DE69938806D1 - Solarzelle mit Vertiefungen im Substrat und deren Herstellungsverfahren - Google Patents
Solarzelle mit Vertiefungen im Substrat und deren HerstellungsverfahrenInfo
- Publication number
- DE69938806D1 DE69938806D1 DE69938806T DE69938806T DE69938806D1 DE 69938806 D1 DE69938806 D1 DE 69938806D1 DE 69938806 T DE69938806 T DE 69938806T DE 69938806 T DE69938806 T DE 69938806T DE 69938806 D1 DE69938806 D1 DE 69938806D1
- Authority
- DE
- Germany
- Prior art keywords
- recesses
- substrate
- solar cell
- production process
- production
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30608—Anisotropic liquid etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10188361A JP2000022185A (ja) | 1998-07-03 | 1998-07-03 | 太陽電池セル及びその製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE69938806D1 true DE69938806D1 (de) | 2008-07-10 |
Family
ID=16222285
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69938806T Expired - Lifetime DE69938806D1 (de) | 1998-07-03 | 1999-07-01 | Solarzelle mit Vertiefungen im Substrat und deren Herstellungsverfahren |
Country Status (4)
Country | Link |
---|---|
US (1) | US6127623A (de) |
EP (1) | EP0969519B1 (de) |
JP (1) | JP2000022185A (de) |
DE (1) | DE69938806D1 (de) |
Families Citing this family (91)
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JP3619053B2 (ja) * | 1999-05-21 | 2005-02-09 | キヤノン株式会社 | 光電変換装置の製造方法 |
US6329296B1 (en) * | 2000-08-09 | 2001-12-11 | Sandia Corporation | Metal catalyst technique for texturing silicon solar cells |
AUPR174800A0 (en) * | 2000-11-29 | 2000-12-21 | Australian National University, The | Semiconductor processing |
JP2004518663A (ja) * | 2000-12-18 | 2004-06-24 | トラスティーズ オブ プリンストン ユニバーシティ | 非対称なパルスフィールド電気泳動を使用した巨大分子の分画 |
JP4713752B2 (ja) * | 2000-12-28 | 2011-06-29 | 財団法人国際科学振興財団 | 半導体装置およびその製造方法 |
CA2370731A1 (en) * | 2001-02-07 | 2002-08-07 | Ebara Corporation | Solar cell and method of manufacturing same |
EP1461834A4 (de) * | 2001-11-29 | 2010-06-09 | Origin Energy Solar Pty Ltd | Halbleiter-texturierungsprozess |
US6660928B1 (en) | 2002-04-02 | 2003-12-09 | Essential Research, Inc. | Multi-junction photovoltaic cell |
JP2004319800A (ja) * | 2003-04-17 | 2004-11-11 | Canon Inc | 太陽電池モジュール |
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US20050148198A1 (en) * | 2004-01-05 | 2005-07-07 | Technion Research & Development Foundation Ltd. | Texturing a semiconductor material using negative potential dissolution (NPD) |
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DE102005027799B4 (de) * | 2005-06-16 | 2007-09-27 | Saint-Gobain Glass Deutschland Gmbh | Verfahren zum Herstellen einer transparenten Scheibe mit einer Oberflächenstruktur und Vorrichtung zum Durchführen des Verfahrens |
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EP0742959B1 (de) * | 1993-07-29 | 2001-11-14 | Gerhard Willeke | Verfahren zur Herstellung einer Solarzelle, sowie nach diesem verfahren hergestellte Solarzelle |
JP3079870B2 (ja) * | 1993-11-19 | 2000-08-21 | トヨタ自動車株式会社 | 逆ピラミッド型テクスチャーの形成方法 |
US5792280A (en) * | 1994-05-09 | 1998-08-11 | Sandia Corporation | Method for fabricating silicon cells |
IT1281359B1 (it) * | 1995-09-26 | 1998-02-18 | Fiat Ricerche | Superficie anti-riflettente a rugosita' predeterminata, particolarmente per plance di autoveicoli |
-
1998
- 1998-07-03 JP JP10188361A patent/JP2000022185A/ja active Pending
-
1999
- 1999-06-29 US US09/342,505 patent/US6127623A/en not_active Expired - Lifetime
- 1999-07-01 DE DE69938806T patent/DE69938806D1/de not_active Expired - Lifetime
- 1999-07-01 EP EP99112564A patent/EP0969519B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP2000022185A (ja) | 2000-01-21 |
EP0969519A2 (de) | 2000-01-05 |
EP0969519B1 (de) | 2008-05-28 |
US6127623A (en) | 2000-10-03 |
EP0969519A3 (de) | 2000-11-08 |
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