EA035316B9 - Способ обработки сапфирового материала пучком одно- и/или многозарядных ионов газа для получения антибликового материала - Google Patents
Способ обработки сапфирового материала пучком одно- и/или многозарядных ионов газа для получения антибликового материалаInfo
- Publication number
- EA035316B9 EA035316B9 EA201692408A EA201692408A EA035316B9 EA 035316 B9 EA035316 B9 EA 035316B9 EA 201692408 A EA201692408 A EA 201692408A EA 201692408 A EA201692408 A EA 201692408A EA 035316 B9 EA035316 B9 EA 035316B9
- Authority
- EA
- Eurasian Patent Office
- Prior art keywords
- sapphire material
- ion beam
- charged gas
- gas ion
- treating
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F7/00—Compounds of aluminium
- C01F7/02—Aluminium oxide; Aluminium hydroxide; Aluminates
- C01F7/021—After-treatment of oxides or hydroxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0015—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterized by the colour of the layer
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/20—Aluminium oxides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/04—After-treatment of single crystals or homogeneous polycrystalline material with defined structure using electric or magnetic fields or particle radiation
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/02—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of crystals, e.g. rock-salt, semi-conductors
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
- G02B1/113—Anti-reflection coatings using inorganic layer materials only
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/12—Optical coatings produced by application to, or surface treatment of, optical elements by surface treatment, e.g. by irradiation
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
- G06F3/0446—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a grid-like structure of electrodes in at least two directions, e.g. using row and column electrodes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5826—Treatment with charged particles
- C23C14/5833—Ion beam bombardment
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Theoretical Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Human Computer Interaction (AREA)
- Life Sciences & Earth Sciences (AREA)
- Geology (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
- Electron Sources, Ion Sources (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
Abstract
В изобретении способ обработки сапфирового материала включает облучение поверхности сапфирового материала, причем поверхность прилегает к среде, отличной от сапфирового материала, пучком одно- и/или многозарядных ионов газа так, чтобы получить ионно-имплантированный слой в сапфировом материале, причем ионы выбраны из ионов элементов из списка, состоящего из гелия (He), неона (Ne), аргона (Ar), криптона (Kr), ксенона (Xe), бора (B), углерода (C), азота (N), кислорода (O), фтора (F), кремния (Si), фосфора (P) и серы (S). Обработка дает антибликовый эффект на обработанных материалах (61, 62, 63) по сравнению с необработанными подложками (60). Указанный способ может быть использован для получения емкостной сенсорной панели с высоким пропусканием в видимом диапазоне.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1401172A FR3021332B1 (fr) | 2014-05-23 | 2014-05-23 | Procede de traitement par un faisceau d'ions d'un gaz mono et multicharges pour produire des materiaux en saphir synthetique antireflet |
FR1402293A FR3027120B1 (fr) | 2014-10-09 | 2014-10-09 | Dalle tactile capacitive a haute transmission dans le domaine visible et inrayable |
PCT/EP2015/056116 WO2015176850A1 (en) | 2014-05-23 | 2015-03-23 | Single- and/or multi-charged gas ion beam treatment method for producing an anti-glare sapphire material |
Publications (3)
Publication Number | Publication Date |
---|---|
EA201692408A1 EA201692408A1 (ru) | 2017-04-28 |
EA035316B1 EA035316B1 (ru) | 2020-05-27 |
EA035316B9 true EA035316B9 (ru) | 2020-07-27 |
Family
ID=52727135
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EA201692408A EA035316B9 (ru) | 2014-05-23 | 2015-03-23 | Способ обработки сапфирового материала пучком одно- и/или многозарядных ионов газа для получения антибликового материала |
EA201692406A EA034019B1 (ru) | 2014-05-23 | 2015-05-22 | СПОСОБ ОБРАБОТКИ ПОВЕРХНОСТИ ДЕТАЛИ ИЗ СИНТЕТИЧЕСКОГО САПФИРОВОГО МАТЕРИАЛА ДЛЯ МОДИФИКАЦИИ ОТРАЖАЮЩИХ СВОЙСТВ УКАЗАННОЙ ПОВЕРХНОСТИ В ИНТЕРВАЛЕ ДЛИН ВОЛН 400-800 нм |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EA201692406A EA034019B1 (ru) | 2014-05-23 | 2015-05-22 | СПОСОБ ОБРАБОТКИ ПОВЕРХНОСТИ ДЕТАЛИ ИЗ СИНТЕТИЧЕСКОГО САПФИРОВОГО МАТЕРИАЛА ДЛЯ МОДИФИКАЦИИ ОТРАЖАЮЩИХ СВОЙСТВ УКАЗАННОЙ ПОВЕРХНОСТИ В ИНТЕРВАЛЕ ДЛИН ВОЛН 400-800 нм |
Country Status (10)
Country | Link |
---|---|
US (2) | US10982312B2 (ru) |
EP (2) | EP3146086B1 (ru) |
JP (2) | JP6878009B2 (ru) |
KR (2) | KR102320294B1 (ru) |
CN (2) | CN106662958B (ru) |
AU (2) | AU2015263472B2 (ru) |
CA (2) | CA2949923A1 (ru) |
EA (2) | EA035316B9 (ru) |
SG (2) | SG11201609845VA (ru) |
WO (2) | WO2015176850A1 (ru) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11535926B2 (en) | 2011-12-23 | 2022-12-27 | Hkbu R&D Licensing Limited | Sapphire thin film coated substrate |
EA035316B9 (ru) * | 2014-05-23 | 2020-07-27 | Кертек | Способ обработки сапфирового материала пучком одно- и/или многозарядных ионов газа для получения антибликового материала |
JPWO2017104443A1 (ja) * | 2015-12-16 | 2018-08-30 | 株式会社アルバック | サファイア基板の製造方法及びサファイア基板 |
EA201892252A1 (ru) * | 2016-04-12 | 2019-03-29 | Агк Гласс Юроп | Противоотражающая устойчивая к царапанию стеклянная подложка и способ ее изготовления |
EP3458625A4 (en) * | 2016-05-19 | 2020-07-29 | Hong Kong Baptist University | SUBSTRATE COATED WITH SAPPHIRE THIN LAYER |
FR3062855B1 (fr) * | 2017-02-14 | 2019-04-19 | Sa Quertech | Procede de traitement par un faisceau d ions pour produire un saphir antifreflet a haute transmittance resistant a la rayure. |
EP3389078A1 (fr) * | 2017-04-13 | 2018-10-17 | The Swatch Group Research and Development Ltd | Procédé d'implantation d'ions multichargés sur une surface d'un objet à traiter et installation pour la mise en oeuvre de ce procédé |
FR3067275B1 (fr) | 2017-06-07 | 2022-08-12 | Timothee Boitouzet | Procede de delignification partielle par voie supercritique ou subcritique et de remplissage d'un materiau ligno-cellulosique |
EP3632876A1 (fr) * | 2017-10-12 | 2020-04-08 | The Swatch Group Research and Development Ltd | Particules de poudre céramique revetue |
EP3503159B1 (fr) * | 2017-12-20 | 2021-05-05 | The Swatch Group Research and Development Ltd | Procédé d'implantation d'ions sur une surface d'un objet à traiter |
FR3077895B1 (fr) * | 2018-02-09 | 2020-02-28 | Sas Woodoo | Dispositif de detection tactile avec interface tactile en materiau composite |
US10488560B2 (en) * | 2018-02-13 | 2019-11-26 | Visera Technologies Company Limited | Optical elements |
EP3556911A1 (fr) * | 2018-04-19 | 2019-10-23 | Comadur S.A. | Procédé de structuration d'un motif décoratif ou technique dans un objet réalisé en un matériau amorphe, semi-cristallin ou cristallin au moins partiellement transparent |
WO2019238868A1 (en) * | 2018-06-14 | 2019-12-19 | Agc Glass Europe | Reflectance reduction of substrate for transmitting infrared light |
EP3636796A1 (fr) * | 2018-10-10 | 2020-04-15 | Comadur S.A. | Procede de durcissement d'un traitement antireflet depose sur un substrat transparent et substrat transparent comprenant un traitement antireflet durci |
TW202038326A (zh) * | 2019-01-11 | 2020-10-16 | 日商索尼半導體解決方案公司 | 氧化物半導體膜之蝕刻方法 |
EP3696151A1 (fr) * | 2019-02-18 | 2020-08-19 | Rolex Sa | Glace de montre colorée |
EP4113220B1 (fr) * | 2021-07-02 | 2024-08-28 | Comadur SA | Procédé de traitement de surface d'une pierre, notamment pour l'horlogerie |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060210783A1 (en) * | 2005-03-18 | 2006-09-21 | Seder Thomas A | Coated article with anti-reflective coating and method of making same |
FR2899242A1 (fr) * | 2007-04-05 | 2007-10-05 | Quertech Ingenierie Sarl | Procede de durcissement par implantation d'ions d'helium dans une piece metallique |
US20130328798A1 (en) * | 2012-06-06 | 2013-12-12 | Ga-Lane Chen | Touch panel with sapphire substrate and display device |
EP2752507A1 (en) * | 2013-01-08 | 2014-07-09 | Apple Inc. | Ion implant indicia for cover glass or display component |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06330314A (ja) * | 1993-05-17 | 1994-11-29 | Japan Steel Works Ltd:The | イオン注入法による傾斜機能材料の製造方法および製造装置 |
US6979630B2 (en) * | 2002-08-08 | 2005-12-27 | Isonics Corporation | Method and apparatus for transferring a thin layer of semiconductor material |
FR2879625B1 (fr) * | 2004-02-04 | 2007-04-27 | Guernalec Frederic | Dispositif de nitruration par implantation ionique d'une piece en alliage d'aluminium et procede mettant en oeuvre un tel dispositif |
JP2007109474A (ja) * | 2005-10-12 | 2007-04-26 | Fujifilm Corp | イオン注入装置 |
JP2009216452A (ja) * | 2008-03-07 | 2009-09-24 | Seiko Epson Corp | 透光性部材、時計、および透光性部材の製造方法 |
JP5463352B2 (ja) * | 2008-06-12 | 2014-04-09 | コリア アトミック エナジー リサーチ インスティチュート | 発色調節されたサファイアの製造方法 |
TWI453949B (zh) * | 2009-12-30 | 2014-09-21 | Hon Hai Prec Ind Co Ltd | 發光二極體製作方法 |
TWM443936U (en) * | 2011-11-17 | 2012-12-21 | Tera Xtal Technology Corp | Touch panel structure |
KR20130065097A (ko) * | 2011-12-09 | 2013-06-19 | 엘지이노텍 주식회사 | 발광 소자의 제조 방법 |
US8852695B2 (en) * | 2012-09-10 | 2014-10-07 | The Research Foundation For The State University Of New York | Optical barriers, waveguides, and methods for fabricating barriers and waveguides for use in harsh environments |
US9623628B2 (en) * | 2013-01-10 | 2017-04-18 | Apple Inc. | Sapphire component with residual compressive stress |
CN104145320B (zh) * | 2013-02-12 | 2018-02-02 | 苹果公司 | 多步骤离子注入 |
US9416442B2 (en) * | 2013-03-02 | 2016-08-16 | Apple Inc. | Sapphire property modification through ion implantation |
EP2778252A3 (en) * | 2013-03-15 | 2014-12-10 | Apple Inc. | Layered Coatings For Sapphire Structure |
FR3009217B1 (fr) * | 2013-08-01 | 2016-10-28 | Quertech | Procede de traitement de poudre a base d'oxyde de cerium |
EA035316B9 (ru) * | 2014-05-23 | 2020-07-27 | Кертек | Способ обработки сапфирового материала пучком одно- и/или многозарядных ионов газа для получения антибликового материала |
JP2017531609A (ja) * | 2014-10-24 | 2017-10-26 | エージーシー グラス ユーロップAgc Glass Europe | イオン注入方法およびイオン注入されたガラス基材 |
US10280504B2 (en) * | 2015-09-25 | 2019-05-07 | Apple Inc. | Ion-implanted, anti-reflective layer formed within sapphire material |
ES2883165T3 (es) * | 2016-04-12 | 2021-12-07 | Agc Inc | Uso de implantación de iones para reducir la reflectancia y mantener la neutralidad del color en la reflectancia de un sustrato de vidrio |
US20190119154A1 (en) * | 2016-04-12 | 2019-04-25 | Agc Glass Europe | Glass substrate with reduced internal reflectance and method for manufacturing the same |
BR112018070866A2 (pt) * | 2016-04-12 | 2019-02-05 | Agc Glass Company North America | substrato de vidro refletivo azul e método de fabricação do mesmo |
EA201892252A1 (ru) * | 2016-04-12 | 2019-03-29 | Агк Гласс Юроп | Противоотражающая устойчивая к царапанию стеклянная подложка и способ ее изготовления |
CA3019255A1 (en) * | 2016-04-12 | 2017-10-19 | Agc Glass Europe | Heat treatable antireflective glass substrate and method for manufacturing the same |
US11066329B2 (en) * | 2016-04-12 | 2021-07-20 | Agc Glass Europe | Antireflective glass substrate and method for manufacturing the same |
FR3062658B1 (fr) * | 2017-02-03 | 2022-06-24 | Sa Quertech | Procede de traitement antireflectif et resistant a la rayure dans un saphir synthetique |
FR3062855B1 (fr) * | 2017-02-14 | 2019-04-19 | Sa Quertech | Procede de traitement par un faisceau d ions pour produire un saphir antifreflet a haute transmittance resistant a la rayure. |
EP3389078A1 (fr) * | 2017-04-13 | 2018-10-17 | The Swatch Group Research and Development Ltd | Procédé d'implantation d'ions multichargés sur une surface d'un objet à traiter et installation pour la mise en oeuvre de ce procédé |
-
2015
- 2015-03-23 EA EA201692408A patent/EA035316B9/ru not_active IP Right Cessation
- 2015-03-23 US US15/312,572 patent/US10982312B2/en active Active
- 2015-03-23 SG SG11201609845VA patent/SG11201609845VA/en unknown
- 2015-03-23 CA CA2949923A patent/CA2949923A1/en not_active Abandoned
- 2015-03-23 CN CN201580036710.2A patent/CN106662958B/zh active Active
- 2015-03-23 AU AU2015263472A patent/AU2015263472B2/en not_active Ceased
- 2015-03-23 KR KR1020167035994A patent/KR102320294B1/ko active IP Right Grant
- 2015-03-23 JP JP2016568901A patent/JP6878009B2/ja active Active
- 2015-03-23 WO PCT/EP2015/056116 patent/WO2015176850A1/en active Application Filing
- 2015-03-23 EP EP15711748.2A patent/EP3146086B1/en active Active
- 2015-05-22 AU AU2015261820A patent/AU2015261820B2/en not_active Ceased
- 2015-05-22 WO PCT/EP2015/061363 patent/WO2015177334A1/en active Application Filing
- 2015-05-22 US US15/312,583 patent/US10196731B2/en active Active
- 2015-05-22 EA EA201692406A patent/EA034019B1/ru not_active IP Right Cessation
- 2015-05-22 SG SG11201609846RA patent/SG11201609846RA/en unknown
- 2015-05-22 CN CN201580035555.2A patent/CN106661724B/zh active Active
- 2015-05-22 JP JP2016568619A patent/JP6626008B2/ja active Active
- 2015-05-22 CA CA2949878A patent/CA2949878A1/en not_active Abandoned
- 2015-05-22 KR KR1020167036057A patent/KR102363999B1/ko active IP Right Grant
- 2015-05-22 EP EP15726066.2A patent/EP3146416B1/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060210783A1 (en) * | 2005-03-18 | 2006-09-21 | Seder Thomas A | Coated article with anti-reflective coating and method of making same |
FR2899242A1 (fr) * | 2007-04-05 | 2007-10-05 | Quertech Ingenierie Sarl | Procede de durcissement par implantation d'ions d'helium dans une piece metallique |
US20130328798A1 (en) * | 2012-06-06 | 2013-12-12 | Ga-Lane Chen | Touch panel with sapphire substrate and display device |
EP2752507A1 (en) * | 2013-01-08 | 2014-07-09 | Apple Inc. | Ion implant indicia for cover glass or display component |
Non-Patent Citations (3)
Title |
---|
CHAIWONG, C. ; YU, L.D. ; SCHINARAKIS, K. ; VILAITHONG, T.: "Optical property modification of ruby and sapphire by N-ion implantation", SURFACE AND COATINGS TECHNOLOGY, ELSEVIER BV, AMSTERDAM, NL, vol. 196, no. 1-3, 22 June 2005 (2005-06-22), AMSTERDAM, NL, pages 108 - 112, XP027609147, ISSN: 0257-8972 * |
KIRKPATRICK A, HARRIS D C, JOHNSON L F: "EFFECT OF ION IMPLANTATION ON THE STRENGTH OF SAPPHIRE AT 300-600�C", JOURNAL OF MATERIALS SCIENCE, KLUWER ACADEMIC PUBLISHERS, DORDRECHT, vol. 36, no. 09, 1 May 2001 (2001-05-01), Dordrecht, pages 2195 - 2201, XP001048280, ISSN: 0022-2461, DOI: 10.1023/A:1017596001471 * |
WILLIAM T. SPRATT, MENGBING HUANG, CHUANLEI JIA, LEI WANG, VIMAL K. KAMINENI, ALAIN C. DIEBOLD, RICHARD MATYI AND HUA XIA: "Effects of hydrogen ion implantation and thermal annealing on structural and optical properties of single-crystal sapphire", ION BEAMS - NEW APPICATIONS FROM MESOSCALE TO NANOSCALE : SYMPOSIUM HELD APRIL 25 - 29, 2011, SAN FRANCISCO, CALIFORNIA, U.S.A., CAMBRIDGE UNIV. PRESS, NEW YORK, NY, vol. 1354, 25 April 2011 (2011-04-25) - 29 April 2011 (2011-04-29), New York, NY, pages 97 - 102, XP002729037, ISBN: 978-1-60511-331-9, DOI: 10.1557/OPL.2011.1279 * |
Also Published As
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EA035316B9 (ru) | Способ обработки сапфирового материала пучком одно- и/или многозарядных ионов газа для получения антибликового материала | |
PH12015501772A1 (en) | Ion beam treatment method for producing superhydrophilic glass materials | |
EP3581209A3 (en) | Reactive gas generation system and method of treatment using reactive gas | |
TW200608489A (en) | Plasma treatment method and plasma etching method | |
PH12020551923A1 (en) | Methods and compositions for treating cancer | |
WO2014110446A3 (en) | Method and system for graphene formation | |
SG10201900327YA (en) | A method of cvd plasma processing with a toroidal plasma processing apparatus | |
TW201614725A (en) | Methods for high precision plasma etching of substrates | |
WO2012001325A3 (fr) | Procede de traitement de surface d'un dispositif de distribution de produit fluide. | |
EP3492428A3 (en) | Nanocrystalline graphene and method of forming nanocrystalline graphene | |
EA029422B9 (ru) | Способ обработки стеклянного материала пучком однозарядных и многозарядных ионов газа для получения антиотражающего стеклянного материала | |
WO2005093777A3 (en) | Ion sources | |
WO2009111535A3 (en) | Method to improve uniformity of chemical mechanical polishing planarization | |
WO2008118738A3 (en) | Apparatus and methods of forming a gas cluster ion beam using a low-pressure source | |
TW200715412A (en) | Method and apparatus for forming metal film | |
WO2012073142A3 (de) | Verfahren und vorrichtung zur ionenimplantation | |
WO2012001330A3 (fr) | Procede de traitement de surface d'un dispositif de distribution de produit fluide. | |
EP4292651A3 (en) | Liponucleotide-based therapy for ards | |
WO2012001326A3 (fr) | Procede de traitement de surface d'un dispositif de distribution de produit fluide | |
WO2015187639A3 (en) | Method of improving ion beam quality in a non-mass-analyzed ion implantation system | |
MX2021001517A (es) | Terapia basada en microarn dirigida contra canceres positivos para proteina citosolica de linfocito 1 (lcp-1). | |
WO2014160886A3 (en) | Systems and methods for treating material surfaces | |
MX2018007275A (es) | Proceso para tratamiento de superficie con fase gaseosa. | |
GB201303809D0 (en) | Method and apparatus | |
WO2012001321A3 (fr) | Procede de traitement de surface elastomere d'un dispositif de distribution de produit fluide. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
TH4A | Publication of the corrected specification to eurasian patent | ||
MM4A | Lapse of a eurasian patent due to non-payment of renewal fees within the time limit in the following designated state(s) |
Designated state(s): AM AZ BY KZ KG TJ TM |