DE69817308D1 - Vorrichtung zur anodischen Oxidation und Verfahren und poröses Substrat - Google Patents

Vorrichtung zur anodischen Oxidation und Verfahren und poröses Substrat

Info

Publication number
DE69817308D1
DE69817308D1 DE69817308T DE69817308T DE69817308D1 DE 69817308 D1 DE69817308 D1 DE 69817308D1 DE 69817308 T DE69817308 T DE 69817308T DE 69817308 T DE69817308 T DE 69817308T DE 69817308 D1 DE69817308 D1 DE 69817308D1
Authority
DE
Germany
Prior art keywords
process tank
opening
anodizing
anodizing apparatus
porous substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69817308T
Other languages
English (en)
Other versions
DE69817308T2 (de
Inventor
Satoshi Matsumura
Kenji Yamagata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69817308D1 publication Critical patent/DE69817308D1/de
Publication of DE69817308T2 publication Critical patent/DE69817308T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/32—Anodisation of semiconducting materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/005—Apparatus specially adapted for electrolytic conversion coating
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/02—Tanks; Installations therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76259—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along a porous layer
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/004—Sealing devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Weting (AREA)
  • Formation Of Insulating Films (AREA)
  • Immobilizing And Processing Of Enzymes And Microorganisms (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
DE69817308T 1997-12-26 1998-12-18 Vorrichtung zur anodischen Oxidation und Verfahren und poröses Substrat Expired - Fee Related DE69817308T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP36101397 1997-12-26
JP36101397A JP3413090B2 (ja) 1997-12-26 1997-12-26 陽極化成装置及び陽極化成処理方法

Publications (2)

Publication Number Publication Date
DE69817308D1 true DE69817308D1 (de) 2003-09-25
DE69817308T2 DE69817308T2 (de) 2004-06-17

Family

ID=18471827

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69817308T Expired - Fee Related DE69817308T2 (de) 1997-12-26 1998-12-18 Vorrichtung zur anodischen Oxidation und Verfahren und poröses Substrat

Country Status (10)

Country Link
US (1) US6258240B1 (de)
EP (1) EP0926269B1 (de)
JP (1) JP3413090B2 (de)
KR (1) KR100369731B1 (de)
CN (1) CN1092720C (de)
AT (1) ATE247727T1 (de)
AU (1) AU741464B2 (de)
DE (1) DE69817308T2 (de)
SG (1) SG71181A1 (de)
TW (1) TW540116B (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000277478A (ja) * 1999-03-25 2000-10-06 Canon Inc 陽極化成装置、陽極化成システム、基板の処理装置及び処理方法、並びに基板の製造方法
KR100453454B1 (ko) * 2001-01-09 2004-10-15 텔레포스 주식회사 양극화 반응 장치 및 단위 양극화 반응기
US20040124088A1 (en) * 2002-12-26 2004-07-01 Canon Kabushiki Kaisha Processing apparatus
KR100854576B1 (ko) * 2007-05-16 2008-08-26 주식회사 동부하이텍 반도체 소자의 세정 장치 및 반도체 소자의 세정 방법
KR100897259B1 (ko) * 2007-10-24 2009-05-14 공주대학교 산학협력단 다중조건 다공질 규소층의 제작 방법
JP5908266B2 (ja) * 2011-11-30 2016-04-26 株式会社Ｓｃｒｅｅｎホールディングス 陽極化成装置及びそれを備えた陽極化成システム並びに半導体ウエハ
CN107004630A (zh) * 2014-12-10 2017-08-01 应用材料公司 用于全卷绕多孔硅形成的系统和方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3345274A (en) * 1964-04-22 1967-10-03 Westinghouse Electric Corp Method of making oxide film patterns
US4069121A (en) * 1975-06-27 1978-01-17 Thomson-Csf Method for producing microscopic passages in a semiconductor body for electron-multiplication applications
JPS57126998A (en) * 1981-01-28 1982-08-06 Mishima Kosan Co Ltd Plating apparatus
JPS6094737A (ja) 1983-10-28 1985-05-27 Matsushita Electric Works Ltd 半導体装置の製法
FR2615036B1 (fr) 1987-05-05 1989-08-18 France Etat Machine pour la fabrication de silicium poreux
JP2608351B2 (ja) 1990-08-03 1997-05-07 キヤノン株式会社 半導体部材及び半導体部材の製造方法
JP2734269B2 (ja) * 1991-12-26 1998-03-30 日本電気株式会社 半導体製造装置
JPH0613366A (ja) 1992-04-03 1994-01-21 Internatl Business Mach Corp <Ibm> 多孔性シリコン膜およびデバイスを作成するための浸漬走査方法およびシステム
JPH0631488A (ja) * 1992-07-14 1994-02-08 Matsushita Electric Ind Co Ltd 溶接用位置決め治具
EP0597428B1 (de) 1992-11-09 1997-07-30 Canon Kabushiki Kaisha Anodisierungsapparat mit einer Trägervorrichtung für das zu behandelnde Substrat
JP3201875B2 (ja) 1993-04-27 2001-08-27 キヤノン株式会社 陽極化成装置及び陽極化成法
JP3416190B2 (ja) 1993-03-23 2003-06-16 キヤノン株式会社 陽極化成装置及び陽極化成方法
JPH06338631A (ja) 1993-03-29 1994-12-06 Canon Inc 発光素子及びその製造方法
JPH0837173A (ja) 1994-07-22 1996-02-06 Canon Inc 化成装置
JP3376258B2 (ja) 1996-11-28 2003-02-10 キヤノン株式会社 陽極化成装置及びそれに関連する装置及び方法

Also Published As

Publication number Publication date
US6258240B1 (en) 2001-07-10
DE69817308T2 (de) 2004-06-17
EP0926269B1 (de) 2003-08-20
TW540116B (en) 2003-07-01
SG71181A1 (en) 2000-03-21
JPH11195640A (ja) 1999-07-21
EP0926269A2 (de) 1999-06-30
AU9818398A (en) 1999-07-15
EP0926269A3 (de) 2000-05-31
KR19990063513A (ko) 1999-07-26
KR100369731B1 (ko) 2003-03-17
JP3413090B2 (ja) 2003-06-03
ATE247727T1 (de) 2003-09-15
CN1227284A (zh) 1999-09-01
AU741464B2 (en) 2001-11-29
CN1092720C (zh) 2002-10-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee