FR886371A - Procédé d'obtention d'une couche d'arrêt pour redresseurs secs - Google Patents

Procédé d'obtention d'une couche d'arrêt pour redresseurs secs

Info

Publication number
FR886371A
FR886371A FR886371DA FR886371A FR 886371 A FR886371 A FR 886371A FR 886371D A FR886371D A FR 886371DA FR 886371 A FR886371 A FR 886371A
Authority
FR
France
Prior art keywords
straighteners
dry
obtaining
barrier layer
barrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Licentia Patent Verwaltungs GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Application granted granted Critical
Publication of FR886371A publication Critical patent/FR886371A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
    • H10D48/045—Treatment of the surface of the selenium or tellurium layer after having been made conductive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
    • H10D48/0431—Application of the selenium or tellurium to the foundation plate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
    • H10D48/046—Provision of discrete insulating layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Photovoltaic Devices (AREA)
FR886371D 1938-10-04 1942-10-05 Procédé d'obtention d'une couche d'arrêt pour redresseurs secs Expired FR886371A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DEA10413D DE876278C (de) 1938-10-04 1938-10-04 Verfahren zur Herstellung von Sperrschichten fuer Halbleiterphotozellen und Trockengleichrichter
DEL95748D DE756025C (de) 1938-10-04 1938-10-04 Verfahren zur Herstellung einer Sperrschicht auf der Halbleiterschicht von Trockengleichrichtern

Publications (1)

Publication Number Publication Date
FR886371A true FR886371A (fr) 1943-10-13

Family

ID=25963088

Family Applications (2)

Application Number Title Priority Date Filing Date
FR886371D Expired FR886371A (fr) 1938-10-04 1942-10-05 Procédé d'obtention d'une couche d'arrêt pour redresseurs secs
FR886370D Expired FR886370A (fr) 1938-10-04 1942-10-05 Procédé de fabrication de couches de sélénium minces, notamment pour les cellules photoélectriques et les redresseurs secs

Family Applications After (1)

Application Number Title Priority Date Filing Date
FR886370D Expired FR886370A (fr) 1938-10-04 1942-10-05 Procédé de fabrication de couches de sélénium minces, notamment pour les cellules photoélectriques et les redresseurs secs

Country Status (3)

Country Link
DE (2) DE876278C (enrdf_load_stackoverflow)
FR (2) FR886371A (enrdf_load_stackoverflow)
NL (1) NL54474C (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2901348A (en) * 1953-03-17 1959-08-25 Haloid Xerox Inc Radiation sensitive photoconductive member

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE519162C (de) * 1928-11-01 1931-02-25 Sueddeutsche Telefon App Kabel Elektrisches Ventil mit zwischen Elektroden angeordneter fester Ventilschicht
US1994632A (en) * 1933-05-11 1935-03-19 Bell Telephone Labor Inc Asymmetric conductor
FR769645A (fr) * 1933-05-26 1934-08-29 Thomson Houston Comp Francaise Perfectionnements aux redresseurs à contact

Also Published As

Publication number Publication date
DE876278C (de) 1953-05-11
DE756025C (de) 1952-06-16
FR886370A (fr) 1943-10-13
NL54474C (enrdf_load_stackoverflow) 1943-05-15

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