TW434840B - Method for fabricating microstructure - Google Patents
Method for fabricating microstructure Download PDFInfo
- Publication number
- TW434840B TW434840B TW087104538A TW87104538A TW434840B TW 434840 B TW434840 B TW 434840B TW 087104538 A TW087104538 A TW 087104538A TW 87104538 A TW87104538 A TW 87104538A TW 434840 B TW434840 B TW 434840B
- Authority
- TW
- Taiwan
- Prior art keywords
- forming
- deposited
- manufacturing
- flowable
- cover
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 20
- 239000000463 material Substances 0.000 claims abstract description 94
- 239000003990 capacitor Substances 0.000 claims abstract description 27
- 230000009969 flowable effect Effects 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000000151 deposition Methods 0.000 claims abstract description 19
- 239000011521 glass Substances 0.000 claims abstract description 9
- 230000008021 deposition Effects 0.000 claims abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 32
- 238000004519 manufacturing process Methods 0.000 claims description 22
- 239000000377 silicon dioxide Substances 0.000 claims description 14
- 235000012239 silicon dioxide Nutrition 0.000 claims description 14
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 238000004528 spin coating Methods 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 3
- 230000002079 cooperative effect Effects 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 230000000717 retained effect Effects 0.000 claims description 2
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 claims 2
- 238000005242 forging Methods 0.000 claims 1
- 238000007740 vapor deposition Methods 0.000 claims 1
- 239000012808 vapor phase Substances 0.000 claims 1
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 abstract description 6
- -1 for example Polymers 0.000 abstract description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 13
- 230000015654 memory Effects 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000003989 dielectric material Substances 0.000 description 5
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000004576 sand Substances 0.000 description 2
- 238000005019 vapor deposition process Methods 0.000 description 2
- 101000905241 Mus musculus Heart- and neural crest derivatives-expressed protein 1 Proteins 0.000 description 1
- 238000005273 aeration Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000037237 body shape Effects 0.000 description 1
- 230000005465 channeling Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000001815 facial effect Effects 0.000 description 1
- 210000004744 fore-foot Anatomy 0.000 description 1
- 238000003958 fumigation Methods 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 229930182470 glycoside Natural products 0.000 description 1
- 150000002338 glycosides Chemical class 0.000 description 1
- 238000010237 hybrid technique Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical class C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 235000015170 shellfish Nutrition 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00111—Tips, pillars, i.e. raised structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/86—Electrodes with an enlarged surface, e.g. formed by texturisation having horizontal extensions
- H01L28/87—Electrodes with an enlarged surface, e.g. formed by texturisation having horizontal extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
- H01L28/91—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0102—Surface micromachining
- B81C2201/0105—Sacrificial layer
- B81C2201/0109—Sacrificial layers not provided for in B81C2201/0107 - B81C2201/0108
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0156—Lithographic techniques
- B81C2201/0159—Lithographic techniques not provided for in B81C2201/0157
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/86—Electrodes with an enlarged surface, e.g. formed by texturisation having horizontal extensions
- H01L28/88—Electrodes with an enlarged surface, e.g. formed by texturisation having horizontal extensions made by patterning layers, e.g. by etching conductive layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
- H01L28/92—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by patterning layers, e.g. by etching conductive layers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Micromachines (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/829,255 US5926716A (en) | 1997-03-31 | 1997-03-31 | Method for forming a structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW434840B true TW434840B (en) | 2001-05-16 |
Family
ID=25253980
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW087104538A TW434840B (en) | 1997-03-31 | 1998-03-26 | Method for fabricating microstructure |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US5926716A (de) |
| EP (1) | EP0869556B1 (de) |
| JP (1) | JPH10294442A (de) |
| KR (1) | KR100537282B1 (de) |
| CN (1) | CN1135614C (de) |
| DE (1) | DE69835180T2 (de) |
| TW (1) | TW434840B (de) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6421223B2 (en) * | 1999-03-01 | 2002-07-16 | Micron Technology, Inc. | Thin film structure that may be used with an adhesion layer |
| DE19948087B4 (de) * | 1999-10-06 | 2008-04-17 | Evotec Ag | Verfahren zur Herstellung eines Reaktionssubstrats |
| US8851442B2 (en) | 2008-01-22 | 2014-10-07 | Honeywell International Inc. | Aerogel-bases mold for MEMS fabrication and formation thereof |
| CN108598262B (zh) * | 2018-06-13 | 2023-10-27 | 青岛科技大学 | 一种铁电薄膜变容器的制备方法 |
| FI129648B (en) * | 2019-12-20 | 2022-06-15 | Aalto Univ Foundation Sr | Electrode structure |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4918032A (en) * | 1988-04-13 | 1990-04-17 | General Motors Corporation | Method for fabricating three-dimensional microstructures and a high-sensitivity integrated vibration sensor using such microstructures |
| JP2838412B2 (ja) * | 1988-06-10 | 1998-12-16 | 三菱電機株式会社 | 半導体記憶装置のキャパシタおよびその製造方法 |
| JPH07114260B2 (ja) * | 1989-11-23 | 1995-12-06 | 財団法人韓国電子通信研究所 | コップ状のポリシリコン貯蔵電極を有するスタック構造のｄｒａｍセル，およびその製造方法 |
| JPH05183121A (ja) * | 1991-04-01 | 1993-07-23 | Fujitsu Ltd | 半導体装置とその製造方法 |
| US5240871A (en) * | 1991-09-06 | 1993-08-31 | Micron Technology, Inc. | Corrugated storage contact capacitor and method for forming a corrugated storage contact capacitor |
| US5126916A (en) * | 1991-12-20 | 1992-06-30 | Industrial Technology Research Institute | Stacked capacitor dram cell and method of fabricating |
| US5352622A (en) * | 1992-04-08 | 1994-10-04 | National Semiconductor Corporation | Stacked capacitor with a thin film ceramic oxide layer |
| US5382547A (en) * | 1992-07-31 | 1995-01-17 | Sultan; Pervaiz | Void free oxide fill for interconnect spaces |
| US5543346A (en) * | 1993-08-31 | 1996-08-06 | Hyundai Electronics Industries Co., Ltd. | Method of fabricating a dynamic random access memory stacked capacitor |
| US5436188A (en) * | 1994-04-26 | 1995-07-25 | Industrial Technology Research Institute | Dram cell process having elk horn shaped capacitor |
| KR960006030A (ko) * | 1994-07-18 | 1996-02-23 | 김주용 | 반도체소자의 캐패시터 제조방법 |
| KR0126623B1 (ko) * | 1994-08-03 | 1997-12-26 | 김주용 | 반도체소자의 캐패시터 제조방법 |
| US5518950A (en) * | 1994-09-02 | 1996-05-21 | Advanced Micro Devices, Inc. | Spin-on-glass filled trench isolation method for semiconductor circuits |
| US5491104A (en) * | 1994-09-30 | 1996-02-13 | Industrial Technology Research Institute | Method for fabricating DRAM cells having fin-type stacked storage capacitors |
| US5438011A (en) * | 1995-03-03 | 1995-08-01 | Micron Technology, Inc. | Method of forming a capacitor using a photoresist contact sidewall having standing wave ripples |
| JPH1084095A (ja) * | 1996-05-31 | 1998-03-31 | Texas Instr Inc <Ti> | 高密度メモリ応用の波形頂部コンデンサ構造 |
-
1997
- 1997-03-31 US US08/829,255 patent/US5926716A/en not_active Expired - Lifetime
-
1998
- 1998-03-17 DE DE69835180T patent/DE69835180T2/de not_active Expired - Lifetime
- 1998-03-17 EP EP98104739A patent/EP0869556B1/de not_active Expired - Lifetime
- 1998-03-26 KR KR1019980010419A patent/KR100537282B1/ko not_active IP Right Cessation
- 1998-03-26 TW TW087104538A patent/TW434840B/zh not_active IP Right Cessation
- 1998-03-31 JP JP10086479A patent/JPH10294442A/ja not_active Withdrawn
- 1998-03-31 CN CNB981051979A patent/CN1135614C/zh not_active Expired - Lifetime
- 1998-11-20 US US09/197,391 patent/US6015988A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| KR19980080675A (ko) | 1998-11-25 |
| US6015988A (en) | 2000-01-18 |
| KR100537282B1 (ko) | 2006-04-21 |
| EP0869556B1 (de) | 2006-07-12 |
| DE69835180D1 (de) | 2006-08-24 |
| US5926716A (en) | 1999-07-20 |
| DE69835180T2 (de) | 2007-06-14 |
| CN1195190A (zh) | 1998-10-07 |
| JPH10294442A (ja) | 1998-11-04 |
| EP0869556A1 (de) | 1998-10-07 |
| CN1135614C (zh) | 2004-01-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |