DE69930266D1 - Material zum ziehen von sic-einkristallen und verfahren zur herstellung von sic-einkristallen - Google Patents

Material zum ziehen von sic-einkristallen und verfahren zur herstellung von sic-einkristallen

Info

Publication number
DE69930266D1
DE69930266D1 DE69930266T DE69930266T DE69930266D1 DE 69930266 D1 DE69930266 D1 DE 69930266D1 DE 69930266 T DE69930266 T DE 69930266T DE 69930266 T DE69930266 T DE 69930266T DE 69930266 D1 DE69930266 D1 DE 69930266D1
Authority
DE
Germany
Prior art keywords
sic crystals
pulling
producing
crystals
sic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69930266T
Other languages
English (en)
Other versions
DE69930266T2 (de
Inventor
Nippon Pillar Packing C Tanino
Nippon Pillar Packing Hiramoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissin Electric Co Ltd
Original Assignee
Nissin Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissin Electric Co Ltd filed Critical Nissin Electric Co Ltd
Application granted granted Critical
Publication of DE69930266D1 publication Critical patent/DE69930266D1/de
Publication of DE69930266T2 publication Critical patent/DE69930266T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69930266T 1999-07-30 1999-07-30 Material zum ziehen von sic-einkristallen und verfahren zur herstellung von sic-einkristallen Expired - Fee Related DE69930266T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP1999/004097 WO2001009412A1 (fr) 1999-07-30 1999-07-30 Materiau de tirage de sic monocristallin et procede de preparation associe

Publications (2)

Publication Number Publication Date
DE69930266D1 true DE69930266D1 (de) 2006-05-04
DE69930266T2 DE69930266T2 (de) 2006-11-30

Family

ID=14236354

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69930266T Expired - Fee Related DE69930266T2 (de) 1999-07-30 1999-07-30 Material zum ziehen von sic-einkristallen und verfahren zur herstellung von sic-einkristallen

Country Status (5)

Country Link
US (1) US6436186B1 (de)
EP (1) EP1130137B1 (de)
DE (1) DE69930266T2 (de)
TW (1) TW438720B (de)
WO (1) WO2001009412A1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3087070B1 (ja) * 1999-08-24 2000-09-11 日本ピラー工業株式会社 半導体デバイス製作用単結晶ＳｉＣ複合素材及びその製造方法
JP2003221300A (ja) * 2002-01-29 2003-08-05 Kyocera Corp 単結晶炭化珪素部材の製造方法
US7520930B2 (en) 2002-04-15 2009-04-21 Sumitomo Metal Industries, Ltd. Silicon carbide single crystal and a method for its production
DE60324409D1 (de) * 2002-04-15 2008-12-11 Sumitomo Metal Ind Verfahren zur herstellung eines siliciumcarbid-einkristalles
FR2844095B1 (fr) * 2002-09-03 2005-01-28 Commissariat Energie Atomique Procede de fabrication d'un substrat composite du type sicoi comprenant une etape d'epitaxie
JP5404135B2 (ja) * 2009-03-31 2014-01-29 株式会社ブリヂストン 支持基板、貼り合わせ基板、支持基板の製造方法、及び貼り合わせ基板の製造方法
JP4866935B2 (ja) * 2009-04-28 2012-02-01 株式会社沖データ 立方晶炭化ケイ素単結晶薄膜の製造方法及び半導体装置
JP2011243619A (ja) * 2010-05-14 2011-12-01 Sumitomo Electric Ind Ltd 炭化珪素基板の製造方法、半導体装置の製造方法、炭化珪素基板および半導体装置
JP2011243771A (ja) * 2010-05-19 2011-12-01 Sumitomo Electric Ind Ltd 炭化珪素基板の製造方法、半導体装置の製造方法、炭化珪素基板および半導体装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3296998B2 (ja) 1997-05-23 2002-07-02 日本ピラー工業株式会社 単結晶ＳｉＣおよびその製造方法
JP3003027B2 (ja) * 1997-06-25 2000-01-24 日本ピラー工業株式会社 単結晶ＳｉＣおよびその製造方法
JP3254557B2 (ja) 1997-06-27 2002-02-12 日本ピラー工業株式会社 単結晶ＳｉＣおよびその製造方法
US6153166A (en) * 1997-06-27 2000-11-28 Nippon Pillar Packing Co., Ltd. Single crystal SIC and a method of producing the same
JP3043675B2 (ja) 1997-09-10 2000-05-22 日本ピラー工業株式会社 単結晶ＳｉＣ及びその製造方法

Also Published As

Publication number Publication date
DE69930266T2 (de) 2006-11-30
EP1130137A1 (de) 2001-09-05
EP1130137B1 (de) 2006-03-08
TW438720B (en) 2001-06-07
US6436186B1 (en) 2002-08-20
EP1130137A4 (de) 2003-07-23
WO2001009412A1 (fr) 2001-02-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee