DE943964C - Halbleiter-Signaluebertragungseinrichtung - Google Patents

Halbleiter-Signaluebertragungseinrichtung

Info

Publication number
DE943964C
DE943964C DEW12146A DEW0012146A DE943964C DE 943964 C DE943964 C DE 943964C DE W12146 A DEW12146 A DE W12146A DE W0012146 A DEW0012146 A DE W0012146A DE 943964 C DE943964 C DE 943964C
Authority
DE
Germany
Prior art keywords
electrode
collector electrode
signal transmission
transmission device
area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DEW12146A
Other languages
German (de)
English (en)
Inventor
George Clement Dacey
Ian Munro Ross
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Inc
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Application granted granted Critical
Publication of DE943964C publication Critical patent/DE943964C/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/14—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with amplifying devices having more than three electrodes or more than two PN junctions
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/16—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/16—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices
    • H03F3/165—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices with junction-FET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/35—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar semiconductor devices with more than two PN junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
DEW12146A 1952-10-31 1953-09-19 Halbleiter-Signaluebertragungseinrichtung Expired DE943964C (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US317884A US2778885A (en) 1952-10-31 1952-10-31 Semiconductor signal translating devices

Publications (1)

Publication Number Publication Date
DE943964C true DE943964C (de) 1956-08-16

Family

ID=23235679

Family Applications (1)

Application Number Title Priority Date Filing Date
DEW12146A Expired DE943964C (de) 1952-10-31 1953-09-19 Halbleiter-Signaluebertragungseinrichtung

Country Status (7)

Country Link
US (1) US2778885A (OSRAM)
BE (1) BE523907A (OSRAM)
CH (1) CH331014A (OSRAM)
DE (1) DE943964C (OSRAM)
FR (1) FR1075316A (OSRAM)
GB (1) GB753514A (OSRAM)
NL (2) NL94119C (OSRAM)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1089072B (de) * 1958-12-10 1960-09-15 Sueddeutsche Telefon App Kabel Halbleiteranordnung zum Schalten mit teilweise negativer Widerstands-kennlinie mit einem langgestreckten Halbleiterkoerper
DE1089073B (de) * 1958-12-12 1960-09-15 Deutsche Bundespost Transistor zum Schalten mit teilweise fallender Charakteristik und einem Halbleiterkoerper mit der Zonenfolge npp n bzw. pnn p
DE1166382B (de) * 1960-04-14 1964-03-26 Siemens Ag Niederohmige Kontakt-Elektrode fuer Halbleiterbauelemente, insbesondere fuer Tunneldioden
DE1197987B (de) * 1960-01-26 1965-08-05 Fuji Electric Co Ltd Halbleiterbauelement mit Feldsteuerung fuer Schaltzwecke und Betriebsschaltungen

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2927221A (en) * 1954-01-19 1960-03-01 Clevite Corp Semiconductor devices and trigger circuits therefor
US2895058A (en) * 1954-09-23 1959-07-14 Rca Corp Semiconductor devices and systems
US2825822A (en) * 1955-08-03 1958-03-04 Sylvania Electric Prod Transistor switching circuits
US2913541A (en) * 1956-11-20 1959-11-17 Gen Electric Semiconductor wave filter
US2980831A (en) * 1957-11-21 1961-04-18 Sprague Electric Co Means for reducing surface recombination
US3010033A (en) * 1958-01-02 1961-11-21 Clevite Corp Field effect transistor
US3111590A (en) * 1958-06-05 1963-11-19 Clevite Corp Transistor structure controlled by an avalanche barrier
NL240386A (OSRAM) * 1958-06-25 1900-01-01
FR1245720A (fr) * 1959-09-30 1960-11-10 Nouvelles structures pour transistor à effet de champ
US3148344A (en) * 1961-03-24 1964-09-08 Westinghouse Electric Corp Adjustable resistance-capacitance band pass filter using integral semiconductor having two reverse biased junctions
GB1471617A (en) * 1973-06-21 1977-04-27 Sony Corp Circuits comprising a semiconductor device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2524035A (en) * 1948-02-26 1950-10-03 Bell Telphone Lab Inc Three-electrode circuit element utilizing semiconductive materials
US2569347A (en) * 1948-06-26 1951-09-25 Bell Telephone Labor Inc Circuit element utilizing semiconductive material
US2600500A (en) * 1948-09-24 1952-06-17 Bell Telephone Labor Inc Semiconductor signal translating device with controlled carrier transit times
NL79529C (OSRAM) * 1948-09-24
US2561411A (en) * 1950-03-08 1951-07-24 Bell Telephone Labor Inc Semiconductor signal translating device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1089072B (de) * 1958-12-10 1960-09-15 Sueddeutsche Telefon App Kabel Halbleiteranordnung zum Schalten mit teilweise negativer Widerstands-kennlinie mit einem langgestreckten Halbleiterkoerper
DE1089073B (de) * 1958-12-12 1960-09-15 Deutsche Bundespost Transistor zum Schalten mit teilweise fallender Charakteristik und einem Halbleiterkoerper mit der Zonenfolge npp n bzw. pnn p
DE1197987B (de) * 1960-01-26 1965-08-05 Fuji Electric Co Ltd Halbleiterbauelement mit Feldsteuerung fuer Schaltzwecke und Betriebsschaltungen
DE1166382B (de) * 1960-04-14 1964-03-26 Siemens Ag Niederohmige Kontakt-Elektrode fuer Halbleiterbauelemente, insbesondere fuer Tunneldioden

Also Published As

Publication number Publication date
CH331014A (de) 1958-06-30
BE523907A (OSRAM)
NL182022B (nl)
US2778885A (en) 1957-01-22
GB753514A (en) 1956-07-25
FR1075316A (fr) 1954-10-14
NL94119C (OSRAM)

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