DE69916802D1 - Gerät für extrem-ultraviolett-lithographie mit einem filter zur unterdrückung unerwünschter atomarer und mikroskopischer partikel einer strahlungsquelle sowie in einem derartigen apparat verwendetes filter - Google Patents
Gerät für extrem-ultraviolett-lithographie mit einem filter zur unterdrückung unerwünschter atomarer und mikroskopischer partikel einer strahlungsquelle sowie in einem derartigen apparat verwendetes filterInfo
- Publication number
- DE69916802D1 DE69916802D1 DE69916802T DE69916802T DE69916802D1 DE 69916802 D1 DE69916802 D1 DE 69916802D1 DE 69916802 T DE69916802 T DE 69916802T DE 69916802 T DE69916802 T DE 69916802T DE 69916802 D1 DE69916802 D1 DE 69916802D1
- Authority
- DE
- Germany
- Prior art keywords
- filter
- radiation source
- ultraviolet lithography
- microscopic particles
- suppressing unwanted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000002245 particle Substances 0.000 title 1
- 230000005855 radiation Effects 0.000 title 1
- 238000000233 ultraviolet lithography Methods 0.000 title 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
- G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
- G03F7/203—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure comprising an imagewise exposure to electromagnetic radiation or corpuscular radiation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
- G03F7/70166—Capillary or channel elements, e.g. nested extreme ultraviolet [EUV] mirrors or shells, optical fibers or light guides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70208—Multiple illumination paths, e.g. radiation distribution devices, microlens illumination systems, multiplexers or demultiplexers for single or multiple projection systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Nanotechnology (AREA)
- Environmental & Geological Engineering (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Plasma & Fusion (AREA)
- Electromagnetism (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL1008352A NL1008352C2 (nl) | 1998-02-19 | 1998-02-19 | Inrichting, geschikt voor extreem ultraviolet lithografie, omvattende een stralingsbron en een verwerkingsorgaan voor het verwerken van de van de stralingsbron afkomstige straling, alsmede een filter voor het onderdrukken van ongewenste atomaire en microscopische deeltjes welke door een stralingsbron zijn uitgezonden. |
PCT/NL1999/000090 WO1999042904A1 (en) | 1998-02-19 | 1999-02-19 | Filter for extreme ultraviolet lithography |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69916802D1 true DE69916802D1 (de) | 2004-06-03 |
DE69916802T2 DE69916802T2 (de) | 2005-04-21 |
Family
ID=19766571
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69916802T Expired - Lifetime DE69916802T2 (de) | 1998-02-19 | 1999-02-19 | Gerät für extrem-ultraviolett-lithographie mit einem filter zur unterdrückung unerwünschter atomarer und mikroskopischer partikel einer strahlungsquelle sowie in einem derartigen apparat verwendetes filter |
DE69942696T Expired - Lifetime DE69942696D1 (de) | 1998-02-19 | 1999-02-19 | Verwendung eines Partikelfilters mit einer EUV-Strahlungsquelle |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69942696T Expired - Lifetime DE69942696D1 (de) | 1998-02-19 | 1999-02-19 | Verwendung eines Partikelfilters mit einer EUV-Strahlungsquelle |
Country Status (8)
Country | Link |
---|---|
US (3) | US6359969B1 (de) |
EP (2) | EP1057079B9 (de) |
JP (1) | JP4323095B2 (de) |
KR (1) | KR100706075B1 (de) |
AU (1) | AU3278899A (de) |
DE (2) | DE69916802T2 (de) |
NL (1) | NL1008352C2 (de) |
WO (1) | WO1999042904A1 (de) |
Families Citing this family (122)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL1008352C2 (nl) | 1998-02-19 | 1999-08-20 | Stichting Tech Wetenschapp | Inrichting, geschikt voor extreem ultraviolet lithografie, omvattende een stralingsbron en een verwerkingsorgaan voor het verwerken van de van de stralingsbron afkomstige straling, alsmede een filter voor het onderdrukken van ongewenste atomaire en microscopische deeltjes welke door een stralingsbron zijn uitgezonden. |
EP1058156A3 (de) * | 1999-06-04 | 2003-06-25 | ASML Netherlands B.V. | Integrierender Wellenleiter zur Verwendung in einem lithographischen Projektionsapparat |
IT1316249B1 (it) * | 2000-12-01 | 2003-04-03 | Enea Ente Nuove Tec | Procedimento di abbattimento del flusso di ioni e di piccoli detritiin sorgenti di raggi-x molli da plasma, tramite l'uso di kripton. |
US6576912B2 (en) | 2001-01-03 | 2003-06-10 | Hugo M. Visser | Lithographic projection apparatus equipped with extreme ultraviolet window serving simultaneously as vacuum window |
JP2004519868A (ja) * | 2001-04-17 | 2004-07-02 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Euvに透明な境界構造 |
JP3790814B2 (ja) * | 2001-10-25 | 2006-06-28 | 独立行政法人産業技術総合研究所 | X線照射装置における飛散物除去方法及び装置 |
US7671349B2 (en) * | 2003-04-08 | 2010-03-02 | Cymer, Inc. | Laser produced plasma EUV light source |
US7333178B2 (en) * | 2002-03-18 | 2008-02-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7170587B2 (en) * | 2002-03-18 | 2007-01-30 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1349008A1 (de) * | 2002-03-28 | 2003-10-01 | ASML Netherlands B.V. | Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung |
SG109523A1 (en) * | 2002-08-15 | 2005-03-30 | Asml Netherlands Bv | Lithographic projection apparatus and reflector assembly for use in said apparatus |
DE10237901B3 (de) * | 2002-08-16 | 2004-05-27 | Xtreme Technologies Gmbh | Anordnung zur Unterdrückung von Teilchenemission bei der Strahlungserzeugung einer Röntgenstrahlungsquelle |
TWI229242B (en) * | 2002-08-23 | 2005-03-11 | Asml Netherlands Bv | Lithographic projection apparatus and particle barrier for use in said apparatus |
SG115575A1 (en) | 2002-10-18 | 2005-10-28 | Asml Netherlands Bv | Lithographic projection apparatus comprising a secondary electron removal unit |
US6963071B2 (en) * | 2002-11-25 | 2005-11-08 | Intel Corporation | Debris mitigation device |
TWI230847B (en) | 2002-12-23 | 2005-04-11 | Asml Netherlands Bv | Contamination barrier with expandable lamellas |
EP1434098B1 (de) * | 2002-12-23 | 2006-03-08 | ASML Netherlands B.V. | Kontaminationsschutz mit ausdehnbaren Lamellen |
DE10308174B4 (de) * | 2003-02-24 | 2010-01-14 | Xtreme Technologies Gmbh | Anordnung zur Debrisreduktion bei einer Strahlungsquelle auf Basis eines Plasmas |
TWI275325B (en) * | 2003-03-08 | 2007-03-01 | Cymer Inc | Discharge produced plasma EUV light source |
JP2004343082A (ja) * | 2003-04-17 | 2004-12-02 | Asml Netherlands Bv | 凹面および凸面を含む集光器を備えたリトグラフ投影装置 |
EP1491963A3 (de) * | 2003-06-27 | 2005-08-17 | ASML Netherlands B.V. | Lasererzeugtes Plasma-Strahlungssystem mit Kontaminationsschutz |
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US7384149B2 (en) | 2003-07-21 | 2008-06-10 | Asml Netherlands B.V. | Lithographic projection apparatus, gas purging method and device manufacturing method and purge gas supply system |
US7230258B2 (en) * | 2003-07-24 | 2007-06-12 | Intel Corporation | Plasma-based debris mitigation for extreme ultraviolet (EUV) light source |
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EP1531365A1 (de) * | 2003-11-11 | 2005-05-18 | ASML Netherlands B.V. | Lithographischer Apparat mit Unterdrückung von Kontamination |
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-
1998
- 1998-02-19 NL NL1008352A patent/NL1008352C2/nl not_active IP Right Cessation
-
1999
- 1999-02-19 AU AU32788/99A patent/AU3278899A/en not_active Abandoned
- 1999-02-19 EP EP99934347A patent/EP1057079B9/de not_active Expired - Lifetime
- 1999-02-19 DE DE69916802T patent/DE69916802T2/de not_active Expired - Lifetime
- 1999-02-19 EP EP03076346A patent/EP1355195B1/de not_active Expired - Lifetime
- 1999-02-19 WO PCT/NL1999/000090 patent/WO1999042904A1/en not_active Application Discontinuation
- 1999-02-19 DE DE69942696T patent/DE69942696D1/de not_active Expired - Lifetime
- 1999-02-19 JP JP2000532779A patent/JP4323095B2/ja not_active Expired - Lifetime
- 1999-02-19 KR KR1020007008671A patent/KR100706075B1/ko not_active IP Right Cessation
-
2000
- 2000-08-18 US US09/641,455 patent/US6359969B1/en not_active Expired - Lifetime
-
2004
- 2004-03-18 US US10/803,201 patent/USRE43036E1/en not_active Expired - Lifetime
-
2011
- 2011-10-19 US US13/276,888 patent/USRE44120E1/en not_active Expired - Lifetime
Also Published As
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---|---|
EP1057079B1 (de) | 2004-04-28 |
DE69916802T2 (de) | 2005-04-21 |
NL1008352C2 (nl) | 1999-08-20 |
EP1355195B1 (de) | 2010-08-18 |
DE69942696D1 (de) | 2010-09-30 |
USRE43036E1 (en) | 2011-12-20 |
JP4323095B2 (ja) | 2009-09-02 |
EP1057079B9 (de) | 2006-05-03 |
US6359969B1 (en) | 2002-03-19 |
WO1999042904A1 (en) | 1999-08-26 |
JP2002504746A (ja) | 2002-02-12 |
KR20010040779A (ko) | 2001-05-15 |
KR100706075B1 (ko) | 2007-04-11 |
AU3278899A (en) | 1999-09-06 |
USRE44120E1 (en) | 2013-04-02 |
EP1355195A1 (de) | 2003-10-22 |
EP1057079A1 (de) | 2000-12-06 |
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