DE69815624D1 - FET-Vorrichtung zur Verwendung in Festkörperrelais - Google Patents

FET-Vorrichtung zur Verwendung in Festkörperrelais

Info

Publication number
DE69815624D1
DE69815624D1 DE69815624T DE69815624T DE69815624D1 DE 69815624 D1 DE69815624 D1 DE 69815624D1 DE 69815624 T DE69815624 T DE 69815624T DE 69815624 T DE69815624 T DE 69815624T DE 69815624 D1 DE69815624 D1 DE 69815624D1
Authority
DE
Germany
Prior art keywords
solid state
fet device
state relays
relays
fet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69815624T
Other languages
English (en)
Other versions
DE69815624T2 (de
Inventor
Hidefumi Tamai
Masaya Fukaura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Electronics Corp
Original Assignee
NEC Compound Semiconductor Devices Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Compound Semiconductor Devices Ltd filed Critical NEC Compound Semiconductor Devices Ltd
Application granted granted Critical
Publication of DE69815624D1 publication Critical patent/DE69815624D1/de
Publication of DE69815624T2 publication Critical patent/DE69815624T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H03K17/785—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6874—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor in a symmetrical configuration
DE69815624T 1997-10-17 1998-10-16 FET-Vorrichtung zur Verwendung in Festkörperrelais Expired - Fee Related DE69815624T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP28576197 1997-10-17
JP9285761A JP3013894B2 (ja) 1997-10-17 1997-10-17 Ｆｅｔ装置

Publications (2)

Publication Number Publication Date
DE69815624D1 true DE69815624D1 (de) 2003-07-24
DE69815624T2 DE69815624T2 (de) 2004-04-29

Family

ID=17695717

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69815624T Expired - Fee Related DE69815624T2 (de) 1997-10-17 1998-10-16 FET-Vorrichtung zur Verwendung in Festkörperrelais

Country Status (4)

Country Link
US (1) US6172552B1 (de)
EP (1) EP0910169B1 (de)
JP (1) JP3013894B2 (de)
DE (1) DE69815624T2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10118457A1 (de) * 2001-04-12 2002-05-23 Infineon Technologies Ag Schaltungsanordnung mit einem Leistungstransistor und einer zugehörigen Ansteuerschaltung
CN1913353B (zh) * 2005-08-12 2010-11-03 比亚迪股份有限公司 直流固态继电器
DE102006030448B4 (de) * 2006-06-29 2022-08-18 Phoenix Contact Gmbh & Co. Kg Sichere Ausgangsschaltung mit einem einkanaligen Peripherieanschluss für den Ausgang eines Bus-Teilnehmers
JP2009117528A (ja) 2007-11-05 2009-05-28 Nec Electronics Corp 光半導体リレー装置
GB201015760D0 (en) * 2010-09-21 2010-10-27 Airbus Uk Ltd Aircraft power distribution network
US9935630B2 (en) * 2015-09-18 2018-04-03 Monolithic Power Systems, Inc. AC switch circuit and associated control method
US10554201B2 (en) 2016-07-22 2020-02-04 Abb Schweiz Ag Solid state switch system
US10411694B2 (en) 2016-07-22 2019-09-10 Abb Schweiz Ag Solid state switch system
WO2022030375A1 (ja) * 2020-08-05 2022-02-10 パナソニックＩｐマネジメント株式会社 半導体リレーモジュール
CN113556120A (zh) * 2021-07-16 2021-10-26 贵州航天电器股份有限公司 一种小型化大负载的固态继电器

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2967520D1 (en) * 1979-12-28 1985-10-31 Int Rectifier Corp Field effect transistor circuit configuration
JPS6046575B2 (ja) * 1980-06-12 1985-10-16 松下電工株式会社 出力ハイブリツド型ソリツド・ステ−ト・リレ−
US4680490A (en) * 1985-04-02 1987-07-14 Gould Inc. MOSFET AC switch
JPS6212167A (ja) 1985-07-10 1987-01-21 Tdk Corp 溝部を有する縦形半導体装置の製造方法
JP2522249B2 (ja) 1986-06-21 1996-08-07 日本電気株式会社 ソリッドステ−トリレ−
DE3630775A1 (de) * 1986-09-10 1988-03-24 Frank Behlke Mosfet-hochspannungsschalter mit extrem kurzer schaltzeit
US4859875A (en) * 1987-08-28 1989-08-22 Siemens Aktiengesellschaft Optocoupler for power FET
SE460448B (sv) * 1988-02-29 1989-10-09 Asea Brown Boveri Dubbelriktad mos-switch
JPH0748559B2 (ja) * 1988-11-30 1995-05-24 シャープ株式会社 半導体装置
JPH0346410A (ja) * 1989-07-13 1991-02-27 Nec Corp 半導体リレー回路
JPH03129920A (ja) 1989-10-14 1991-06-03 Fuji Electric Co Ltd 光駆動半導体装置
JPH0420010A (ja) 1990-05-14 1992-01-23 Matsushita Electric Works Ltd 光結合型リレー回路
US5214275A (en) * 1991-09-30 1993-05-25 The Boeing Company Optically controlled microwave switch and signal switching system
JPH05268042A (ja) * 1992-03-18 1993-10-15 Nec Corp ソリッドステートリレー
JP3068985B2 (ja) * 1993-07-29 2000-07-24 株式会社東芝 半導体リレー
RU2120169C1 (ru) * 1993-09-08 1998-10-10 Сименс АГ Устройство установки переменного тока

Also Published As

Publication number Publication date
JPH11122087A (ja) 1999-04-30
US6172552B1 (en) 2001-01-09
EP0910169B1 (de) 2003-06-18
EP0910169A2 (de) 1999-04-21
DE69815624T2 (de) 2004-04-29
EP0910169A3 (de) 2000-12-06
JP3013894B2 (ja) 2000-02-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP

8339 Ceased/non-payment of the annual fee