature coefficent of resistance and its method of manufacture
DE3426804C2 (de) * 1984-07-10 1987-01-22 W.C. Heraeus Gmbh, 6450 Hanau Substrat für gedruckte Schaltungen
US4766411A (en) * 1986-05-29 1988-08-23 U.S. Philips Corporation Use of compositionally modulated multilayer thin films as resistive material

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5831512A (en) * 1995-10-30 1998-11-03 Heraeus Sensor-Nite Gmbh Resistance thermometer
DE19542516C1 (de) * 1995-11-15 1997-04-17 Heraeus Sensor Gmbh Temperatur-Sensor
US5959524A (en) * 1995-11-15 1999-09-28 Heraeus Electro-Nite International N.V. Temperature sensor
US6316752B1 (en) 1997-10-03 2001-11-13 Schaffler & Co., Gesellschaft Mbh Heating element with screen-printed Au-Pd resinate layer and Ag-Pd contact areas with solder resistant dams
DE102007046900A1 (de) 2007-09-28 2009-04-30 Heraeus Sensor Technology Gmbh 1200°C-Schichtwiderstand
DE102007046900B4 (de) * 2007-09-28 2011-07-21 Heraeus Sensor Technology GmbH, 63450 Hochtemperatursensor und ein Verfahren zu dessen Herstellung
DE102007046900C5 (de) 2007-09-28 2018-07-26 Heraeus Sensor Technology Gmbh Hochtemperatursensor und ein Verfahren zu dessen Herstellung

Also Published As

Publication number Publication date
DE59103868D1 (de) 1995-01-26
EP0471138A2 (de) 1992-02-19
EP0471138A3 (en) 1992-06-17
ATE115761T1 (de) 1994-12-15
DE4026061C1 (enrdf_load_stackoverflow) 1992-02-13

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