DE966492C - Elektrisch steuerbares Schaltelement aus Halbleitermaterial - Google Patents
Elektrisch steuerbares Schaltelement aus HalbleitermaterialInfo
- Publication number
- DE966492C DE966492C DEP32044A DEP0032044A DE966492C DE 966492 C DE966492 C DE 966492C DE P32044 A DEP32044 A DE P32044A DE P0032044 A DEP0032044 A DE P0032044A DE 966492 C DE966492 C DE 966492C
- Authority
- DE
- Germany
- Prior art keywords
- electrode
- collector
- emitter
- switching element
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims description 34
- 239000000463 material Substances 0.000 title claims description 31
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 230000000694 effects Effects 0.000 claims description 7
- 229910052732 germanium Inorganic materials 0.000 claims description 7
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 239000002344 surface layer Substances 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 239000002800 charge carrier Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 230000000903 blocking effect Effects 0.000 claims description 2
- 238000011109 contamination Methods 0.000 claims description 2
- 239000011810 insulating material Substances 0.000 claims description 2
- 239000012212 insulator Substances 0.000 claims 2
- 239000010410 layer Substances 0.000 description 38
- 230000004888 barrier function Effects 0.000 description 16
- 239000012535 impurity Substances 0.000 description 14
- 230000008859 change Effects 0.000 description 10
- 239000000969 carrier Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 7
- 230000003321 amplification Effects 0.000 description 5
- 238000003199 nucleic acid amplification method Methods 0.000 description 5
- 238000005513 bias potential Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000001035 drying Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 230000002787 reinforcement Effects 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000005686 electrostatic field Effects 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910000906 Bronze Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 241000530268 Lycaena heteronea Species 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 239000002772 conduction electron Substances 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 description 1
- OMZSGWSJDCOLKM-UHFFFAOYSA-N copper(II) sulfide Chemical compound [S-2].[Cu+2] OMZSGWSJDCOLKM-UHFFFAOYSA-N 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229940119177 germanium dioxide Drugs 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 230000010076 replication Effects 0.000 description 1
- 239000012858 resilient material Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 230000005612 types of electricity Effects 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/181—Low-frequency amplifiers, e.g. audio preamplifiers
- H03F3/183—Low-frequency amplifiers, e.g. audio preamplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
- H03F3/16—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
- H03F3/16—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices
- H03F3/165—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices with junction-FET's
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Multimedia (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Photovoltaic Devices (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11168A US2524034A (en) | 1948-02-26 | 1948-02-26 | Three-electrode circuit element utilizing semiconductor materials |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE966492C true DE966492C (de) | 1957-08-14 |
Family
ID=21749158
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEP32044A Expired DE966492C (de) | 1948-02-26 | 1949-01-20 | Elektrisch steuerbares Schaltelement aus Halbleitermaterial |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US2524034A (no) |
| BE (2) | BE486170A (no) |
| CH (2) | CH277131A (no) |
| DE (1) | DE966492C (no) |
| FR (3) | FR972207A (no) |
| GB (2) | GB694021A (no) |
| NL (3) | NL85856C (no) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1175797B (de) * | 1960-12-22 | 1964-08-13 | Standard Elektrik Lorenz Ag | Verfahren zum Herstellen von elektrischen Halb-leiterbauelementen |
| DE1212642B (de) * | 1962-05-29 | 1966-03-17 | Siemens Ag | Halbleiterbauelement, insbesondere Mesatransistor, mit zwei moeglichst kleinflaechigen Elektroden mit parallelen Kanten und Verfahren zum Herstellen |
| DE977615C (de) * | 1950-09-14 | 1967-08-31 | Western Electric Co | Verfahren zur Herstellung eines fuer Signaluebertragungsvorrichtungen bestimmten Halbleiterelements |
| DE1292253B (de) * | 1959-09-26 | 1969-04-10 | Telefunken Patent | Halbleiteranordnung |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2589658A (en) * | 1948-06-17 | 1952-03-18 | Bell Telephone Labor Inc | Semiconductor amplifier and electrode structures therefor |
| US2691750A (en) * | 1948-08-14 | 1954-10-12 | Bell Telephone Labor Inc | Semiconductor amplifier |
| US2770762A (en) * | 1949-04-01 | 1956-11-13 | Int Standard Electric Corp | Crystal triodes |
| BE527524A (no) * | 1949-05-30 | |||
| US2675509A (en) * | 1949-07-26 | 1954-04-13 | Rca Corp | High-frequency response semiconductor device |
| US2647958A (en) * | 1949-10-25 | 1953-08-04 | Bell Telephone Labor Inc | Voltage and current bias of transistors |
| US2877284A (en) * | 1950-05-23 | 1959-03-10 | Rca Corp | Photovoltaic apparatus |
| US2719190A (en) * | 1950-10-27 | 1955-09-27 | Bell Telephone Labor Inc | High-efficiency translating circuit |
| DE1006169B (de) * | 1952-02-07 | 1957-04-11 | Siemes & Halske Ag | Anordnung zur Umwandlung mechanischer in elektrische Schwingungen |
| US2953730A (en) * | 1952-11-07 | 1960-09-20 | Rca Corp | High frequency semiconductor devices |
| US2734154A (en) * | 1953-07-27 | 1956-02-07 | Semiconductor devices | |
| NL190984A (no) * | 1953-10-16 | |||
| DE1047947B (de) * | 1953-11-19 | 1958-12-31 | Siemens Ag | Gleichrichtende oder verstaerkende Halbleiteranordnung mit durch ein aeusseres elektrisches und/oder magnetisches Feld veraenderlichem Widerstand |
| DE1021488B (de) * | 1954-02-19 | 1957-12-27 | Deutsche Bundespost | Halbleiter-Kristallode der Schichtenbauart |
| BE539001A (no) * | 1954-06-15 | |||
| DE976718C (de) * | 1955-01-08 | 1964-03-19 | Siemens Ag | Verfahren zum Anloeten elektrischer Anschluesse an eine Metallauflage, die auf einemim wesentlichen einkristallinen Halbleiter aufgebracht ist |
| US2987659A (en) * | 1955-02-15 | 1961-06-06 | Teszner Stanislas | Unipolar "field effect" transistor |
| US2842668A (en) * | 1955-05-25 | 1958-07-08 | Ibm | High frequency transistor oscillator |
| US2897377A (en) * | 1955-06-20 | 1959-07-28 | Rca Corp | Semiconductor surface treatments and devices made thereby |
| NL218192A (no) * | 1956-06-18 | |||
| DE1166381B (de) * | 1956-07-06 | 1964-03-26 | Siemens Ag | Verstaerkendes Halbleiterbauelement mit einer isolierten Steuerelektrode ueber einemin Sperrichtung vorgespannten pn-UEbergang und Verfahren zu seinem Herstellen |
| US2918628A (en) * | 1957-01-23 | 1959-12-22 | Otmar M Stuetzer | Semiconductor amplifier |
| DE1207508B (de) * | 1957-08-01 | 1965-12-23 | Siemens Ag | Halbleiterbauelement mit sperrfreien Kontakt-elektroden und Verfahren zum Herstellen |
| US3111611A (en) * | 1957-09-24 | 1963-11-19 | Ibm | Graded energy gap semiconductor devices |
| US3017548A (en) * | 1958-01-20 | 1962-01-16 | Bell Telephone Labor Inc | Signal translating device |
| US3298863A (en) * | 1964-05-08 | 1967-01-17 | Joseph H Mccusker | Method for fabricating thin film transistors |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US1251378A (en) * | 1917-04-12 | 1917-12-25 | Horace Hurm | Crystalline or like detector for electric waves. |
| US1745175A (en) * | 1925-10-22 | 1930-01-28 | Lilienfeld Julius Edgar | Method and apparatus for controlling electric currents |
| GB349584A (en) * | 1928-11-27 | 1931-05-26 | Dubilier Condenser Co 1925 Ltd | A new or improved electric amplifier |
| AT130102B (de) * | 1929-07-11 | 1932-11-10 | Aeg | Kontaktgleichrichter mit zwei durch eine Sperrschicht getrennten Metallelektroden. |
| US1900018A (en) * | 1928-03-28 | 1933-03-07 | Lilienfeld Julius Edgar | Device for controlling electric current |
| US1949383A (en) * | 1930-02-13 | 1934-02-27 | Ind Dev Corp | Electronic device |
| GB439457A (en) * | 1934-03-02 | 1935-12-06 | Heil Oskar | Improvements in or relating to electrical amplifiers and other control arrangements and devices |
| GB500342A (en) * | 1937-09-18 | 1939-02-07 | British Thomson Houston Co Ltd | Improvements relating to dry surface-contact electric rectifiers |
| US2173904A (en) * | 1935-03-09 | 1939-09-26 | Philips Nv | Electrode system of unsymmetrical conductivity |
| US2208455A (en) * | 1938-11-15 | 1940-07-16 | Gen Electric | Dry plate electrode system having a control electrode |
| US2402662A (en) * | 1941-05-27 | 1946-06-25 | Bell Telephone Labor Inc | Light-sensitive electric device |
| US2402661A (en) * | 1941-03-01 | 1946-06-25 | Bell Telephone Labor Inc | Alternating current rectifier |
-
0
- BE BE484779D patent/BE484779A/xx unknown
- BE BE486170D patent/BE486170A/xx unknown
- NL NL85857D patent/NL85857C/xx active
- NL NL84054D patent/NL84054C/xx active
- NL NL85856D patent/NL85856C/xx active
-
1948
- 1948-02-26 US US11168A patent/US2524034A/en not_active Expired - Lifetime
- 1948-09-10 GB GB23808/48A patent/GB694021A/en not_active Expired
- 1948-09-23 FR FR972207D patent/FR972207A/fr not_active Expired
- 1948-10-05 CH CH277131D patent/CH277131A/de unknown
- 1948-11-18 FR FR975245D patent/FR975245A/fr not_active Expired
- 1948-12-28 CH CH273525D patent/CH273525A/de unknown
-
1949
- 1949-01-11 FR FR978836D patent/FR978836A/fr not_active Expired
- 1949-01-20 DE DEP32044A patent/DE966492C/de not_active Expired
- 1949-02-25 GB GB5203/49A patent/GB694023A/en not_active Expired
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US1251378A (en) * | 1917-04-12 | 1917-12-25 | Horace Hurm | Crystalline or like detector for electric waves. |
| US1745175A (en) * | 1925-10-22 | 1930-01-28 | Lilienfeld Julius Edgar | Method and apparatus for controlling electric currents |
| US1900018A (en) * | 1928-03-28 | 1933-03-07 | Lilienfeld Julius Edgar | Device for controlling electric current |
| GB349584A (en) * | 1928-11-27 | 1931-05-26 | Dubilier Condenser Co 1925 Ltd | A new or improved electric amplifier |
| AT130102B (de) * | 1929-07-11 | 1932-11-10 | Aeg | Kontaktgleichrichter mit zwei durch eine Sperrschicht getrennten Metallelektroden. |
| US1949383A (en) * | 1930-02-13 | 1934-02-27 | Ind Dev Corp | Electronic device |
| GB439457A (en) * | 1934-03-02 | 1935-12-06 | Heil Oskar | Improvements in or relating to electrical amplifiers and other control arrangements and devices |
| US2173904A (en) * | 1935-03-09 | 1939-09-26 | Philips Nv | Electrode system of unsymmetrical conductivity |
| GB500342A (en) * | 1937-09-18 | 1939-02-07 | British Thomson Houston Co Ltd | Improvements relating to dry surface-contact electric rectifiers |
| US2208455A (en) * | 1938-11-15 | 1940-07-16 | Gen Electric | Dry plate electrode system having a control electrode |
| US2402661A (en) * | 1941-03-01 | 1946-06-25 | Bell Telephone Labor Inc | Alternating current rectifier |
| US2402662A (en) * | 1941-05-27 | 1946-06-25 | Bell Telephone Labor Inc | Light-sensitive electric device |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE977615C (de) * | 1950-09-14 | 1967-08-31 | Western Electric Co | Verfahren zur Herstellung eines fuer Signaluebertragungsvorrichtungen bestimmten Halbleiterelements |
| DE1292253B (de) * | 1959-09-26 | 1969-04-10 | Telefunken Patent | Halbleiteranordnung |
| DE1175797B (de) * | 1960-12-22 | 1964-08-13 | Standard Elektrik Lorenz Ag | Verfahren zum Herstellen von elektrischen Halb-leiterbauelementen |
| DE1212642B (de) * | 1962-05-29 | 1966-03-17 | Siemens Ag | Halbleiterbauelement, insbesondere Mesatransistor, mit zwei moeglichst kleinflaechigen Elektroden mit parallelen Kanten und Verfahren zum Herstellen |
| DE1212642C2 (de) * | 1962-05-29 | 1966-10-13 | Siemens Ag | Halbleiterbauelement, insbesondere Mesatransistor, mit zwei moeglichst kleinflaechigen Elektroden mit parallelen Kanten und Verfahren zum Herstellen |
Also Published As
| Publication number | Publication date |
|---|---|
| BE484779A (no) | |
| US2524034A (en) | 1950-10-03 |
| BE486170A (no) | |
| CH277131A (de) | 1951-08-15 |
| FR975245A (fr) | 1951-03-02 |
| NL84054C (no) | |
| NL85857C (no) | |
| GB694023A (en) | 1953-07-15 |
| GB694021A (en) | 1953-07-15 |
| FR972207A (fr) | 1951-01-26 |
| FR978836A (fr) | 1951-04-18 |
| NL85856C (no) | |
| CH273525A (de) | 1951-02-15 |
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