EP0178596B2 - Silicon nozzle structures and method of manufacture - Google Patents
Silicon nozzle structures and method of manufacture Download PDFInfo
- Publication number
- EP0178596B2 EP0178596B2 EP85112882A EP85112882A EP0178596B2 EP 0178596 B2 EP0178596 B2 EP 0178596B2 EP 85112882 A EP85112882 A EP 85112882A EP 85112882 A EP85112882 A EP 85112882A EP 0178596 B2 EP0178596 B2 EP 0178596B2
- Authority
- EP
- European Patent Office
- Prior art keywords
- cross
- sectional area
- silicon
- exit
- aperture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 18
- 238000000034 method Methods 0.000 title claims description 18
- 229910052710 silicon Inorganic materials 0.000 title claims description 17
- 239000010703 silicon Substances 0.000 title claims description 17
- 238000004519 manufacturing process Methods 0.000 title description 2
- 239000010410 layer Substances 0.000 claims description 23
- 238000005530 etching Methods 0.000 claims description 20
- 239000012528 membrane Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 8
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 7
- 230000004888 barrier function Effects 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 4
- 239000002210 silicon-based material Substances 0.000 claims description 2
- 239000002344 surface layer Substances 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims 2
- 238000000576 coating method Methods 0.000 claims 2
- 239000012530 fluid Substances 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000003518 caustics Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910017974 NH40H Inorganic materials 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910000000 metal hydroxide Inorganic materials 0.000 description 1
- 150000004692 metal hydroxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1626—Manufacturing processes etching
- B41J2/1629—Manufacturing processes etching wet etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/162—Manufacturing of the nozzle plates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1631—Manufacturing processes photolithography
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1632—Manufacturing processes machining
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/164—Manufacturing processes thin film formation
- B41J2/1642—Manufacturing processes thin film formation thin film formation by CVD [chemical vapor deposition]
Definitions
- Monocrystalline silicon bodies with passages Monocrystalline silicon bodies with passages.
- a monocrystalline, crystallographically oriented silicon wafer may be selectively etched to form one or more reproducible channels of a specific form in the wafer body.
- the specific type of the channel described in that patent has a rectangular entrance cross-section which continues to an intermediate rectangular cross-section, smaller than the entrance cross-section, and then to an exit cross-section which has a shape other than rectangular.
- Achannel of this specific type is established by either of two disclosed processes, both of which utilize a heavily doped p+ layer (patterned in the one process and unpatterned in the other) as an etchant barrier.
- a silicon wafer is heavily doped to place it near or at saturation from one major face to form the p+ etchant barrier. Thereafter, patterned anisotropic etching from the opposite major face proceeds until the p+ barrier is reached.
- the anisotropic etching results in a rectangular entrance cross-section and a rectangular intermediate cross-section defining a membrane smaller in size than the entrance cross-section.
- the etching Process is continued from the entrance side until an opening is made through the membrane.
- the other process utilizes patterned isotropic etching from the opposite side (exit side) of the nozzle to complete a passage through the membrane to the intermediate cross-section.
- a standard commercially available semi-conductor wafer of crys- tallo-graphically oriented, monocrystalline p-type silicon is used to produce a single fluid nozzle or an array of nozzles directly and without the need for mechanical or chemical polishing of the two major surfaces of the wafer by a process wherein a low saturation n surface layer is formed on at least one major surface of the wafer.
- Materials resistant to an anisotropic etchant, later employed, are then deposited on both surfaces of the wafer. Thereafter, aperture masks defining the entrance and exit areas of a nozzle are formed on these major surfaces and the exit area is coated with a material which is both resistant to an etching solution and which provides an electrical connection to the n layer.
- Acavity is anisotropically etched from the entrance area of the wafer through to the n layer at the exit side by immersing the wafer in a caustic etching solution.
- a potential applied across the p/n junction at the exit side of the wafer electro-chemically stops the etching action leaving a membrane having a thickness substantially equal to the n-layer.
- a passage is then anisotropically etched through the membrane from the exit side to complete the nozzle structure.
- some of the more important characteristics required of the nozzle are the uniformity in the size of each respective nozzle, spatial distribution of the nozzles in an array, their resistance to cracking under the fluidic pressures encountered in the system, provision of an efficient mechanical impedance match between the fluid supply and the exit opening, as well as, their resistance to wear caused by the high velocity fluid flow through the nozzle structure.
- a substrate 10 is shown having an array of uniform openings 11 therein.
- Each opening 11 starts with an initial, substantially square area and tapers to and terminates in a substantially square area smaller than the initial square area defining a membrane 12.
- each membrane 12 in turn has an opening 13 extending therethrough which starts in a substantially square area smaller than the square area of each respective membrane 12 and terminates in a substantially square area larger than the starting square area of said opening.
- Both horizontal axes of the openings 13 in the membrane 12 are substantially aligned with the horizontal axes of each corresponding opening 11 in the main body of the wafer 10 by virtue of the wafer 10 crystallography.
- Figs. 3 through 8 illustrate a sequence of process steps for production of an aperture in a single crystal silicon wafer 10 for forming one fluid nozzle or an array of nozzles. It is to be understood that the following process steps may be used in a different sequence and that otherfilm materials for performing the same functions described below may be used. Furthermore, film formation, size, thickness and the like, may also be varied.
- the wafer 10 is of single crystal (100) oriented p type silicon with electrical resistivity of 0,5 to 100 ohm-cm, approximately 495 f..lm to 515 f..lm (19,5 to 20,5 mils) thick having front 14 and back 15 surfaces.
- the (100) planes are parallel to surfaces 14 and 15. As shown in Fig.
- phosphorous is diffused into the front 14 and back 15 surfaces of the silicon wafer 10 to a depth of about 5 ⁇ m forming n type layers 16 and 17.
- the diffusion is accomplished in a well-known manner by having a gas mixture containing 0,75 % PH 3 , 1 % 2 0, and the make-up of Ar and N 2 flow for 30 minutes past the silicon wafer 10 which is maintained at 950°C. This is followed by a long drive-in period (1050°C for 22 hours) to achieve a thick layer (about 5 microns). Since the final concentration of phosphorous in the n layers 16 and 17 is very low, this diffusion step introduces very little stress into the silicon wafer 10, and consequently the silicon structure retains its strength.
- both front 14 and back 15 surfaces of the wafer 10 are coated with a protective material such as LPCVD silicon nitride forming layers 18 and 19 which can resist a long etching period in a caustic (KOH) solution.
- a protective material such as LPCVD silicon nitride forming layers 18 and 19 which can resist a long etching period in a caustic (KOH) solution.
- LPCVD silicon nitride forming layers 18 and 19 which can resist a long etching period in a caustic (KOH) solution.
- LPCVD silicon nitride forming layers 18 and 19 which can resist a long etching period in a caustic (KOH) solution.
- Oxide layers (not shown) less than 0,5 ⁇ m thick may be grown on both sides of layers 18 and 19 to reduce the effect of stress between nitride and silicon and to improve adhesion of photoresist to nitride.
- masks are prepared corresponding to the desired entrance 20 and exit 21 areas of the nozzle.
- the masks for both entrance 20 and exit 21 areas are made circular in shape since the openings in the silicon wafer 10 defined by circular masks will etch out to squares parallel to the 100 planes, each square circumscribing its respective circle. Use of circular masks eliminates possible error due to the theta misalignment which may occur when a square shaped mask is used.
- the silicon nitride layers 18 and 19 are photoshaped simultaneously on both sides using a two-sided photospinner (not shown) and a two-sided aligner (not shown). The resulting structure after etching away of portions of layers 18 and 19 defining the entrance 20 and exit 21 areas, is shown in Fig. 5.
- the exit area 21 is then protected from the etching solution by covering it with a metallic layer 22, as shown in Fig. 6, or by use of a hermetic mechanical fixture (not shown). Thereafter the wafer is submerged in a hot (80-85°C) KOH solution (not shown) and a potential is placed across the p/n junction at the back side 15 by connecting the positive side of an electrical power source (not shown) with the metallic layer 22 protecting the exit area 21.
- Other alkaline etch solutions such as metal hydroxides of the Group I-A elements of the Periodic Table, for example, NaOH, NH 4 0H, or others, may be used.
- electrochemically controlled thinning process for semi-conductors is well-known in the art and is described in detail in US-A-3,689,389.
- the opening 11 in the monocrystalline silicon wafer 10 is etched anisotropically until the diffused layer 17 at the back side 25 is reached, at which time the etching action stops due to an oxide layer (not shown) which is caused to grow at the p/n junction due to the applied potential across the junction.
- the (111) plane is a slow etch plane in monocrystalline silicon material when a KOH etching solution is used.
- the etching step produces a pyramidal opening in the wafer 10 which opening truncates in a membrane 12 when it encounters the electrochemical etch barrier set up at the silicon and diffused layer 17 interface (p/n junction).
- the wafer 10 is removed from the etching solution, the protective metallic layer 22 and associated electrical connection on the exit side are removed, and the entrance side 20 is protected from the etching solution usually by a layer 24 formed by air oxidation.
- the wafer 10 is then re-submersed into the etching solution and a pyramidal passage is etched aniso-tropically from the back surface 15 to form the exit opening 13.
- the resulting structure is shown in Fig. 7.
- the protective coatings 18,19 and 24 are then removed leaving a completed pure silicon nozzle structure as shown in Fig. 8.
- the initial opening of the entrance 20 is about 890 f..lm (35 mils) wide and the smallest portion of the exit opening 13 is about 38 ⁇ m to 102 ⁇ m (1,5 to 4 mils) wide.
- the back surface 15 of the wafer 10 may be coated with a material of low surface energy such as Teflon.
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Weting (AREA)
- Nozzles (AREA)
- Special Spraying Apparatus (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US66100584A | 1984-10-15 | 1984-10-15 | |
US661005 | 1984-10-15 |
Publications (4)
Publication Number | Publication Date |
---|---|
EP0178596A2 EP0178596A2 (en) | 1986-04-23 |
EP0178596A3 EP0178596A3 (en) | 1987-09-16 |
EP0178596B1 EP0178596B1 (en) | 1991-01-16 |
EP0178596B2 true EP0178596B2 (en) | 1994-06-01 |
Family
ID=24651804
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP85112882A Expired - Lifetime EP0178596B2 (en) | 1984-10-15 | 1985-10-11 | Silicon nozzle structures and method of manufacture |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP0178596B2 (es) |
JP (1) | JPS6198558A (es) |
KR (1) | KR930009109B1 (es) |
AU (1) | AU582581B2 (es) |
CA (1) | CA1237020A (es) |
DE (1) | DE3581355D1 (es) |
ES (2) | ES8707144A1 (es) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4791436A (en) * | 1987-11-17 | 1988-12-13 | Hewlett-Packard Company | Nozzle plate geometry for ink jet pens and method of manufacture |
DE4222140C2 (de) * | 1992-07-06 | 1994-06-16 | Heinzl Joachim | Aerostatisches Miniaturlager |
US6183064B1 (en) | 1995-08-28 | 2001-02-06 | Lexmark International, Inc. | Method for singulating and attaching nozzle plates to printheads |
US6120131A (en) * | 1995-08-28 | 2000-09-19 | Lexmark International, Inc. | Method of forming an inkjet printhead nozzle structure |
WO1998051506A1 (fr) * | 1997-05-14 | 1998-11-19 | Seiko Epson Corporation | Procede de formation d'ajutage pour injecteurs et procede de fabrication d'une tete a jet d'encre |
US6491380B2 (en) * | 1997-12-05 | 2002-12-10 | Canon Kabushiki Kaisha | Liquid discharging head with common ink chamber positioned over a movable member |
EP0921004A3 (en) * | 1997-12-05 | 2000-04-26 | Canon Kabushiki Kaisha | Liquid discharge head, recording apparatus, and method for manufacturing liquid discharge heads |
JP2000198199A (ja) | 1997-12-05 | 2000-07-18 | Canon Inc | 液体吐出ヘッドおよびヘッドカートリッジおよび液体吐出装置および液体吐出ヘッドの製造方法 |
US6463656B1 (en) * | 2000-06-29 | 2002-10-15 | Eastman Kodak Company | Laminate and gasket manfold for ink jet delivery systems and similar devices |
KR100944884B1 (ko) * | 2007-11-01 | 2010-03-03 | 주식회사 알파켐 | 비충격 프린팅을 위한 노즐 및 이를 사용한 인쇄방법 |
JP5407162B2 (ja) * | 2008-04-01 | 2014-02-05 | コニカミノルタ株式会社 | インクジェットヘッド、インクジェットヘッドを備えた塗布装置及びインクジェットヘッドの駆動方法 |
KR101291689B1 (ko) * | 2010-08-17 | 2013-08-01 | 엔젯 주식회사 | 정전기력을 이용하는 액적분사장치용 노즐 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
USB789264I5 (es) * | 1969-01-06 | |||
JPS5040616B1 (es) * | 1970-03-18 | 1975-12-25 | ||
US3921916A (en) * | 1974-12-31 | 1975-11-25 | Ibm | Nozzles formed in monocrystalline silicon |
US3958255A (en) * | 1974-12-31 | 1976-05-18 | International Business Machines Corporation | Ink jet nozzle structure |
US3949410A (en) * | 1975-01-23 | 1976-04-06 | International Business Machines Corporation | Jet nozzle structure for electrohydrodynamic droplet formation and ink jet printing system therewith |
US4157935A (en) * | 1977-12-23 | 1979-06-12 | International Business Machines Corporation | Method for producing nozzle arrays for ink jet printers |
JPS5753366A (en) * | 1980-09-17 | 1982-03-30 | Ricoh Co Ltd | Nozzle plate for liquid jet apparatus |
JPS57116656A (en) * | 1981-01-14 | 1982-07-20 | Sharp Corp | Manufacture of orifice for ink jet printer |
JPS57182449A (en) * | 1981-05-07 | 1982-11-10 | Fuji Xerox Co Ltd | Forming method of ink jet multinozzle |
-
1985
- 1985-03-27 CA CA000477672A patent/CA1237020A/en not_active Expired
- 1985-10-02 AU AU48190/85A patent/AU582581B2/en not_active Expired
- 1985-10-11 EP EP85112882A patent/EP0178596B2/en not_active Expired - Lifetime
- 1985-10-11 DE DE8585112882T patent/DE3581355D1/de not_active Expired - Lifetime
- 1985-10-14 ES ES547845A patent/ES8707144A1/es not_active Expired
- 1985-10-14 KR KR1019850007532A patent/KR930009109B1/ko not_active IP Right Cessation
- 1985-10-15 JP JP60227956A patent/JPS6198558A/ja active Pending
-
1987
- 1987-04-13 ES ES1987296483U patent/ES296483Y/es not_active Expired
Also Published As
Publication number | Publication date |
---|---|
KR930009109B1 (ko) | 1993-09-23 |
EP0178596A2 (en) | 1986-04-23 |
AU4819085A (en) | 1986-04-24 |
ES547845A0 (es) | 1987-08-16 |
JPS6198558A (ja) | 1986-05-16 |
EP0178596A3 (en) | 1987-09-16 |
ES8707144A1 (es) | 1987-08-16 |
ES296483U (es) | 1987-10-16 |
KR860003109A (ko) | 1986-05-19 |
ES296483Y (es) | 1988-04-16 |
AU582581B2 (en) | 1989-04-06 |
CA1237020A (en) | 1988-05-24 |
EP0178596B1 (en) | 1991-01-16 |
DE3581355D1 (de) | 1991-02-21 |
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