DE69803283T2 - Verfahren zur herstellung von siliziumkarbidkristall mit geringem widerstand - Google Patents

Verfahren zur herstellung von siliziumkarbidkristall mit geringem widerstand

Info

Publication number
DE69803283T2
DE69803283T2 DE69803283T DE69803283T DE69803283T2 DE 69803283 T2 DE69803283 T2 DE 69803283T2 DE 69803283 T DE69803283 T DE 69803283T DE 69803283 T DE69803283 T DE 69803283T DE 69803283 T2 DE69803283 T2 DE 69803283T2
Authority
DE
Germany
Prior art keywords
nitrogen
pressure
silicon carbide
furnace
low resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69803283T
Other languages
English (en)
Other versions
DE69803283D1 (de
Inventor
L Barrett
H Hopkins
P Mchugh
Mcdonald Hobgood
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Northrop Grumman Corp
Original Assignee
Northrop Grumman Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Northrop Grumman Corp filed Critical Northrop Grumman Corp
Publication of DE69803283D1 publication Critical patent/DE69803283D1/de
Application granted granted Critical
Publication of DE69803283T2 publication Critical patent/DE69803283T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
DE69803283T 1997-05-08 1998-05-08 Verfahren zur herstellung von siliziumkarbidkristall mit geringem widerstand Expired - Fee Related DE69803283T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/852,972 US5937317A (en) 1997-05-08 1997-05-08 Method of making a low resistivity silicon carbide boule
PCT/US1998/009386 WO1998050605A1 (en) 1997-05-08 1998-05-08 Method of making a low resistivity silicon carbide boule

Publications (2)

Publication Number Publication Date
DE69803283D1 DE69803283D1 (de) 2002-02-21
DE69803283T2 true DE69803283T2 (de) 2002-07-18

Family

ID=25314688

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69803283T Expired - Fee Related DE69803283T2 (de) 1997-05-08 1998-05-08 Verfahren zur herstellung von siliziumkarbidkristall mit geringem widerstand

Country Status (5)

Country Link
US (1) US5937317A (de)
EP (1) EP0979319B1 (de)
AT (1) ATE209265T1 (de)
DE (1) DE69803283T2 (de)
WO (1) WO1998050605A1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6514338B2 (en) * 1999-12-27 2003-02-04 Showa Denko Kabushiki Kaisha Method and apparatus for producing silicon carbide single crystal
US6507046B2 (en) * 2001-05-11 2003-01-14 Cree, Inc. High-resistivity silicon carbide substrate for semiconductor devices with high break down voltage
US7563321B2 (en) * 2004-12-08 2009-07-21 Cree, Inc. Process for producing high quality large size silicon carbide crystals
WO2007038710A2 (en) * 2005-09-28 2007-04-05 Ii-Vi Incorporated Intra-cavity gettering of nitrogen in sic crystal growth
EP2069557A2 (de) * 2006-09-27 2009-06-17 II-VI Incorporated Durch ein schrittweises und periodisches perturbationsverfahren gezüchtete sic-einzelkristalle mit reduzierter versetzungsdichte

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL87348C (de) * 1954-03-19 1900-01-01
US4866005A (en) * 1987-10-26 1989-09-12 North Carolina State University Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
JPH05178698A (ja) * 1991-12-27 1993-07-20 Sharp Corp 炭化珪素バルク単結晶の製造装置及び製造方法
US5433167A (en) * 1992-02-04 1995-07-18 Sharp Kabushiki Kaisha Method of producing silicon-carbide single crystals by sublimation recrystallization process using a seed crystal
JP2795574B2 (ja) * 1992-02-04 1998-09-10 シャープ株式会社 炭化珪素体の製造方法
JP3128179B2 (ja) * 1992-11-24 2001-01-29 シャープ株式会社 ｎ型炭化珪素単結晶の製造方法
JPH0977594A (ja) * 1995-09-11 1997-03-25 Nippon Steel Corp 低抵抗単結晶炭化珪素の製造方法

Also Published As

Publication number Publication date
EP0979319A1 (de) 2000-02-16
US5937317A (en) 1999-08-10
DE69803283D1 (de) 2002-02-21
ATE209265T1 (de) 2001-12-15
WO1998050605A1 (en) 1998-11-12
EP0979319B1 (de) 2001-11-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee