DE69924439D1 - Quantenkaskadierte Lichtemissionsquelle mit vorgespanntem internem elektronischem Potential - Google Patents

Quantenkaskadierte Lichtemissionsquelle mit vorgespanntem internem elektronischem Potential

Info

Publication number
DE69924439D1
DE69924439D1 DE69924439T DE69924439T DE69924439D1 DE 69924439 D1 DE69924439 D1 DE 69924439D1 DE 69924439 T DE69924439 T DE 69924439T DE 69924439 T DE69924439 T DE 69924439T DE 69924439 D1 DE69924439 D1 DE 69924439D1
Authority
DE
Germany
Prior art keywords
light emission
emission source
internal electronic
electronic potential
quantum cascaded
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69924439T
Other languages
English (en)
Other versions
DE69924439T2 (de
Inventor
Frederico Capasso
Cho Alfred Yi
Claire F Gmachl
Albert Lee Hutchinson
Deborah Lee Sivco
Alessandro Tredicucci
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nokia of America Corp
Original Assignee
Lucent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lucent Technologies Inc filed Critical Lucent Technologies Inc
Application granted granted Critical
Publication of DE69924439D1 publication Critical patent/DE69924439D1/de
Publication of DE69924439T2 publication Critical patent/DE69924439T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
    • H01S5/3402—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers intersubband lasers, e.g. transitions within the conduction or valence bands

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
DE69924439T 1998-09-23 1999-09-14 Quantenkaskadierte Lichtemissionsquelle mit vorgespanntem internem elektronischem Potential Expired - Lifetime DE69924439T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US159127 1998-09-23
US09/159,127 US6055254A (en) 1998-09-23 1998-09-23 Quantum cascade light emitter with pre-biased internal electronic potential

Publications (2)

Publication Number Publication Date
DE69924439D1 true DE69924439D1 (de) 2005-05-04
DE69924439T2 DE69924439T2 (de) 2006-02-16

Family

ID=22571183

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69924439T Expired - Lifetime DE69924439T2 (de) 1998-09-23 1999-09-14 Quantenkaskadierte Lichtemissionsquelle mit vorgespanntem internem elektronischem Potential

Country Status (4)

Country Link
US (1) US6055254A (de)
EP (1) EP0989644B1 (de)
JP (1) JP3522606B2 (de)
DE (1) DE69924439T2 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6563852B1 (en) * 2000-05-08 2003-05-13 Lucent Technologies Inc. Self-mode-locking quantum cascade laser
US6560259B1 (en) 2000-05-31 2003-05-06 Applied Optoelectronics, Inc. Spatially coherent surface-emitting, grating coupled quantum cascade laser with unstable resonance cavity
US6463088B1 (en) * 2000-07-07 2002-10-08 Lucent Technologies Inc. Mesa geometry semiconductor light emitter having chalcogenide dielectric coating
EP1195865A1 (de) * 2000-08-31 2002-04-10 Alpes Lasers SA Quantenkaskadierter Laser
US6556604B1 (en) 2000-11-08 2003-04-29 Lucent Technologies Inc. Flat minibands with spatially symmetric wavefunctions in intersubband superlattice light emitters
DE10061234C2 (de) * 2000-12-08 2003-01-16 Paul Drude Inst Fuer Festkoerp Unipolarer Halbleiterlaser ohne Injektionsschichten
US20020097471A1 (en) * 2001-01-22 2002-07-25 Bethea Clyde George Data transmission via direct modulation of a mid-IR laser
EP1249905A1 (de) * 2001-04-10 2002-10-16 Alpes Lasers SA Halbleiterlaser mit Spiegel
JP4576086B2 (ja) * 2001-05-23 2010-11-04 明広 石田 光機能性化合物半導体超格子構造物の製造方法および光機能性多層体の製造方法
US6728282B2 (en) 2001-06-18 2004-04-27 Lucent Technologies Inc. Engineering the gain/loss profile of intersubband optical devices having heterogeneous cascades
US20040208602A1 (en) * 2001-12-01 2004-10-21 James Plante Free space optical communications link tolerant of atmospheric interference
US6788727B2 (en) * 2002-06-13 2004-09-07 Intel Corporation Method and apparatus for tunable wavelength conversion using a bragg grating and a laser in a semiconductor substrate
US20040109692A1 (en) * 2002-12-09 2004-06-10 James Plante FSO communication systems having high performance detectors
US7010010B2 (en) * 2003-06-19 2006-03-07 Lucent Technologies, Inc. Broadband cascade light emitters
JP4250573B2 (ja) * 2004-07-16 2009-04-08 キヤノン株式会社 素子
JP5641667B2 (ja) * 2007-01-18 2014-12-17 浜松ホトニクス株式会社 量子カスケードレーザ
JP5106260B2 (ja) * 2008-06-16 2012-12-26 キヤノン株式会社 カスケードレーザ素子
JP5256268B2 (ja) * 2010-10-21 2013-08-07 シャープ株式会社 太陽電池
US8948226B2 (en) * 2012-08-20 2015-02-03 The Board Of Trustees Of The University Of Illinois Semiconductor device and method for producing light and laser emission
US9088126B2 (en) 2013-10-17 2015-07-21 The Trustees Of Princeton University Single-mode quantum cascade lasers with enhanced tuning range

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5509025A (en) * 1994-04-04 1996-04-16 At&T Corp. Unipolar semiconductor laser
US5457709A (en) * 1994-04-04 1995-10-10 At&T Ipm Corp. Unipolar semiconductor laser
US5502787A (en) * 1995-05-22 1996-03-26 At&T Corp. Article comprising a semiconductor waveguide structure
US5727010A (en) * 1996-03-20 1998-03-10 Lucent Technologies Inc. Article comprising an improved quantum cascade laser
JP3159946B2 (ja) * 1996-11-06 2001-04-23 ルーセント テクノロジーズ インコーポレイテッド 量子カスケードレーザを有する物品
US5936989A (en) * 1997-04-29 1999-08-10 Lucent Technologies, Inc. Quantum cascade laser

Also Published As

Publication number Publication date
JP3522606B2 (ja) 2004-04-26
JP2000101201A (ja) 2000-04-07
DE69924439T2 (de) 2006-02-16
EP0989644A1 (de) 2000-03-29
US6055254A (en) 2000-04-25
EP0989644B1 (de) 2005-03-30

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Legal Events

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