DE69919235D1 - Variabler Halbleiterkondensator und Herstellungsverfahren - Google Patents

Variabler Halbleiterkondensator und Herstellungsverfahren

Info

Publication number
DE69919235D1
DE69919235D1 DE69919235T DE69919235T DE69919235D1 DE 69919235 D1 DE69919235 D1 DE 69919235D1 DE 69919235 T DE69919235 T DE 69919235T DE 69919235 T DE69919235 T DE 69919235T DE 69919235 D1 DE69919235 D1 DE 69919235D1
Authority
DE
Germany
Prior art keywords
manufacturing process
semiconductor capacitor
variable semiconductor
variable
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69919235T
Other languages
English (en)
Other versions
DE69919235T2 (de
Inventor
Alexander Kalnitsky
Alan Kramer
Vito Fabbrizio
Giovanni Gozzini
Bhusan Gupta
Marco Sabarini
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics lnc USA
Original Assignee
STMicroelectronics lnc USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics lnc USA filed Critical STMicroelectronics lnc USA
Application granted granted Critical
Publication of DE69919235D1 publication Critical patent/DE69919235D1/de
Publication of DE69919235T2 publication Critical patent/DE69919235T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
    • H01G5/16—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
  • Micromachines (AREA)
  • Pressure Sensors (AREA)
DE69919235T 1998-01-13 1999-01-12 Variabler Halbleiterkondensator und Herstellungsverfahren Expired - Fee Related DE69919235T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US6269 1998-01-13
US09/006,269 US5982608A (en) 1998-01-13 1998-01-13 Semiconductor variable capacitor

Publications (2)

Publication Number Publication Date
DE69919235D1 true DE69919235D1 (de) 2004-09-16
DE69919235T2 DE69919235T2 (de) 2005-09-08

Family

ID=21720094

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69919235T Expired - Fee Related DE69919235T2 (de) 1998-01-13 1999-01-12 Variabler Halbleiterkondensator und Herstellungsverfahren

Country Status (4)

Country Link
US (2) US5982608A (de)
EP (1) EP0928959B1 (de)
JP (1) JP4602494B2 (de)
DE (1) DE69919235T2 (de)

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US6465830B2 (en) 2000-06-13 2002-10-15 Texas Instruments Incorporated RF voltage controlled capacitor on thick-film SOI
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US6437965B1 (en) * 2000-11-28 2002-08-20 Harris Corporation Electronic device including multiple capacitance value MEMS capacitor and associated methods
US6306721B1 (en) * 2001-03-16 2001-10-23 Chartered Semiconductor Maufacturing Ltd. Method of forming salicided poly to metal capacitor
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FR2830978B1 (fr) * 2001-10-17 2006-07-21 Commissariat Energie Atomique Dispositif a capacite electrique variable integree et procede de realisation d'un tel dispositif
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US6661069B1 (en) * 2002-10-22 2003-12-09 International Business Machines Corporation Micro-electromechanical varactor with enhanced tuning range
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US7114378B1 (en) * 2005-04-14 2006-10-03 Agilent Technologies, Inc. Planar resonant tunneling sensor and method of fabricating and using the same
JP2007273932A (ja) 2006-03-06 2007-10-18 Fujitsu Ltd 可変キャパシタおよび可変キャパシタ製造方法
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US8169772B2 (en) 2007-05-01 2012-05-01 Avx Corporation Precision laser adjustable thin film capacitors
EP2083431A1 (de) * 2008-01-25 2009-07-29 University College Cork-National University of Ireland, Cork Mikroelektromechanisch einstellbarer Kondensator
US8053865B2 (en) * 2008-03-10 2011-11-08 Taiwan Semiconductor Manufacturing Company, Ltd. MOM capacitors integrated with air-gaps
JP5558198B2 (ja) 2010-05-13 2014-07-23 三菱電機株式会社 半導体圧力センサ
DE102010035247A1 (de) * 2010-08-24 2012-03-01 Siemens Aktiengesellschaft Dielektrischer kapazitiver MEMS Energiewandler
US8498094B2 (en) * 2011-05-05 2013-07-30 Eta Semiconductor Inc. Semiconductor variable capacitor
US9401436B2 (en) * 2011-05-05 2016-07-26 Qualcomm Incorporated Multiple control transcap variable capacitor
ITTO20110881A1 (it) * 2011-10-03 2013-04-04 Milano Politecnico Sensore microelettromeccanico con massa di rilevamento non conduttiva e metodo di rilevamento mediante un sensore microelettromeccanico
US9080871B2 (en) 2011-09-30 2015-07-14 Stmicroelectronics S.R.L. Microelectromechanical sensor with non-conductive sensing mass, and method of sensing through a microelectromechanical sensor
US10112556B2 (en) 2011-11-03 2018-10-30 Ford Global Technologies, Llc Proximity switch having wrong touch adaptive learning and method
US8952529B2 (en) 2011-11-22 2015-02-10 Stats Chippac, Ltd. Semiconductor device with conductive layer over substrate with vents to channel bump material and reduce interconnect voids
US9520875B2 (en) 2012-04-11 2016-12-13 Ford Global Technologies, Llc Pliable proximity switch assembly and activation method
US9944237B2 (en) 2012-04-11 2018-04-17 Ford Global Technologies, Llc Proximity switch assembly with signal drift rejection and method
US9531379B2 (en) * 2012-04-11 2016-12-27 Ford Global Technologies, Llc Proximity switch assembly having groove between adjacent proximity sensors
US9660644B2 (en) 2012-04-11 2017-05-23 Ford Global Technologies, Llc Proximity switch assembly and activation method
US9568527B2 (en) 2012-04-11 2017-02-14 Ford Global Technologies, Llc Proximity switch assembly and activation method having virtual button mode
US9831870B2 (en) 2012-04-11 2017-11-28 Ford Global Technologies, Llc Proximity switch assembly and method of tuning same
US9559688B2 (en) * 2012-04-11 2017-01-31 Ford Global Technologies, Llc Proximity switch assembly having pliable surface and depression
US8963289B2 (en) * 2012-05-08 2015-02-24 Eta Semiconductor Inc. Digital semiconductor variable capacitor
EP2674392B1 (de) 2012-06-12 2017-12-27 ams international AG Integrierte Schaltung mit Drucksensor und Herstellungsverfahren
US10038443B2 (en) 2014-10-20 2018-07-31 Ford Global Technologies, Llc Directional proximity switch assembly
JP2016170018A (ja) * 2015-03-12 2016-09-23 株式会社東芝 Ｍｅｍｓ装置
US9654103B2 (en) 2015-03-18 2017-05-16 Ford Global Technologies, Llc Proximity switch assembly having haptic feedback and method
US9548733B2 (en) 2015-05-20 2017-01-17 Ford Global Technologies, Llc Proximity sensor assembly having interleaved electrode configuration

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Also Published As

Publication number Publication date
EP0928959B1 (de) 2004-08-11
US5982608A (en) 1999-11-09
JP4602494B2 (ja) 2010-12-22
DE69919235T2 (de) 2005-09-08
JPH11261015A (ja) 1999-09-24
EP0928959A3 (de) 1999-12-08
EP0928959A2 (de) 1999-07-14
US6110791A (en) 2000-08-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee