DE69938788D1 - Hochleistungshalbleiterlichtquelle - Google Patents
HochleistungshalbleiterlichtquelleInfo
- Publication number
- DE69938788D1 DE69938788D1 DE69938788T DE69938788T DE69938788D1 DE 69938788 D1 DE69938788 D1 DE 69938788D1 DE 69938788 T DE69938788 T DE 69938788T DE 69938788 T DE69938788 T DE 69938788T DE 69938788 D1 DE69938788 D1 DE 69938788D1
- Authority
- DE
- Germany
- Prior art keywords
- light source
- semiconductor light
- high power
- power semiconductor
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0045—Devices characterised by their operation the devices being superluminescent diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
- H01S5/0651—Mode control
- H01S5/0653—Mode suppression, e.g. specific multimode
- H01S5/0655—Single transverse or lateral mode emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
- H01S5/1014—Tapered waveguide, e.g. spotsize converter
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
- H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
- H01S5/1085—Oblique facets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/146—External cavity lasers using a fiber as external cavity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
- H01S5/423—Arrays of surface emitting lasers having a vertical cavity
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US8945498P | 1998-06-16 | 1998-06-16 | |
PCT/US1999/013568 WO1999066613A1 (en) | 1998-06-16 | 1999-06-16 | High power semiconductor light source |
Publications (1)
Publication Number | Publication Date |
---|---|
DE69938788D1 true DE69938788D1 (de) | 2008-07-03 |
Family
ID=22217742
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69938788T Expired - Lifetime DE69938788D1 (de) | 1998-06-16 | 1999-06-16 | Hochleistungshalbleiterlichtquelle |
Country Status (4)
Country | Link |
---|---|
US (1) | US6339606B1 (de) |
EP (1) | EP1121720B1 (de) |
DE (1) | DE69938788D1 (de) |
WO (1) | WO1999066613A1 (de) |
Families Citing this family (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6430207B1 (en) * | 1998-09-23 | 2002-08-06 | Sarnoff Corporation | High-power laser with transverse mode filter |
US6829276B1 (en) * | 1999-10-22 | 2004-12-07 | Trumpf Photonics, Inc. | Integrated high power semiconductor laser |
EP1272878B1 (de) * | 2000-02-25 | 2004-10-27 | Trumpf Photonics, Inc. | Hochleistungs-superleuchtdiode mit einem gekrümmten mehrfachdurchgangs-wellenleiter |
GB2370884A (en) * | 2000-11-09 | 2002-07-10 | Kamelian Ltd | Optical waveguide |
US6804281B1 (en) * | 2001-01-23 | 2004-10-12 | James N. Walpole | Large modal volume semiconductor laser system with spatial mode filter |
US6607933B2 (en) * | 2001-08-07 | 2003-08-19 | Agere Systems Optoelectronics Guardian Corp. | Double layer beam expander for device-to-fiber coupling |
US6872985B2 (en) | 2001-11-15 | 2005-03-29 | Hrl Laboratories, Llc | Waveguide-bonded optoelectronic devices |
US7085499B2 (en) | 2001-11-15 | 2006-08-01 | Hrl Laboratories, Llc | Agile RF-lightwave waveform synthesis and an optical multi-tone amplitude modulator |
WO2003043178A2 (en) | 2001-11-15 | 2003-05-22 | Hrl Laboratories, Llc | Frequency agile spread waveform generator and method and pre-processor apparatus and method |
US10022078B2 (en) | 2004-07-13 | 2018-07-17 | Dexcom, Inc. | Analyte sensor |
JP3766637B2 (ja) * | 2002-03-04 | 2006-04-12 | 富士通株式会社 | 光結合素子及び光デバイス |
US6879610B2 (en) * | 2002-09-27 | 2005-04-12 | Sarnoff Corporation | Narrow spectral width light emitting devices |
US20040061122A1 (en) * | 2002-09-27 | 2004-04-01 | Gerard Alphonse | Light emitting device with low back facet reflections |
US20040202429A1 (en) * | 2003-04-10 | 2004-10-14 | Lambda Crossing Ltd. | Planar optical component for coupling light to a high index waveguide, and method of its manufacture |
US7050222B2 (en) * | 2003-05-23 | 2006-05-23 | Covega, Inc. | Methods and devices for high power, depolarized superluminescent diodes |
US7499653B2 (en) | 2003-07-14 | 2009-03-03 | Hrl Laboratories, Llc | Multiple wavelength photonic oscillator |
US7822082B2 (en) | 2004-01-27 | 2010-10-26 | Hrl Laboratories, Llc | Wavelength reconfigurable laser transmitter tuned via the resonance passbands of a tunable microresonator |
US7736382B2 (en) * | 2005-09-09 | 2010-06-15 | Lockheed Martin Corporation | Apparatus for optical stimulation of nerves and other animal tissue |
US20080077200A1 (en) * | 2006-09-21 | 2008-03-27 | Aculight Corporation | Apparatus and method for stimulation of nerves and automated control of surgical instruments |
US8945197B1 (en) | 2005-10-24 | 2015-02-03 | Lockheed Martin Corporation | Sight-restoring visual prosthetic and method using infrared nerve-stimulation light |
US8929973B1 (en) | 2005-10-24 | 2015-01-06 | Lockheed Martin Corporation | Apparatus and method for characterizing optical sources used with human and animal tissues |
US8709078B1 (en) | 2011-08-03 | 2014-04-29 | Lockheed Martin Corporation | Ocular implant with substantially constant retinal spacing for transmission of nerve-stimulation light |
US8792978B2 (en) | 2010-05-28 | 2014-07-29 | Lockheed Martin Corporation | Laser-based nerve stimulators for, E.G., hearing restoration in cochlear prostheses and method |
US8744570B2 (en) * | 2009-01-23 | 2014-06-03 | Lockheed Martin Corporation | Optical stimulation of the brainstem and/or midbrain, including auditory areas |
US8475506B1 (en) | 2007-08-13 | 2013-07-02 | Lockheed Martin Corporation | VCSEL array stimulator apparatus and method for light stimulation of bodily tissues |
US8012189B1 (en) | 2007-01-11 | 2011-09-06 | Lockheed Martin Corporation | Method and vestibular implant using optical stimulation of nerves |
US8956396B1 (en) | 2005-10-24 | 2015-02-17 | Lockheed Martin Corporation | Eye-tracking visual prosthetic and method |
US8160696B2 (en) | 2008-10-03 | 2012-04-17 | Lockheed Martin Corporation | Nerve stimulator and method using simultaneous electrical and optical signals |
US8996131B1 (en) | 2006-09-28 | 2015-03-31 | Lockheed Martin Corporation | Apparatus and method for managing chronic pain with infrared light sources and heat |
US8498699B2 (en) | 2008-10-03 | 2013-07-30 | Lockheed Martin Company | Method and nerve stimulator using simultaneous electrical and optical signals |
US7883536B1 (en) | 2007-01-19 | 2011-02-08 | Lockheed Martin Corporation | Hybrid optical-electrical probes |
WO2008117527A1 (ja) * | 2007-03-23 | 2008-10-02 | Kyushu University, National University Corporation | 高輝度発光ダイオード |
US8840654B2 (en) | 2011-07-22 | 2014-09-23 | Lockheed Martin Corporation | Cochlear implant using optical stimulation with encoded information designed to limit heating effects |
US20100016732A1 (en) * | 2008-07-17 | 2010-01-21 | Lockheed Martin Corporation | Apparatus and method for neural-signal capture to drive neuroprostheses or control bodily function |
JP5311046B2 (ja) | 2009-09-11 | 2013-10-09 | セイコーエプソン株式会社 | プロジェクター |
US9977188B2 (en) | 2011-08-30 | 2018-05-22 | Skorpios Technologies, Inc. | Integrated photonics mode expander |
US9158057B2 (en) * | 2012-05-18 | 2015-10-13 | Gerard A Alphonse | Semiconductor light source free from facet reflections |
WO2015183992A1 (en) * | 2014-05-27 | 2015-12-03 | Skorpios Technologies, Inc. | Waveguide mode expander using amorphous silicon |
EP3338331B1 (de) * | 2015-08-21 | 2023-10-18 | Universiteit Gent | On-chip-breitbandlichtquelle |
US10355449B2 (en) | 2016-08-15 | 2019-07-16 | University Of Central Florida Research Foundation, Inc. | Quantum cascade laser with angled active region and related methods |
US10649148B2 (en) | 2017-10-25 | 2020-05-12 | Skorpios Technologies, Inc. | Multistage spot size converter in silicon photonics |
US11360263B2 (en) | 2019-01-31 | 2022-06-14 | Skorpios Technologies. Inc. | Self-aligned spot size converter |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4349905A (en) * | 1980-07-22 | 1982-09-14 | Hewlett-Packard Company | Tapered stripe semiconductor laser |
US4713821A (en) | 1985-09-27 | 1987-12-15 | The Perkin-Elmer Corporation | Semiconductor laser and optical amplifier |
US4852113A (en) * | 1986-10-21 | 1989-07-25 | Trw Inc. | Laser array with wide-waveguide coupling region |
US4856014A (en) | 1986-12-31 | 1989-08-08 | Trw Inc. | Angled stripe superluminescent diode |
US4793679A (en) | 1987-04-20 | 1988-12-27 | General Electric Company | Optical coupling system |
US4821276A (en) | 1987-04-20 | 1989-04-11 | General Electric Company | Super-luminescent diode |
US4821277A (en) | 1987-04-20 | 1989-04-11 | General Electric Company | Super-luminescent diode |
US4789881A (en) | 1987-04-20 | 1988-12-06 | General Electric Company | Low coherence optical system having reflective means |
US4764934A (en) | 1987-07-27 | 1988-08-16 | Ortel Corporation | Superluminescent diode and single mode laser |
US4875216A (en) * | 1987-11-30 | 1989-10-17 | Xerox Corporation | Buried waveguide window regions for improved performance semiconductor lasers and other opto-electronic applications |
US4958355A (en) | 1989-03-29 | 1990-09-18 | Rca Inc. | High performance angled stripe superluminescent diode |
US5008889A (en) | 1989-11-06 | 1991-04-16 | Wilson Keith E | High-accuracy wavelength stabilization of angled-stripe super luminescent laser diode sources |
JP2839699B2 (ja) * | 1990-11-08 | 1998-12-16 | 株式会社東芝 | 進行波型光増幅器 |
JPH04296067A (ja) | 1991-03-26 | 1992-10-20 | Mitsubishi Precision Co Ltd | スーパー・ルミネッセント・ダイオード |
FR2684823B1 (fr) * | 1991-12-04 | 1994-01-21 | Alcatel Alsthom Cie Gle Electric | Composant optique semi-conducteur a mode de sortie elargi et son procede de fabrication. |
JPH05190972A (ja) * | 1992-01-13 | 1993-07-30 | Eastman Kodak Japan Kk | レーザダイオード |
JP2002515181A (ja) * | 1996-06-05 | 2002-05-21 | サーノフ コーポレイション | 発光半導体装置 |
JPH1075011A (ja) * | 1996-08-30 | 1998-03-17 | Sony Corp | 半導体レーザ |
JP3508423B2 (ja) * | 1996-10-01 | 2004-03-22 | ソニー株式会社 | 半導体レーザ |
US5818857A (en) | 1997-03-05 | 1998-10-06 | Syncomm Inc. | Stabilized DFB laser |
US6018536A (en) * | 1998-11-20 | 2000-01-25 | Sarnoff Corporation | Multiple-wavelength mode-locked laser |
-
1998
- 1998-09-23 US US09/158,847 patent/US6339606B1/en not_active Expired - Lifetime
-
1999
- 1999-06-16 DE DE69938788T patent/DE69938788D1/de not_active Expired - Lifetime
- 1999-06-16 EP EP99928706A patent/EP1121720B1/de not_active Expired - Lifetime
- 1999-06-16 WO PCT/US1999/013568 patent/WO1999066613A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
EP1121720A1 (de) | 2001-08-08 |
WO1999066613A9 (en) | 2000-06-29 |
WO1999066613A1 (en) | 1999-12-23 |
EP1121720B1 (de) | 2008-05-21 |
US6339606B1 (en) | 2002-01-15 |
EP1121720A4 (de) | 2005-09-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |