DE69840437D1 - Verwendung einer opfermaskierungsschicht und rückseitiger belichtung bei der herstellung von löchern zur aufnahme von lichtemittierendem material, und zugehörige lichtemittierende struktur - Google Patents

Verwendung einer opfermaskierungsschicht und rückseitiger belichtung bei der herstellung von löchern zur aufnahme von lichtemittierendem material, und zugehörige lichtemittierende struktur

Info

Publication number
DE69840437D1
DE69840437D1 DE69840437T DE69840437T DE69840437D1 DE 69840437 D1 DE69840437 D1 DE 69840437D1 DE 69840437 T DE69840437 T DE 69840437T DE 69840437 T DE69840437 T DE 69840437T DE 69840437 D1 DE69840437 D1 DE 69840437D1
Authority
DE
Germany
Prior art keywords
light emitting
backlight
manufacture
holes
masking layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69840437T
Other languages
English (en)
Inventor
Duane A Haven
Arthur J Learn
John D Porter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69840437D1 publication Critical patent/DE69840437D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/08—Electrodes intimately associated with a screen on or from which an image or pattern is formed, picked-up, converted or stored, e.g. backing-plates for storage tubes or collecting secondary electrons
    • H01J29/085—Anode plates, e.g. for screens of flat panel displays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
    • H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
    • H01J31/123—Flat display tubes
    • H01J31/125—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection
    • H01J31/127—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection using large area or array sources, i.e. essentially a source for each pixel group
DE69840437T 1997-04-29 1998-04-27 Verwendung einer opfermaskierungsschicht und rückseitiger belichtung bei der herstellung von löchern zur aufnahme von lichtemittierendem material, und zugehörige lichtemittierende struktur Expired - Lifetime DE69840437D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/846,522 US6046539A (en) 1997-04-29 1997-04-29 Use of sacrificial masking layer and backside exposure in forming openings that typically receive light-emissive material
PCT/US1998/007633 WO1998049708A2 (en) 1997-04-29 1998-04-27 Use of sacrificial masking layer and backside exposure in forming a black matrix layer

Publications (1)

Publication Number Publication Date
DE69840437D1 true DE69840437D1 (de) 2009-02-26

Family

ID=25298169

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69840437T Expired - Lifetime DE69840437D1 (de) 1997-04-29 1998-04-27 Verwendung einer opfermaskierungsschicht und rückseitiger belichtung bei der herstellung von löchern zur aufnahme von lichtemittierendem material, und zugehörige lichtemittierende struktur

Country Status (6)

Country Link
US (2) US6046539A (de)
EP (1) EP0979525B1 (de)
JP (1) JP2001522476A (de)
KR (1) KR100369315B1 (de)
DE (1) DE69840437D1 (de)
WO (1) WO1998049708A2 (de)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6049165A (en) 1996-07-17 2000-04-11 Candescent Technologies Corporation Structure and fabrication of flat panel display with specially arranged spacer
US6002199A (en) * 1997-05-30 1999-12-14 Candescent Technologies Corporation Structure and fabrication of electron-emitting device having ladder-like emitter electrode
US6153075A (en) * 1998-02-26 2000-11-28 Micron Technology, Inc. Methods using electrophoretically deposited patternable material
US6319381B1 (en) * 1998-06-11 2001-11-20 Micron Technology, Inc. Methods of forming a face plate assembly of a color display
DE69911228T2 (de) * 1998-07-08 2004-04-01 Matsushita Electric Industrial Co., Ltd., Kadoma Verfahren zur herstellung von plasma-anzeigetafeln mit hoher bildqualität und herstellungsvorrichtung
JP4267122B2 (ja) * 1999-02-19 2009-05-27 アバゴ・テクノロジーズ・イーシービーユー・アイピー（シンガポール）プライベート・リミテッド フォトリソグラフィ方法及びフォトリソグラフィを行うための装置構成
US6696223B2 (en) 1999-02-19 2004-02-24 Agilent Technologies, Inc. Method for performing photolithography
KR100476043B1 (ko) * 1999-06-21 2005-03-10 비오이 하이디스 테크놀로지 주식회사 전계 방출 표시 소자 및 그 제조방법
JP3747154B2 (ja) * 1999-12-28 2006-02-22 キヤノン株式会社 画像形成装置
US6307327B1 (en) * 2000-01-26 2001-10-23 Motorola, Inc. Method for controlling spacer visibility
KR100509595B1 (ko) * 2000-02-11 2005-08-22 삼성에스디아이 주식회사 플라즈마 표시장치
US6972893B2 (en) * 2001-06-11 2005-12-06 Sipix Imaging, Inc. Process for imagewise opening and filling color display components and color displays manufactured thereof
US7052571B2 (en) * 2000-03-03 2006-05-30 Sipix Imaging, Inc. Electrophoretic display and process for its manufacture
JP2001305570A (ja) * 2000-04-24 2001-10-31 Nec Corp 表示パネルモジュール及びその製造方法
US6432593B1 (en) * 2000-05-31 2002-08-13 Candescent Technologies Corporation Gripping multi-level structure
US6562551B1 (en) * 2000-05-31 2003-05-13 Candescent Technologies Corporation Gripping multi-level black matrix
TWI270911B (en) * 2000-07-28 2007-01-11 Candescent Technologies Inc Protected substrate structure for a field emission display device
US6747406B1 (en) * 2000-08-07 2004-06-08 General Electric Company LED cross-linkable phospor coating
CN100446161C (zh) 2000-10-10 2008-12-24 松下电器产业株式会社 等离子体显示屏
US7315115B1 (en) * 2000-10-27 2008-01-01 Canon Kabushiki Kaisha Light-emitting and electron-emitting devices having getter regions
US6812636B2 (en) 2001-03-30 2004-11-02 Candescent Technologies Corporation Light-emitting device having light-emissive particles partially coated with light-reflective or/and getter material
US6630786B2 (en) * 2001-03-30 2003-10-07 Candescent Technologies Corporation Light-emitting device having light-reflective layer formed with, or/and adjacent to, material that enhances device performance
US7385751B2 (en) * 2001-06-11 2008-06-10 Sipix Imaging, Inc. Process for imagewise opening and filling color display components and color displays manufactured thereof
US6742257B1 (en) * 2001-10-02 2004-06-01 Candescent Technologies Corporation Method of forming powder metal phosphor matrix and gripper structures in wall support
KR100456144B1 (ko) * 2002-02-28 2004-11-08 엘지전자 주식회사 플라즈마 디스플레이 패널용 블랙매트릭스 및 이를 이용한플라즈마 디스플레이 패널
JP2005268119A (ja) * 2004-03-19 2005-09-29 Noritake Co Ltd 平面ディスプレイ
JP3774724B2 (ja) 2004-08-19 2006-05-17 キヤノン株式会社 発光体基板および画像表示装置、並びに該画像表示装置を用いた情報表示再生装置
KR20060059747A (ko) * 2004-11-29 2006-06-02 삼성에스디아이 주식회사 전자방출 표시장치
JP4934996B2 (ja) * 2005-06-08 2012-05-23 ソニー株式会社 平面型表示装置の製造方法
KR20070027988A (ko) * 2005-08-30 2007-03-12 삼성에스디아이 주식회사 전자 방출 표시 디바이스
US7612859B2 (en) * 2005-10-31 2009-11-03 Hewlett-Packard Development Company, L.P. Ultra-violet radiation absorbing grid
US7795615B2 (en) * 2005-11-08 2010-09-14 Infineon Technologies Ag Capacitor integrated in a structure surrounding a die
KR20070103904A (ko) * 2006-04-20 2007-10-25 삼성에스디아이 주식회사 전자 방출 표시 디바이스
KR100778517B1 (ko) * 2006-10-31 2007-11-22 삼성에스디아이 주식회사 발광 장치 및 표시 장치
TWI476959B (zh) * 2010-04-11 2015-03-11 Achrolux Inc 轉移均勻螢光層至一物件上之方法及所製得之發光結構
CN101872705B (zh) * 2010-07-21 2013-06-05 福州大学 可消气真空阳极板的制造方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5847811B2 (ja) * 1974-06-17 1983-10-25 株式会社日立製作所 ケイコウメンノ セイゾウホウホウ
US5614781A (en) * 1992-04-10 1997-03-25 Candescent Technologies Corporation Structure and operation of high voltage supports
DE3538167A1 (de) * 1985-10-26 1987-04-30 Standard Elektrik Lorenz Ag Farbbildwiedergabevorrichtung
US5160871A (en) * 1989-06-19 1992-11-03 Matsushita Electric Industrial Co., Ltd. Flat configuration image display apparatus and manufacturing method thereof
DE4242802A1 (de) * 1991-12-17 1993-07-08 Fuji Photo Film Co Ltd
US5424605A (en) * 1992-04-10 1995-06-13 Silicon Video Corporation Self supporting flat video display
US5477105A (en) * 1992-04-10 1995-12-19 Silicon Video Corporation Structure of light-emitting device with raised black matrix for use in optical devices such as flat-panel cathode-ray tubes
JPH06338273A (ja) * 1993-05-28 1994-12-06 Matsushita Electric Ind Co Ltd 画像表示素子
JP3252545B2 (ja) * 1993-07-21 2002-02-04 ソニー株式会社 電界放出型カソードを用いたフラットディスプレイ
US5559389A (en) * 1993-09-08 1996-09-24 Silicon Video Corporation Electron-emitting devices having variously constituted electron-emissive elements, including cones or pedestals
US5564959A (en) * 1993-09-08 1996-10-15 Silicon Video Corporation Use of charged-particle tracks in fabricating gated electron-emitting devices
US5462467A (en) * 1993-09-08 1995-10-31 Silicon Video Corporation Fabrication of filamentary field-emission device, including self-aligned gate
US5578899A (en) * 1994-11-21 1996-11-26 Silicon Video Corporation Field emission device with internal structure for aligning phosphor pixels with corresponding field emitters
US5543683A (en) * 1994-11-21 1996-08-06 Silicon Video Corporation Faceplate for field emission display including wall gripper structures
US5650690A (en) * 1994-11-21 1997-07-22 Candescent Technologies, Inc. Backplate of field emission device with self aligned focus structure and spacer wall locators
US5718991A (en) * 1996-12-27 1998-02-17 Industrial Technology Research Institute Method for making photomasks having regions of different light transmissivities
US5818162A (en) * 1997-03-31 1998-10-06 Candescent Technologies Corporation Multi-level conductive black matrix

Also Published As

Publication number Publication date
EP0979525A2 (de) 2000-02-16
JP2001522476A (ja) 2001-11-13
EP0979525B1 (de) 2009-01-07
WO1998049708A2 (en) 1998-11-05
US6046539A (en) 2000-04-04
WO1998049708A3 (en) 1999-03-18
KR100369315B1 (ko) 2003-01-24
KR20010006321A (ko) 2001-01-26
US6288483B1 (en) 2001-09-11
EP0979525A4 (de) 2000-09-27

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