DE69915592D1 - BESCHICHTUNGSVERFAHREN ZUR BENUTZUNG EINES Cu(hfac)-VORLÄUFERS MIT EINEM PHENYLETHYLEN-LIGAND - Google Patents

BESCHICHTUNGSVERFAHREN ZUR BENUTZUNG EINES Cu(hfac)-VORLÄUFERS MIT EINEM PHENYLETHYLEN-LIGAND

Info

Publication number
DE69915592D1
DE69915592D1 DE69915592T DE69915592T DE69915592D1 DE 69915592 D1 DE69915592 D1 DE 69915592D1 DE 69915592 T DE69915592 T DE 69915592T DE 69915592 T DE69915592 T DE 69915592T DE 69915592 D1 DE69915592 D1 DE 69915592D1
Authority
DE
Germany
Prior art keywords
hfac
phase
coating method
phenylethylene ligand
phenylethylene
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69915592T
Other languages
English (en)
Other versions
DE69915592T2 (de
Inventor
Wei-Wei Zhuang
Lawrence J Charneski
Sheng Teng Hsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of DE69915592D1 publication Critical patent/DE69915592D1/de
Application granted granted Critical
Publication of DE69915592T2 publication Critical patent/DE69915592T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
    • H01L21/76876—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for deposition from the gas phase, e.g. CVD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic Table
    • C07F1/08—Copper compounds

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
DE69915592T 1998-11-10 1999-11-10 BESCHICHTUNGSVERFAHREN ZUR BENUTZUNG EINES Cu(hfac)-VORLÄUFERS MIT EINEM PHENYLETHYLEN-LIGAND Expired - Lifetime DE69915592T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US10789298P 1998-11-10 1998-11-10
US107892P 1998-11-10
US09/351,645 US6204176B1 (en) 1998-11-10 1999-07-12 Substituted phenylethylene precursor deposition method
US351645 1999-07-12
PCT/JP1999/006246 WO2000028107A1 (en) 1998-11-10 1999-11-10 Substituted phenylethylene precursor deposition method

Publications (2)

Publication Number Publication Date
DE69915592D1 true DE69915592D1 (de) 2004-04-22
DE69915592T2 DE69915592T2 (de) 2005-02-03

Family

ID=26805299

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69915592T Expired - Lifetime DE69915592T2 (de) 1998-11-10 1999-11-10 BESCHICHTUNGSVERFAHREN ZUR BENUTZUNG EINES Cu(hfac)-VORLÄUFERS MIT EINEM PHENYLETHYLEN-LIGAND

Country Status (7)

Country Link
US (1) US6204176B1 (de)
EP (1) EP1047807B1 (de)
JP (1) JP3729739B2 (de)
KR (1) KR100347834B1 (de)
DE (1) DE69915592T2 (de)
TW (1) TW518371B (de)
WO (1) WO2000028107A1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5939334A (en) * 1997-05-22 1999-08-17 Sharp Laboratories Of America, Inc. System and method of selectively cleaning copper substrate surfaces, in-situ, to remove copper oxides
US6596344B2 (en) * 2001-03-27 2003-07-22 Sharp Laboratories Of America, Inc. Method of depositing a high-adhesive copper thin film on a metal nitride substrate
JP2010209410A (ja) * 2009-03-10 2010-09-24 Tokyo Electron Ltd Ｃｕ膜の成膜方法および記憶媒体

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4385005A (en) 1981-07-13 1983-05-24 Exxon Research And Engineering Co. Process for separating unsaturated hydrocarbons using copper or silver complexes with fluorinated diketonates
US4425281A (en) 1981-07-13 1984-01-10 Exxon Research And Engineering Co. Copper or silver complexes with fluorinated diketones and unsaturated ligands
US4434317A (en) 1983-05-06 1984-02-28 Exxon Research And Engineering Company Separation and recovery of unsaturated hydrocarbons by copper (I) complexes
US5028724A (en) 1990-03-30 1991-07-02 Air Products And Chemicals, Inc. Synthesis of volatile fluorinated and non-fluorinated metal-beta-ketonate and metal-beta-ketoiminato complexes
US5273775A (en) * 1990-09-12 1993-12-28 Air Products And Chemicals, Inc. Process for selectively depositing copper aluminum alloy onto a substrate
US5096737A (en) 1990-10-24 1992-03-17 International Business Machines Corporation Ligand stabilized +1 metal beta-diketonate coordination complexes and their use in chemical vapor deposition of metal thin films
US5098516A (en) * 1990-12-31 1992-03-24 Air Products And Chemicals, Inc. Processes for the chemical vapor deposition of copper and etching of copper
US5187300A (en) * 1991-02-04 1993-02-16 Air Products And Chemicals, Inc. Volatile precursors for copper CVD
US5085731A (en) * 1991-02-04 1992-02-04 Air Products And Chemicals, Inc. Volatile liquid precursors for the chemical vapor deposition of copper
US5144049A (en) * 1991-02-04 1992-09-01 Air Products And Chemicals, Inc. Volatile liquid precursors for the chemical vapor deposition of copper
CA2082771C (en) * 1992-11-12 1998-02-10 Vu Quoc Ho Method for forming interconnect structures for integrated circuits
US5913147A (en) * 1997-01-21 1999-06-15 Advanced Micro Devices, Inc. Method for fabricating copper-aluminum metallization
US6001730A (en) * 1997-10-20 1999-12-14 Motorola, Inc. Chemical mechanical polishing (CMP) slurry for polishing copper interconnects which use tantalum-based barrier layers

Also Published As

Publication number Publication date
US6204176B1 (en) 2001-03-20
EP1047807A1 (de) 2000-11-02
WO2000028107A1 (en) 2000-05-18
JP3729739B2 (ja) 2005-12-21
TW518371B (en) 2003-01-21
EP1047807B1 (de) 2004-03-17
KR100347834B1 (ko) 2002-08-07
JP2002529602A (ja) 2002-09-10
KR20010034018A (ko) 2001-04-25
DE69915592T2 (de) 2005-02-03

Similar Documents

Publication Publication Date Title
DE69937326D1 (de) Verfahren zur bestimmung eines substrates
DE69801032D1 (de) Verfahren zur Beschichtung eines Gegenstandes mit einem Polysilsesquioxan
DE69912376D1 (de) Verfahren zur herstellung eines halbleiterbauelements
DE69304924D1 (de) Verfahren zur herstellung eines beschichteten schleifmittels mit einem leitenden träger.
ATE204250T1 (de) Verfahren zur aufbereitung eines kohlenwasserstoffgases
DE69822949D1 (de) Verfahren zur quantitativen Messung eines Substrats
DE69933300D1 (de) Verfahren zur entwässerung komplexer schlämme
DE69824302D1 (de) Verfahren zur bearbeitung eines metallstreifens
DE69522464T2 (de) Verfahren zur Innenbeschichtung eines Rohres
DE69831064D1 (de) Verfahren zur Bestimmung der Position eines Punktes
DE69730429D1 (de) Verfahren zum kontinuierlichen beschichten eines sich bewegenden substrats mit einem metalldampf
DE50004625D1 (de) Verfahren zur Ermittlung der Schichtdickenverteilung in einer Lackschicht
DE69922617D1 (de) Verfahren zur Herstellung eines Halbleiterbauelementes
DE69629431D1 (de) Verfahren zur herstellung eines niederschlags aus metalloxid
DE69915592D1 (de) BESCHICHTUNGSVERFAHREN ZUR BENUTZUNG EINES Cu(hfac)-VORLÄUFERS MIT EINEM PHENYLETHYLEN-LIGAND
DE69705265T2 (de) Schnittstellenvorrichtung zur Verbindung eines Multimediennetzwerkes mit einem Musiknetzwerk
DE69904438T2 (de) Verfahren zur entfernung von halogenverbindungen in einem gas oder einer flüssigkeit
DE59901823D1 (de) Verfahren zur beschichtung einer oberfläche mit einem trennmittel
DE59908397D1 (de) Verfahren zur Ermittlung eines Pumpenzustandes
DE69701806T2 (de) Verfahren zur leistungsregelung eines anwenderprogramms in einem digitalrechner
ATE251006T1 (de) Verfahren zur herstellung eines mit einer überzugschicht beschichteten schneidelements.
DE69511572T2 (de) Verfahren zur beschichtung eines substrates mit einer pulverlackzusammensetzung
DE60239007D1 (de) Verfahren zur herstellung eines kontinuierlichen überzugs an der oberfläche eines bauteils
DE59902312D1 (de) Anordnung zur Verbindung eines Leichtmetallbauteils mit einem Stahlbauteil und Verfahren zur Herstellung der Anordnung
DE69517393D1 (de) Verfahren zur Innenbeschichtung eines Rohres

Legal Events

Date Code Title Description
8364 No opposition during term of opposition