DE69833674D1 - Ferroelektrischer speicher und verfahren zur herstellung - Google Patents

Ferroelektrischer speicher und verfahren zur herstellung

Info

Publication number
DE69833674D1
DE69833674D1 DE69833674T DE69833674T DE69833674D1 DE 69833674 D1 DE69833674 D1 DE 69833674D1 DE 69833674 T DE69833674 T DE 69833674T DE 69833674 T DE69833674 T DE 69833674T DE 69833674 D1 DE69833674 D1 DE 69833674D1
Authority
DE
Germany
Prior art keywords
manufacture
ferroelectric memory
ferroelectric
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69833674T
Other languages
English (en)
Other versions
DE69833674T2 (de
Inventor
Takashi Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Application granted granted Critical
Publication of DE69833674D1 publication Critical patent/DE69833674D1/de
Publication of DE69833674T2 publication Critical patent/DE69833674T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/516—Insulating materials associated therewith with at least one ferroelectric layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
    • H10B51/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the memory core region

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
DE69833674T 1997-11-14 1998-10-30 Ferroelektrischer speicher und verfahren zur herstellung Expired - Lifetime DE69833674T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP31335897 1997-11-14
JP31335897A JP3221854B2 (ja) 1997-11-14 1997-11-14 強誘電体層を用いた半導体メモリ
PCT/JP1998/004954 WO1999026284A1 (fr) 1997-11-14 1998-10-30 Memoire ferroelectrique ou son procede de production

Publications (2)

Publication Number Publication Date
DE69833674D1 true DE69833674D1 (de) 2006-04-27
DE69833674T2 DE69833674T2 (de) 2006-10-19

Family

ID=18040304

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69833674T Expired - Lifetime DE69833674T2 (de) 1997-11-14 1998-10-30 Ferroelektrischer speicher und verfahren zur herstellung

Country Status (9)

Country Link
US (1) US6396093B1 (de)
EP (1) EP1039536B1 (de)
JP (1) JP3221854B2 (de)
KR (1) KR100553379B1 (de)
CN (1) CN1123929C (de)
CA (1) CA2310005A1 (de)
DE (1) DE69833674T2 (de)
TW (1) TW456043B (de)
WO (1) WO1999026284A1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002082510A1 (en) * 2000-08-24 2002-10-17 Cova Technologies Incorporated Single transistor rare earth manganite ferroelectric nonvolatile memory cell
WO2002071477A1 (en) 2001-03-02 2002-09-12 Cova Technologies Incorporated Single transistor rare earth manganite ferroelectric nonvolatile memory cell
JP2002313966A (ja) * 2001-04-16 2002-10-25 Yasuo Tarui トランジスタ型強誘電体不揮発性記憶素子とその製造方法
US6825517B2 (en) * 2002-08-28 2004-11-30 Cova Technologies, Inc. Ferroelectric transistor with enhanced data retention
US6888736B2 (en) 2002-09-19 2005-05-03 Cova Technologies, Inc. Ferroelectric transistor for storing two data bits
US6714435B1 (en) 2002-09-19 2004-03-30 Cova Technologies, Inc. Ferroelectric transistor for storing two data bits
JP4785180B2 (ja) * 2004-09-10 2011-10-05 富士通セミコンダクター株式会社 強誘電体メモリ、多値データ記録方法、および多値データ読出し方法
CN101262040B (zh) * 2008-04-24 2010-06-16 湘潭大学 氧化物稀磁半导体/铁电体异质结构及其制备方法
CN104692828B (zh) * 2015-03-06 2017-08-29 西安电子科技大学 多层钛酸钡与多层铁酸钴磁电复合薄膜的制备与转移方法
DE102018213062B3 (de) * 2018-08-03 2019-11-14 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Integrierter elektronischer Schaltkreis mit einem ersten Transistor und einem ferroelektrischen Kondensator und Verfahren zu seiner Herstellung
US11721747B2 (en) * 2021-08-12 2023-08-08 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit, transistor and method of fabricating the same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5384729A (en) * 1991-10-28 1995-01-24 Rohm Co., Ltd. Semiconductor storage device having ferroelectric film
US5307305A (en) * 1991-12-04 1994-04-26 Rohm Co., Ltd. Semiconductor device having field effect transistor using ferroelectric film as gate insulation film
JP3203767B2 (ja) * 1992-06-09 2001-08-27 セイコーエプソン株式会社 強誘電体素子及び半導体記憶装置
US5350705A (en) * 1992-08-25 1994-09-27 National Semiconductor Corporation Ferroelectric memory cell arrangement having a split capacitor plate structure
JP3136045B2 (ja) * 1994-04-28 2001-02-19 沖電気工業株式会社 メモリセルトランジスタ
JP3326666B2 (ja) * 1994-11-10 2002-09-24 ソニー株式会社 半導体メモリセルの作製方法
JPH09121023A (ja) * 1995-10-25 1997-05-06 Olympus Optical Co Ltd 半導体装置

Also Published As

Publication number Publication date
KR20010040268A (ko) 2001-05-15
DE69833674T2 (de) 2006-10-19
EP1039536A1 (de) 2000-09-27
EP1039536A4 (de) 2001-02-07
CN1273696A (zh) 2000-11-15
CA2310005A1 (en) 1999-05-27
JPH11145411A (ja) 1999-05-28
EP1039536B1 (de) 2006-03-01
JP3221854B2 (ja) 2001-10-22
KR100553379B1 (ko) 2006-02-20
CN1123929C (zh) 2003-10-08
TW456043B (en) 2001-09-21
WO1999026284A1 (fr) 1999-05-27
US6396093B1 (en) 2002-05-28

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