EP0304068B1 - Entfernen von Resistschichten - Google Patents

Entfernen von Resistschichten Download PDF

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Publication number
EP0304068B1
EP0304068B1 EP88113456A EP88113456A EP0304068B1 EP 0304068 B1 EP0304068 B1 EP 0304068B1 EP 88113456 A EP88113456 A EP 88113456A EP 88113456 A EP88113456 A EP 88113456A EP 0304068 B1 EP0304068 B1 EP 0304068B1
Authority
EP
European Patent Office
Prior art keywords
resist layer
region
implanted
substrate
etching process
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP88113456A
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English (en)
French (fr)
Other versions
EP0304068A3 (en
EP0304068A2 (de
Inventor
Shuzo C/O Fujitsu Limited Fujimura
Junichi C/O Fujitsu Limited Konno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of EP0304068A2 publication Critical patent/EP0304068A2/de
Publication of EP0304068A3 publication Critical patent/EP0304068A3/en
Application granted granted Critical
Publication of EP0304068B1 publication Critical patent/EP0304068B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only

Definitions

  • the present invention relates to a method of fabricating a semiconductor device and is particularly concerned with the removal of a resist layer which has a high dose of ions implanted therein, formed on a substrate in the course of fabrication of a semiconductor device.
  • a resist layer made of resin such as novolak resin is used as a mask for masking designated portions of the substrate which are not to be ion-implanted, and the resist layer must be removed after the ion implantation process is finished, for proceeding to a next semiconductor device fabrication step.
  • an oxygen plasma etching method performed with no sputtering action, a downstream ashing method carried out in a reactive gas of hydrogen, or a wet stripping method have been used.
  • the resist layer is carbonized, it is difficult to remove by the methods mentioned above without damaging the substrate under the resist layer. That is, if a reactive etching method such as an oxygen plasma etching method is used for removing the resist layer with a strong sputtering action, for example, by using a parallel plate plasma etching appratus, the resist layer can be ashed even though the resist layer has been carbonized.
  • a reactive etching method such as an oxygen plasma etching method
  • the resist layer can be ashed even though the resist layer has been carbonized.
  • a designated portion such as a gate oxide layer of an MOS transistor, previously fabricated in a surface region of the substrate under the resist layer, can be broken or damaged because of stored charge produced on the surface of the substrate during the plasma sputtering. If this occurs, there is no way to rectify the damage.
  • a method of removing a resist layer formed on a substrate, the resist layer including an ion-implanted region, extending into the resist layer from an upper surface of the resist layer, into which a high dose of ions has been implanted and which has suffered carbonisation comprising:- removing a first region of the resist layer, including the said ion-implanted region which has suffered carbonisation, by a first plasma etching process, using hydrogen as a reactive gas, the hydrogen reacting with the dopant implanted in the resist layer, producing volatile hydrogenated compounds, leaving a second region of the resist layer in place, which second region has not suffered carbonization; and removing the second region by a second etching process performed without using a plasma having charged particles.
  • An embodiment of the present invention can provide for the removal of a resist layer, into which a high dose of ions has been implanted, formed on a substrate being processed to form a semiconductor device, with simple removal processes.
  • An embodiment of the present invention can provide for removal of the resist layer without damage to the substrate.
  • Use of an embodiment of the present invention can lead to a decrease in the cost of a semiconductor device fabricated using processes involving implanting high doses of ions.
  • Use of an embodiment of the present invention can provide increased reliability of semiconductor devices fabricated using processes involving implanting high doses of ions.
  • Use of an embodiment of the present invention can provide for increased yield rate of products using semiconductor devices fabricated using processes involving implanting high doses of ions.
  • a resist layer is removed in the following two steps, the resist layer being divided into two regions with an upper region including a carbonized region and a lower region attached to a substrate: a step for removing the upper region by a plasma etching method carried out with a mixing gas of nitrogen and an active gas of hydrogen and a step for removing the lower region by using a previously proposed method such as a downstream sputtering method or wet stripping method.
  • inert gases may be used as mixing gases.
  • FIG. 1(a) to 1(d) the cross-sectional views of a semi-processed semiconductor device illustrate successive steps in a method embodying the present invention.
  • photoresist for example, HPR 204; FUJI-HUNT
  • a substrate 1 by a spinner so as to form a resist layer 2 of 2 ⁇ m thickness
  • the resist layer is patterned by photolithography for forming an opening 6 for implantation of a high dose of ions into a silicon substrate 5.
  • the substrate 1 consists of a silicon substrate 5 and oxide layers 3 formed in surface regions of the silicon substrate 5.
  • Fig. 1(b) high doses, 1 x 1016 cm ⁇ 2 for instance, of phosphorus ions are implanted into the silicon substrate 5 at an energy of 70 keV (kilo electron volts), to form phosphorus implanted region 4 in the silicon substrate 5 at the opening 6 in the resist layer 2. Only one opening 6 is shown in Figs. 1(a) to 1(d) and only the implanted region 4 is indicated in Figs. 1(b) to 1(d), at the opening 6. Of course, in practice, there may be a plurality of openings and implanted regions.
  • the thickness of the carbonized region 2a is from 0.2 ⁇ m to 0.3 ⁇ m. This carbonized region 2a is responsible for problems as mentioned above.
  • Fig. 2 is a schematic illustration of the resist ashing apparatus 50.
  • the resist ashing apparatus 50 consists of a cathode-coupled parallel plate plasma ashing chamber 11, which will be called simply a "plasma ashing chamber 11" hereinafter, for removing the carbonized region 2a, a downstream ashing chamber 21 for removing the uncarbonized region 2b, and load locks or blocks 30, 31 and 32.
  • the load lock 30 is for introducing a wafer to the plasma ashing chamber 11 from outside the resist ashing apparatus 50, the load lock 32 is for transferring the wafer from the plasma ashing chamber 11 to the downstream ashing chamber 21, and the load lock 31 is for outputting the wafer from the downstream ashing chamber 21 to the outside.
  • a wafer is a member such as a silicon wafer divided into a plurality of semi-processed devices on each of which a resist layer is formed.
  • plasma is confined between a power electrode 15 and a table 14 on which a wafer 100 is placed; wherein, on the wafer 100, a plurality of semi-processed devices as seen in Fig. 1(b) are provided.
  • the temperature of the wafer 100 can be controlled by a heater and a cooler, not shown in Fig. 2, attached to the table 14.
  • RF (radio frequency) power at 13.56 MHz is delivered to the plasma from a power source 16.
  • the temperature of the wafer 100 should be maintained lower than a softening point (about 120°C) of the resist layer 2.
  • the uncarbonized region 2b would be softened during the etching of the carbonized region 2a, so that the carbonized region 2a could suffer cracking and be torn or divided into many pieces, with some pieces sunk into the softened uncarbonized region 2b.
  • residues obtained from plasma etching of the carbonized region 2a would be left at the bottom of the uncarbonized region 2b adhering to the upper surface of the substrate 1, unless the residues are etched off by the plasma. If plasma etching were applied to the uncarbonized region 2b, the same problems as have previously occurred would arise.
  • a mixed gas composed of 97% nitrogen and 3% hydrogen in volume is used in the plasma ashing chamber 11 as a reactive gas, with, for instance, a pressure of 66.7 Pa (0.5 Torr).
  • the mixed gas is introduced into the plasma ashing chamber 11 through an inlet 12 and exhausted from the plasma ashing chamber 11 through an outlet 13, using an evacuating system Vac. 1 not shown in Fig. 2.
  • the lower region 2c is removed in the next step.
  • the wafer 100 on the table 14 in the plasma ashing chamber 11 is transferred to a table 24 in the downstream ashing chamber 21 through the load block 32 without breaking the vacuum in the apparatus, and the lower region 2c is removed in the downstream ashing chamber 21, applying a downstream ashing method.
  • a microwave plasma is generated by a magnetron source 25 oscillating RF at 2.45 GHz and confined in a space between a window 26 and a shower head 27.
  • a mixed gas composed of 97% (in volume) oxygen and 3% tetrafluoromethane is introduced through an inlet 22 and exhausted to an evacuating system Vac. 2, not shown in Fig. 2, through an outlet 23. Consequently, the wafer 100 is etched in a space between the shower head 27 and the table 24 filled with oxygen and other gas species being neutral in atomic state.
  • This kind of etching is called downstream ashing, and by this etching the lower region 2c is completely removed as shown in Fig. 1(d).
  • the power required to perform the downstream ashing is lower, compared to that of the plasma ashing performed in the chamber 11, so that problems do not arise in respect of the substrate 1 as they have previously done.
  • etching the lower region 2c can be used for etching the lower region 2c, for example a wet stripping method.
  • substrate 1 wafer 100
  • breaking the vacuum after the plasma etching of the upper region 2a.
  • a particle counter for counting the number of the residues, such as phosphorus oxides, heavy metals and carbon compounds, remaining on the surface of the subsrate 1 is employed. Counting only residues having diameters larger than 100 ⁇ m, the number of residues present after use of an embodiment of this invention is 300 to 350 per 10.16-cm (4-inch) wafer for instance. This number is very small, compared with residue numbers previously achieved. That is, when an oxygen plasma etching method is used for removing the resist layer 2, the residue number is about 8000 per 10.16-cm (4-inch) wafer. It is clear that the present invention can provide for remarkable improvement in relation to the removal of an ion-implanted resist layer.
  • an ashing process in accordance with an embodiment of the present invention can generate a few lattice defects
  • the lattice defects can be eliminated by annealing the substrate 1 at a temperature higher than 400°C.
  • An embodiment of the present invention provides a method for removing a resist layer, in which a high dose of ions has been implanted, by etching in two steps:- in a first step, a carbonized region produced in the resist layer due to the high dose ion implantation is etched by applying plasma using hydrogen as a reactive gas at a temperature lower than a softening point of the resist layer; and in the second step, a lower region of the resist layer, left after the etching of the first step, is etched by a method such as a downstream ashing method or a wet stripping method.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Claims (7)

  1. Verfahren zur Entfernung einer auf einem Substrat (1) gebildeten Resistschicht (2), wobei die Resistschicht (2) eine ionenimplantierte Zone (2a) enthält, welche sich in die Resistschicht von einer Oberseitenfläche der Resistschicht (2) erstreckt, in die eine hohe Ionendosis implantiert wurde, und die eine Carbonisierung erfahren hat, welches Verfahren umfaßt:
       Entfernen einer ersten Zone der Resistschicht (2), welche die genannte ionenimplantierte Zone (2a) enthält, die eine Carbonisierung erfahren hat, durch ein erstes Plasmaätzverfahren unter Verwendung von Wasserstoff als reaktives Gas, wobei der Wasserstoff mit dem in der Resistschicht implantierten Dotierungsstoff reagiert, flüchtige hydrierte Verbindungen erzeugend, und eine zweite Zone (2c) der Resistschicht (2) an ihrer Stelle belassen wird, welche zweite Zone (2c) keine Carbonisierung erfahren hat; und
       Entfernen der zweiten Zone (2c) durch ein zweites Ätzverfahren, welches ohne Verwendung eines Plasmas mit geladenen Teilchen durchgeführt wird.
  2. Verfahren nach Anspruch 1, bei welchem das zweite Ätzverfahren ein stromabwärtiges Ätzverfahren ist.
  3. Verfahren nach Anspruch 1, bei welchem das zweite Ätzverfahren ein Naßabstreifverfahren ist.
  4. Verfahren nach Anspruch 1, 2 oder 3, bei welchem das erste Ätzverfahren bei einer Temperatur unter dem Erweichungspunkt der Resistschicht (2) durchgeführt wird.
  5. Verfahren nach Anspruch 1, 2, 3 oder 4, bei welchem die Entfernung der ersten Zone unter Verwendung eines gemischten Gases durchgeführt wird, das den genannten Wasserstoff und ein inertes Gas, beispielsweise Stickstoff, enthält.
  6. Verfahren nach einem der vorhergehenden Ansprüche, ferner umfassend das Ausheilen des Substrats (1) bei einer Temperatur von mehr als 400°C nach der Entfernung der Resistschicht (2).
  7. Verfahren nach Anspruch 5, bei welchem das erste Ätzverfahren in einer mit dem gemischten Gas gefüllten Parallelplatten-Plasmaätzkammer durchgeführt wird.
EP88113456A 1987-08-19 1988-08-18 Entfernen von Resistschichten Expired - Lifetime EP0304068B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP62203986A JPH0770524B2 (ja) 1987-08-19 1987-08-19 半導体装置の製造方法
JP203986/87 1987-08-19

Publications (3)

Publication Number Publication Date
EP0304068A2 EP0304068A2 (de) 1989-02-22
EP0304068A3 EP0304068A3 (en) 1989-07-26
EP0304068B1 true EP0304068B1 (de) 1992-12-30

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Family Applications (1)

Application Number Title Priority Date Filing Date
EP88113456A Expired - Lifetime EP0304068B1 (de) 1987-08-19 1988-08-18 Entfernen von Resistschichten

Country Status (5)

Country Link
US (1) US4861424A (de)
EP (1) EP0304068B1 (de)
JP (1) JPH0770524B2 (de)
KR (1) KR920003313B1 (de)
DE (1) DE3877085T2 (de)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8641862B2 (en) 2004-12-13 2014-02-04 Novellus Systems, Inc. High dose implantation strip (HDIS) in H2 base chemistry
US8716143B1 (en) 2005-05-12 2014-05-06 Novellus Systems, Inc. Plasma based photoresist removal system for cleaning post ash residue
US8721797B2 (en) 2009-12-11 2014-05-13 Novellus Systems, Inc. Enhanced passivation process to protect silicon prior to high dose implant strip
US9373497B2 (en) 2007-04-04 2016-06-21 Novellus Systems, Inc. Methods for stripping photoresist and/or cleaning metal regions
US9514954B2 (en) 2014-06-10 2016-12-06 Lam Research Corporation Peroxide-vapor treatment for enhancing photoresist-strip performance and modifying organic films
US9564344B2 (en) 2009-12-11 2017-02-07 Novellus Systems, Inc. Ultra low silicon loss high dose implant strip

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JP2541851B2 (ja) * 1989-03-10 1996-10-09 富士通株式会社 有機物の剥離方法
JP3034259B2 (ja) * 1989-03-31 2000-04-17 株式会社東芝 有機化合物膜の除去方法
JPH03177021A (ja) * 1989-12-05 1991-08-01 Fujitsu Ltd 半導体装置の製造方法
JPH04352157A (ja) * 1991-05-30 1992-12-07 Toyota Autom Loom Works Ltd レジスト除去方法
JP3391410B2 (ja) * 1993-09-17 2003-03-31 富士通株式会社 レジストマスクの除去方法
JPH07153769A (ja) * 1993-11-30 1995-06-16 Hitachi Ltd 半導体集積回路装置の製造方法および製造装置
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US5651860A (en) * 1996-03-06 1997-07-29 Micron Technology, Inc. Ion-implanted resist removal method
US5908319A (en) * 1996-04-24 1999-06-01 Ulvac Technologies, Inc. Cleaning and stripping of photoresist from surfaces of semiconductor wafers
US6010949A (en) * 1996-10-21 2000-01-04 Micron Technology, Inc. Method for removing silicon nitride in the fabrication of semiconductor devices
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US5968374A (en) * 1997-03-20 1999-10-19 Lam Research Corporation Methods and apparatus for controlled partial ashing in a variable-gap plasma processing chamber
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EP0940846A1 (de) 1998-03-06 1999-09-08 Interuniversitair Micro-Elektronica Centrum Vzw Verfahren zum Entschichten von implantierten Photolacken
US6242165B1 (en) 1998-08-28 2001-06-05 Micron Technology, Inc. Supercritical compositions for removal of organic material and methods of using same
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JP2002124652A (ja) * 2000-10-16 2002-04-26 Seiko Epson Corp 半導体基板の製造方法、半導体基板、電気光学装置並びに電子機器
US6777173B2 (en) * 2002-08-30 2004-08-17 Lam Research Corporation H2O vapor as a processing gas for crust, resist, and residue removal for post ion implant resist strip
CN1682353A (zh) * 2002-09-18 2005-10-12 马特森技术公司 去除材料的系统和方法
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US7799685B2 (en) * 2003-10-13 2010-09-21 Mattson Technology, Inc. System and method for removal of photoresist in transistor fabrication for integrated circuit manufacturing
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US20070054492A1 (en) * 2004-06-17 2007-03-08 Elliott David J Photoreactive removal of ion implanted resist
US20050279453A1 (en) * 2004-06-17 2005-12-22 Uvtech Systems, Inc. System and methods for surface cleaning
US20110061679A1 (en) * 2004-06-17 2011-03-17 Uvtech Systems, Inc. Photoreactive Removal of Ion Implanted Resist
US20070186953A1 (en) * 2004-07-12 2007-08-16 Savas Stephen E Systems and Methods for Photoresist Strip and Residue Treatment in Integrated Circuit Manufacturing
US7947605B2 (en) * 2006-04-19 2011-05-24 Mattson Technology, Inc. Post ion implant photoresist strip using a pattern fill and method
DE102006062035B4 (de) * 2006-12-29 2013-02-07 Advanced Micro Devices, Inc. Verfahren zum Entfernen von Lackmaterial nach einer Implantation mit hoher Dosis in einem Halbleiterbauelement
CN101458463B (zh) * 2007-12-13 2011-08-17 中芯国际集成电路制造(上海)有限公司 灰化的方法
US7915115B2 (en) * 2008-06-03 2011-03-29 International Business Machines Corporation Method for forming dual high-k metal gate using photoresist mask and structures thereof
US9613825B2 (en) * 2011-08-26 2017-04-04 Novellus Systems, Inc. Photoresist strip processes for improved device integrity

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Cited By (6)

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Publication number Priority date Publication date Assignee Title
US8641862B2 (en) 2004-12-13 2014-02-04 Novellus Systems, Inc. High dose implantation strip (HDIS) in H2 base chemistry
US8716143B1 (en) 2005-05-12 2014-05-06 Novellus Systems, Inc. Plasma based photoresist removal system for cleaning post ash residue
US9373497B2 (en) 2007-04-04 2016-06-21 Novellus Systems, Inc. Methods for stripping photoresist and/or cleaning metal regions
US8721797B2 (en) 2009-12-11 2014-05-13 Novellus Systems, Inc. Enhanced passivation process to protect silicon prior to high dose implant strip
US9564344B2 (en) 2009-12-11 2017-02-07 Novellus Systems, Inc. Ultra low silicon loss high dose implant strip
US9514954B2 (en) 2014-06-10 2016-12-06 Lam Research Corporation Peroxide-vapor treatment for enhancing photoresist-strip performance and modifying organic films

Also Published As

Publication number Publication date
JPS6448418A (en) 1989-02-22
KR920003313B1 (ko) 1992-04-27
KR890004408A (ko) 1989-04-21
DE3877085T2 (de) 1993-04-29
JPH0770524B2 (ja) 1995-07-31
US4861424A (en) 1989-08-29
EP0304068A3 (en) 1989-07-26
DE3877085D1 (de) 1993-02-11
EP0304068A2 (de) 1989-02-22

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