WO2008117527A1 - 高輝度発光ダイオード - Google Patents

高輝度発光ダイオード Download PDF

Info

Publication number
WO2008117527A1
WO2008117527A1 PCT/JP2008/000674 JP2008000674W WO2008117527A1 WO 2008117527 A1 WO2008117527 A1 WO 2008117527A1 JP 2008000674 W JP2008000674 W JP 2008000674W WO 2008117527 A1 WO2008117527 A1 WO 2008117527A1
Authority
WO
WIPO (PCT)
Prior art keywords
optical waveguide
emitting diode
intensity light
multimode interference
optically connected
Prior art date
Application number
PCT/JP2008/000674
Other languages
English (en)
French (fr)
Inventor
Kiichi Hamamoto
Original Assignee
Kyushu University, National University Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyushu University, National University Corporation filed Critical Kyushu University, National University Corporation
Priority to DE112008000772T priority Critical patent/DE112008000772T5/de
Priority to US12/450,347 priority patent/US8295663B2/en
Priority to JP2009506208A priority patent/JP5616629B2/ja
Publication of WO2008117527A1 publication Critical patent/WO2008117527A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0045—Devices characterised by their operation the devices being superluminescent diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

　特に高い光出力を供するための光導波路構造を有する高輝度発光ダイオードを提供する。この高輝度発光ダイオードは、マルチモード干渉光導波路の一端と光学的に接続された一端と第１の光出射端面を構成する他端とを有する第１の光導波路と、マルチモード干渉光導波路の他端と光学的に接続された一端と第２の光出射端面を構成する他端とを有する第２の光導波路とを含む。第１の光導波路および第２の光導波路は、いずれも、マルチモード干渉光導波路よりも狭い幅を有する。
PCT/JP2008/000674 2007-03-23 2008-03-21 高輝度発光ダイオード WO2008117527A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
DE112008000772T DE112008000772T5 (de) 2007-03-23 2008-03-21 Superlumineszente lichtemittierende Diode
US12/450,347 US8295663B2 (en) 2007-03-23 2008-03-21 Super-luminescent light emitting diode
JP2009506208A JP5616629B2 (ja) 2007-03-23 2008-03-21 高輝度発光ダイオード

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-076585 2007-03-23
JP2007076585 2007-03-23

Publications (1)

Publication Number Publication Date
WO2008117527A1 true WO2008117527A1 (ja) 2008-10-02

Family

ID=39788269

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/000674 WO2008117527A1 (ja) 2007-03-23 2008-03-21 高輝度発光ダイオード

Country Status (4)

Country Link
US (1) US8295663B2 (ja)
JP (1) JP5616629B2 (ja)
DE (1) DE112008000772T5 (ja)
WO (1) WO2008117527A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014165414A (ja) * 2013-02-27 2014-09-08 Seiko Epson Corp 半導体発光装置、スーパールミネッセントダイオード、およびプロジェクター

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US9158032B2 (en) * 2010-02-18 2015-10-13 US Seismic Systems, Inc. Optical detection systems and methods of using the same
US9885828B2 (en) * 2015-06-04 2018-02-06 Finisar Sweden Ab Optical waveguiding part

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06237011A (ja) * 1993-02-12 1994-08-23 Olympus Optical Co Ltd 光半導体素子
JPH1073736A (ja) * 1996-08-30 1998-03-17 Hitachi Ltd 半導体光素子、ファイバ型光アンプおよび光伝送装置
JP2002518857A (ja) * 1998-09-23 2002-06-25 サーノフ コーポレーション 高電力半導体光源
JP2000244009A (ja) * 1999-02-24 2000-09-08 Stanley Electric Co Ltd ス−パ−ルミネッセントダイオ−ド
WO2005060058A1 (ja) * 2003-12-18 2005-06-30 Nec Corporation 半導体レーザーおよびその製造方法
JP2006186250A (ja) * 2004-12-28 2006-07-13 Anritsu Corp 半導体発光素子および外部共振器型レーザ光源
JP2007273690A (ja) * 2006-03-31 2007-10-18 Fujifilm Corp 光半導体素子、及びこれを備えた波長可変光源

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014165414A (ja) * 2013-02-27 2014-09-08 Seiko Epson Corp 半導体発光装置、スーパールミネッセントダイオード、およびプロジェクター

Also Published As

Publication number Publication date
JPWO2008117527A1 (ja) 2010-07-15
US8295663B2 (en) 2012-10-23
JP5616629B2 (ja) 2014-10-29
US20100040323A1 (en) 2010-02-18
DE112008000772T5 (de) 2010-04-08

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