DE69908053D1 - Leistungsmodulsubstrat sowie sein herstellungsverfahren, und halbleitervorrichtung mit dem substrat - Google Patents

Leistungsmodulsubstrat sowie sein herstellungsverfahren, und halbleitervorrichtung mit dem substrat

Info

Publication number
DE69908053D1
DE69908053D1 DE69908053T DE69908053T DE69908053D1 DE 69908053 D1 DE69908053 D1 DE 69908053D1 DE 69908053 T DE69908053 T DE 69908053T DE 69908053 T DE69908053 T DE 69908053T DE 69908053 D1 DE69908053 D1 DE 69908053D1
Authority
DE
Germany
Prior art keywords
substrate
manufacturing
semiconductor device
power module
module substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69908053T
Other languages
English (en)
Other versions
DE69908053T2 (de
Inventor
Toshiyuki Nagase
Yoshiyuki Nagatomo
Kazuaki Kubo
Shoichi Shimamura
Koichi Goshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Materials Corp
Original Assignee
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Application granted granted Critical
Publication of DE69908053D1 publication Critical patent/DE69908053D1/de
Publication of DE69908053T2 publication Critical patent/DE69908053T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
    • H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
    • H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
    • H01L2023/4037—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws characterised by thermal path or place of attachment of heatsink
    • H01L2023/4056—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws characterised by thermal path or place of attachment of heatsink heatsink to additional heatsink
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
    • H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
    • H01L2023/4075—Mechanical elements
    • H01L2023/4087—Mounting accessories, interposers, clamping or screwing parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
DE69908053T 1998-09-22 1999-09-22 Leistungsmodulsubstrat sowie sein herstellungsverfahren, und halbleitervorrichtung mit dem substrat Expired - Lifetime DE69908053T2 (de)

Applications Claiming Priority (12)

Application Number Priority Date Filing Date Title
JP26771398 1998-09-22
JP26771298 1998-09-22
JP26771398 1998-09-22
JP26771298 1998-09-22
JP35279798 1998-12-11
JP35279798 1998-12-11
JP2955199 1999-02-08
JP2955199 1999-02-08
JP13866299 1999-05-19
JP13866299 1999-05-19
JP23505999 1999-08-23
JP23505999A JP3864282B2 (ja) 1998-09-22 1999-08-23 パワーモジュール用基板及びその製造方法並びにこの基板を用いた半導体装置

Publications (2)

Publication Number Publication Date
DE69908053D1 true DE69908053D1 (de) 2003-06-26
DE69908053T2 DE69908053T2 (de) 2004-03-04

Family

ID=27549468

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69908053T Expired - Lifetime DE69908053T2 (de) 1998-09-22 1999-09-22 Leistungsmodulsubstrat sowie sein herstellungsverfahren, und halbleitervorrichtung mit dem substrat

Country Status (4)

Country Link
US (1) US6483185B1 (de)
EP (1) EP0989606B1 (de)
JP (1) JP3864282B2 (de)
DE (1) DE69908053T2 (de)

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JP3919398B2 (ja) * 1999-10-27 2007-05-23 三菱電機株式会社 半導体モジュール
EP1315205A4 (de) * 2000-08-09 2009-04-01 Mitsubishi Materials Corp Leistungsmodul und leistungsmodul mit kühlkörper
DE20115922U1 (de) * 2001-01-11 2002-01-17 Siemens AG, 80333 München Kunststoff-Schaltplatte eines hydraulischen Kraftfahrzeug-Getriebesteuergerätes
JP4668432B2 (ja) * 2001-02-16 2011-04-13 電気化学工業株式会社 電子機器搭載用基板、ベース板一体型セラミックス回路基板、及び、それらの製法
JP4213387B2 (ja) * 2002-01-10 2009-01-21 株式会社日立国際電気 超伝導回路の実装構造
WO2003090277A1 (en) * 2002-04-19 2003-10-30 Mitsubishi Materials Corporation Circuit board, process for producing the same and power module
JP2004192720A (ja) * 2002-12-11 2004-07-08 Sankyo Seiki Mfg Co Ltd 光ヘッド装置
US20040238947A1 (en) * 2003-05-28 2004-12-02 Intel Corporation Package and method for attaching an integrated heat spreader
DE10329102A1 (de) * 2003-06-27 2005-01-27 eupec Europäische Gesellschaft für Leistungshalbleiter mbH Halbleitermodul
JP4664816B2 (ja) * 2003-09-25 2011-04-06 株式会社東芝 セラミック回路基板、その製造方法およびパワーモジュール
US20050083655A1 (en) * 2003-10-15 2005-04-21 Visteon Global Technologies, Inc. Dielectric thermal stack for the cooling of high power electronics
TWI236741B (en) * 2003-11-05 2005-07-21 Cyntec Co Ltd Chip package and substrate
CN1331217C (zh) * 2003-11-10 2007-08-08 乾坤科技股份有限公司 晶片封装结构及其基板
JP4951932B2 (ja) * 2004-10-25 2012-06-13 三菱マテリアル株式会社 パワーモジュール用基板の製造方法
JP4640170B2 (ja) * 2005-12-28 2011-03-02 株式会社豊田自動織機 半田付け方法及び半導体モジュールの製造方法並びに半田付け装置
DE102006006175A1 (de) * 2006-02-10 2007-08-23 Ecpe Engineering Center For Power Electronics Gmbh Leistungselektronikanordnung
US9064737B2 (en) * 2007-11-13 2015-06-23 Siemens Aktiengesellschaft Power semiconductor module
RU2462787C2 (ru) * 2007-11-13 2012-09-27 Сименс Акциенгезелльшафт Модуль силовых полупроводниковых приборов
JP4747315B2 (ja) * 2007-11-19 2011-08-17 三菱マテリアル株式会社 パワーモジュール用基板及びパワーモジュール
JP2009130048A (ja) * 2007-11-21 2009-06-11 Elpida Memory Inc 半導体装置及び電子装置
US20090321043A1 (en) * 2008-06-26 2009-12-31 Feng-Chang Wang Heat absorbing device
JP4708459B2 (ja) * 2008-07-29 2011-06-22 日立オートモティブシステムズ株式会社 電力変換装置
JP5707896B2 (ja) * 2010-11-24 2015-04-30 三菱マテリアル株式会社 ヒートシンク付パワーモジュール用基板、パワーモジュール及びパワーモジュール用基板の製造方法
JP2013183023A (ja) * 2012-03-01 2013-09-12 Toyota Industries Corp 電力変換装置
JP2013183022A (ja) * 2012-03-01 2013-09-12 Toyota Industries Corp 半導体装置および半導体装置の製造方法
JP5974880B2 (ja) * 2012-12-12 2016-08-23 三菱電機株式会社 半導体装置及びその製造方法
CN103426833B (zh) * 2013-08-06 2016-03-02 深圳市依思普林科技有限公司 压接式功率模块
DE102013219245A1 (de) * 2013-09-25 2015-03-26 Siemens Aktiengesellschaft Leistungsmodul mit Einfassung
US9412518B2 (en) * 2013-12-18 2016-08-09 Caterpillar Inc. Method and apparatus for mounting a large capacitor
US10629513B2 (en) * 2015-06-04 2020-04-21 Eaton Intelligent Power Limited Ceramic plated materials for electrical isolation and thermal transfer
JP6696442B2 (ja) * 2017-01-12 2020-05-20 三菱電機株式会社 半導体モジュール
CN107369741A (zh) * 2017-07-13 2017-11-21 东莞市凯昶德电子科技股份有限公司 带一体式金属围坝的led支架模组及其制备方法
CN109742057B (zh) * 2018-09-21 2021-05-14 华为机器有限公司 功率器件及其基底、功率器件组件、射频模块和基站
CN109300868B (zh) * 2018-10-23 2024-06-11 重庆中车四方所智能装备技术有限公司 一种基于陶瓷片的绝缘导热散热结构
JP7045978B2 (ja) * 2018-12-07 2022-04-01 三菱電機株式会社 半導体装置および電力変換装置
US11107962B2 (en) * 2018-12-18 2021-08-31 Soulnano Limited UV LED array with power interconnect and heat sink
CN110581110A (zh) * 2019-08-16 2019-12-17 珠海零边界集成电路有限公司 一种功率模块组件
CN111370378B (zh) * 2020-03-17 2022-08-05 电子科技大学 一种芯片散热器
CN114258259B (zh) * 2021-12-01 2024-08-20 武汉船用电力推进装置研究所（中国船舶重工集团公司第七一二研究所） 一种水冷组件的安装工艺
CN117410251A (zh) * 2023-08-31 2024-01-16 海信家电集团股份有限公司 智能功率模块和电子设备

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Also Published As

Publication number Publication date
EP0989606B1 (de) 2003-05-21
JP3864282B2 (ja) 2006-12-27
DE69908053T2 (de) 2004-03-04
EP0989606A3 (de) 2000-07-05
US6483185B1 (en) 2002-11-19
EP0989606A2 (de) 2000-03-29
JP2001035982A (ja) 2001-02-09

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Legal Events

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8364 No opposition during term of opposition