DE876278C - Verfahren zur Herstellung von Sperrschichten fuer Halbleiterphotozellen und Trockengleichrichter - Google Patents
Verfahren zur Herstellung von Sperrschichten fuer Halbleiterphotozellen und TrockengleichrichterInfo
- Publication number
- DE876278C DE876278C DEA10413D DEA0010413D DE876278C DE 876278 C DE876278 C DE 876278C DE A10413 D DEA10413 D DE A10413D DE A0010413 D DEA0010413 D DE A0010413D DE 876278 C DE876278 C DE 876278C
- Authority
- DE
- Germany
- Prior art keywords
- selenium
- semiconductor
- barrier layers
- production
- photocells
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims description 10
- 230000004888 barrier function Effects 0.000 title claims description 7
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 238000000034 method Methods 0.000 title description 3
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 11
- 229910052711 selenium Inorganic materials 0.000 claims description 11
- 239000011669 selenium Substances 0.000 claims description 11
- CXMYWOCYTPKBPP-UHFFFAOYSA-N 3-(3-hydroxypropylamino)propan-1-ol Chemical compound OCCCNCCCO CXMYWOCYTPKBPP-UHFFFAOYSA-N 0.000 claims description 2
- QGJOPFRUJISHPQ-NJFSPNSNSA-N carbon disulfide-14c Chemical compound S=[14C]=S QGJOPFRUJISHPQ-NJFSPNSNSA-N 0.000 claims description 2
- 239000002904 solvent Substances 0.000 claims description 2
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/01—Manufacture or treatment
- H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
- H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
- H10D48/045—Treatment of the surface of the selenium or tellurium layer after having been made conductive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02425—Conductive materials, e.g. metallic silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/01—Manufacture or treatment
- H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
- H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
- H10D48/0431—Application of the selenium or tellurium to the foundation plate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/01—Manufacture or treatment
- H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
- H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
- H10D48/046—Provision of discrete insulating layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEA10413D DE876278C (de) | 1938-10-04 | 1938-10-04 | Verfahren zur Herstellung von Sperrschichten fuer Halbleiterphotozellen und Trockengleichrichter |
| DEL95748D DE756025C (de) | 1938-10-04 | 1938-10-04 | Verfahren zur Herstellung einer Sperrschicht auf der Halbleiterschicht von Trockengleichrichtern |
| NL95275A NL54474C (enrdf_load_stackoverflow) | 1938-10-04 | 1939-09-20 | |
| FR886370D FR886370A (fr) | 1938-10-04 | 1942-10-05 | Procédé de fabrication de couches de sélénium minces, notamment pour les cellules photoélectriques et les redresseurs secs |
| FR886371D FR886371A (fr) | 1938-10-04 | 1942-10-05 | Procédé d'obtention d'une couche d'arrêt pour redresseurs secs |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEA10413D DE876278C (de) | 1938-10-04 | 1938-10-04 | Verfahren zur Herstellung von Sperrschichten fuer Halbleiterphotozellen und Trockengleichrichter |
| DEL95748D DE756025C (de) | 1938-10-04 | 1938-10-04 | Verfahren zur Herstellung einer Sperrschicht auf der Halbleiterschicht von Trockengleichrichtern |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE876278C true DE876278C (de) | 1953-05-11 |
Family
ID=25963088
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEA10413D Expired DE876278C (de) | 1938-10-04 | 1938-10-04 | Verfahren zur Herstellung von Sperrschichten fuer Halbleiterphotozellen und Trockengleichrichter |
| DEL95748D Expired DE756025C (de) | 1938-10-04 | 1938-10-04 | Verfahren zur Herstellung einer Sperrschicht auf der Halbleiterschicht von Trockengleichrichtern |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEL95748D Expired DE756025C (de) | 1938-10-04 | 1938-10-04 | Verfahren zur Herstellung einer Sperrschicht auf der Halbleiterschicht von Trockengleichrichtern |
Country Status (3)
| Country | Link |
|---|---|
| DE (2) | DE876278C (enrdf_load_stackoverflow) |
| FR (2) | FR886371A (enrdf_load_stackoverflow) |
| NL (1) | NL54474C (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1032669B (de) * | 1953-03-17 | 1958-06-19 | Haloid Co | Lichtempfindliches Material zur Erzeugung eines latenten Ladungsbildes |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE519162C (de) * | 1928-11-01 | 1931-02-25 | Sueddeutsche Telefon App Kabel | Elektrisches Ventil mit zwischen Elektroden angeordneter fester Ventilschicht |
| US1994632A (en) * | 1933-05-11 | 1935-03-19 | Bell Telephone Labor Inc | Asymmetric conductor |
| FR769645A (fr) * | 1933-05-26 | 1934-08-29 | Thomson Houston Comp Francaise | Perfectionnements aux redresseurs à contact |
-
1938
- 1938-10-04 DE DEA10413D patent/DE876278C/de not_active Expired
- 1938-10-04 DE DEL95748D patent/DE756025C/de not_active Expired
-
1939
- 1939-09-20 NL NL95275A patent/NL54474C/xx active
-
1942
- 1942-10-05 FR FR886371D patent/FR886371A/fr not_active Expired
- 1942-10-05 FR FR886370D patent/FR886370A/fr not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1032669B (de) * | 1953-03-17 | 1958-06-19 | Haloid Co | Lichtempfindliches Material zur Erzeugung eines latenten Ladungsbildes |
Also Published As
| Publication number | Publication date |
|---|---|
| DE756025C (de) | 1952-06-16 |
| FR886371A (fr) | 1943-10-13 |
| FR886370A (fr) | 1943-10-13 |
| NL54474C (enrdf_load_stackoverflow) | 1943-05-15 |
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