KR20010079914A - 반도체공정 체임버용 체임버라이너 - Google Patents
반도체공정 체임버용 체임버라이너 Download PDFInfo
- Publication number
- KR20010079914A KR20010079914A KR1020017003776A KR20017003776A KR20010079914A KR 20010079914 A KR20010079914 A KR 20010079914A KR 1020017003776 A KR1020017003776 A KR 1020017003776A KR 20017003776 A KR20017003776 A KR 20017003776A KR 20010079914 A KR20010079914 A KR 20010079914A
- Authority
- KR
- South Korea
- Prior art keywords
- wall
- chamber
- sealing cover
- plasma
- liner
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 62
- 239000004065 semiconductor Substances 0.000 title claims abstract description 24
- 238000007789 sealing Methods 0.000 claims abstract description 42
- 238000012545 processing Methods 0.000 claims abstract description 10
- 238000004519 manufacturing process Methods 0.000 claims description 16
- 229910052782 aluminium Inorganic materials 0.000 claims description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 14
- 235000012431 wafers Nutrition 0.000 description 28
- 238000009826 distribution Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 238000009987 spinning Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- DMFGNRRURHSENX-UHFFFAOYSA-N beryllium copper Chemical compound [Be].[Cu] DMFGNRRURHSENX-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- -1 for example Chemical compound 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32495—Means for protecting the vessel against plasma
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10S156/916—Differential etching apparatus including chamber cleaning means or shield for preventing deposits
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Abstract
Description
Claims (20)
- 반도체 웨이퍼의 공정작업 동안 진공이 형성되는 체임버를 한정하는 내면을 갖춘 하우징과;다수의 구멍을 갖춘 플라즈마 밀폐덮개와, 이 플라즈마 밀폐덮개로부터 위로 연장되는 외측벽, 이 외측벽으로부터 바깥으로 연장되고 상기 체임버를 통과하여 대기압상태의 공간으로 연장되는 외측플랜지를 갖춘 체임버라이너로 이루어진 반도체제조에 사용되는 공정 체임버.
- 제 1항에 있어서, 상기 체임버라이너는 상기 플라즈마 밀폐덮개로부터 위로 연장되는 내측벽을 더 포함하는 것을 특징으로 하는 반도체제조에 사용되는 공정 체임버.
- 제 2항에 있어서, 상기 플라즈마 밀폐덮개와, 상기 내측벽과 외측벽 및, 상기 외측플랜지가 서로 일체로 이루어진 것을 특징으로 하는 반도체제조에 사용되는 공정 체임버.
- 제 2항에 있어서, 상기 플라즈마 밀폐덮개는 내주와 외주를 한정하는 고리형상부(annular configuration)를 가지고, 상기 외측벽은 원통형이고 제 1거리만큼 상기 외주로부터 위로 연장되며, 상기 내측벽은 원통형이고 제 2거리만큼 상기 내주로부터 위로 연장되되, 상기 제 1거리가 상기 제 2거리보다 더 긴 것을 특징으로 하는 반도체제조에 사용되는 공정 체임버.
- 제 4항에 있어서, 상기 내측벽과 외측벽은 실질적으로는 상기 플라즈마 밀폐덮개와 직각을 이루는 것을 특징으로 하는 반도체제조에 사용되는 공정 체임버.
- 제 2항에 있어서, 상기 내측벽은 실질적으로는 상기 외측플랜지가 연장되는 방향에 반대되는 방향의 안쪽으로 연장되는 내측플랜지를 포함하는 것을 특징으로 하는 반도체제조에 사용되는 공정 체임버.
- 제 1항에 있어서, 제 1RF개스킷은 상기 외측플랜지의 윗면과 접촉되고, 제 2RF개스킷은 상기 외측플랜지의 아랫면과 접촉되는 것을 특징으로 하는 반도체제조에 사용되는 공정 체임버.
- 제 7항에 있어서, 상기 체임버라이너는 산화피막이 형성된(anodized) 알루미늄으로 이루어지고, 제 1RF개스킷과 제 2RF개스킷은 상기 외측플랜지의 윗면과 아랫면의 영역들과 접촉하며 각각 실질적으로는 산화피막이 형성되지 않은 것을 특징으로 하는 반도체제조에 사용되는 공정 체임버.
- 다수의 구멍을 갖춘 플라즈마 밀폐덮개와, 이 플라즈마 밀폐덮개로부터 위로 연장되는 외측벽, 이 외측벽으로부터 바깥으로 연장되고 공정 체임버의 내부진공구역을 통과하여 대기압상태의 공간으로 연장되도록 된 외측플랜지로 이루어진 반도체제조용 공정 체임버에 사용되는 체임버라이너.
- 제 9항에 있어서, 상기 체임버라이너는 상기 플라즈마 밀폐덮개로부터 위로 연장되는 내측벽을 더 포함하는 것을 특징으로 하는 반도체제조용 공정 체임버에 사용되는 체임버라이너.
- 제 10항에 있어서, 상기 플라즈마 밀폐덮개와, 상기 내측벽과 외측벽 및, 상기 외측플랜지가 서로 일체로 이루어진 것을 특징으로 하는 반도체제조용 공정 체임버에 사용되는 체임버라이너.
- 제 10항에 있어서, 상기 플라즈마 밀폐덮개는 내주와 외주를 한정하는 고리형상부를 가지고, 상기 외측벽은 원통형이고 제 1거리만큼 상기 외주로부터 위로 연장되며, 상기 내측벽은 원통형이고 제 2거리만큼 상기 내주로부터 위로 연장되되, 상기 제 1거리가 상기 제 2거리보다 더 긴 것을 특징으로 하는 반도체제조용 공정 체임버에 사용되는 체임버라이너.
- 제 12항에 있어서, 상기 내측벽과 외측벽은 실질적으로는 상기 프라즈마 밀폐덮개와 직각을 이루는 것을 특징으로 하는 반도체제조용 공정 체임버에 사용되는 체임버라이너.
- 제 10항에 있어서, 상기 내측벽은 실질적으로는 상기 외측플랜지가 연장되는 방향에 반대되는 방향의 안쪽으로 연장되는 내측플랜지를 포함하는 것을 특징으로 하는 반도체제조용 공정 체임버에 사용되는 체임버라이너.
- 제 9항에 있어서, 상기 체임버라이너는 산화피막이 형성된 알루미늄으로 이루어지고, 상기 외측플랜지의 윗면과 아랫면은 실질적으로는 산화피막이 형성되지 않은 RF개스킷들과 접촉하는 부분을 갖는 것을 특징으로 하는 반도체제조용 공정 체임버에 사용되는 체임버라이너.
- 다수의 구멍을 갖춘 플라즈마 밀폐덮개와, 이 플라즈마 밀폐덮개와 일체를 이루면서 위로 연장되는 외측벽, 상기 플라즈마 밀폐덮개와 일체를 이루면서 위로 연장되는 내측벽, 상기 외측벽과 일체를 이루면서 바깥으로 연장되고 공정 체임버의 내부진공구역을 통과하여 대기압상태의 공간으로 연장되도록 된 외측플랜지로 이루어진 반도체제조용 공정 체임버에 사용되는 체임버라이너.
- 제 16항에 있어서, 상기 플라즈마 밀폐덮개는 내주와 외주를 한정하는 고리형상부를 가지고, 상기 외측벽은 원통형이고 제 1거리만큼 상기 외주로부터 위로 연장되며, 상기 내측벽은 원통형이고 제 2거리만큼 상기 내주로부터 위로 연장되되, 상기 제 1거리가 상기 제 2거리보다 더 긴 것을 특징으로 하는 반도체제조용 공정 체임버에 사용되는 체임버라이너.
- 제 17항에 있어서, 상기 내측벽과 외측벽은 실질적으로는 상기 플라즈마 밀폐덮개와 직각을 이루는 것을 특징으로 하는 반도체제조용 공정 체임버에 사용되는 체임버라이너.
- 제 16항에 있어서, 상기 내측벽은 실질적으로는 상기 외측플랜지가 연장되는 방향에 반대되는 방향의 안쪽으로 연장되는 내측플랜지를 포함하는 것을 특징으로 하는 반도체제조용 공정 체임버에 사용되는 체임버라이너.
- 제 16항에 있어서, 상기 체임버라이너는 산화피막이 형성된 알루미늄으로 이루어지고, 외측플랜지의 윗면과 아랫면은 실질적으로는 산화피막이 형성되지 않은 RF개스킷들과 접촉하는 영역들을 갖는 것을 특징으로 하는 반도체제조용 공정 체임버에 사용되는 체임버라이너.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/163,722 | 1998-09-30 | ||
US09/163,722 US6170429B1 (en) | 1998-09-30 | 1998-09-30 | Chamber liner for semiconductor process chambers |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20010079914A true KR20010079914A (ko) | 2001-08-22 |
KR100463070B1 KR100463070B1 (ko) | 2004-12-23 |
Family
ID=22591293
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-2001-7003776A KR100463070B1 (ko) | 1998-09-30 | 1999-09-28 | 반도체공정 체임버용 체임버라이너 |
Country Status (9)
Country | Link |
---|---|
US (2) | US6170429B1 (ko) |
EP (1) | EP1125317B1 (ko) |
JP (1) | JP2003505855A (ko) |
KR (1) | KR100463070B1 (ko) |
CN (1) | CN1152414C (ko) |
AU (1) | AU1198800A (ko) |
DE (1) | DE69939326D1 (ko) |
TW (1) | TW420847B (ko) |
WO (1) | WO2000019495A2 (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20130115099A (ko) * | 2010-05-21 | 2013-10-21 | 램 리써치 코포레이션 | 플라즈마 프로세싱 장치들을 위한 이동가능 챔버 라이너 플라즈마 한정 스크린 조합 |
KR20210076973A (ko) * | 2018-11-12 | 2021-06-24 | 장쑤 루벤 인스트루먼츠 컴퍼니 리미티드 | 반응 챔버 라이닝 |
Families Citing this family (162)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW514996B (en) * | 1999-12-10 | 2002-12-21 | Tokyo Electron Ltd | Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film |
DE60123813T2 (de) * | 2000-04-06 | 2007-08-02 | Asm America Inc., Phoenix | Sperrschicht für glasartige werkstoffe |
US7011039B1 (en) * | 2000-07-07 | 2006-03-14 | Applied Materials, Inc. | Multi-purpose processing chamber with removable chamber liner |
US20020038791A1 (en) * | 2000-10-03 | 2002-04-04 | Tomohiro Okumura | Plasma processing method and apparatus |
US6830653B2 (en) * | 2000-10-03 | 2004-12-14 | Matsushita Electric Industrial Co., Ltd. | Plasma processing method and apparatus |
JP4120561B2 (ja) * | 2000-10-03 | 2008-07-16 | 松下電器産業株式会社 | プラズマ処理方法およびプラズマ処理装置 |
US6475336B1 (en) * | 2000-10-06 | 2002-11-05 | Lam Research Corporation | Electrostatically clamped edge ring for plasma processing |
JP2002151473A (ja) * | 2000-11-13 | 2002-05-24 | Tokyo Electron Ltd | プラズマ処理装置及びその組立方法 |
US6554954B2 (en) * | 2001-04-03 | 2003-04-29 | Applied Materials Inc. | Conductive collar surrounding semiconductor workpiece in plasma chamber |
US20030019428A1 (en) * | 2001-04-28 | 2003-01-30 | Applied Materials, Inc. | Chemical vapor deposition chamber |
US6974523B2 (en) * | 2001-05-16 | 2005-12-13 | Lam Research Corporation | Hollow anode plasma reactor and method |
KR20020095324A (ko) * | 2001-06-14 | 2002-12-26 | 삼성전자 주식회사 | 고주파 파워를 이용하는 반도체장치 제조설비 |
KR100422446B1 (ko) * | 2001-07-12 | 2004-03-12 | 삼성전자주식회사 | 건식식각장치의 이그저스트링 |
JP2005527965A (ja) * | 2001-08-28 | 2005-09-15 | ハイニックス セミコンダクター マニュファクチュアリング アメリカ インコーポレイテッド | プラズマチャンバ用チャンバシールド |
US7479304B2 (en) * | 2002-02-14 | 2009-01-20 | Applied Materials, Inc. | Gas distribution plate fabricated from a solid yttrium oxide-comprising substrate |
US6776873B1 (en) * | 2002-02-14 | 2004-08-17 | Jennifer Y Sun | Yttrium oxide based surface coating for semiconductor IC processing vacuum chambers |
US8067067B2 (en) * | 2002-02-14 | 2011-11-29 | Applied Materials, Inc. | Clean, dense yttrium oxide coating protecting semiconductor processing apparatus |
US20080213496A1 (en) * | 2002-02-14 | 2008-09-04 | Applied Materials, Inc. | Method of coating semiconductor processing apparatus with protective yttrium-containing coatings |
US6613587B1 (en) * | 2002-04-11 | 2003-09-02 | Micron Technology, Inc. | Method of replacing at least a portion of a semiconductor substrate deposition chamber liner |
US6825051B2 (en) * | 2002-05-17 | 2004-11-30 | Asm America, Inc. | Plasma etch resistant coating and process |
US7166166B2 (en) | 2002-09-30 | 2007-01-23 | Tokyo Electron Limited | Method and apparatus for an improved baffle plate in a plasma processing system |
US6798519B2 (en) * | 2002-09-30 | 2004-09-28 | Tokyo Electron Limited | Method and apparatus for an improved optical window deposition shield in a plasma processing system |
US7147749B2 (en) * | 2002-09-30 | 2006-12-12 | Tokyo Electron Limited | Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system |
US7137353B2 (en) * | 2002-09-30 | 2006-11-21 | Tokyo Electron Limited | Method and apparatus for an improved deposition shield in a plasma processing system |
US7204912B2 (en) * | 2002-09-30 | 2007-04-17 | Tokyo Electron Limited | Method and apparatus for an improved bellows shield in a plasma processing system |
US7166200B2 (en) * | 2002-09-30 | 2007-01-23 | Tokyo Electron Limited | Method and apparatus for an improved upper electrode plate in a plasma processing system |
US6837966B2 (en) * | 2002-09-30 | 2005-01-04 | Tokyo Electron Limeted | Method and apparatus for an improved baffle plate in a plasma processing system |
CN1249789C (zh) * | 2002-11-28 | 2006-04-05 | 东京毅力科创株式会社 | 等离子体处理容器内部件 |
CN1777691B (zh) * | 2003-03-21 | 2011-11-23 | 东京毅力科创株式会社 | 用于减少处理过程中基片背部的淀积的方法和装置 |
CN100495413C (zh) | 2003-03-31 | 2009-06-03 | 东京毅力科创株式会社 | 用于邻接在处理元件上的相邻覆层的方法 |
US7291566B2 (en) * | 2003-03-31 | 2007-11-06 | Tokyo Electron Limited | Barrier layer for a processing element and a method of forming the same |
US7083702B2 (en) * | 2003-06-12 | 2006-08-01 | Applied Materials, Inc. | RF current return path for a large area substrate plasma reactor |
JP4399206B2 (ja) * | 2003-08-06 | 2010-01-13 | 株式会社アルバック | 薄膜製造装置 |
EP1661161A2 (en) * | 2003-08-07 | 2006-05-31 | Sundew Technologies, LLC | Perimeter partition-valve with protected seals |
US6974781B2 (en) * | 2003-10-20 | 2005-12-13 | Asm International N.V. | Reactor precoating for reduced stress and uniform CVD |
US7910218B2 (en) | 2003-10-22 | 2011-03-22 | Applied Materials, Inc. | Cleaning and refurbishing chamber components having metal coatings |
US7645341B2 (en) * | 2003-12-23 | 2010-01-12 | Lam Research Corporation | Showerhead electrode assembly for plasma processing apparatuses |
US20060081337A1 (en) * | 2004-03-12 | 2006-04-20 | Shinji Himori | Capacitive coupling plasma processing apparatus |
US8236105B2 (en) * | 2004-04-08 | 2012-08-07 | Applied Materials, Inc. | Apparatus for controlling gas flow in a semiconductor substrate processing chamber |
US8540843B2 (en) * | 2004-06-30 | 2013-09-24 | Lam Research Corporation | Plasma chamber top piece assembly |
US7670436B2 (en) | 2004-11-03 | 2010-03-02 | Applied Materials, Inc. | Support ring assembly |
US7552521B2 (en) * | 2004-12-08 | 2009-06-30 | Tokyo Electron Limited | Method and apparatus for improved baffle plate |
US7601242B2 (en) * | 2005-01-11 | 2009-10-13 | Tokyo Electron Limited | Plasma processing system and baffle assembly for use in plasma processing system |
US7430986B2 (en) * | 2005-03-18 | 2008-10-07 | Lam Research Corporation | Plasma confinement ring assemblies having reduced polymer deposition characteristics |
US20060225654A1 (en) * | 2005-03-29 | 2006-10-12 | Fink Steven T | Disposable plasma reactor materials and methods |
US8617672B2 (en) | 2005-07-13 | 2013-12-31 | Applied Materials, Inc. | Localized surface annealing of components for substrate processing chambers |
US7762114B2 (en) * | 2005-09-09 | 2010-07-27 | Applied Materials, Inc. | Flow-formed chamber component having a textured surface |
US9127362B2 (en) | 2005-10-31 | 2015-09-08 | Applied Materials, Inc. | Process kit and target for substrate processing chamber |
US20070125646A1 (en) * | 2005-11-25 | 2007-06-07 | Applied Materials, Inc. | Sputtering target for titanium sputtering chamber |
US7417733B2 (en) * | 2006-02-08 | 2008-08-26 | Lam Research Corporation | Chamber particle detection system |
US20070283884A1 (en) * | 2006-05-30 | 2007-12-13 | Applied Materials, Inc. | Ring assembly for substrate processing chamber |
CN101165868B (zh) * | 2006-10-20 | 2010-05-12 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 晶片处理室的内衬及包含该内衬的晶片处理室 |
CN101207003B (zh) * | 2006-12-22 | 2010-10-06 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 晶片处理室的内衬及包含该内衬的晶片处理室 |
US7981262B2 (en) * | 2007-01-29 | 2011-07-19 | Applied Materials, Inc. | Process kit for substrate processing chamber |
US10622194B2 (en) | 2007-04-27 | 2020-04-14 | Applied Materials, Inc. | Bulk sintered solid solution ceramic which exhibits fracture toughness and halogen plasma resistance |
US10242888B2 (en) | 2007-04-27 | 2019-03-26 | Applied Materials, Inc. | Semiconductor processing apparatus with a ceramic-comprising surface which exhibits fracture toughness and halogen plasma resistance |
US7874726B2 (en) * | 2007-05-24 | 2011-01-25 | Asm America, Inc. | Thermocouple |
US7942969B2 (en) | 2007-05-30 | 2011-05-17 | Applied Materials, Inc. | Substrate cleaning chamber and components |
US8034410B2 (en) | 2007-07-17 | 2011-10-11 | Asm International N.V. | Protective inserts to line holes in parts for semiconductor process equipment |
US9184072B2 (en) * | 2007-07-27 | 2015-11-10 | Mattson Technology, Inc. | Advanced multi-workpiece processing chamber |
US8367227B2 (en) | 2007-08-02 | 2013-02-05 | Applied Materials, Inc. | Plasma-resistant ceramics with controlled electrical resistivity |
US20090052498A1 (en) * | 2007-08-24 | 2009-02-26 | Asm America, Inc. | Thermocouple |
CN101383266B (zh) * | 2007-09-03 | 2011-08-17 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 反应腔室 |
US7807222B2 (en) * | 2007-09-17 | 2010-10-05 | Asm International N.V. | Semiconductor processing parts having apertures with deposited coatings and methods for forming the same |
US20090084317A1 (en) * | 2007-09-28 | 2009-04-02 | Applied Materials, Inc. | Atomic layer deposition chamber and components |
CN101441983B (zh) * | 2007-11-21 | 2011-01-12 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 等离子体约束装置及应用该约束装置的半导体处理设备 |
US7993057B2 (en) * | 2007-12-20 | 2011-08-09 | Asm America, Inc. | Redundant temperature sensor for semiconductor processing chambers |
JP4723559B2 (ja) * | 2007-12-25 | 2011-07-13 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
US20090188625A1 (en) * | 2008-01-28 | 2009-07-30 | Carducci James D | Etching chamber having flow equalizer and lower liner |
SG188141A1 (en) * | 2008-02-08 | 2013-03-28 | Lam Res Corp | A protective coating for a plasma processing chamber part and a method of use |
US20090214825A1 (en) * | 2008-02-26 | 2009-08-27 | Applied Materials, Inc. | Ceramic coating comprising yttrium which is resistant to a reducing plasma |
KR101486553B1 (ko) * | 2008-03-20 | 2015-01-26 | 주식회사 원익아이피에스 | 진공처리장치 |
JP5475261B2 (ja) * | 2008-03-31 | 2014-04-16 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US7987814B2 (en) * | 2008-04-07 | 2011-08-02 | Applied Materials, Inc. | Lower liner with integrated flow equalizer and improved conductance |
US7946762B2 (en) * | 2008-06-17 | 2011-05-24 | Asm America, Inc. | Thermocouple |
JP5357486B2 (ja) * | 2008-09-30 | 2013-12-04 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US9175388B2 (en) * | 2008-11-01 | 2015-11-03 | Ultratech, Inc. | Reaction chamber with removable liner |
US8262287B2 (en) | 2008-12-08 | 2012-09-11 | Asm America, Inc. | Thermocouple |
US9297705B2 (en) | 2009-05-06 | 2016-03-29 | Asm America, Inc. | Smart temperature measuring device |
US8100583B2 (en) * | 2009-05-06 | 2012-01-24 | Asm America, Inc. | Thermocouple |
US8382370B2 (en) * | 2009-05-06 | 2013-02-26 | Asm America, Inc. | Thermocouple assembly with guarded thermocouple junction |
JP5351625B2 (ja) * | 2009-06-11 | 2013-11-27 | 三菱重工業株式会社 | プラズマ処理装置 |
JP5424744B2 (ja) * | 2009-07-01 | 2014-02-26 | 株式会社フェローテック | 分割環状リブ型プラズマ処理装置 |
JP5302813B2 (ja) * | 2009-07-28 | 2013-10-02 | 東京エレクトロン株式会社 | 堆積物対策用カバー及びプラズマ処理装置 |
KR102240849B1 (ko) | 2009-08-31 | 2021-04-14 | 램 리써치 코포레이션 | 무선 주파수 (rf) 접지 복귀 장치들 |
JP5282008B2 (ja) * | 2009-10-26 | 2013-09-04 | 株式会社日立ハイテクノロジーズ | 真空処理装置 |
US8840725B2 (en) * | 2009-11-11 | 2014-09-23 | Applied Materials, Inc. | Chamber with uniform flow and plasma distribution |
US8826855B2 (en) * | 2010-06-30 | 2014-09-09 | Lam Research Corporation | C-shaped confinement ring for a plasma processing chamber |
GB2489436B (en) * | 2011-03-28 | 2013-05-01 | Han-Chun Lin | Snow protection device |
US9982346B2 (en) * | 2011-08-31 | 2018-05-29 | Alta Devices, Inc. | Movable liner assembly for a deposition zone in a CVD reactor |
US9653267B2 (en) * | 2011-10-06 | 2017-05-16 | Applied Materials, Inc. | Temperature controlled chamber liner |
US20130105085A1 (en) * | 2011-10-28 | 2013-05-02 | Applied Materials, Inc. | Plasma reactor with chamber wall temperature control |
WO2013078420A2 (en) * | 2011-11-24 | 2013-05-30 | Lam Research Corporation | Symmetric rf return path liner |
CN103165379A (zh) * | 2011-12-13 | 2013-06-19 | 中国科学院微电子研究所 | 一种等离子体腔室内衬结构 |
CN103165368B (zh) * | 2011-12-16 | 2016-02-03 | 中微半导体设备(上海)有限公司 | 一种温度可调的等离子体约束装置 |
US9490152B2 (en) * | 2012-05-29 | 2016-11-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Asymmetrical chamber configuration |
US9132436B2 (en) | 2012-09-21 | 2015-09-15 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
CN102865250B (zh) * | 2012-09-27 | 2017-04-19 | 上海华虹宏力半导体制造有限公司 | 用于半导体制造的泵抽吸端口的遮挡盖 |
KR20140090445A (ko) * | 2013-01-09 | 2014-07-17 | 삼성디스플레이 주식회사 | 기판 처리 장치 |
US10256079B2 (en) | 2013-02-08 | 2019-04-09 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
USD702188S1 (en) | 2013-03-08 | 2014-04-08 | Asm Ip Holding B.V. | Thermocouple |
KR101451244B1 (ko) * | 2013-03-22 | 2014-10-15 | 참엔지니어링(주) | 라이너 어셈블리 및 이를 구비하는 기판 처리 장치 |
KR102202406B1 (ko) * | 2013-05-23 | 2021-01-13 | 어플라이드 머티어리얼스, 인코포레이티드 | 반도체 처리 챔버를 위한 코팅된 라이너 어셈블리 |
CN103346058A (zh) * | 2013-06-08 | 2013-10-09 | 天通吉成机器技术有限公司 | 一种等离子体刻蚀设备的腔室内衬 |
CN103337444A (zh) * | 2013-06-08 | 2013-10-02 | 天通吉成机器技术有限公司 | 一种干法等离子刻蚀机的反应腔 |
CN110690098A (zh) * | 2014-02-06 | 2020-01-14 | 应用材料公司 | 基板支撑组件以及用于处理基板的设备 |
US9673092B2 (en) * | 2014-03-06 | 2017-06-06 | Asm Ip Holding B.V. | Film forming apparatus, and method of manufacturing semiconductor device |
KR102392065B1 (ko) * | 2014-04-09 | 2022-04-27 | 어플라이드 머티어리얼스, 인코포레이티드 | 개선된 유동 균일성/가스 컨덕턴스로 가변 프로세스 볼륨을 처리하기 위한 대칭적 챔버 본체 설계 아키텍처 |
KR20160002543A (ko) | 2014-06-30 | 2016-01-08 | 세메스 주식회사 | 기판 처리 장치 |
US9966240B2 (en) | 2014-10-14 | 2018-05-08 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
US11637002B2 (en) * | 2014-11-26 | 2023-04-25 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
JP6361495B2 (ja) * | 2014-12-22 | 2018-07-25 | 東京エレクトロン株式会社 | 熱処理装置 |
US20160225652A1 (en) | 2015-02-03 | 2016-08-04 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
US9741593B2 (en) | 2015-08-06 | 2017-08-22 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
US10504700B2 (en) | 2015-08-27 | 2019-12-10 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
CN105321794A (zh) * | 2015-10-19 | 2016-02-10 | 上海华力微电子有限公司 | 大马士革一体化刻蚀机腔体和衬底部件 |
CN107301941B (zh) | 2016-04-14 | 2019-04-23 | 北京北方华创微电子装备有限公司 | 等离子体处理设备及其操作方法 |
US10504754B2 (en) | 2016-05-19 | 2019-12-10 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US10811233B2 (en) * | 2016-08-13 | 2020-10-20 | Applied Materials, Inc. | Process chamber having tunable showerhead and tunable liner |
US10546729B2 (en) | 2016-10-04 | 2020-01-28 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
US10431429B2 (en) | 2017-02-03 | 2019-10-01 | Applied Materials, Inc. | Systems and methods for radial and azimuthal control of plasma uniformity |
CN108538745B (zh) * | 2017-03-01 | 2022-01-07 | 北京北方华创微电子装备有限公司 | 反应腔室 |
US10943834B2 (en) | 2017-03-13 | 2021-03-09 | Applied Materials, Inc. | Replacement contact process |
USD842259S1 (en) * | 2017-04-28 | 2019-03-05 | Applied Materials, Inc. | Plasma chamber liner |
USD837754S1 (en) * | 2017-04-28 | 2019-01-08 | Applied Materials, Inc. | Plasma chamber liner |
USD838681S1 (en) * | 2017-04-28 | 2019-01-22 | Applied Materials, Inc. | Plasma chamber liner |
US11276559B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
US11276590B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
US10920320B2 (en) | 2017-06-16 | 2021-02-16 | Applied Materials, Inc. | Plasma health determination in semiconductor substrate processing reactors |
US10727080B2 (en) | 2017-07-07 | 2020-07-28 | Applied Materials, Inc. | Tantalum-containing material removal |
US10297458B2 (en) | 2017-08-07 | 2019-05-21 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
CN107578975B (zh) * | 2017-08-17 | 2020-06-19 | 北京北方华创微电子装备有限公司 | 反应腔室及半导体加工设备 |
SG11202001343SA (en) * | 2017-08-17 | 2020-03-30 | Beijing Naura Microelectronics Equipment Co Ltd | Liner, reaction chamber, and semiconductor processing device |
US20190119815A1 (en) * | 2017-10-24 | 2019-04-25 | Applied Materials, Inc. | Systems and processes for plasma filtering |
US10903054B2 (en) | 2017-12-19 | 2021-01-26 | Applied Materials, Inc. | Multi-zone gas distribution systems and methods |
US11328909B2 (en) | 2017-12-22 | 2022-05-10 | Applied Materials, Inc. | Chamber conditioning and removal processes |
US10854426B2 (en) | 2018-01-08 | 2020-12-01 | Applied Materials, Inc. | Metal recess for semiconductor structures |
US10679870B2 (en) | 2018-02-15 | 2020-06-09 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus |
US10964512B2 (en) | 2018-02-15 | 2021-03-30 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus and methods |
US10319600B1 (en) | 2018-03-12 | 2019-06-11 | Applied Materials, Inc. | Thermal silicon etch |
US10699879B2 (en) | 2018-04-17 | 2020-06-30 | Applied Materials, Inc. | Two piece electrode assembly with gap for plasma control |
US10886137B2 (en) | 2018-04-30 | 2021-01-05 | Applied Materials, Inc. | Selective nitride removal |
US10872778B2 (en) | 2018-07-06 | 2020-12-22 | Applied Materials, Inc. | Systems and methods utilizing solid-phase etchants |
US10755941B2 (en) | 2018-07-06 | 2020-08-25 | Applied Materials, Inc. | Self-limiting selective etching systems and methods |
US10672642B2 (en) | 2018-07-24 | 2020-06-02 | Applied Materials, Inc. | Systems and methods for pedestal configuration |
WO2020033097A1 (en) * | 2018-08-06 | 2020-02-13 | Applied Materials, Inc. | Liner for processing chamber |
CN110828272B (zh) * | 2018-08-09 | 2022-09-16 | 北京北方华创微电子装备有限公司 | 腔室内衬、下电极装置和半导体处理设备 |
JP7089987B2 (ja) * | 2018-08-22 | 2022-06-23 | 株式会社日本製鋼所 | 原子層堆積装置 |
US10892198B2 (en) | 2018-09-14 | 2021-01-12 | Applied Materials, Inc. | Systems and methods for improved performance in semiconductor processing |
US11049755B2 (en) | 2018-09-14 | 2021-06-29 | Applied Materials, Inc. | Semiconductor substrate supports with embedded RF shield |
US11062887B2 (en) | 2018-09-17 | 2021-07-13 | Applied Materials, Inc. | High temperature RF heater pedestals |
US11417534B2 (en) | 2018-09-21 | 2022-08-16 | Applied Materials, Inc. | Selective material removal |
US11682560B2 (en) | 2018-10-11 | 2023-06-20 | Applied Materials, Inc. | Systems and methods for hafnium-containing film removal |
US11121002B2 (en) | 2018-10-24 | 2021-09-14 | Applied Materials, Inc. | Systems and methods for etching metals and metal derivatives |
CN109273342A (zh) * | 2018-11-02 | 2019-01-25 | 北京北方华创微电子装备有限公司 | 内衬组件、反应腔室及半导体加工设备 |
SG11202104119PA (en) * | 2018-11-02 | 2021-05-28 | Beijing Naura Microelectronics Equipment Co Ltd | Liner assembly, reaction chamber and semiconductor processing apparatus |
US11437242B2 (en) | 2018-11-27 | 2022-09-06 | Applied Materials, Inc. | Selective removal of silicon-containing materials |
JP1638504S (ko) * | 2018-12-06 | 2019-08-05 | ||
US11721527B2 (en) | 2019-01-07 | 2023-08-08 | Applied Materials, Inc. | Processing chamber mixing systems |
US10920319B2 (en) | 2019-01-11 | 2021-02-16 | Applied Materials, Inc. | Ceramic showerheads with conductive electrodes |
US20220139661A1 (en) * | 2019-04-01 | 2022-05-05 | One Semicon. Co., Ltd. | Manufacturing method of plasma focus ring for semiconductor etching apparatus |
US20210249239A1 (en) * | 2020-02-10 | 2021-08-12 | Applied Materials, Inc. | Methods and apparatus for improving flow uniformity in a process chamber |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5304248A (en) * | 1990-12-05 | 1994-04-19 | Applied Materials, Inc. | Passive shield for CVD wafer processing which provides frontside edge exclusion and prevents backside depositions |
JP3566740B2 (ja) * | 1992-09-30 | 2004-09-15 | アプライド マテリアルズ インコーポレイテッド | 全ウエハデポジション用装置 |
US5271963A (en) | 1992-11-16 | 1993-12-21 | Materials Research Corporation | Elimination of low temperature ammonia salt in TiCl4 NH3 CVD reaction |
US5614055A (en) * | 1993-08-27 | 1997-03-25 | Applied Materials, Inc. | High density plasma CVD and etching reactor |
US5641375A (en) | 1994-08-15 | 1997-06-24 | Applied Materials, Inc. | Plasma etching reactor with surface protection means against erosion of walls |
US5891350A (en) | 1994-12-15 | 1999-04-06 | Applied Materials, Inc. | Adjusting DC bias voltage in plasma chambers |
US5605637A (en) | 1994-12-15 | 1997-02-25 | Applied Materials Inc. | Adjustable dc bias control in a plasma reactor |
US5846332A (en) * | 1996-07-12 | 1998-12-08 | Applied Materials, Inc. | Thermally floating pedestal collar in a chemical vapor deposition chamber |
US5882411A (en) * | 1996-10-21 | 1999-03-16 | Applied Materials, Inc. | Faceplate thermal choke in a CVD plasma reactor |
US5977519A (en) * | 1997-02-28 | 1999-11-02 | Applied Komatsu Technology, Inc. | Heating element with a diamond sealing material |
US5900064A (en) * | 1997-05-01 | 1999-05-04 | Applied Materials, Inc. | Plasma process chamber |
-
1998
- 1998-09-30 US US09/163,722 patent/US6170429B1/en not_active Expired - Lifetime
-
1999
- 1999-09-28 EP EP99969840A patent/EP1125317B1/en not_active Expired - Lifetime
- 1999-09-28 TW TW088116580A patent/TW420847B/zh not_active IP Right Cessation
- 1999-09-28 KR KR10-2001-7003776A patent/KR100463070B1/ko active IP Right Grant
- 1999-09-28 WO PCT/US1999/022488 patent/WO2000019495A2/en active IP Right Grant
- 1999-09-28 JP JP2000572904A patent/JP2003505855A/ja active Pending
- 1999-09-28 AU AU11988/00A patent/AU1198800A/en not_active Abandoned
- 1999-09-28 CN CNB998154725A patent/CN1152414C/zh not_active Expired - Lifetime
- 1999-09-28 DE DE69939326T patent/DE69939326D1/de not_active Expired - Lifetime
-
2000
- 2000-11-14 US US09/713,516 patent/US6277237B1/en not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20130115099A (ko) * | 2010-05-21 | 2013-10-21 | 램 리써치 코포레이션 | 플라즈마 프로세싱 장치들을 위한 이동가능 챔버 라이너 플라즈마 한정 스크린 조합 |
KR20210076973A (ko) * | 2018-11-12 | 2021-06-24 | 장쑤 루벤 인스트루먼츠 컴퍼니 리미티드 | 반응 챔버 라이닝 |
Also Published As
Publication number | Publication date |
---|---|
TW420847B (en) | 2001-02-01 |
CN1333917A (zh) | 2002-01-30 |
WO2000019495A2 (en) | 2000-04-06 |
JP2003505855A (ja) | 2003-02-12 |
WO2000019495A3 (en) | 2000-05-25 |
EP1125317A2 (en) | 2001-08-22 |
US6277237B1 (en) | 2001-08-21 |
KR100463070B1 (ko) | 2004-12-23 |
EP1125317B1 (en) | 2008-08-13 |
DE69939326D1 (de) | 2008-09-25 |
AU1198800A (en) | 2000-04-17 |
CN1152414C (zh) | 2004-06-02 |
US6170429B1 (en) | 2001-01-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100463070B1 (ko) | 반도체공정 체임버용 체임버라이너 | |
US6123804A (en) | Sectional clamp ring | |
JP4294478B2 (ja) | プラズマチャンバの懸架式ガス分配マニホールド | |
US6219219B1 (en) | Cathode assembly containing an electrostatic chuck for retaining a wafer in a semiconductor wafer processing system | |
JP4991286B2 (ja) | 処理中の基板裏面堆積を減らす方法および装置。 | |
TWI501288B (zh) | 電漿處理設備用之可動式腔室襯墊電漿侷限隔屏組合 | |
US8117986B2 (en) | Apparatus for an improved deposition shield in a plasma processing system | |
US7789963B2 (en) | Chuck pedestal shield | |
US20040035532A1 (en) | Etching apparatus for use in manufacturing a semiconductor device and shield ring for upper electrode thereof | |
KR20010029141A (ko) | 포커스 링을 갖는 반도체 웨이퍼 제조 장치 | |
KR101480738B1 (ko) | 환형 배플 | |
KR20080108208A (ko) | 가스 분배 장치 및 그 가스 분배 장치를 포함하는 챔버 | |
KR20180122295A (ko) | 수동 방식으로 동작되는 경우에 접지에 대한 제어가능한 임피던스를 가능하게 하고 능동적으로 전력공급되는 경우에 플라즈마로의 대칭적인 rf 전력 입력을 가능하게 하는 대칭적인 피드 구조 및 드라이브를 갖는 보조 전극을 사용하여 플라즈마 프로세싱 챔버에서 웨이퍼 에지 시스를 조절하기 위한 방법 | |
KR20010032700A (ko) | 프로세싱 챔버 및 플라즈마 구속방법 | |
US5520142A (en) | Decompression container | |
WO2000010192A1 (en) | Plasma density and etch rate enhancing semiconductor processing chamber | |
CN114303226A (zh) | 用于处理腔室的高传导性下部屏蔽件 | |
JPH0922934A (ja) | 処理中の基板上にプラズマを集中するための装置及び方法 | |
KR102582853B1 (ko) | 반응 챔버 라이닝 | |
CN114342038A (zh) | 用于工艺腔室的高导通内部屏蔽物 | |
US11670493B2 (en) | Isolator ring clamp and physical vapor deposition chamber incorporating same | |
CN113078091A (zh) | 一种晶圆吸盘保护装置及半导体制造设备 | |
KR20040080521A (ko) | 건식 식각 장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20121127 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20131126 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20141125 Year of fee payment: 11 |
|
FPAY | Annual fee payment |
Payment date: 20151125 Year of fee payment: 12 |
|
FPAY | Annual fee payment |
Payment date: 20161128 Year of fee payment: 13 |
|
FPAY | Annual fee payment |
Payment date: 20171130 Year of fee payment: 14 |
|
FPAY | Annual fee payment |
Payment date: 20181127 Year of fee payment: 15 |