DE69939326D1 - Kammerschutzauskleidung für halbleiterbehandlungskammern - Google Patents

Kammerschutzauskleidung für halbleiterbehandlungskammern

Info

Publication number
DE69939326D1
DE69939326D1 DE69939326T DE69939326T DE69939326D1 DE 69939326 D1 DE69939326 D1 DE 69939326D1 DE 69939326 T DE69939326 T DE 69939326T DE 69939326 T DE69939326 T DE 69939326T DE 69939326 D1 DE69939326 D1 DE 69939326D1
Authority
DE
Germany
Prior art keywords
protective clothing
treatment chambers
semiconductor treatment
chamber protective
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69939326T
Other languages
English (en)
Inventor
Alan M Schoepp
William M Denty
Michael Barnes
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Application granted granted Critical
Publication of DE69939326D1 publication Critical patent/DE69939326D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10S156/916—Differential etching apparatus including chamber cleaning means or shield for preventing deposits
DE69939326T 1998-09-30 1999-09-28 Kammerschutzauskleidung für halbleiterbehandlungskammern Expired - Lifetime DE69939326D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/163,722 US6170429B1 (en) 1998-09-30 1998-09-30 Chamber liner for semiconductor process chambers
PCT/US1999/022488 WO2000019495A2 (en) 1998-09-30 1999-09-28 Chamber liner for semiconductor process chambers

Publications (1)

Publication Number Publication Date
DE69939326D1 true DE69939326D1 (de) 2008-09-25

Family

ID=22591293

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69939326T Expired - Lifetime DE69939326D1 (de) 1998-09-30 1999-09-28 Kammerschutzauskleidung für halbleiterbehandlungskammern

Country Status (9)

Country Link
US (2) US6170429B1 (de)
EP (1) EP1125317B1 (de)
JP (1) JP2003505855A (de)
KR (1) KR100463070B1 (de)
CN (1) CN1152414C (de)
AU (1) AU1198800A (de)
DE (1) DE69939326D1 (de)
TW (1) TW420847B (de)
WO (1) WO2000019495A2 (de)

Families Citing this family (164)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010062209A (ko) * 1999-12-10 2001-07-07 히가시 데쓰로 고내식성 막이 내부에 형성된 챔버를 구비하는 처리 장치
EP1313890B1 (de) * 2000-04-06 2006-10-11 ASM America, Inc. Sperrschicht für glasartige werkstoffe
US7011039B1 (en) * 2000-07-07 2006-03-14 Applied Materials, Inc. Multi-purpose processing chamber with removable chamber liner
US20020038791A1 (en) * 2000-10-03 2002-04-04 Tomohiro Okumura Plasma processing method and apparatus
JP4120561B2 (ja) * 2000-10-03 2008-07-16 松下電器産業株式会社 プラズマ処理方法およびプラズマ処理装置
US6830653B2 (en) * 2000-10-03 2004-12-14 Matsushita Electric Industrial Co., Ltd. Plasma processing method and apparatus
US6475336B1 (en) * 2000-10-06 2002-11-05 Lam Research Corporation Electrostatically clamped edge ring for plasma processing
JP2002151473A (ja) * 2000-11-13 2002-05-24 Tokyo Electron Ltd プラズマ処理装置及びその組立方法
US6554954B2 (en) * 2001-04-03 2003-04-29 Applied Materials Inc. Conductive collar surrounding semiconductor workpiece in plasma chamber
US20030019428A1 (en) * 2001-04-28 2003-01-30 Applied Materials, Inc. Chemical vapor deposition chamber
US6974523B2 (en) * 2001-05-16 2005-12-13 Lam Research Corporation Hollow anode plasma reactor and method
KR20020095324A (ko) * 2001-06-14 2002-12-26 삼성전자 주식회사 고주파 파워를 이용하는 반도체장치 제조설비
KR100422446B1 (ko) * 2001-07-12 2004-03-12 삼성전자주식회사 건식식각장치의 이그저스트링
JP2005527965A (ja) * 2001-08-28 2005-09-15 ハイニックス セミコンダクター マニュファクチュアリング アメリカ インコーポレイテッド プラズマチャンバ用チャンバシールド
US7479304B2 (en) * 2002-02-14 2009-01-20 Applied Materials, Inc. Gas distribution plate fabricated from a solid yttrium oxide-comprising substrate
US8067067B2 (en) * 2002-02-14 2011-11-29 Applied Materials, Inc. Clean, dense yttrium oxide coating protecting semiconductor processing apparatus
US20080213496A1 (en) * 2002-02-14 2008-09-04 Applied Materials, Inc. Method of coating semiconductor processing apparatus with protective yttrium-containing coatings
US6776873B1 (en) * 2002-02-14 2004-08-17 Jennifer Y Sun Yttrium oxide based surface coating for semiconductor IC processing vacuum chambers
US6613587B1 (en) * 2002-04-11 2003-09-02 Micron Technology, Inc. Method of replacing at least a portion of a semiconductor substrate deposition chamber liner
US6825051B2 (en) * 2002-05-17 2004-11-30 Asm America, Inc. Plasma etch resistant coating and process
US6798519B2 (en) 2002-09-30 2004-09-28 Tokyo Electron Limited Method and apparatus for an improved optical window deposition shield in a plasma processing system
US7204912B2 (en) * 2002-09-30 2007-04-17 Tokyo Electron Limited Method and apparatus for an improved bellows shield in a plasma processing system
US7166200B2 (en) * 2002-09-30 2007-01-23 Tokyo Electron Limited Method and apparatus for an improved upper electrode plate in a plasma processing system
US7147749B2 (en) * 2002-09-30 2006-12-12 Tokyo Electron Limited Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system
US6837966B2 (en) * 2002-09-30 2005-01-04 Tokyo Electron Limeted Method and apparatus for an improved baffle plate in a plasma processing system
US7166166B2 (en) 2002-09-30 2007-01-23 Tokyo Electron Limited Method and apparatus for an improved baffle plate in a plasma processing system
US7137353B2 (en) * 2002-09-30 2006-11-21 Tokyo Electron Limited Method and apparatus for an improved deposition shield in a plasma processing system
US7780786B2 (en) * 2002-11-28 2010-08-24 Tokyo Electron Limited Internal member of a plasma processing vessel
WO2004095529A2 (en) * 2003-03-21 2004-11-04 Tokyo Electron Limited Method and apparatus for reducing substrate backside deposition during processing
WO2004095530A2 (en) 2003-03-31 2004-11-04 Tokyo Electron Limited Adjoining adjacent coatings on an element
WO2004095532A2 (en) * 2003-03-31 2004-11-04 Tokyo Electron Limited A barrier layer for a processing element and a method of forming the same
US7083702B2 (en) * 2003-06-12 2006-08-01 Applied Materials, Inc. RF current return path for a large area substrate plasma reactor
JP4399206B2 (ja) * 2003-08-06 2010-01-13 株式会社アルバック 薄膜製造装置
US7682454B2 (en) * 2003-08-07 2010-03-23 Sundew Technologies, Llc Perimeter partition-valve with protected seals and associated small size process chambers and multiple chamber systems
US6974781B2 (en) * 2003-10-20 2005-12-13 Asm International N.V. Reactor precoating for reduced stress and uniform CVD
US7910218B2 (en) 2003-10-22 2011-03-22 Applied Materials, Inc. Cleaning and refurbishing chamber components having metal coatings
US7645341B2 (en) * 2003-12-23 2010-01-12 Lam Research Corporation Showerhead electrode assembly for plasma processing apparatuses
US20060081337A1 (en) * 2004-03-12 2006-04-20 Shinji Himori Capacitive coupling plasma processing apparatus
US8236105B2 (en) * 2004-04-08 2012-08-07 Applied Materials, Inc. Apparatus for controlling gas flow in a semiconductor substrate processing chamber
US8540843B2 (en) * 2004-06-30 2013-09-24 Lam Research Corporation Plasma chamber top piece assembly
US7670436B2 (en) 2004-11-03 2010-03-02 Applied Materials, Inc. Support ring assembly
US7552521B2 (en) * 2004-12-08 2009-06-30 Tokyo Electron Limited Method and apparatus for improved baffle plate
US7601242B2 (en) * 2005-01-11 2009-10-13 Tokyo Electron Limited Plasma processing system and baffle assembly for use in plasma processing system
US7430986B2 (en) 2005-03-18 2008-10-07 Lam Research Corporation Plasma confinement ring assemblies having reduced polymer deposition characteristics
US20060225654A1 (en) * 2005-03-29 2006-10-12 Fink Steven T Disposable plasma reactor materials and methods
US8617672B2 (en) 2005-07-13 2013-12-31 Applied Materials, Inc. Localized surface annealing of components for substrate processing chambers
US7762114B2 (en) * 2005-09-09 2010-07-27 Applied Materials, Inc. Flow-formed chamber component having a textured surface
US9127362B2 (en) * 2005-10-31 2015-09-08 Applied Materials, Inc. Process kit and target for substrate processing chamber
US8647484B2 (en) * 2005-11-25 2014-02-11 Applied Materials, Inc. Target for sputtering chamber
US7417733B2 (en) * 2006-02-08 2008-08-26 Lam Research Corporation Chamber particle detection system
US20070283884A1 (en) * 2006-05-30 2007-12-13 Applied Materials, Inc. Ring assembly for substrate processing chamber
CN101165868B (zh) * 2006-10-20 2010-05-12 北京北方微电子基地设备工艺研究中心有限责任公司 晶片处理室的内衬及包含该内衬的晶片处理室
CN101207003B (zh) * 2006-12-22 2010-10-06 北京北方微电子基地设备工艺研究中心有限责任公司 晶片处理室的内衬及包含该内衬的晶片处理室
US7981262B2 (en) * 2007-01-29 2011-07-19 Applied Materials, Inc. Process kit for substrate processing chamber
US10622194B2 (en) 2007-04-27 2020-04-14 Applied Materials, Inc. Bulk sintered solid solution ceramic which exhibits fracture toughness and halogen plasma resistance
US10242888B2 (en) 2007-04-27 2019-03-26 Applied Materials, Inc. Semiconductor processing apparatus with a ceramic-comprising surface which exhibits fracture toughness and halogen plasma resistance
US7874726B2 (en) * 2007-05-24 2011-01-25 Asm America, Inc. Thermocouple
US7942969B2 (en) 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
US8034410B2 (en) 2007-07-17 2011-10-11 Asm International N.V. Protective inserts to line holes in parts for semiconductor process equipment
US9184072B2 (en) * 2007-07-27 2015-11-10 Mattson Technology, Inc. Advanced multi-workpiece processing chamber
US8367227B2 (en) * 2007-08-02 2013-02-05 Applied Materials, Inc. Plasma-resistant ceramics with controlled electrical resistivity
US20090052498A1 (en) * 2007-08-24 2009-02-26 Asm America, Inc. Thermocouple
CN101383266B (zh) * 2007-09-03 2011-08-17 北京北方微电子基地设备工艺研究中心有限责任公司 反应腔室
US7807222B2 (en) * 2007-09-17 2010-10-05 Asm International N.V. Semiconductor processing parts having apertures with deposited coatings and methods for forming the same
US20090084317A1 (en) * 2007-09-28 2009-04-02 Applied Materials, Inc. Atomic layer deposition chamber and components
CN101441983B (zh) * 2007-11-21 2011-01-12 北京北方微电子基地设备工艺研究中心有限责任公司 等离子体约束装置及应用该约束装置的半导体处理设备
US7993057B2 (en) * 2007-12-20 2011-08-09 Asm America, Inc. Redundant temperature sensor for semiconductor processing chambers
JP4723559B2 (ja) * 2007-12-25 2011-07-13 株式会社日立ハイテクノロジーズ プラズマ処理装置
US20090188625A1 (en) * 2008-01-28 2009-07-30 Carducci James D Etching chamber having flow equalizer and lower liner
KR101625516B1 (ko) * 2008-02-08 2016-05-30 램 리써치 코포레이션 플라즈마 프로세싱 장치 및 플라즈마 프로세싱 장치에서 반도체 기판을 처리하는 방법
US20090214825A1 (en) * 2008-02-26 2009-08-27 Applied Materials, Inc. Ceramic coating comprising yttrium which is resistant to a reducing plasma
KR101486553B1 (ko) * 2008-03-20 2015-01-26 주식회사 원익아이피에스 진공처리장치
JP5475261B2 (ja) * 2008-03-31 2014-04-16 東京エレクトロン株式会社 プラズマ処理装置
US7987814B2 (en) * 2008-04-07 2011-08-02 Applied Materials, Inc. Lower liner with integrated flow equalizer and improved conductance
US7946762B2 (en) * 2008-06-17 2011-05-24 Asm America, Inc. Thermocouple
JP5357486B2 (ja) * 2008-09-30 2013-12-04 東京エレクトロン株式会社 プラズマ処理装置
US9175388B2 (en) * 2008-11-01 2015-11-03 Ultratech, Inc. Reaction chamber with removable liner
US8262287B2 (en) * 2008-12-08 2012-09-11 Asm America, Inc. Thermocouple
US8100583B2 (en) * 2009-05-06 2012-01-24 Asm America, Inc. Thermocouple
US8382370B2 (en) 2009-05-06 2013-02-26 Asm America, Inc. Thermocouple assembly with guarded thermocouple junction
US9297705B2 (en) 2009-05-06 2016-03-29 Asm America, Inc. Smart temperature measuring device
JP5351625B2 (ja) * 2009-06-11 2013-11-27 三菱重工業株式会社 プラズマ処理装置
JP5424744B2 (ja) * 2009-07-01 2014-02-26 株式会社フェローテック 分割環状リブ型プラズマ処理装置
JP5302813B2 (ja) * 2009-07-28 2013-10-02 東京エレクトロン株式会社 堆積物対策用カバー及びプラズマ処理装置
JP5745519B2 (ja) * 2009-08-31 2015-07-08 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 高周波（ｒｆ）接地帰還構成
JP5282008B2 (ja) * 2009-10-26 2013-09-04 株式会社日立ハイテクノロジーズ 真空処理装置
US8840725B2 (en) * 2009-11-11 2014-09-23 Applied Materials, Inc. Chamber with uniform flow and plasma distribution
US8597462B2 (en) * 2010-05-21 2013-12-03 Lam Research Corporation Movable chamber liner plasma confinement screen combination for plasma processing apparatuses
US8826855B2 (en) * 2010-06-30 2014-09-09 Lam Research Corporation C-shaped confinement ring for a plasma processing chamber
GB2489436B (en) * 2011-03-28 2013-05-01 Han-Chun Lin Snow protection device
US9982346B2 (en) 2011-08-31 2018-05-29 Alta Devices, Inc. Movable liner assembly for a deposition zone in a CVD reactor
US9653267B2 (en) * 2011-10-06 2017-05-16 Applied Materials, Inc. Temperature controlled chamber liner
US20130105085A1 (en) * 2011-10-28 2013-05-02 Applied Materials, Inc. Plasma reactor with chamber wall temperature control
KR102044568B1 (ko) * 2011-11-24 2019-11-13 램 리써치 코포레이션 대칭형 rf 복귀 경로 라이너
CN103165379A (zh) * 2011-12-13 2013-06-19 中国科学院微电子研究所 一种等离子体腔室内衬结构
CN103165368B (zh) * 2011-12-16 2016-02-03 中微半导体设备(上海)有限公司 一种温度可调的等离子体约束装置
US9490152B2 (en) * 2012-05-29 2016-11-08 Taiwan Semiconductor Manufacturing Company, Ltd. Asymmetrical chamber configuration
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
CN102865250B (zh) * 2012-09-27 2017-04-19 上海华虹宏力半导体制造有限公司 用于半导体制造的泵抽吸端口的遮挡盖
KR20140090445A (ko) * 2013-01-09 2014-07-17 삼성디스플레이 주식회사 기판 처리 장치
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
USD702188S1 (en) 2013-03-08 2014-04-08 Asm Ip Holding B.V. Thermocouple
KR101451244B1 (ko) * 2013-03-22 2014-10-15 참엔지니어링(주) 라이너 어셈블리 및 이를 구비하는 기판 처리 장치
SG10201709699RA (en) * 2013-05-23 2017-12-28 Applied Materials Inc A coated liner assembly for a semiconductor processing chamber
CN103337444A (zh) * 2013-06-08 2013-10-02 天通吉成机器技术有限公司 一种干法等离子刻蚀机的反应腔
CN103346058A (zh) * 2013-06-08 2013-10-09 天通吉成机器技术有限公司 一种等离子体刻蚀设备的腔室内衬
CN105408984B (zh) * 2014-02-06 2019-12-10 应用材料公司 用于启用轴对称以用于改进的流动传导性和均匀性的在线去耦合等离子体源腔室硬件设计
US9673092B2 (en) * 2014-03-06 2017-06-06 Asm Ip Holding B.V. Film forming apparatus, and method of manufacturing semiconductor device
JP6660936B2 (ja) * 2014-04-09 2020-03-11 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 改良されたフロー均一性／ガスコンダクタンスを備えた可変処理容積に対処するための対称チャンバ本体設計アーキテクチャ
KR20160002543A (ko) 2014-06-30 2016-01-08 세메스 주식회사 기판 처리 장치
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US11637002B2 (en) * 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
JP6361495B2 (ja) * 2014-12-22 2018-07-25 東京エレクトロン株式会社 熱処理装置
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
CN105321794A (zh) * 2015-10-19 2016-02-10 上海华力微电子有限公司 大马士革一体化刻蚀机腔体和衬底部件
CN107301941B (zh) 2016-04-14 2019-04-23 北京北方华创微电子装备有限公司 等离子体处理设备及其操作方法
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10811233B2 (en) * 2016-08-13 2020-10-20 Applied Materials, Inc. Process chamber having tunable showerhead and tunable liner
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
CN108538745B (zh) * 2017-03-01 2022-01-07 北京北方华创微电子装备有限公司 反应腔室
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
USD838681S1 (en) * 2017-04-28 2019-01-22 Applied Materials, Inc. Plasma chamber liner
USD842259S1 (en) * 2017-04-28 2019-03-05 Applied Materials, Inc. Plasma chamber liner
USD837754S1 (en) * 2017-04-28 2019-01-08 Applied Materials, Inc. Plasma chamber liner
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
SG11202001343SA (en) * 2017-08-17 2020-03-30 Beijing Naura Microelectronics Equipment Co Ltd Liner, reaction chamber, and semiconductor processing device
CN107578975B (zh) * 2017-08-17 2020-06-19 北京北方华创微电子装备有限公司 反应腔室及半导体加工设备
US20190119815A1 (en) * 2017-10-24 2019-04-25 Applied Materials, Inc. Systems and processes for plasma filtering
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
KR102642790B1 (ko) * 2018-08-06 2024-03-05 어플라이드 머티어리얼스, 인코포레이티드 처리 챔버를 위한 라이너
CN110828272B (zh) * 2018-08-09 2022-09-16 北京北方华创微电子装备有限公司 腔室内衬、下电极装置和半导体处理设备
JP7089987B2 (ja) * 2018-08-22 2022-06-23 株式会社日本製鋼所 原子層堆積装置
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
CN109273342A (zh) * 2018-11-02 2019-01-25 北京北方华创微电子装备有限公司 内衬组件、反应腔室及半导体加工设备
WO2020088413A1 (zh) * 2018-11-02 2020-05-07 北京北方华创微电子装备有限公司 内衬组件、反应腔室及半导体加工设备
CN208835019U (zh) * 2018-11-12 2019-05-07 江苏鲁汶仪器有限公司 一种反应腔内衬
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
JP1638504S (de) * 2018-12-06 2019-08-05
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
US20220139661A1 (en) * 2019-04-01 2022-05-05 One Semicon. Co., Ltd. Manufacturing method of plasma focus ring for semiconductor etching apparatus
WO2021162932A1 (en) * 2020-02-10 2021-08-19 Applied Materials, Inc. Methods and apparatus for improving flow uniformity in a process chamber

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5304248A (en) * 1990-12-05 1994-04-19 Applied Materials, Inc. Passive shield for CVD wafer processing which provides frontside edge exclusion and prevents backside depositions
JP3566740B2 (ja) * 1992-09-30 2004-09-15 アプライド マテリアルズ インコーポレイテッド 全ウエハデポジション用装置
US5271963A (en) 1992-11-16 1993-12-21 Materials Research Corporation Elimination of low temperature ammonia salt in TiCl4 NH3 CVD reaction
US5614055A (en) * 1993-08-27 1997-03-25 Applied Materials, Inc. High density plasma CVD and etching reactor
US5641375A (en) 1994-08-15 1997-06-24 Applied Materials, Inc. Plasma etching reactor with surface protection means against erosion of walls
US5891350A (en) 1994-12-15 1999-04-06 Applied Materials, Inc. Adjusting DC bias voltage in plasma chambers
US5605637A (en) 1994-12-15 1997-02-25 Applied Materials Inc. Adjustable dc bias control in a plasma reactor
US5846332A (en) * 1996-07-12 1998-12-08 Applied Materials, Inc. Thermally floating pedestal collar in a chemical vapor deposition chamber
US5882411A (en) * 1996-10-21 1999-03-16 Applied Materials, Inc. Faceplate thermal choke in a CVD plasma reactor
US5977519A (en) * 1997-02-28 1999-11-02 Applied Komatsu Technology, Inc. Heating element with a diamond sealing material
US5900064A (en) * 1997-05-01 1999-05-04 Applied Materials, Inc. Plasma process chamber

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EP1125317A2 (de) 2001-08-22
US6277237B1 (en) 2001-08-21
KR20010079914A (ko) 2001-08-22
WO2000019495A2 (en) 2000-04-06
CN1152414C (zh) 2004-06-02
WO2000019495A3 (en) 2000-05-25
JP2003505855A (ja) 2003-02-12
TW420847B (en) 2001-02-01
KR100463070B1 (ko) 2004-12-23
US6170429B1 (en) 2001-01-09
AU1198800A (en) 2000-04-17
EP1125317B1 (de) 2008-08-13

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