DE69837033D1 - Gerät und Verfahren zur Messung der Tiefe einer vertieften Grenzschicht - Google Patents
Gerät und Verfahren zur Messung der Tiefe einer vertieften GrenzschichtInfo
- Publication number
- DE69837033D1 DE69837033D1 DE69837033T DE69837033T DE69837033D1 DE 69837033 D1 DE69837033 D1 DE 69837033D1 DE 69837033 T DE69837033 T DE 69837033T DE 69837033 T DE69837033 T DE 69837033T DE 69837033 D1 DE69837033 D1 DE 69837033D1
- Authority
- DE
- Germany
- Prior art keywords
- depth
- measuring
- boundary layer
- recessed boundary
- recessed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C5/00—Measuring height; Measuring distances transverse to line of sight; Levelling between separated points; Surveyors' levels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/66181—Conductor-insulator-semiconductor capacitors, e.g. trench capacitors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/265—Contactless testing
- G01R31/2656—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Length Measuring Devices By Optical Means (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/004,074 US6124141A (en) | 1998-01-07 | 1998-01-07 | Non-destructive method and device for measuring the depth of a buried interface |
US4074 | 1998-01-07 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69837033D1 true DE69837033D1 (de) | 2007-03-22 |
DE69837033T2 DE69837033T2 (de) | 2007-08-09 |
Family
ID=21709010
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69837033T Expired - Lifetime DE69837033T2 (de) | 1998-01-07 | 1998-12-15 | Gerät und Verfahren zur Messung der Tiefe einer vertieften Grenzschicht |
Country Status (7)
Country | Link |
---|---|
US (1) | US6124141A (de) |
EP (1) | EP0929094B1 (de) |
JP (1) | JP3072734B2 (de) |
KR (1) | KR100393387B1 (de) |
CN (1) | CN1141737C (de) |
DE (1) | DE69837033T2 (de) |
TW (1) | TW392271B (de) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000205833A (ja) * | 1999-01-06 | 2000-07-28 | Internatl Business Mach Corp <Ibm> | 陥凹材料の深さを測定するための非破壊的方法および装置 |
US6486675B1 (en) * | 2000-09-29 | 2002-11-26 | Infineon Technologies Ag | In-situ method for measuring the endpoint of a resist recess etch process |
US6708559B2 (en) | 2001-09-28 | 2004-03-23 | Infineon Technologies Ag | Direct, non-destructive measurement of recess depth in a wafer |
US7869057B2 (en) | 2002-09-09 | 2011-01-11 | Zygo Corporation | Multiple-angle multiple-wavelength interferometer using high-NA imaging and spectral analysis |
US7139081B2 (en) | 2002-09-09 | 2006-11-21 | Zygo Corporation | Interferometry method for ellipsometry, reflectometry, and scatterometry measurements, including characterization of thin film structures |
US7324214B2 (en) | 2003-03-06 | 2008-01-29 | Zygo Corporation | Interferometer and method for measuring characteristics of optically unresolved surface features |
WO2004079294A2 (en) * | 2003-03-06 | 2004-09-16 | Zygo Corporation | Characterizing and profiling complex surface structures using scanning interferometry |
US7106454B2 (en) | 2003-03-06 | 2006-09-12 | Zygo Corporation | Profiling complex surface structures using scanning interferometry |
CN1784587B (zh) * | 2003-03-06 | 2010-09-08 | 齐戈股份有限公司 | 使用扫描干涉测量形成复杂表面结构的轮廓 |
US7271918B2 (en) | 2003-03-06 | 2007-09-18 | Zygo Corporation | Profiling complex surface structures using scanning interferometry |
FR2852389B1 (fr) * | 2003-03-12 | 2005-05-13 | Commissariat Energie Atomique | Procede de mesure d'objets tridimensionnels par ombroscopie optique a une seule vue |
TWI358614B (en) | 2003-09-15 | 2012-02-21 | Zygo Corp | Triangulation methods and systems for profiling su |
TWI335417B (en) | 2003-10-27 | 2011-01-01 | Zygo Corp | Method and apparatus for thin film measurement |
US7616323B2 (en) | 2005-01-20 | 2009-11-10 | Zygo Corporation | Interferometer with multiple modes of operation for determining characteristics of an object surface |
US7884947B2 (en) | 2005-01-20 | 2011-02-08 | Zygo Corporation | Interferometry for determining characteristics of an object surface, with spatially coherent illumination |
US7321431B2 (en) | 2005-05-19 | 2008-01-22 | Zygo Corporation | Method and system for analyzing low-coherence interferometry signals for information about thin film structures |
GB2427474B8 (en) * | 2005-06-20 | 2009-04-22 | Radiodetection Ltd | A method of and apparatus for determining if a buried current carrying conductor is buried above a predetermined minimum depth |
US7226339B2 (en) | 2005-08-22 | 2007-06-05 | Applied Materials, Inc. | Spectrum based endpointing for chemical mechanical polishing |
KR101593927B1 (ko) * | 2005-08-22 | 2016-02-15 | 어플라이드 머티어리얼스, 인코포레이티드 | 화학적 기계적 폴리싱의 스펙트럼 기반 모니터링을 위한 장치 및 방법 |
JP5502491B2 (ja) | 2006-12-22 | 2014-05-28 | ザイゴ コーポレーション | 表面特徴の特性測定のための装置および方法 |
US7889355B2 (en) | 2007-01-31 | 2011-02-15 | Zygo Corporation | Interferometry for lateral metrology |
US8072611B2 (en) | 2007-10-12 | 2011-12-06 | Zygo Corporation | Interferometric analysis of under-resolved features |
US7978337B2 (en) | 2007-11-13 | 2011-07-12 | Zygo Corporation | Interferometer utilizing polarization scanning |
KR101254161B1 (ko) | 2007-12-14 | 2013-04-18 | 지고 코포레이션 | 주사 간섭계를 사용해서 표면 구조를 분석하는 방법 및 장치 |
US8004688B2 (en) | 2008-11-26 | 2011-08-23 | Zygo Corporation | Scan error correction in low coherence scanning interferometry |
US8115932B2 (en) * | 2009-05-28 | 2012-02-14 | Corning Incorporated | Methods and apparatus for measuring ion implant dose |
TWI408363B (zh) * | 2010-01-08 | 2013-09-11 | Ind Tech Res Inst | 通孔結構之測量系統和方法 |
CN103389066B (zh) * | 2013-08-08 | 2015-10-28 | 华南理工大学建筑设计研究院 | 一种动态监测建筑物竖向位移的方法 |
FR3037401B1 (fr) * | 2015-06-15 | 2017-06-23 | Commissariat Energie Atomique | Caracterisation d'un echantillon par decomposition en base de materiaux. |
KR102174774B1 (ko) | 2019-11-15 | 2020-11-05 | 한국건설기술연구원 | 열화상을 이용한 교량받침부의 앵커볼트 매립깊이 측정방법 및 측정장치 |
KR102312192B1 (ko) | 2020-09-24 | 2021-10-14 | (주)에프비지코리아 | 맨홀 뚜껑 모니터링 장치 및 시스템 |
KR102184988B1 (ko) | 2020-10-14 | 2020-12-01 | 한국건설기술연구원 | 초음파를 이용한 앵커볼트의 매립깊이 측정장치 및 측정방법 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4555767A (en) * | 1982-05-27 | 1985-11-26 | International Business Machines Corporation | Method and apparatus for measuring thickness of epitaxial layer by infrared reflectance |
US5087121A (en) * | 1987-12-01 | 1992-02-11 | Canon Kabushiki Kaisha | Depth/height measuring device |
JPH0223617A (ja) * | 1988-07-13 | 1990-01-25 | Mitsubishi Electric Corp | 半導体基板ウェハの溝形成方法 |
US4975581A (en) * | 1989-06-21 | 1990-12-04 | University Of New Mexico | Method of and apparatus for determining the similarity of a biological analyte from a model constructed from known biological fluids |
EP0420113B1 (de) * | 1989-09-25 | 1995-08-23 | Mitsubishi Denki Kabushiki Kaisha | Apparat und Verfahren für die Ausmessung von dünnen mehrschichtigen Lagen |
US5229304A (en) * | 1992-05-04 | 1993-07-20 | At&T Bell Laboratories | Method for manufacturing a semiconductor device, including optical inspection |
US5392118A (en) * | 1992-05-13 | 1995-02-21 | International Business Machines Corporation | Method for measuring a trench depth parameter of a material |
JPH074922A (ja) * | 1993-06-21 | 1995-01-10 | Jasco Corp | 半導体多層薄膜膜厚測定装置およびその測定方法 |
JP2840181B2 (ja) * | 1993-08-20 | 1998-12-24 | 大日本スクリーン製造株式会社 | 多層膜試料の膜厚測定方法 |
US5627092A (en) * | 1994-09-26 | 1997-05-06 | Siemens Aktiengesellschaft | Deep trench dram process on SOI for low leakage DRAM cell |
US5618751A (en) * | 1996-05-23 | 1997-04-08 | International Business Machines Corporation | Method of making single-step trenches using resist fill and recess |
-
1998
- 1998-01-07 US US09/004,074 patent/US6124141A/en not_active Expired - Fee Related
- 1998-07-17 TW TW087111639A patent/TW392271B/zh not_active IP Right Cessation
- 1998-12-15 EP EP98310258A patent/EP0929094B1/de not_active Expired - Lifetime
- 1998-12-15 DE DE69837033T patent/DE69837033T2/de not_active Expired - Lifetime
-
1999
- 1999-01-06 JP JP11001299A patent/JP3072734B2/ja not_active Expired - Fee Related
- 1999-01-06 CN CNB991009150A patent/CN1141737C/zh not_active Expired - Fee Related
- 1999-01-07 KR KR10-1999-0000148A patent/KR100393387B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0929094A3 (de) | 2000-12-27 |
TW392271B (en) | 2000-06-01 |
JP3072734B2 (ja) | 2000-08-07 |
EP0929094A2 (de) | 1999-07-14 |
CN1141737C (zh) | 2004-03-10 |
KR100393387B1 (ko) | 2003-08-02 |
DE69837033T2 (de) | 2007-08-09 |
EP0929094B1 (de) | 2007-02-07 |
KR19990067766A (ko) | 1999-08-25 |
US6124141A (en) | 2000-09-26 |
CN1224835A (zh) | 1999-08-04 |
JPH11260876A (ja) | 1999-09-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8320 | Willingness to grant licences declared (paragraph 23) |