DE69930832D1 - Benutzung einer zusammensetzung für eine antireflexunterschicht - Google Patents
Benutzung einer zusammensetzung für eine antireflexunterschichtInfo
- Publication number
- DE69930832D1 DE69930832D1 DE69930832T DE69930832T DE69930832D1 DE 69930832 D1 DE69930832 D1 DE 69930832D1 DE 69930832 T DE69930832 T DE 69930832T DE 69930832 T DE69930832 T DE 69930832T DE 69930832 D1 DE69930832 D1 DE 69930832D1
- Authority
- DE
- Germany
- Prior art keywords
- composition
- reflective layer
- reflective
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D401/00—Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, at least one ring being a six-membered ring with only one nitrogen atom
- C07D401/02—Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, at least one ring being a six-membered ring with only one nitrogen atom containing two hetero rings
- C07D401/04—Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, at least one ring being a six-membered ring with only one nitrogen atom containing two hetero rings directly linked by a ring-member-to-ring-member bond
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D471/00—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00
- C07D471/02—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00 in which the condensed system contains two hetero rings
- C07D471/04—Ortho-condensed systems
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D487/00—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, not provided for by groups C07D451/00 - C07D477/00
- C07D487/02—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, not provided for by groups C07D451/00 - C07D477/00 in which the condensed system contains two hetero rings
- C07D487/04—Ortho-condensed systems
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D495/00—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms
- C07D495/02—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms in which the condensed system contains two hetero rings
- C07D495/04—Ortho-condensed systems
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F8/00—Chemical modification by after-treatment
- C08F8/28—Condensation with aldehydes or ketones
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K9/00—Tenebrescent materials, i.e. materials for which the range of wavelengths for energy absorption is changed as a result of excitation by some form of energy
- C09K9/02—Organic tenebrescent materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2800/00—Copolymer characterised by the proportions of the comonomers expressed
- C08F2800/10—Copolymer characterised by the proportions of the comonomers expressed as molar percentages
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19517498 | 1998-07-10 | ||
JP19517498 | 1998-07-10 | ||
PCT/JP1999/003333 WO2000003303A1 (fr) | 1998-07-10 | 1999-06-23 | Composition pour film empechant la reflexion de fond et nouveau colorant polymere utilise dans celle-ci |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69930832D1 true DE69930832D1 (de) | 2006-05-24 |
DE69930832T2 DE69930832T2 (de) | 2006-11-30 |
Family
ID=16336684
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69930832T Expired - Lifetime DE69930832T2 (de) | 1998-07-10 | 1999-06-23 | Benutzung einer zusammensetzung für eine antireflexunterschicht |
Country Status (6)
Country | Link |
---|---|
US (1) | US6277750B1 (de) |
EP (1) | EP1046958B1 (de) |
KR (1) | KR20010023776A (de) |
CN (1) | CN1273646A (de) |
DE (1) | DE69930832T2 (de) |
WO (1) | WO2000003303A1 (de) |
Families Citing this family (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000347411A (ja) * | 1999-06-08 | 2000-12-15 | Matsushita Electric Ind Co Ltd | パターン形成材料およびパターン形成方法 |
US6824879B2 (en) | 1999-06-10 | 2004-11-30 | Honeywell International Inc. | Spin-on-glass anti-reflective coatings for photolithography |
EP1190277B1 (de) | 1999-06-10 | 2009-10-07 | AlliedSignal Inc. | Spin-on-glass antireflektionsbeschichtungen aufweisender halbleiter für photolithographie |
US6936405B2 (en) * | 2000-02-22 | 2005-08-30 | Brewer Science Inc. | Organic polymeric antireflective coatings deposited by chemical vapor deposition |
US6420097B1 (en) * | 2000-05-02 | 2002-07-16 | Advanced Micro Devices, Inc. | Hardmask trim process |
US6844270B2 (en) * | 2000-11-26 | 2005-01-18 | Shipley Company, L.L.C. | Polymers and photoresist compositions for short wavelength imaging |
JP3509760B2 (ja) * | 2001-02-08 | 2004-03-22 | 株式会社半導体先端テクノロジーズ | 半導体装置の製造方法 |
US6582861B2 (en) | 2001-03-16 | 2003-06-24 | Applied Materials, Inc. | Method of reshaping a patterned organic photoresist surface |
US6703169B2 (en) | 2001-07-23 | 2004-03-09 | Applied Materials, Inc. | Method of preparing optically imaged high performance photomasks |
WO2003044600A1 (en) | 2001-11-15 | 2003-05-30 | Honeywell International Inc. | Spin-on anti-reflective coatings for photolithography |
US6844131B2 (en) * | 2002-01-09 | 2005-01-18 | Clariant Finance (Bvi) Limited | Positive-working photoimageable bottom antireflective coating |
US7070914B2 (en) * | 2002-01-09 | 2006-07-04 | Az Electronic Materials Usa Corp. | Process for producing an image using a first minimum bottom antireflective coating composition |
US20030215736A1 (en) * | 2002-01-09 | 2003-11-20 | Oberlander Joseph E. | Negative-working photoimageable bottom antireflective coating |
US6783913B2 (en) | 2002-04-05 | 2004-08-31 | Kodak Polychrome Graphics Llc | Polymeric acetal resins containing free radical inhibitors and their use in lithographic printing |
KR100478982B1 (ko) * | 2002-05-02 | 2005-03-25 | 금호석유화학 주식회사 | 신규 산발생제 및 이를 함유한 박막 조성물 |
US6949325B2 (en) * | 2003-09-16 | 2005-09-27 | International Business Machines Corporation | Negative resist composition with fluorosulfonamide-containing polymer |
US20050074688A1 (en) * | 2003-10-03 | 2005-04-07 | Toukhy Medhat A. | Bottom antireflective coatings |
KR20050034887A (ko) * | 2003-10-10 | 2005-04-15 | 삼성전자주식회사 | 전원전압 동기신호 생성 장치 및 방법 |
TW201219350A (en) | 2003-11-17 | 2012-05-16 | Sumitomo Chemical Co | Crosslinkable arylamine compounds |
US8053159B2 (en) | 2003-11-18 | 2011-11-08 | Honeywell International Inc. | Antireflective coatings for via fill and photolithography applications and methods of preparation thereof |
JP3802544B2 (ja) * | 2004-07-29 | 2006-07-26 | 日東電工株式会社 | 位相差板、及び新規ポリマー、及び光学フィルム、及び画像表示装置 |
CN100575368C (zh) * | 2004-08-04 | 2009-12-30 | 积水化学工业株式会社 | 聚乙烯醇缩醛树脂的制造方法、聚乙烯醇缩丁醛树脂、以及被酯化的聚乙烯醇树脂的制造方法 |
US7189640B2 (en) * | 2004-12-02 | 2007-03-13 | United Microelectronics Corp. | Method of forming damascene structures |
WO2007003030A1 (en) * | 2005-06-03 | 2007-01-11 | American Dye Source Inc. | Thermally reactive near-infrared absorbing acetal copolymers, methods of preparation and methods of use |
US7662718B2 (en) * | 2006-03-09 | 2010-02-16 | Micron Technology, Inc. | Trim process for critical dimension control for integrated circuits |
DE102006034240A1 (de) * | 2006-07-25 | 2008-01-31 | Clariant International Limited | Mit polymerisierbarem Coating modifizierte Pigmente, deren Herstellung und Anwendung |
US7759046B2 (en) * | 2006-12-20 | 2010-07-20 | Az Electronic Materials Usa Corp. | Antireflective coating compositions |
US8642246B2 (en) | 2007-02-26 | 2014-02-04 | Honeywell International Inc. | Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof |
KR100886314B1 (ko) * | 2007-06-25 | 2009-03-04 | 금호석유화학 주식회사 | 유기반사방지막용 공중합체 및 이를 포함하는유기반사방지막 조성물 |
US8557877B2 (en) | 2009-06-10 | 2013-10-15 | Honeywell International Inc. | Anti-reflective coatings for optically transparent substrates |
WO2011092028A1 (de) * | 2010-01-29 | 2011-08-04 | Ludwig-Maximilians-Universität München | Nanopartikel und nanotinte |
EP2472329B1 (de) * | 2010-12-31 | 2013-06-05 | Rohm and Haas Electronic Materials LLC | Beschichtungszusammensetzungen zur Verwendung mit einem beschichteten Fotolack |
US8864898B2 (en) | 2011-05-31 | 2014-10-21 | Honeywell International Inc. | Coating formulations for optical elements |
US10544329B2 (en) | 2015-04-13 | 2020-01-28 | Honeywell International Inc. | Polysiloxane formulations and coatings for optoelectronic applications |
KR102662122B1 (ko) * | 2016-06-01 | 2024-04-30 | 주식회사 동진쎄미켐 | 네거티브 톤 현상 공정에 이용되는 유기 반사방지막 형성용 조성물 |
JP6809315B2 (ja) * | 2017-03-15 | 2021-01-06 | 東京エレクトロン株式会社 | 半導体装置の製造方法及び真空処理装置 |
CN106896644B (zh) * | 2017-03-27 | 2020-05-08 | 青岛蓝帆新材料有限公司 | 一种感光性树脂组合物及其应用 |
CN106909024B (zh) * | 2017-03-28 | 2020-03-13 | 辽宁靖帆新材料有限公司 | 一种感光性树脂组合物及其应用 |
US20180364575A1 (en) * | 2017-06-15 | 2018-12-20 | Rohm And Haas Electronic Materials Korea Ltd. | Coating compositions for use with an overcoated photoresist |
KR102389247B1 (ko) * | 2017-06-27 | 2022-04-20 | 동우 화인켐 주식회사 | 하드마스크용 조성물 |
JP7408299B2 (ja) | 2018-06-07 | 2024-01-05 | キヤノン株式会社 | 過酸化水素の検出のための高分子色素および過酸化水素検出用構造体 |
CN109735280B (zh) * | 2019-01-04 | 2020-06-09 | 中国科学技术大学 | 紫外光响应性聚合物粘合剂及其制备方法和用途 |
CN115873175B (zh) * | 2021-09-28 | 2023-09-12 | 上海新阳半导体材料股份有限公司 | 一种duv光刻用底部抗反射涂层及其制备方法和应用 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2269216A (en) * | 1938-01-29 | 1942-01-06 | Eastman Kodak Co | Polyvinyl acetal resin |
US2269217A (en) * | 1938-01-29 | 1942-01-06 | Eastman Kodak Co | Mixed polyvinyl acetal resin |
US2269166A (en) * | 1938-03-22 | 1942-01-06 | Eastman Kodak Co | Polyvinyl acetal resin |
US3148986A (en) * | 1955-08-14 | 1964-09-15 | Agfa Ag | Subbed polycarbonate film base photographic article |
FR1290837A (fr) * | 1960-12-23 | 1962-04-20 | Air Liquide | Nouveaux polymères anthraquinoniques réducto-oxydables, leurs procédés de préparation et leur application à la fabrication de l'eau oxygénée |
GB1482914A (en) * | 1973-07-25 | 1977-08-17 | Babcock & Wilcox Ltd | Semi-permeable polymeric membranes |
DD208473A3 (de) * | 1982-08-02 | 1984-05-02 | Univ Berlin Humboldt | Verfahren zur herstellung anthracen-, aziniumanthracen- und azaanthracensubstituierter oligomerer oder polymerer |
JPS60255805A (ja) * | 1984-05-31 | 1985-12-17 | Sekisui Chem Co Ltd | シクロヘキサンカルボアルデヒド−アセタ−ル化ポリビニルアルコ−ル |
JPS6142507A (ja) * | 1984-08-03 | 1986-03-01 | Sekisui Chem Co Ltd | アルキル化シクロヘキサンカルボアルデヒド−アセタ−ル化ポリビニルアルコ−ル |
DE3644162A1 (de) * | 1986-12-23 | 1988-07-07 | Hoechst Ag | Polyvinylacetal, dieses enthaltendes lichtempfindliches gemisch und daraus hergestelltes aufzeichnungsmaterial |
US6165697A (en) * | 1991-11-15 | 2000-12-26 | Shipley Company, L.L.C. | Antihalation compositions |
US5275907A (en) * | 1992-07-23 | 1994-01-04 | Eastman Kodak Company | Photosensitive compositions and lithographic printing plates containing acid-substituted ternary acetal polymer and copolyester with reduced propensity to blinding |
US5294680A (en) * | 1992-07-24 | 1994-03-15 | International Business Machines Corporation | Polymeric dyes for antireflective coatings |
JPH06192326A (ja) * | 1992-12-25 | 1994-07-12 | Hitachi Ltd | ポリビニルアセタール系樹脂、これを含有する感光性樹脂組成物並びにその用途 |
US5534381A (en) * | 1995-07-06 | 1996-07-09 | Minnesota Mining And Manufacturing Company | Acetal polymers useful in photosensitive compositions |
DE19524851C2 (de) * | 1995-07-07 | 1998-05-07 | Sun Chemical Corp | Acetalpolymere und Verwendung derselben in lichtempfindlichen Zusammensetzungen und für lithographische Druckplatten |
KR100191126B1 (ko) * | 1995-11-28 | 1999-06-15 | 윤덕용 | 비닐4-t-부톡시카르보닐옥시벤잘-비닐 알코올-비닐 아세테이트 공중합체와 비닐 4-t-부톡시카르보닐옥시벤잘-비닐 4-히드록시벤잘-비닐 알코올-비닐 아세테이트 공중합체 및 그들의 제조방법 |
US5886102A (en) * | 1996-06-11 | 1999-03-23 | Shipley Company, L.L.C. | Antireflective coating compositions |
KR100220951B1 (ko) * | 1996-12-20 | 1999-09-15 | 김영환 | 비닐 4-테트라히드로피라닐옥시벤잘-비닐 4-히드록시벤잘-비닐 테트라히드로피라닐에테르-비닐 아세테이트 공중합체, 비닐 4-테트라히드로피라닐옥시벤잘-비닐 테트라히드로피라닐에테르-비닐 아세테이트 공중합체 및 그들의 제조방법 |
JP3852868B2 (ja) * | 1997-02-06 | 2006-12-06 | 富士写真フイルム株式会社 | 反射防止膜材料組成物及びそれを用いたレジストパターン形成方法 |
JP3854367B2 (ja) * | 1997-06-04 | 2006-12-06 | Azエレクトロニックマテリアルズ株式会社 | 光吸収性ポリマー、光吸収膜形成性組成物及び光吸収膜とそれを用いた反射防止膜 |
JP3473887B2 (ja) * | 1997-07-16 | 2003-12-08 | 東京応化工業株式会社 | 反射防止膜形成用組成物及びそれを用いたレジストパターンの形成方法 |
JPH11231535A (ja) * | 1998-02-13 | 1999-08-27 | Mitsubishi Paper Mills Ltd | 平版印刷版 |
-
1999
- 1999-06-23 CN CN99801113A patent/CN1273646A/zh active Pending
- 1999-06-23 DE DE69930832T patent/DE69930832T2/de not_active Expired - Lifetime
- 1999-06-23 US US09/508,624 patent/US6277750B1/en not_active Expired - Fee Related
- 1999-06-23 WO PCT/JP1999/003333 patent/WO2000003303A1/ja active IP Right Grant
- 1999-06-23 KR KR1020007002432A patent/KR20010023776A/ko not_active Application Discontinuation
- 1999-06-23 EP EP99926761A patent/EP1046958B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
CN1273646A (zh) | 2000-11-15 |
WO2000003303A1 (fr) | 2000-01-20 |
EP1046958A1 (de) | 2000-10-25 |
EP1046958A4 (de) | 2000-12-06 |
EP1046958B1 (de) | 2006-04-12 |
DE69930832T2 (de) | 2006-11-30 |
US6277750B1 (en) | 2001-08-21 |
KR20010023776A (ko) | 2001-03-26 |
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