EP0020708A4 - SEMICONDUCTOR MEMORY DEVICE. - Google Patents

SEMICONDUCTOR MEMORY DEVICE.

Info

Publication number
EP0020708A4
EP0020708A4 EP19800900104 EP80900104A EP0020708A4 EP 0020708 A4 EP0020708 A4 EP 0020708A4 EP 19800900104 EP19800900104 EP 19800900104 EP 80900104 A EP80900104 A EP 80900104A EP 0020708 A4 EP0020708 A4 EP 0020708A4
Authority
EP
European Patent Office
Prior art keywords
storage device
semiconductor storage
semiconductor
storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP19800900104
Other languages
German (de)
English (en)
French (fr)
Other versions
EP0020708A1 (en
Inventor
Murray Lawrence Trudel
George Corbin Lockwood
Gilbert Glenn Evans
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NCR Voyix Corp
Original Assignee
NCR Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NCR Corp filed Critical NCR Corp
Publication of EP0020708A1 publication Critical patent/EP0020708A1/en
Publication of EP0020708A4 publication Critical patent/EP0020708A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/299—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations
    • H10D62/307—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations the doping variations being parallel to the channel lengths

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Volatile Memory (AREA)
  • Selective Calling Equipment (AREA)
  • Arrangements For Transmission Of Measured Signals (AREA)
  • Time-Division Multiplex Systems (AREA)
EP19800900104 1978-11-27 1980-06-03 SEMICONDUCTOR MEMORY DEVICE. Withdrawn EP0020708A4 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US96401478A 1978-11-27 1978-11-27
US964014 1978-11-27

Publications (2)

Publication Number Publication Date
EP0020708A1 EP0020708A1 (en) 1981-01-07
EP0020708A4 true EP0020708A4 (en) 1983-03-07

Family

ID=25508027

Family Applications (1)

Application Number Title Priority Date Filing Date
EP19800900104 Withdrawn EP0020708A4 (en) 1978-11-27 1980-06-03 SEMICONDUCTOR MEMORY DEVICE.

Country Status (3)

Country Link
EP (1) EP0020708A4 (enrdf_load_stackoverflow)
JP (1) JPS55500965A (enrdf_load_stackoverflow)
WO (1) WO1980001122A1 (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1191561B (it) * 1986-06-03 1988-03-23 Sgs Microelettrica Spa Dispositivo di memoria non labile a semiconduttore con porta non connessa (floating gate) alterabile elettricamente
JP2744126B2 (ja) * 1990-10-17 1998-04-28 株式会社東芝 半導体装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2418582A1 (de) * 1974-04-17 1975-10-30 Siemens Ag Mnos-transistor, insbesondere mnostransistor mit kurzer kanalzone, fuer kurze einschreibzeiten
DE2720715A1 (de) * 1977-05-07 1978-11-09 Itt Ind Gmbh Deutsche Mnos-speichertransistor

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3719866A (en) * 1970-12-03 1973-03-06 Ncr Semiconductor memory device
JPS5024084A (enrdf_load_stackoverflow) * 1973-07-05 1975-03-14
US4068217A (en) * 1975-06-30 1978-01-10 International Business Machines Corporation Ultimate density non-volatile cross-point semiconductor memory array
US4017888A (en) * 1975-12-31 1977-04-12 International Business Machines Corporation Non-volatile metal nitride oxide semiconductor device
JPS52105784A (en) * 1976-03-01 1977-09-05 Sony Corp Mios type memory unit
US4151538A (en) * 1978-01-30 1979-04-24 Rca Corp. Nonvolatile semiconductive memory device and method of its manufacture

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2418582A1 (de) * 1974-04-17 1975-10-30 Siemens Ag Mnos-transistor, insbesondere mnostransistor mit kurzer kanalzone, fuer kurze einschreibzeiten
DE2720715A1 (de) * 1977-05-07 1978-11-09 Itt Ind Gmbh Deutsche Mnos-speichertransistor

Also Published As

Publication number Publication date
WO1980001122A1 (en) 1980-05-29
EP0020708A1 (en) 1981-01-07
JPS55500965A (enrdf_load_stackoverflow) 1980-11-13

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EP0020708A4 (en) SEMICONDUCTOR MEMORY DEVICE.

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

DET De: translation of patent claims
AK Designated contracting states

Designated state(s): DE GB NL

17P Request for examination filed

Effective date: 19801103

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 19841108

RIN1 Information on inventor provided before grant (corrected)

Inventor name: TRUDEL, MURRAY LAWRENCE

Inventor name: LOCKWOOD, GEORGE CORBIN

Inventor name: EVANS, GILBERT, GLENN