DE69933305D1 - Apparat für Extrem-UV-Lithographie mit einer Halbleiterplattenkammer und einem Gasvorhang - Google Patents
Apparat für Extrem-UV-Lithographie mit einer Halbleiterplattenkammer und einem GasvorhangInfo
- Publication number
- DE69933305D1 DE69933305D1 DE69933305T DE69933305T DE69933305D1 DE 69933305 D1 DE69933305 D1 DE 69933305D1 DE 69933305 T DE69933305 T DE 69933305T DE 69933305 T DE69933305 T DE 69933305T DE 69933305 D1 DE69933305 D1 DE 69933305D1
- Authority
- DE
- Germany
- Prior art keywords
- lithography
- extreme
- gas curtain
- plate chamber
- semiconductor plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
Landscapes
- Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Environmental & Geological Engineering (AREA)
- Atmospheric Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/187,911 US6198792B1 (en) | 1998-11-06 | 1998-11-06 | Wafer chamber having a gas curtain for extreme-UV lithography |
US187911 | 1998-11-06 | ||
PCT/US1999/025023 WO2000028384A1 (en) | 1998-11-06 | 1999-10-27 | Wafer chamber having a gas curtain for extreme-uv lithography |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69933305D1 true DE69933305D1 (de) | 2006-11-02 |
DE69933305T2 DE69933305T2 (de) | 2007-04-19 |
Family
ID=22690997
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69933305T Expired - Lifetime DE69933305T2 (de) | 1998-11-06 | 1999-10-27 | Apparat für Extrem-UV-Lithographie mit einer Halbleiterplattenkammer und einem Gasvorhang |
Country Status (7)
Country | Link |
---|---|
US (1) | US6198792B1 (de) |
EP (1) | EP1127294B1 (de) |
JP (1) | JP4353640B2 (de) |
KR (1) | KR100676842B1 (de) |
AU (1) | AU1133400A (de) |
DE (1) | DE69933305T2 (de) |
WO (1) | WO2000028384A1 (de) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU4653999A (en) * | 1999-07-16 | 2001-02-05 | Nikon Corporation | Exposure method and system |
US6384473B1 (en) * | 2000-05-16 | 2002-05-07 | Sandia Corporation | Microelectronic device package with an integral window |
TW548524B (en) * | 2000-09-04 | 2003-08-21 | Asm Lithography Bv | Lithographic projection apparatus, device manufacturing method and device manufactured thereby |
US6924492B2 (en) * | 2000-12-22 | 2005-08-02 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method, and device manufactured thereby |
US6714624B2 (en) * | 2001-09-18 | 2004-03-30 | Euv Llc | Discharge source with gas curtain for protecting optics from particles |
US7050149B2 (en) * | 2002-06-11 | 2006-05-23 | Nikon Corporation | Exposure apparatus and exposure method |
JP2005057154A (ja) * | 2003-08-07 | 2005-03-03 | Canon Inc | 露光装置 |
WO2005031169A1 (en) * | 2003-09-26 | 2005-04-07 | The Boc Group Plc | Detection of contaminants within fluid pumped by a vacuum pump |
JPWO2005083759A1 (ja) * | 2004-02-27 | 2007-08-09 | 株式会社ニコン | 露光装置、及び微細パターンを有するデバイスの製造方法 |
KR101123187B1 (ko) | 2004-03-31 | 2012-03-19 | 에이에스엠엘 네델란즈 비.브이. | 단파 방사의 생성 동안 방사원에 의해 생성되는 입자를제거하기 위한 방법 및 장치 |
JP2006269942A (ja) * | 2005-03-25 | 2006-10-05 | Canon Inc | 露光装置及びデバイス製造方法 |
JP4922638B2 (ja) * | 2005-03-29 | 2012-04-25 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置、シール、デバイス製造方法、コンピュータプログラム、およびデータ記録媒体 |
US20070085984A1 (en) * | 2005-10-18 | 2007-04-19 | Asml Netherlands B.V. | Lithographic projection apparatus, device manufacturing method and device manufactured thereby |
DE102005048670B3 (de) * | 2005-10-07 | 2007-05-24 | Xtreme Technologies Gmbh | Anordnung zur Unterdrückung von unerwünschten Spektralanteilen bei einer plasmabasierten EUV-Strahlungsquelle |
JP2007281142A (ja) | 2006-04-05 | 2007-10-25 | Canon Inc | 露光装置及び方法、並びに、デバイス製造方法 |
JP2008034770A (ja) * | 2006-08-01 | 2008-02-14 | Canon Inc | 露光装置 |
US7671348B2 (en) | 2007-06-26 | 2010-03-02 | Advanced Micro Devices, Inc. | Hydrocarbon getter for lithographic exposure tools |
NL1036153A1 (nl) | 2007-11-08 | 2009-05-11 | Asml Netherlands Bv | Method and system for determining a suppression factor of a suppression system and a lithographic apparatus. |
JP5339742B2 (ja) | 2008-03-04 | 2013-11-13 | ウシオ電機株式会社 | 極端紫外光が出射する装置と極端紫外光が導入される装置との接続装置 |
NL1036957A1 (nl) * | 2008-06-13 | 2009-12-15 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method. |
DE102009016319A1 (de) | 2009-04-06 | 2010-10-14 | Carl Zeiss Smt Ag | Verfahren zur Kontaminationsvermeidung und EUV-Lithographieanlage |
JP2012114140A (ja) * | 2010-11-22 | 2012-06-14 | Renesas Electronics Corp | 露光方法および露光装置 |
JP5912264B2 (ja) * | 2011-02-28 | 2016-04-27 | 日本発條株式会社 | レーザー加工方法及び装置 |
KR102098558B1 (ko) | 2012-10-23 | 2020-04-08 | 삼성전자 주식회사 | 리소그래피 장치 및 방법과 스테이지 시스템 |
US9389180B2 (en) * | 2013-02-15 | 2016-07-12 | Kla-Tencor Corporation | Methods and apparatus for use with extreme ultraviolet light having contamination protection |
TWI746907B (zh) * | 2017-12-05 | 2021-11-21 | 日商斯庫林集團股份有限公司 | 煙霧判定方法、基板處理方法及基板處理裝置 |
CN111500005A (zh) * | 2019-01-30 | 2020-08-07 | 家登精密工业股份有限公司 | 环烯烃组合物及应用其的半导体容器 |
CN111736432A (zh) * | 2020-06-15 | 2020-10-02 | 上海集成电路研发中心有限公司 | 一种阻隔光阻放气污染的装置 |
EP4386480A1 (de) * | 2022-12-15 | 2024-06-19 | ASML Netherlands B.V. | Spülsystem und verfahren für eine lithografische vorrichtung |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4185202A (en) | 1977-12-05 | 1980-01-22 | Bell Telephone Laboratories, Incorporated | X-ray lithography |
US4692934A (en) | 1984-11-08 | 1987-09-08 | Hampshire Instruments | X-ray lithography system |
US4648106A (en) * | 1984-11-21 | 1987-03-03 | Micronix Corporation | Gas control for X-ray lithographic system |
US5267292A (en) | 1988-10-05 | 1993-11-30 | Canon Kabushiki Kaisha | X-ray exposure apparatus |
JP3127511B2 (ja) | 1991-09-19 | 2001-01-29 | 株式会社日立製作所 | 露光装置および半導体装置の製造方法 |
EP0957402B1 (de) | 1998-05-15 | 2006-09-20 | ASML Netherlands B.V. | Lithographische Vorrichtung |
KR100532968B1 (ko) * | 2004-04-22 | 2005-12-01 | 주식회사 하이닉스반도체 | 반도체 장치의 패턴 형성 방법 |
-
1998
- 1998-11-06 US US09/187,911 patent/US6198792B1/en not_active Expired - Lifetime
-
1999
- 1999-10-27 WO PCT/US1999/025023 patent/WO2000028384A1/en active IP Right Grant
- 1999-10-27 AU AU11334/00A patent/AU1133400A/en not_active Abandoned
- 1999-10-27 KR KR1020017005524A patent/KR100676842B1/ko active IP Right Grant
- 1999-10-27 EP EP99955163A patent/EP1127294B1/de not_active Expired - Lifetime
- 1999-10-27 DE DE69933305T patent/DE69933305T2/de not_active Expired - Lifetime
- 1999-10-27 JP JP2000581507A patent/JP4353640B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR20010075675A (ko) | 2001-08-09 |
EP1127294A1 (de) | 2001-08-29 |
AU1133400A (en) | 2000-05-29 |
JP4353640B2 (ja) | 2009-10-28 |
KR100676842B1 (ko) | 2007-01-31 |
EP1127294B1 (de) | 2006-09-20 |
WO2000028384A1 (en) | 2000-05-18 |
US6198792B1 (en) | 2001-03-06 |
DE69933305T2 (de) | 2007-04-19 |
JP2002529927A (ja) | 2002-09-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |