DE69805559D1 - Material zur Herstellung von Feinstrukturen - Google Patents

Material zur Herstellung von Feinstrukturen

Info

Publication number
DE69805559D1
DE69805559D1 DE69805559T DE69805559T DE69805559D1 DE 69805559 D1 DE69805559 D1 DE 69805559D1 DE 69805559 T DE69805559 T DE 69805559T DE 69805559 T DE69805559 T DE 69805559T DE 69805559 D1 DE69805559 D1 DE 69805559D1
Authority
DE
Germany
Prior art keywords
production
fine structures
fine
structures
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69805559T
Other languages
English (en)
Other versions
DE69805559T2 (de
Inventor
Masayuki Endo
Masamitsu Shirai
Masahiro Tsunooka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of DE69805559D1 publication Critical patent/DE69805559D1/de
Application granted granted Critical
Publication of DE69805559T2 publication Critical patent/DE69805559T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/265—Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/115—Cationic or anionic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/12—Nitrogen compound containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/124—Carbonyl compound containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S522/00—Synthetic resins or natural rubbers -- part of the class 520 series
    • Y10S522/904—Monomer or polymer contains initiating group

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
DE69805559T 1997-02-20 1998-02-19 Material zur Herstellung von Feinstrukturen Expired - Lifetime DE69805559T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP3655197 1997-02-20
JP22172497 1997-08-18
JP230098 1998-01-08

Publications (2)

Publication Number Publication Date
DE69805559D1 true DE69805559D1 (de) 2002-07-04
DE69805559T2 DE69805559T2 (de) 2002-09-26

Family

ID=27275289

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69805559T Expired - Lifetime DE69805559T2 (de) 1997-02-20 1998-02-19 Material zur Herstellung von Feinstrukturen

Country Status (3)

Country Link
US (2) US6017683A (de)
EP (2) EP1028353A1 (de)
DE (1) DE69805559T2 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0791856B1 (de) * 1996-02-26 2001-10-17 Matsushita Electric Industrial Co., Ltd. Bilderzeugungsmaterial und Verfahren
US6331378B1 (en) * 1998-02-25 2001-12-18 Matsushita Electric Industrial Co., Ltd. Pattern forming method
KR100610165B1 (ko) * 1998-12-07 2006-08-09 후지 샤신 필름 가부시기가이샤 포지티브 포토레지스트 조성물
US6528240B1 (en) * 1999-03-12 2003-03-04 Matsushita Electric Industrial Co., Ltd. Pattern formation method
DE10120660B8 (de) * 2001-04-27 2006-09-28 Infineon Technologies Ag Verfahren zur Strukturierung einer Photolackschicht
DE10120674B4 (de) * 2001-04-27 2005-06-16 Infineon Technologies Ag Verfahren zur Strukturierung einer Photolackschicht
DE10120676B4 (de) * 2001-04-27 2005-06-16 Infineon Technologies Ag Verfahren zur Strukturierung einer Photolackschicht
DE10120675B4 (de) * 2001-04-27 2005-07-21 Infineon Technologies Ag Verfahren zur Strukturierung einer Photolackschicht
DE10120673B4 (de) * 2001-04-27 2007-01-25 Infineon Technologies Ag Verfahren zur Strukturierung einer Photolackschicht
DE10120661A1 (de) * 2001-04-27 2002-11-21 Infineon Technologies Ag Photolackzusammensetzung und Verfahren zur Strukturierung einer Photolackschicht
US7534548B2 (en) * 2005-06-02 2009-05-19 Hynix Semiconductor Inc. Polymer for immersion lithography and photoresist composition
JP5827939B2 (ja) 2012-12-17 2015-12-02 東京エレクトロン株式会社 成膜方法、プログラム、コンピュータ記憶媒体及び成膜装置
JP5871844B2 (ja) 2013-03-06 2016-03-01 東京エレクトロン株式会社 基板処理方法、プログラム、コンピュータ記憶媒体及び基板処理システム
JP2014175357A (ja) * 2013-03-06 2014-09-22 Tokyo Electron Ltd 基板処理方法、プログラム、コンピュータ記憶媒体及び基板処理システム
US9329481B2 (en) 2013-11-20 2016-05-03 Eastman Kodak Company Electroless plating method using halide
US9316914B2 (en) 2013-11-20 2016-04-19 Eastman Kodak Company Electroless plating method using non-reducing agent
US9268223B2 (en) 2013-11-20 2016-02-23 Eastman Kodak Company Forming conductive metal pattern using reactive polymers
US9235128B2 (en) 2013-11-20 2016-01-12 Eastman Kodak Company Forming patterns using crosslinkable reactive polymers
US9081281B2 (en) 2013-11-20 2015-07-14 Eastman Kodak Company Electroless plating method
US9228039B2 (en) 2013-11-20 2016-01-05 Eastman Kodak Company Crosslinkable reactive polymers
JP5926753B2 (ja) * 2014-02-26 2016-05-25 東京エレクトロン株式会社 基板処理方法、プログラム、コンピュータ記憶媒体及び基板処理システム
US10394126B2 (en) * 2015-07-17 2019-08-27 Taiwan Semiconductor Manufacturing Company, Ltd. Photolithography process and materials
DE102019102340A1 (de) 2019-01-30 2020-07-30 Leibniz-Institut Für Polymerforschung Dresden E.V. Verfahren zur modifizierung von oberflächen
CN113327842A (zh) * 2020-02-28 2021-08-31 长鑫存储技术有限公司 半导体结构及其制备方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5650261A (en) * 1989-10-27 1997-07-22 Rohm And Haas Company Positive acting photoresist comprising a photoacid, a photobase and a film forming acid-hardening resin system
JPH05150459A (ja) * 1991-05-24 1993-06-18 Nippon Paint Co Ltd レジストパターンの形成方法
DE4226464B4 (de) * 1992-08-10 2005-06-02 Infineon Technologies Ag Positivresist
JP3148426B2 (ja) * 1992-12-25 2001-03-19 クラリアント インターナショナル リミテッド パターン形成用材料
JPH07140663A (ja) * 1993-06-25 1995-06-02 Hitachi Ltd 感光性樹脂組成物、及び該組成物を用いたパターン形成方法及びそれを用いた電子装置の製造方法
JPH07261393A (ja) * 1994-03-25 1995-10-13 Toshiba Corp ネガ型レジスト組成物
KR0174316B1 (ko) * 1994-07-05 1999-04-01 모리시다 요이치 미세패턴 형성방법
JPH08146608A (ja) * 1994-11-16 1996-06-07 Hitachi Ltd 感光性樹脂組成物とそれを用いた電子装置の製法
JPH09134014A (ja) * 1995-11-09 1997-05-20 Hitachi Ltd 感光性樹脂組成物、その組成物を用いたパターン形成方法
EP0791856B1 (de) * 1996-02-26 2001-10-17 Matsushita Electric Industrial Co., Ltd. Bilderzeugungsmaterial und Verfahren
JP3751703B2 (ja) * 1997-02-10 2006-03-01 富士写真フイルム株式会社 平版印刷版用原版

Also Published As

Publication number Publication date
US6017683A (en) 2000-01-25
EP0860740A1 (de) 1998-08-26
EP0860740B1 (de) 2002-05-29
EP1028353A1 (de) 2000-08-16
DE69805559T2 (de) 2002-09-26
US6261736B1 (en) 2001-07-17

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Legal Events

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8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PANASONIC CORP., KADOMA, OSAKA, JP