DE69940550D1 - Vorrichtung und verfahren zum messen einer eigenschaft einer in einer mehrschichtstruktur befindlichen schicht - Google Patents

Vorrichtung und verfahren zum messen einer eigenschaft einer in einer mehrschichtstruktur befindlichen schicht

Info

Publication number
DE69940550D1
DE69940550D1 DE69940550T DE69940550T DE69940550D1 DE 69940550 D1 DE69940550 D1 DE 69940550D1 DE 69940550 T DE69940550 T DE 69940550T DE 69940550 T DE69940550 T DE 69940550T DE 69940550 D1 DE69940550 D1 DE 69940550D1
Authority
DE
Germany
Prior art keywords
property
measuring
layer
multilayer structure
multilayer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69940550T
Other languages
English (en)
Inventor
Peter G Borden
Jiping Li
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of DE69940550D1 publication Critical patent/DE69940550D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/1717—Systems in which incident light is modified in accordance with the properties of the material investigated with a modulation of one or more physical properties of the sample during the optical investigation, e.g. electro-reflectance

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Or Analyzing Materials Using Thermal Means (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
DE69940550T 1998-06-10 1999-06-09 Vorrichtung und verfahren zum messen einer eigenschaft einer in einer mehrschichtstruktur befindlichen schicht Expired - Lifetime DE69940550D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/095,805 US6054868A (en) 1998-06-10 1998-06-10 Apparatus and method for measuring a property of a layer in a multilayered structure
PCT/US1999/012999 WO1999064842A1 (en) 1998-06-10 1999-06-09 An apparatus and method for measuring a property of a layer in a multilayered structure

Publications (1)

Publication Number Publication Date
DE69940550D1 true DE69940550D1 (de) 2009-04-23

Family

ID=22253662

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69940550T Expired - Lifetime DE69940550D1 (de) 1998-06-10 1999-06-09 Vorrichtung und verfahren zum messen einer eigenschaft einer in einer mehrschichtstruktur befindlichen schicht

Country Status (6)

Country Link
US (1) US6054868A (de)
EP (1) EP1101098B1 (de)
JP (1) JP2002517750A (de)
AU (1) AU4430899A (de)
DE (1) DE69940550D1 (de)
WO (1) WO1999064842A1 (de)

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US6891627B1 (en) 2000-09-20 2005-05-10 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension and overlay of a specimen
DE10056768B4 (de) * 2000-11-14 2004-08-26 Stephan la Barré Verfahren und Vorrichtung zur Messung von Eigenschaften einer Probe mit Meßsignal-Modulation
US6911349B2 (en) * 2001-02-16 2005-06-28 Boxer Cross Inc. Evaluating sidewall coverage in a semiconductor wafer
US6812717B2 (en) * 2001-03-05 2004-11-02 Boxer Cross, Inc Use of a coefficient of a power curve to evaluate a semiconductor wafer
EP1262765A1 (de) * 2001-05-28 2002-12-04 Solectron GmbH Verfahren und Vorrichtung zur Detektion von defekten Leiterplattenrohlingen
US6541288B1 (en) 2001-09-07 2003-04-01 The United States Of America As Represented By The National Security Agency Method of determining semiconductor laser facet reflectivity after facet reflectance modification
US6940592B2 (en) * 2001-10-09 2005-09-06 Applied Materials, Inc. Calibration as well as measurement on the same workpiece during fabrication
US6971791B2 (en) * 2002-03-01 2005-12-06 Boxer Cross, Inc Identifying defects in a conductive structure of a wafer, based on heat transfer therethrough
US6958814B2 (en) 2002-03-01 2005-10-25 Applied Materials, Inc. Apparatus and method for measuring a property of a layer in a multilayered structure
US6787375B2 (en) * 2002-05-13 2004-09-07 Taiwan Semiconductor Manufacturing Co., Ltd Microelectronic fabrication die electrical test method providing enhanced microelectronic fabrication die electrical test efficiency
US6786637B2 (en) * 2002-09-13 2004-09-07 The University Of Bristol Temperature measurement of an electronic device
US7048434B2 (en) * 2002-09-17 2006-05-23 Intel Corporation Thermal analysis and characterization of layers and multiple layer structures
US6963393B2 (en) * 2002-09-23 2005-11-08 Applied Materials, Inc. Measurement of lateral diffusion of diffused layers
US6878559B2 (en) * 2002-09-23 2005-04-12 Applied Materials, Inc. Measurement of lateral diffusion of diffused layers
US6842661B2 (en) * 2002-09-30 2005-01-11 Advanced Micro Devices, Inc. Process control at an interconnect level
US6809542B2 (en) 2002-10-03 2004-10-26 Mti Instruments Inc. Wafer resistance measurement apparatus and method using capacitively coupled AC excitation signal
US20070024871A1 (en) * 2002-12-13 2007-02-01 Alexei Maznev Method and apparatus for measuring thickness of thin films via transient thermoreflectance
US6995575B2 (en) * 2003-04-30 2006-02-07 The Boeing Company Apparatus and methods for measuring resistance of conductive layers
US20040253751A1 (en) * 2003-06-16 2004-12-16 Alex Salnik Photothermal ultra-shallow junction monitoring system with UV pump
US6822472B1 (en) 2003-06-27 2004-11-23 International Business Machines Corporation Detection of hard mask remaining on a surface of an insulating layer
EP1668690B1 (de) * 2003-09-16 2017-11-08 Invisible Ltd Analysator für elektrische defekte zur erkennung aller defekte in pcb/mcm
US7026175B2 (en) * 2004-03-29 2006-04-11 Applied Materials, Inc. High throughput measurement of via defects in interconnects
US7379185B2 (en) * 2004-11-01 2008-05-27 Applied Materials, Inc. Evaluation of openings in a dielectric layer
JP2006234635A (ja) * 2005-02-25 2006-09-07 Three M Innovative Properties Co フレキシブルプリント配線板の接合部の非破壊検査方法
US8362431B2 (en) * 2005-03-15 2013-01-29 Mount Holyoke College Methods of thermoreflectance thermography
US7182510B2 (en) * 2005-04-04 2007-02-27 David Gerard Cahill Apparatus and method for measuring thermal conductivity
JP2009500851A (ja) 2005-07-05 2009-01-08 マットソン テクノロジー インコーポレイテッド 半導体ウェハの光学的特性を求めるための方法およびシステム
JP4831814B2 (ja) * 2006-02-23 2011-12-07 三菱重工業株式会社 透明導電膜評価装置及び透明導電膜の評価方法
US7543981B2 (en) * 2006-06-29 2009-06-09 Mattson Technology, Inc. Methods for determining wafer temperature
US7552018B1 (en) 2007-02-12 2009-06-23 The United States Of America As Represented By The Secretary Of The Navy Method for quickly quantifying the resistance of a thin film as a function of frequency
US7851234B2 (en) 2007-11-29 2010-12-14 Taiwan Semiconductor Manufacturing Co., Ltd. System and method for enhanced control of copper trench sheet resistance uniformity
JP4427594B2 (ja) 2008-08-11 2010-03-10 三菱重工業株式会社 抵抗率検査方法及びその装置
US9066028B1 (en) 2010-01-08 2015-06-23 The United States Of America As Represented By The Administator Of The National Aeronautics And Space Administration Methods and systems for measurement and estimation of normalized contrast in infrared thermography
JP5637204B2 (ja) * 2012-12-10 2014-12-10 トヨタ自動車株式会社 シリコンカーバイトウエハの検査方法及び検査装置
US9347898B1 (en) 2013-08-08 2016-05-24 The United States Of America As Represented By The Secretary Of The Army Measuring thermal properties of layered structure in situ
US9772297B2 (en) 2014-02-12 2017-09-26 Kla-Tencor Corporation Apparatus and methods for combined brightfield, darkfield, and photothermal inspection
JP6354350B2 (ja) * 2014-06-05 2018-07-11 株式会社ジェイテクト 光学非破壊検査方法及び光学非破壊検査装置
US10578569B2 (en) 2016-11-07 2020-03-03 Battelle Energy Alliance, Llc Apparatus for determining a thermal conductivity and a thermal diffusivity of a material, and related methods
US10209314B2 (en) 2016-11-21 2019-02-19 Battelle Energy Alliance, Llc Systems and methods for estimation and prediction of battery health and performance
US12092595B2 (en) 2018-08-28 2024-09-17 University Of Virginia Patent Foundation Steady-state thermo-reflectance method and system to measure thermal conductivity

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Also Published As

Publication number Publication date
AU4430899A (en) 1999-12-30
JP2002517750A (ja) 2002-06-18
EP1101098B1 (de) 2009-03-11
WO1999064842A1 (en) 1999-12-16
US6054868A (en) 2000-04-25
EP1101098A1 (de) 2001-05-23

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