DE69938583T2 - Verdrahtungsänderungen in integrierten schaltungen mittels gas-unterstütztem ätzen mit einem fokussierten ionenstrahl (fib) - Google Patents

Verdrahtungsänderungen in integrierten schaltungen mittels gas-unterstütztem ätzen mit einem fokussierten ionenstrahl (fib) Download PDF

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Publication number
DE69938583T2
DE69938583T2 DE69938583T DE69938583T DE69938583T2 DE 69938583 T2 DE69938583 T2 DE 69938583T2 DE 69938583 T DE69938583 T DE 69938583T DE 69938583 T DE69938583 T DE 69938583T DE 69938583 T2 DE69938583 T2 DE 69938583T2
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DE
Germany
Prior art keywords
conductor
dielectric
ion beam
gas
etching
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69938583T
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German (de)
English (en)
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DE69938583D1 (de
Inventor
Clive D. Chandler
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FEI Co
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FEI Co
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Publication date
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Priority claimed from PCT/EP1999/007807 external-priority patent/WO2000022670A1/en
Publication of DE69938583D1 publication Critical patent/DE69938583D1/de
Application granted granted Critical
Publication of DE69938583T2 publication Critical patent/DE69938583T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • H01L21/76892—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching for microworking, e.g. etching of gratings, trimming of electrical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H01J2237/31745—Etching microareas for preparing specimen to be viewed in microscopes or analyzed in microanalysers
DE69938583T 1998-10-09 1999-10-08 Verdrahtungsänderungen in integrierten schaltungen mittels gas-unterstütztem ätzen mit einem fokussierten ionenstrahl (fib) Expired - Lifetime DE69938583T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US248650 1981-03-27
US09/169,566 US6268608B1 (en) 1998-10-09 1998-10-09 Method and apparatus for selective in-situ etching of inter dielectric layers
US169566 1998-10-09
US09/248,650 US6211527B1 (en) 1998-10-09 1999-02-11 Method for device editing
PCT/EP1999/007807 WO2000022670A1 (en) 1998-10-09 1999-10-08 Integrated circuit rewiring using gas-assisted fib etching

Publications (2)

Publication Number Publication Date
DE69938583D1 DE69938583D1 (de) 2008-06-05
DE69938583T2 true DE69938583T2 (de) 2009-06-10

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
DE69938583T Expired - Lifetime DE69938583T2 (de) 1998-10-09 1999-10-08 Verdrahtungsänderungen in integrierten schaltungen mittels gas-unterstütztem ätzen mit einem fokussierten ionenstrahl (fib)

Country Status (2)

Country Link
US (2) US6268608B1 (US06211527-20010403-C00003.png)
DE (1) DE69938583T2 (US06211527-20010403-C00003.png)

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Publication number Publication date
DE69938583D1 (de) 2008-06-05
US6211527B1 (en) 2001-04-03
US6268608B1 (en) 2001-07-31

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