DE69835180D1 - Mikrostruktur und Verfahren zu ihrer Herstellung - Google Patents
Mikrostruktur und Verfahren zu ihrer HerstellungInfo
- Publication number
- DE69835180D1 DE69835180D1 DE69835180T DE69835180T DE69835180D1 DE 69835180 D1 DE69835180 D1 DE 69835180D1 DE 69835180 T DE69835180 T DE 69835180T DE 69835180 T DE69835180 T DE 69835180T DE 69835180 D1 DE69835180 D1 DE 69835180D1
- Authority
- DE
- Germany
- Prior art keywords
- microstructure
- preparation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00111—Tips, pillars, i.e. raised structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/86—Electrodes with an enlarged surface, e.g. formed by texturisation having horizontal extensions
- H01L28/87—Electrodes with an enlarged surface, e.g. formed by texturisation having horizontal extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
- H01L28/91—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0102—Surface micromachining
- B81C2201/0105—Sacrificial layer
- B81C2201/0109—Sacrificial layers not provided for in B81C2201/0107 - B81C2201/0108
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0156—Lithographic techniques
- B81C2201/0159—Lithographic techniques not provided for in B81C2201/0157
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/86—Electrodes with an enlarged surface, e.g. formed by texturisation having horizontal extensions
- H01L28/88—Electrodes with an enlarged surface, e.g. formed by texturisation having horizontal extensions made by patterning layers, e.g. by etching conductive layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
- H01L28/92—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by patterning layers, e.g. by etching conductive layers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
- Micromachines (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US829255 | 1992-02-03 | ||
US08/829,255 US5926716A (en) | 1997-03-31 | 1997-03-31 | Method for forming a structure |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69835180D1 true DE69835180D1 (de) | 2006-08-24 |
DE69835180T2 DE69835180T2 (de) | 2007-06-14 |
Family
ID=25253980
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69835180T Expired - Lifetime DE69835180T2 (de) | 1997-03-31 | 1998-03-17 | Mikrostruktur und Verfahren zu ihrer Herstellung |
Country Status (7)
Country | Link |
---|---|
US (2) | US5926716A (de) |
EP (1) | EP0869556B1 (de) |
JP (1) | JPH10294442A (de) |
KR (1) | KR100537282B1 (de) |
CN (1) | CN1135614C (de) |
DE (1) | DE69835180T2 (de) |
TW (1) | TW434840B (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6421223B2 (en) | 1999-03-01 | 2002-07-16 | Micron Technology, Inc. | Thin film structure that may be used with an adhesion layer |
DE19948087B4 (de) * | 1999-10-06 | 2008-04-17 | Evotec Ag | Verfahren zur Herstellung eines Reaktionssubstrats |
US8851442B2 (en) | 2008-01-22 | 2014-10-07 | Honeywell International Inc. | Aerogel-bases mold for MEMS fabrication and formation thereof |
CN108598262B (zh) * | 2018-06-13 | 2023-10-27 | 青岛科技大学 | 一种铁电薄膜变容器的制备方法 |
FI129648B (en) * | 2019-12-20 | 2022-06-15 | Aalto Univ Foundation Sr | Electrode structure |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4918032A (en) * | 1988-04-13 | 1990-04-17 | General Motors Corporation | Method for fabricating three-dimensional microstructures and a high-sensitivity integrated vibration sensor using such microstructures |
JP2838412B2 (ja) * | 1988-06-10 | 1998-12-16 | 三菱電機株式会社 | 半導体記憶装置のキャパシタおよびその製造方法 |
JPH07114260B2 (ja) * | 1989-11-23 | 1995-12-06 | 財団法人韓国電子通信研究所 | コップ状のポリシリコン貯蔵電極を有するスタック構造のdramセル,およびその製造方法 |
JPH05183121A (ja) * | 1991-04-01 | 1993-07-23 | Fujitsu Ltd | 半導体装置とその製造方法 |
US5240871A (en) * | 1991-09-06 | 1993-08-31 | Micron Technology, Inc. | Corrugated storage contact capacitor and method for forming a corrugated storage contact capacitor |
US5126916A (en) * | 1991-12-20 | 1992-06-30 | Industrial Technology Research Institute | Stacked capacitor dram cell and method of fabricating |
US5352622A (en) * | 1992-04-08 | 1994-10-04 | National Semiconductor Corporation | Stacked capacitor with a thin film ceramic oxide layer |
US5382547A (en) * | 1992-07-31 | 1995-01-17 | Sultan; Pervaiz | Void free oxide fill for interconnect spaces |
US5543346A (en) * | 1993-08-31 | 1996-08-06 | Hyundai Electronics Industries Co., Ltd. | Method of fabricating a dynamic random access memory stacked capacitor |
US5436188A (en) * | 1994-04-26 | 1995-07-25 | Industrial Technology Research Institute | Dram cell process having elk horn shaped capacitor |
KR960006030A (ko) * | 1994-07-18 | 1996-02-23 | 김주용 | 반도체소자의 캐패시터 제조방법 |
KR0126623B1 (ko) * | 1994-08-03 | 1997-12-26 | 김주용 | 반도체소자의 캐패시터 제조방법 |
US5518950A (en) * | 1994-09-02 | 1996-05-21 | Advanced Micro Devices, Inc. | Spin-on-glass filled trench isolation method for semiconductor circuits |
US5491104A (en) * | 1994-09-30 | 1996-02-13 | Industrial Technology Research Institute | Method for fabricating DRAM cells having fin-type stacked storage capacitors |
US5438011A (en) * | 1995-03-03 | 1995-08-01 | Micron Technology, Inc. | Method of forming a capacitor using a photoresist contact sidewall having standing wave ripples |
EP0814498A1 (de) * | 1996-05-31 | 1997-12-29 | Texas Instruments Incorporated | Kondensator und Verfahren zu seiner Herstellung |
-
1997
- 1997-03-31 US US08/829,255 patent/US5926716A/en not_active Expired - Lifetime
-
1998
- 1998-03-17 DE DE69835180T patent/DE69835180T2/de not_active Expired - Lifetime
- 1998-03-17 EP EP98104739A patent/EP0869556B1/de not_active Expired - Lifetime
- 1998-03-26 KR KR1019980010419A patent/KR100537282B1/ko not_active IP Right Cessation
- 1998-03-26 TW TW087104538A patent/TW434840B/zh not_active IP Right Cessation
- 1998-03-31 JP JP10086479A patent/JPH10294442A/ja not_active Withdrawn
- 1998-03-31 CN CNB981051979A patent/CN1135614C/zh not_active Expired - Lifetime
- 1998-11-20 US US09/197,391 patent/US6015988A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0869556B1 (de) | 2006-07-12 |
KR19980080675A (ko) | 1998-11-25 |
DE69835180T2 (de) | 2007-06-14 |
KR100537282B1 (ko) | 2006-04-21 |
US6015988A (en) | 2000-01-18 |
TW434840B (en) | 2001-05-16 |
EP0869556A1 (de) | 1998-10-07 |
CN1195190A (zh) | 1998-10-07 |
CN1135614C (zh) | 2004-01-21 |
US5926716A (en) | 1999-07-20 |
JPH10294442A (ja) | 1998-11-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: QIMONDA AG, 81739 MUENCHEN, DE |