DE69916683D1 - Substrat-Glas für Anzeigevorrichtungen - Google Patents

Substrat-Glas für Anzeigevorrichtungen

Info

Publication number
DE69916683D1
DE69916683D1 DE69916683T DE69916683T DE69916683D1 DE 69916683 D1 DE69916683 D1 DE 69916683D1 DE 69916683 T DE69916683 T DE 69916683T DE 69916683 T DE69916683 T DE 69916683T DE 69916683 D1 DE69916683 D1 DE 69916683D1
Authority
DE
Germany
Prior art keywords
display devices
substrate glass
glass
substrate
display
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69916683T
Other languages
English (en)
Other versions
DE69916683T2 (de
Inventor
Tetsuya Nakashima
Kei Maeda
Yasumasa Nakao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AGC Inc
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Application granted granted Critical
Publication of DE69916683D1 publication Critical patent/DE69916683D1/de
Publication of DE69916683T2 publication Critical patent/DE69916683T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
    • C03C3/085—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
    • C03C3/085—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
    • C03C3/087—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal containing calcium oxide, e.g. common sheet or container glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J17/00—Gas-filled discharge tubes with solid cathode
    • H01J17/02—Details
    • H01J17/16—Vessels; Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2217/00—Gas-filled discharge tubes
    • H01J2217/38—Cold-cathode tubes
    • H01J2217/49—Display panels, e.g. not making use of alternating current
    • H01J2217/492—Details
    • H01J2217/49264—Vessels
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Glass Compositions (AREA)
DE69916683T 1998-02-27 1999-02-26 Glassubstrat für Bildschirme Expired - Lifetime DE69916683T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP4809698 1998-02-27
JP4809698 1998-02-27

Publications (2)

Publication Number Publication Date
DE69916683D1 true DE69916683D1 (de) 2004-06-03
DE69916683T2 DE69916683T2 (de) 2005-04-28

Family

ID=12793794

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69916683T Expired - Lifetime DE69916683T2 (de) 1998-02-27 1999-02-26 Glassubstrat für Bildschirme

Country Status (3)

Country Link
US (1) US6313052B1 (de)
EP (1) EP0939060B1 (de)
DE (1) DE69916683T2 (de)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6797658B2 (en) * 2001-02-09 2004-09-28 Ppg Industries Ohio, Inc. Methods of adjusting temperatures of glass characteristics and glass articles produced thereby
US6878652B2 (en) * 2001-02-09 2005-04-12 Ppg Industries Ohio, Inc. Methods of adjusting glass melting and forming temperatures without substantially changing bending and annealing temperatures and glass articles produced thereby
US6596660B1 (en) 2001-10-26 2003-07-22 Visteon Global Technologies, Inc. Amber-free reduced blue glass composition
EP1460044B2 (de) * 2001-12-28 2016-10-26 Nippon Sheet Glass Company, Limited Glasplatte und glasplatte zur verwendung in photoelektrischen wandlern
US7309671B2 (en) * 2002-05-24 2007-12-18 Nippon Sheet Glass Co., Ltd. Glass composition, glass article, glass substrate for magnetic recording media, and method for producing the same
JP4530618B2 (ja) * 2002-09-27 2010-08-25 コニカミノルタオプト株式会社 ガラス組成物及びガラス基板
US7094716B2 (en) * 2002-10-04 2006-08-22 Automotive Components Holdings, Llc Green glass composition
US6995102B2 (en) * 2003-07-16 2006-02-07 Visteon Global Technologies, Inc. Infrared absorbing blue glass composition
JP5008841B2 (ja) * 2005-08-02 2012-08-22 株式会社フジクラ 電極基板の製造方法、光電変換素子および色素増感太陽電池
US20100181908A1 (en) * 2006-02-28 2010-07-22 Matsushita Electric Industrial Co., Ltd. Flat display
JP5359271B2 (ja) * 2006-07-13 2013-12-04 旭硝子株式会社 無アルカリガラス基板及びその製造方法並びに液晶ディスプレイパネル
JP5263152B2 (ja) 2007-03-23 2013-08-14 旭硝子株式会社 データ記憶媒体用基板ガラスおよびガラス基板
CN101784494B (zh) * 2007-08-31 2013-01-30 旭硝子株式会社 玻璃板及其制造方法以及tft面板的制造方法
JP5206261B2 (ja) * 2007-10-26 2013-06-12 旭硝子株式会社 情報記録媒体基板用ガラス、磁気ディスク用ガラス基板および磁気ディスク
CN101622205B (zh) * 2008-01-28 2012-09-26 旭硝子株式会社 数据存储介质基板用玻璃、数据存储介质用玻璃基板及磁盘
DE202009018722U1 (de) * 2008-02-26 2012-11-21 Corning Inc. Läutermittel für Silikatgläser
WO2009131053A1 (ja) * 2008-04-21 2009-10-29 旭硝子株式会社 ディスプレイパネル用ガラス板、その製造方法およびｔｆｔパネルの製造方法
US9782949B2 (en) * 2008-05-30 2017-10-10 Corning Incorporated Glass laminated articles and layered articles
WO2009154064A1 (ja) * 2008-06-18 2009-12-23 日本板硝子株式会社 鱗片状ガラス及び被覆鱗片状ガラス
US8445394B2 (en) 2008-10-06 2013-05-21 Corning Incorporated Intermediate thermal expansion coefficient glass
DE102009050988B3 (de) * 2009-05-12 2010-11-04 Schott Ag Dünnschichtsolarzelle
DE102009022575A1 (de) * 2009-05-18 2010-11-25 Technische Universität Bergakademie Freiberg Verwendung von Alumosilikatgläsern als Substratgläser für die Photovoltaik
US9371247B2 (en) * 2009-05-29 2016-06-21 Corsam Technologies Llc Fusion formable sodium free glass
DE102009025972B4 (de) * 2009-06-15 2018-12-27 Sage Electrochromics, Inc. Verbundglasscheibe und deren Verwendung
DE102009051852B4 (de) * 2009-10-28 2013-03-21 Schott Ag Borfreies Glas und dessen Verwendung
CN103153892B (zh) * 2010-05-20 2016-05-18 法国圣戈班玻璃厂 用于高温应用的玻璃基材
DE102010054967B4 (de) 2010-12-08 2014-08-28 Schott Ag Borfreies Universalglas und dessen Verwendung
WO2012108345A1 (ja) * 2011-02-08 2012-08-16 旭硝子株式会社 ガラス組成物およびガラス組成物を用いた太陽電池用ガラス基板、並びにディスプレイパネル用ガラス基板
JP2013016358A (ja) * 2011-07-04 2013-01-24 Sony Corp 光電変換素子モジュール
WO2014179140A2 (en) 2013-04-29 2014-11-06 Corning Incorporated Photovoltaic module package
DE102013109087B3 (de) * 2013-08-22 2015-02-19 Schott Ag Flachglas mit Filterwirkung, Verfahren zu seiner Herstellung, Verwendung sowie Schichtverbund
GB201505091D0 (en) 2015-03-26 2015-05-06 Pilkington Group Ltd Glass
US11951713B2 (en) 2020-12-10 2024-04-09 Corning Incorporated Glass with unique fracture behavior for vehicle windshield

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2926800B2 (ja) 1989-11-28 1999-07-28 旭硝子株式会社 ガラス組成物
JP3144823B2 (ja) 1991-04-26 2001-03-12 旭硝子株式会社 無アルカリガラス
JP3170343B2 (ja) 1992-05-07 2001-05-28 日産自動車株式会社 車両用表示装置
JPH0624790A (ja) * 1992-07-06 1994-02-01 Nippon Sheet Glass Co Ltd 液晶表示素子用ガラス基板
JP3460298B2 (ja) 1994-03-22 2003-10-27 日本板硝子株式会社 基板用ガラス組成物
US5631195A (en) 1994-09-14 1997-05-20 Asahi Glass Company Ltd. Glass composition and substrate for plasma display
US5599754A (en) 1994-10-14 1997-02-04 Asahi Glass Company Ltd. Glass composition for a substrate, and substrate for plasma display made thereof
JPH08133771A (ja) * 1994-11-11 1996-05-28 Nippon Sheet Glass Co Ltd 液晶表示素子用ガラス基板及びその製造方法
JPH08290939A (ja) * 1995-04-14 1996-11-05 Nippon Electric Glass Co Ltd 基板用ガラス
GB2299991B (en) * 1995-04-20 1998-09-09 Ag Technology Corp Glass substrate for magnetic disk
JP3804115B2 (ja) * 1996-01-24 2006-08-02 旭硝子株式会社 ガラス基板
JP3800656B2 (ja) 1996-03-14 2006-07-26 旭硝子株式会社 基板用のガラス組成物
EP0795522B1 (de) 1996-03-14 1999-08-18 Asahi Glass Company Ltd. Glaszusammensetzung für ein Substrat
US5908794A (en) * 1996-03-15 1999-06-01 Asahi Glass Company Ltd. Glass composition for a substrate
JP3804159B2 (ja) 1996-03-15 2006-08-02 旭硝子株式会社 ガラス基板およびｐｄｐ用ガラス基板
JP4029438B2 (ja) * 1996-06-20 2008-01-09 旭硝子株式会社 プラズマディスプレイパネル用ガラス基板
US5888917A (en) * 1996-06-20 1999-03-30 Asahi Glass Company Ltd. Glass substrate for plasma display panel
EP0853070A4 (de) * 1996-07-10 2000-05-31 Nippon Electric Glass Co Substatglas und hiermit hergestellte plasma-anzeigevorrichtung
JP3867817B2 (ja) * 1996-07-12 2007-01-17 日本電気硝子株式会社 基板用ガラス
JPH10152339A (ja) * 1996-09-27 1998-06-09 Nippon Sheet Glass Co Ltd 耐熱性ガラス組成物
US5854153A (en) * 1997-01-09 1998-12-29 Corning Incorporated Glasses for display panels
DE69806714T2 (de) * 1997-03-13 2003-04-03 Saint-Gobain Glass France, Courbevoie Kalknatron-silikatglaszusammensetzungen und deren anwendungen
DE19721738C1 (de) * 1997-05-24 1998-11-05 Schott Glas Aluminosilicatglas für flache Anzeigevorrichtungen und Verwendungen

Also Published As

Publication number Publication date
EP0939060A1 (de) 1999-09-01
DE69916683T2 (de) 2005-04-28
US6313052B1 (en) 2001-11-06
EP0939060B1 (de) 2004-04-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition