EP0274407B1 - Dispositifs et systèmes basés sur des matériaux supraconducteurs - Google Patents
Dispositifs et systèmes basés sur des matériaux supraconducteurs Download PDFInfo
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- EP0274407B1 EP0274407B1 EP88300018A EP88300018A EP0274407B1 EP 0274407 B1 EP0274407 B1 EP 0274407B1 EP 88300018 A EP88300018 A EP 88300018A EP 88300018 A EP88300018 A EP 88300018A EP 0274407 B1 EP0274407 B1 EP 0274407B1
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- 238000013461 design Methods 0.000 description 2
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- 238000007580 dry-mixing Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910001940 europium oxide Inorganic materials 0.000 description 1
- AEBZCFFCDTZXHP-UHFFFAOYSA-N europium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Eu+3].[Eu+3] AEBZCFFCDTZXHP-UHFFFAOYSA-N 0.000 description 1
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- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 1
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- 238000001755 magnetron sputter deposition Methods 0.000 description 1
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- MPARYNQUYZOBJM-UHFFFAOYSA-N oxo(oxolutetiooxy)lutetium Chemical compound O=[Lu]O[Lu]=O MPARYNQUYZOBJM-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- MMKQUGHLEMYQSG-UHFFFAOYSA-N oxygen(2-);praseodymium(3+) Chemical compound [O-2].[O-2].[O-2].[Pr+3].[Pr+3] MMKQUGHLEMYQSG-UHFFFAOYSA-N 0.000 description 1
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- 229910052705 radium Inorganic materials 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/45—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on copper oxide or solid solutions thereof with other oxides
- C04B35/4504—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on copper oxide or solid solutions thereof with other oxides containing rare earth oxides
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/45—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on copper oxide or solid solutions thereof with other oxides
- C04B35/4504—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on copper oxide or solid solutions thereof with other oxides containing rare earth oxides
- C04B35/4508—Type 1-2-3
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/45—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on copper oxide or solid solutions thereof with other oxides
- C04B35/4521—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on copper oxide or solid solutions thereof with other oxides containing bismuth oxide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
- H01L23/49888—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials the conductive materials containing superconducting material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/10—Junction-based devices
- H10N60/12—Josephson-effect devices
- H10N60/124—Josephson-effect devices comprising high-Tc ceramic materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/80—Constructional details
- H10N60/85—Superconducting active materials
- H10N60/855—Ceramic superconductors
- H10N60/857—Ceramic superconductors comprising copper oxide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/825—Apparatus per se, device per se, or process of making or operating same
- Y10S505/879—Magnet or electromagnet
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/825—Apparatus per se, device per se, or process of making or operating same
- Y10S505/884—Conductor
Definitions
- This invention relates to superconductive material and apparatus and systems utilizing such material.
- Characteristics of preferred compositions herein give rise to apparatus design advantages. Such characteristics include useful values of critical temperature and critical magnetic field Certain of the compositions are free of characteristics which have been associated with radiation damage in prior materials.
- identification is of a perovskite or near-perovskite (referred to collectively as “perovskite”) phase of specific composition. All included materials of the "perovskite” class are primarily pure quaternary or partially substituted quaternary copper oxides. Nominal compositions -- all single phase "perovskite” -- may be representated by the general formula M 3-m M' m Cu 3 O 9- ⁇ , although specific materials of the general compositions of the reported multiphase material (Phys.Rev.Lett., Vol.
- M 2 M 1 Cu 3 O 9- ⁇ are of the more somewhat specific nominal composition M 2 M 1 Cu 3 O 9- ⁇ .
- the latter materials are based on a nominal 2:1 atomic ratio of divalent:trivalent cation inclusion in the M site.
- a class of materials of the invention are those in which M is predominantly barium and M ⁇ is predominantly yttrium.
- a more general class of materials of the invention are those of the first formula above in which M occupancy while averaging divalency, may contain an additional divalent ion such as strontium or calcium or in which the average valent state may be the consequence of occupancy by ions of differing valence values.
- compositions described herein lack use of 1:1 occupancy by trivalent and monovalent (rare earth and alkali metal) ions.
- a class of materials of the invention depend upon predominant occupancy of M ⁇ by yttrium, although improved T c values have been obtained by total substitution of europium.
- Other permitted M ⁇ ions are lutetium, lanthanum and scandium. With the exception of strontium and scandium and, of course, where valence averging is intended, superconducting compositions of the invention have been based on total as well as partial M and/or M ⁇ occupancy.
- compositions herein with T c values sufficiently high to permit liquid nitrogen refrigerant is compatible with already-suggested increasing semiconductor mobility by liquid nitrogen cooling.
- FIG. 1 is a diagrammatic representation of the ideal cubic perovskite structure. As described further on, it serves as a basis for structures in this invention which may entail distortions to lower symmetry and/or deviations from nominal stoichiometry.
- FIGS. 2 and 3 on coordinates of resistivity and temperature, plot characteristics of materials made in accordance with the Examples on different coordinate scales.
- the curve form is useful in identification of the various values of T c as the term is used in the art.
- FIG. 4 on coordinates of magnetization and temperature, shows development of (superconductive) diamagnetic response, again, as plotted for typical materials produced in accordance with the Examples.
- FIG. 5 depicts a cable design incorporating a superconducting element of an inventive composition.
- FIG. 6 depicts a superconducting solenoid.
- FIG. 7 represents a superconducting torus suitable for use for fusion reaction confinement.
- FIG. 8 shows a Josephson junction device illustrative of devices dependent upon superconducting tunneling.
- FIG. 9 shows the current-voltage characteristics of the device of FIG. 8.
- FIG. 9 on the coordinates of resistance and temperature, depicts a characteristic curve of the nature of FIGS. 2 and 3, but is included herein as illustrating an inventive composition with a deviation from the normal conductor resistance/temperature relationship to yield what may be regarded as an unusually high supercnducting onset temperature.
- FIG. 10 depicts a semiconducting strip line suitable for use as interconnection linkage, e.g., in a semiconductor computer.
- the origin of the invention is in terms of identification of essentially single phase material. Identification and the ability to reliably produce the single phase materal here identified as “perovskite”, naturally lead to total as well as partial substitutions, to establishment of criteria determinative of parameters such as cation concentrations, permit oxygen content (always deficient in terms of the prototypical composition) as well as average valence state of the copper ion (crucial in terms of the mechanism which may be regarded as responsible for supplying conductive electrons). From a practical standpoint, the "perovskite" structure relative to earlier structures permits expeditious sintering, generally at lower temperature.
- the role of the perovskite is crucial so long as the superconducting element is not a single crystal (eg., in the ceramic form of many of the reported experiments herein).
- An important attribute has to do with facilitation of larger crystallites and as possibly aided by improved intergrain contact with resulting enhanced current-carrying capability.
- Materials of the invention are essentially single phase.
- the materials herein are single phase preferably to at least 95 mole percent as determined by powder x-ray diffraction. The particular value, 95 percent, is chosen as corresponding with the expected measurement precision of ordinary apparatus - procedures. While such "truly" single phase material is to be preferred and will doubtless be the ambition for practical usage, compositional as well as preparatory considerations (e.g., film formation) leads to the more general requirement that materials be single phase to 75 mole percent. Even somewhat larger amounts of second phase material are permissible for uses in which maximum current density is not required.
- perovskite the single phase so identified is “perovskite".
- the quoted term as used herein is meant to include not only prototype, truly cubic material, but very significantly distortions therefrom.
- other variation from the nominal perovskite is in terms of stoichiometry.
- Analyzed materials of the invention show oxygen occupancy of 6.5-7.1 significantly below the nominal composition of 9 for a non-deficient perovskite. This translates into the ⁇ values of 1.9 to 2.5 in terms of the formula containing O 9- ⁇ . A somewhat wider range is still expected to superconduct.
- a preferred category of materials herein show a specific form of distortion of such preferred materials (materials having the higher T c values) while variables share in common a magnitude such tht observation of the distortion is observed on ordinary instrumentation as used in x-ray powder diffraction.
- This crystallographic cell is a "supercell” of the cubin ABO 3 and is of three times the volume due to subtle ordering effects.
- Other compositions may show different "supercells” or exhibit “supercells” whose diffraction signatures are too weak to be observed by conventional x-ray powder diffraction techniques.
- Such supercells are well known in perovskite structure type materials. Isolation of single crystalline materials has permitted verification of the above.
- compositions herein in which M and M ⁇ ions differ in size sufficiently are truly ordered for compositions in which inclusion of M/M ⁇ ions nominally follows the ratio 2/1, the repeating unit includes three primitive cells. While preferred compositions generally meet the ion size requirements for ordering, other superconducting compositions of the invention do not. So, for example, compositions of Examples 6 to 11 are based on M/M ⁇ radii which do not inherently result in ordering. Considerations such as material cost and ease of processing may lead to selection of such compositions which, in these terms, may be "disordered".
- compositions of the invention may also utilize yttrium although total or partial substitution of other elements has been useful (see Examples herein).
- Europium in particular, yields increased values of T c .
- Total substitution by luteium as well as lanthanum has also been employed as has (substantial) partial substitution by scandium.
- partial substitutions e.g., at the 25 mole percent level, do not substantially affect T c in many instances.
- the significance of processing temperature is seen repeatedly.
- the difference is ascribed to the anneal temperature.
- annealing in oxygen at 1 atmosphere was a temperature of 950°.
- Example 11 the anneal conditions were unchanged but for a change in the anneal temperature of 700° C from 900° C.
- the present invention is importantly premised on identification of a reproducible preparation of single phase material. It has been indicated that the 2:1 A site occupancy may give rise to a unit cell containing more than a single ABO 3 unit. Partial substitutions, e.g., at the 25 mole percent level as reported in the Examples, give no x-ray indication of deviation -- such materials continue to be identified as single phase. It is observed, however, that partial substitution, like total substitution, gives rise to some change in the degree and type of distortion from cubic perovskite. Again, it has generally been observed that reduction in distortion corresponds with some lessening in T c .
- Material specification in accordance with the invention depends upon the nature of the intended use. For power transmission, or any other current-carrying application, it is required that there be a continuous superconducting path. For detector and other device use (e.g., Josephson junction devices) in which tunneling might be permitted or even required, it is necessary only that there be sufficient superconducting phase to satisfy such use.
- detector and other device use e.g., Josephson junction devices
- Starting materials are mixtures of metallic oxides, hydroxides, carbonates, hydrates, oxalates or other reactive precursors in the appropriate ratio to obtain the desired final composition.
- Starting material may be produced by wet or dry mixing, by co-precipitation of materials from solution, or by any other method which results in intimate mixture of reactive particles.
- Mixtures of starting materials can be fired in air, oxygen or other non-reducing ambient at temperatures sufficient to facilitate chemical reaction between constituents and to begin formation of the desired phase. Firing temperatures as notes are composition-dependent so that choice of temperature may radically affect T c for certain compositions. Typically, temperatures are between approximately 700 and 950°C for times of between a few hours and several days until the desired phase is either fully or partially produced.
- the "calcined" material is then formed into the ceramic body of desired shape by standard ceramic processing techniques such as hot or cold pressing, extrusion, slipcasting, or other such techniques appropriate to the geometry of the desired (green body) object.
- the material in final form is fired at a temperature sufficiently high to complete chemical reaction of components ("reactive sintering") if not accomplished in step (2) and for densification.
- This " sintering" is conducted so as to reduce voids to the point where the density of the ceramic body is sufficient to allow obtaining favorable electrical and mechanical properties.
- the material is fired in an ambient environment with greater partial pressure of O 2 than that of air (20,27 kPa (.2 atm.)).
- material fired in air may have acceptable superconducting properties. (Air is not the desired processing environment since the use of too high a temperature may result in undue oxygen loss and consequently degradation of properties.)
- the technique used to identify the nature of the final material is set forth: a portion of the finally annealed disc is pulverized, and a powder X-ray diffraction pattern is made.
- the particular technique used was powder diffractometry, although other techniques such as Debye-Scherrer or Guinier photography may also be employed. (B. D. Cullity, Elements of X-Ray Diffraction, Addison-Wesley Publ. Co., Inc., Reading, Mass. (1978)).
- Examples 1, 2 and 3 differ one from the other solely in terms of the atmosphere used during anneal.
- the atmosphere was oxygen at 1 atmosphere of pressure, in Example 2, it was air also at 1 atmosphere, in Example 3, the anneal atmosphrere was oxygen at 3 atmospheres of pressure.
- Example 8 was air quenched from a 600° C oxygen anneal.
- T c transisiton temperatures
- T c midpoint the resistive midpoint, i.e., the resistance value which is 1/2 that of the onset and absolute zero values
- T c M the most stringent measure (as reported herein) involving the expulsion of magnetic flux.
- FIG. 1 presents the atomic arrangement of the unit cell of materials of the perovskite structure type.
- the structure has been described in detail in standard references.
- the symbols of the type marked by 71 are representative of the positions of the A site atoms in the prototype material; the corners of the octahedra as marked by 72 are representative of the oxygen atoms; and symbols of the type marked 73 are representative of the copper atoms.
- the unit cell represented in the Figure has cubic symmetry, that is, that the elementary repet distances in the directions denoted by arrows marked 74, 75 and 76 are equal in length to each other. There are many distortions and type of nonstoichiometry in perovskites which are detailed in standard references. Most of the compositions herein are tetragonal, but Example 2 is cubic or nearly so.
- FIG. 2 is illustratie of the resistive technique for measuring superconductivity.
- the resistivity measurement ⁇ is made by a standard 4-point probe.
- the abscissa units are temperature in Kelvin, K. It is seen that curve 1 follows a constant slope upon decrease of temperature to about 110 K, below which the resistivity decreases more quickly, followed by a more abrupt break 2 indicative of onset of superconductivity.
- Point 3 is the "mid-point resistive" value, in this instance occurring at 93 K.
- Point 4 represents the temperature at which all resistance to the flow of electricity occurs and is 91.5 K in this sample.
- FIG. 3 is a blowup of FIG. 2 showing the same features in more detail.
- FIG. 4 in units of magnetization on the ordinate in terms of 10 -2 emu versus temperature in Kelvin on the abscissa, are illustrative of the results of magnetization measurements.
- the particular sample is that of Example 1.
- the procedure followed for this Example and for all others reported involved first cooling the sample to 4 K, a magnetic field was then applied and the temperature increased while measuring the magnetization used in a commercial SQUID magnetometer.
- the field applied was 1472 A / m (18.5 Oe) resulting in a magnetization of -3.10 -2 emu at 10 K and sharply turned up to become positive above 90 K.
- FIG. 5 the structure shown is described in detail in G. Bogner, "Large Scale Applications of Superconductivity", in Superconductor Application: SQUIDS and Machines, B. B. Schwartz and S. Foner, eds. (Plenum Press, New York, 1977).
- structure depicted consists of an outer sheathing 31, thermal insulation layers 32a and 32b, evacuated annular regions 33a and 33b, spacers 34, nitrogen-filled annular region 35, heat shield 36, and coolant regions 37a and 37 b (it is a feature of the inventive structure that coolant may consist of liquid nitrogen in contradistinction with the liquid helium or hydrogen required of earlier structures).
- Element 38 is a superconductor material in accordance with the invention.
- FIG. 6 shows an annular cryostat 41 filled with liquid nitrogen and containing turns 42 of a material herein. Terminal leads 43 and 44 are shown emerging from the coil.
- Magnetic test structure of FIG. 7 is described in R. A. Hein and D. U. Gubser, "Applications in the United States", in Superconductor Materials Science: Metallurgy, Fabrication, and Applications, S. Foner and B. B. Schwartz, eds., (Plenum Press, New York, 1981).
- the superconducting element shown as windings 51 are made of a material herein.
- the structure is considered exemplary of those expected to find broad-scale use for containment of fusion reaction.
- FIGS. 8 and 9 depict the IV characteristic (9) of the Josephson junction device shown schematically in 8.
- the structure consists of two superconducting layers 61 and 62 separated by a tunneling barrier 63.
- Use of material of the invention (not necessarily identical) for 61 and 64 permit usual Josephson action at higher temperatures than previously permitted.
- Josephson junction devices are described in M. R. Beasley and C. J. Kircher "Josephson Junction Electronics: Materials Issues and Fabrication Techniques", ibid.
- FIG. 10 is a perspective view of a section of superconducting stripline. Structures of the type depicted usefully serve as interconnections (rather than many-kilometer long distance transmission). It is structures of this type that are expected to permit operation at significantly increased speed of present commercial apparatus.
- FIG. 11 is on coordinate units in milliohms on the ordinate and temperature in Kelvin on the abscissa shows resistive values measured in the manner described in the description of FIG. 2.
- the particular composition is that of Example 8 (Ba 2 YCu 3 O 9- ⁇ ).
- the significance of processing temperature on superconducting properties is exemplified by the characteristics shown in FIG. 11 with particular attention to evidence of T c onset .
- point 90 represents a break in the normal resistance the temperature characteristic (of usual conductors).
- the change in slope at the temperature of 182 K (point 90) represents a well-marked break in the usual resistance temperature dependence shown in conventional conductors. This behavior is consistent with reported measurements by other workers identified as T c onset .
- Point 91, representing the conventional T c midpoint is at a temperature of 88 K.
- the FIG. is included as representative of the significance of processing conditions on superconducting properties.
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Claims (5)
- Article comprenant une quantité de matière qui présente une résistance électrique nulle à une température supérieure à 77K, ladite matière comprenant du Ba, du Cu et de l'oxygène;
CARACTÉRISÉ EN CE QU'au moins 95% en moles de ladite quantité de matière sont une matière du type perovskite à une seule phase de composition nominale M2M'CU3O9-δ , M étant choisi parmi Ba, Ba et Sr, et Ba et Ca, M' étant choisi parmi Y, Eu, Lu, La, Sc, Pr et des combinaisons de ceux-ci, et 1,9≤δ≤2,5. - Article suivant la revendication 1, dans lequel au moins 95% en moles de ladite quantité de matière ont une structure cristalline orthorhombique.
- Article suivant la revendication 1 ou 2, dans lequel M est supérieur à 50% Ba.
- Article suivant l'une quelconque des revendications 1 à 3, dans lequel M' est d'au moins 75% en atomes Y.
- Article suivant l'une quelconque des revendications 1 à 4, dans lequel M' est du Y et M est du Ba, et dans lequel δ est d'environ 2,1.
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US168287A | 1987-01-09 | 1987-01-09 | |
US1682 | 1987-01-09 | ||
US21229 | 1987-03-03 | ||
US07/021,229 US6635603B1 (en) | 1987-01-09 | 1987-03-03 | Devices and systems based on novel superconducting material |
US07/024,046 US6638894B1 (en) | 1987-01-09 | 1987-03-10 | Devices and systems based on novel superconducting material |
US24046 | 1987-03-10 |
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EP0274407A2 EP0274407A2 (fr) | 1988-07-13 |
EP0274407A3 EP0274407A3 (en) | 1989-03-15 |
EP0274407B1 true EP0274407B1 (fr) | 1996-06-19 |
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EP88300018A Expired - Lifetime EP0274407B1 (fr) | 1987-01-09 | 1988-01-05 | Dispositifs et systèmes basés sur des matériaux supraconducteurs |
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US (1) | US6638894B1 (fr) |
EP (1) | EP0274407B1 (fr) |
JP (1) | JPH07121805B2 (fr) |
AT (1) | ATE139652T1 (fr) |
AU (1) | AU586940B2 (fr) |
DE (1) | DE3855371T2 (fr) |
DK (1) | DK172574B1 (fr) |
GR (1) | GR3020936T3 (fr) |
HK (1) | HK179296A (fr) |
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US6630425B1 (en) * | 1987-01-09 | 2003-10-07 | Lucent Technologies Inc. | Devices and systems based on novel superconducting material |
US7135438B1 (en) * | 1987-01-09 | 2006-11-14 | Lucent Technologies Inc. | Method of making cuprate superconducting material |
JPS649813A (en) * | 1987-01-27 | 1989-01-13 | Agency Ind Science Techn | Superconductor and production thereof |
DE3850580T2 (de) * | 1987-01-30 | 1994-10-27 | Hitachi Ltd | Supraleiteranordnung. |
US5232905A (en) * | 1987-01-30 | 1993-08-03 | Hitachi, Ltd. | High Tc superconducting device with weak link between two superconducting electrodes |
GB2201955B (en) * | 1987-03-11 | 1991-09-18 | Ibm | Electrically superconducting compositions and processes for their preparation |
JP2711253B2 (ja) * | 1987-03-18 | 1998-02-10 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 超伝導膜及びその形成方法 |
EP0283620A1 (fr) * | 1987-03-25 | 1988-09-28 | Semiconductor Energy Laboratory Co., Ltd. | Céramiques supraconductrices |
JPS63239115A (ja) * | 1987-03-27 | 1988-10-05 | Sanyo Electric Co Ltd | 超伝導物質並びにその製造方法 |
US5204318A (en) * | 1987-03-27 | 1993-04-20 | Massachusetts Institute Of Technology | Preparation of superconducting oxides and oxide-metal composites |
US4952554A (en) * | 1987-04-01 | 1990-08-28 | At&T Bell Laboratories | Apparatus and systems comprising a clad superconductive oxide body, and method for producing such body |
JP2577380B2 (ja) * | 1987-04-15 | 1997-01-29 | 新技術事業団 | 超伝導性材料 |
JPS63270339A (ja) * | 1987-04-24 | 1988-11-08 | Nec Corp | 酸化物超伝導体組成物 |
JP2597578B2 (ja) * | 1987-05-11 | 1997-04-09 | 株式会社東芝 | 超電導体の製造方法 |
JPH07106894B2 (ja) * | 1987-05-12 | 1995-11-15 | 松下電器産業株式会社 | 酸化物超伝導材料とその製造方法 |
JP2752969B2 (ja) * | 1987-05-25 | 1998-05-18 | 株式会社東芝 | 酸化物超電導体 |
US5079222A (en) * | 1987-08-31 | 1992-01-07 | Semiconductor Energy Laboratory Co., Ltd. | Superconducting ceramic circuits and manufacturing method for the same |
JP2510650B2 (ja) * | 1988-01-29 | 1996-06-26 | 株式会社日立製作所 | 超電導スイツチ素子 |
GB8815102D0 (en) * | 1988-06-24 | 1988-08-03 | Plessey Co Plc | Mixed phase ceramic compounds |
US5523282A (en) * | 1988-08-18 | 1996-06-04 | Trw Inc. | High-frequency substrate material for thin-film layered perovskite superconductors |
DE3829227A1 (de) * | 1988-08-29 | 1990-03-01 | Kabelmetal Electro Gmbh | Supraleitendes langgestrecktes gut aus einem beschichteten gewellten metallrohr |
US7608785B2 (en) * | 2004-04-27 | 2009-10-27 | Superpower, Inc. | System for transmitting current including magnetically decoupled superconducting conductors |
CN101728019B (zh) * | 2004-12-23 | 2013-08-28 | 超导技术公司 | 一种超导制品 |
WO2011158490A1 (fr) * | 2010-06-16 | 2011-12-22 | パナソニック株式会社 | Film piézoélectrique, tête à jet d'encre, procédé pour former une image utilisant la tête à jet d'encre, capteur de vitesse angulaire, procédé de détermination de la vitesse angulaire à l'aide du capteur de vitesse angulaire, élément produisant une puissance piézoélectrique, et procédé de production de puissance utilisant l'élément produisant la puissance piézoélectrique |
CN103348501B (zh) * | 2012-02-03 | 2016-08-31 | 松下知识产权经营株式会社 | 压电体膜、喷墨头、使用喷墨头形成图像的方法、角速度传感器、使用角速度传感器测定角速度的方法、压电发电元件以及使用压电发电元件的发电方法 |
JP5887503B2 (ja) * | 2014-02-26 | 2016-03-16 | パナソニックIpマネジメント株式会社 | 圧電体膜ならびにその用途 |
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EP0280812A1 (fr) * | 1987-01-12 | 1988-09-07 | University Of Houston | Matériaux composés supraconducteurs à structure plane-carrée |
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EP0275343A1 (fr) * | 1987-01-23 | 1988-07-27 | International Business Machines Corporation | Composés supraconducteurs à structure du même type que celui du composé K2NiF4 ayant une haute température de transition et procédé pour sa fabrication |
JPS649813A (en) * | 1987-01-27 | 1989-01-13 | Agency Ind Science Techn | Superconductor and production thereof |
GB2201955B (en) * | 1987-03-11 | 1991-09-18 | Ibm | Electrically superconducting compositions and processes for their preparation |
NL194728C (nl) * | 1987-04-16 | 2003-01-07 | Hollis Eden Pharmaceuticals | Farmaceutisch preparaat geschikt voor de profylaxe of therapie van een retrovirale infectie of een complicatie of gevolg daarvan. |
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EP0280812A1 (fr) * | 1987-01-12 | 1988-09-07 | University Of Houston | Matériaux composés supraconducteurs à structure plane-carrée |
Non-Patent Citations (2)
Title |
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PHYSICAL REVIEW LETTERS, vol. 58, no. 16, 20th April 1987, pages 1676-1679, The American Physical Society, New York, US; R.J. CAVA et al.: "Bulk superconductivity at 91 K in single-phase oxygen-deficient Perovskite Ba2YCu309-delta" * |
Revue de Chimie minérale, t.21, 1984, pp. 407-425; C. Michel and B. Raveau * |
Also Published As
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DK7188D0 (da) | 1988-01-08 |
JPH07121805B2 (ja) | 1995-12-25 |
DK7188A (da) | 1988-07-10 |
HK179296A (en) | 1996-10-04 |
ATE139652T1 (de) | 1996-07-15 |
US6638894B1 (en) | 2003-10-28 |
DK172574B1 (da) | 1999-01-25 |
EP0274407A3 (en) | 1989-03-15 |
DE3855371D1 (de) | 1996-07-25 |
AU1001488A (en) | 1988-08-11 |
DE3855371T2 (de) | 1996-11-28 |
GR3020936T3 (en) | 1996-12-31 |
EP0274407A2 (fr) | 1988-07-13 |
AU586940B2 (en) | 1989-07-27 |
JPS63248722A (ja) | 1988-10-17 |
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