DE69738043D1 - Photoelektrisches Umwandlungsbauelement mit Signalkorrektursystem - Google Patents

Photoelektrisches Umwandlungsbauelement mit Signalkorrektursystem

Info

Publication number
DE69738043D1
DE69738043D1 DE69738043T DE69738043T DE69738043D1 DE 69738043 D1 DE69738043 D1 DE 69738043D1 DE 69738043 T DE69738043 T DE 69738043T DE 69738043 T DE69738043 T DE 69738043T DE 69738043 D1 DE69738043 D1 DE 69738043D1
Authority
DE
Germany
Prior art keywords
photoelectric conversion
conversion device
correction system
signal correction
signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69738043T
Other languages
English (en)
Other versions
DE69738043T2 (de
Inventor
Isao Kobayashi
Noriyuki Kaifu
Toshiaki Sato
Satoshi Itabashi
Tadao Endo
Toshio Kameshima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE69738043D1 publication Critical patent/DE69738043D1/de
Application granted granted Critical
Publication of DE69738043T2 publication Critical patent/DE69738043T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14665—Imagers using a photoconductor layer
    • H01L27/14676—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14623—Optical shielding

Landscapes

  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
DE69738043T 1996-10-24 1997-10-23 Photoelektrisches Umwandlungsbauelement mit Signalkorrektursystem Expired - Lifetime DE69738043T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP28234296 1996-10-24
JP28234296 1996-10-24
JP26964897 1997-10-02
JP26964897A JP4100739B2 (ja) 1996-10-24 1997-10-02 光電変換装置

Publications (2)

Publication Number Publication Date
DE69738043D1 true DE69738043D1 (de) 2007-10-04
DE69738043T2 DE69738043T2 (de) 2008-05-15

Family

ID=26548863

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69738043T Expired - Lifetime DE69738043T2 (de) 1996-10-24 1997-10-23 Photoelektrisches Umwandlungsbauelement mit Signalkorrektursystem

Country Status (4)

Country Link
US (1) US6034406A (de)
EP (1) EP0838859B1 (de)
JP (1) JP4100739B2 (de)
DE (1) DE69738043T2 (de)

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JP3805100B2 (ja) * 1997-04-10 2006-08-02 キヤノン株式会社 光電変換装置
JP3636579B2 (ja) * 1997-11-04 2005-04-06 キヤノン株式会社 光電変換装置、光電変換装置の駆動方法及びその光電変換装置を有するシステム
JPH11307756A (ja) * 1998-02-20 1999-11-05 Canon Inc 光電変換装置および放射線読取装置
JP4632383B2 (ja) * 1998-08-31 2011-02-16 キヤノン株式会社 光電変換装置に用いられる半導体装置
US6407418B1 (en) * 1998-09-16 2002-06-18 Nec Corporation Semiconductor device, method of manufacturing the same, image sensor apparatus having the same and image reader having the same
US6453008B1 (en) * 1999-07-29 2002-09-17 Kabushiki Kaisha Toshiba Radiation detector noise reduction method and radiation detector
JP4181703B2 (ja) * 1999-09-02 2008-11-19 キヤノン株式会社 光電変換装置
DE19945023C2 (de) * 1999-09-20 2003-04-24 Siemens Ag Flächenhafter Bilddetektor für elektromagnetische Strahlen, insbesondere Röntgenstrahlen
JP2002022842A (ja) * 2000-07-07 2002-01-23 Canon Inc Ｘ線画像検出器
JP5016746B2 (ja) * 2000-07-28 2012-09-05 キヤノン株式会社 撮像装置及びその駆動方法
JP3984808B2 (ja) 2000-09-07 2007-10-03 キヤノン株式会社 信号処理装置及びそれを用いた撮像装置並びに放射線撮像システム
US6618604B2 (en) * 2000-12-28 2003-09-09 Ge Medical Systems Global Technology Company, Llc. Method and apparatus for correcting the offset induced by field effect transistor photo-conductive effects in a solid state x-ray detector
GB2370960A (en) * 2001-01-05 2002-07-10 Spectral Fusion Technologies L Partially shielded photodiode array
US6960753B2 (en) * 2001-01-24 2005-11-01 Hewlett-Packard Development Company, L.P. Photosensor arrays with encoded permanent information
JP4208491B2 (ja) * 2002-06-11 2009-01-14 キヤノン株式会社 撮像装置及び指紋認識装置
KR100537704B1 (ko) * 2002-07-12 2005-12-20 도시바 마쯔시따 디스플레이 테크놀로지 컴퍼니, 리미티드 표시 장치
KR100956338B1 (ko) * 2002-12-11 2010-05-06 삼성전자주식회사 Ｘ-ｒａｙ 검출기용 박막 트랜지스터 어레이 기판
US20040217258A1 (en) * 2003-04-30 2004-11-04 Clugston P. Edward Solar sensor including reflective element to transform the angular response
WO2006018804A1 (en) * 2004-08-20 2006-02-23 Philips Intellectual Property & Standards Gmbh Microelectronic system with a passivation layer
EP1997144A2 (de) * 2006-03-15 2008-12-03 Koninklijke Philips Electronics N.V. Halbleiterbauelement zur strahlungserkennung
DE102006021046B4 (de) * 2006-05-05 2013-06-06 Siemens Aktiengesellschaft Röntgendetektor
JP5280671B2 (ja) * 2006-12-20 2013-09-04 富士フイルム株式会社 画像検出器および放射線検出システム
WO2009114620A2 (en) * 2008-03-11 2009-09-17 Lightwave Power, Inc. Integrated planar device for light guiding, concentrating, and wavelength shifting
US8384559B2 (en) 2010-04-13 2013-02-26 Silicon Laboratories Inc. Sensor device with flexible interface and updatable information store
US8384041B2 (en) 2010-07-21 2013-02-26 Carestream Health, Inc. Digital radiographic imaging arrays with reduced noise
JP5988291B2 (ja) * 2012-06-13 2016-09-07 ソニーセミコンダクタソリューションズ株式会社 撮像装置および撮像表示システム
JP6570315B2 (ja) * 2015-05-22 2019-09-04 キヤノン株式会社 放射線撮像装置及び放射線撮像システム
US10267928B2 (en) 2015-11-26 2019-04-23 Koninklijke Philips N.V. Dark current compensation
JP6808316B2 (ja) * 2015-12-04 2021-01-06 キヤノン株式会社 撮像装置、および、撮像システム
JP6808317B2 (ja) * 2015-12-04 2021-01-06 キヤノン株式会社 撮像装置、および、撮像システム
JP2017220616A (ja) * 2016-06-09 2017-12-14 キヤノン株式会社 撮像装置および放射線撮像システム
WO2019084704A1 (en) * 2017-10-30 2019-05-09 Shenzhen Xpectvision Technology Co., Ltd. Dark noise compensation in radiation detector

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6240862A (ja) * 1985-08-19 1987-02-21 Canon Inc 電子表示記録装置
JPS62172866A (ja) * 1986-01-27 1987-07-29 Canon Inc 画像読取り装置
JPS62172859A (ja) * 1986-01-27 1987-07-29 Canon Inc 画像読取り装置
US4746793A (en) * 1986-09-10 1988-05-24 Hewlett-Packard Company Mask for spectrophotometer photodiode array having a bridge portion that substantially covers each photodiode
US4916304A (en) * 1986-10-07 1990-04-10 Canon Kabushiki Kaisha Image recording device having a conductive layer formed below a light receiving window
US4879470A (en) * 1987-01-16 1989-11-07 Canon Kabushiki Kaisha Photoelectric converting apparatus having carrier eliminating means
US4866291A (en) * 1987-06-30 1989-09-12 Canon Kabushiki Kaisha Photosensor with charge storage unit and switch unit formed on a single-crystal semiconductor film
JP2680002B2 (ja) * 1987-11-14 1997-11-19 キヤノン株式会社 光電変換装置
JP2554119B2 (ja) * 1988-02-26 1996-11-13 株式会社日立製作所 自動車空調用日射センサー
US5233442A (en) * 1989-06-07 1993-08-03 Canon Kabushiki Kaisha Photosensor and image reading device with improved correction means for signal correction and image reading method
JP2929550B2 (ja) * 1989-06-07 1999-08-03 キヤノン株式会社 光センサ及び画像読取装置
JP3131218B2 (ja) * 1989-12-06 2001-01-31 トランスウィッチ・コーポレーション 波形整形トランスバーサルフィルタ
JP2911519B2 (ja) * 1990-02-06 1999-06-23 キヤノン株式会社 光電変換装置
JPH0423470A (ja) * 1990-05-18 1992-01-27 Fuji Xerox Co Ltd イメージセンサ
JP2991354B2 (ja) * 1990-11-07 1999-12-20 キヤノン株式会社 画像読取装置およびそれを備えた画像情報処理装置
US5724152A (en) * 1993-01-01 1998-03-03 Canon Kabushiki Kaisha Image reading apparatus and image processing apparatus for reading optical information of visible and non-visible light
JP3066944B2 (ja) * 1993-12-27 2000-07-17 キヤノン株式会社 光電変換装置、その駆動方法及びそれを有するシステム
KR0136933B1 (ko) * 1994-05-21 1998-04-24 문정환 씨씨디(ccd) 영상소자 및 제조방법
US5736756A (en) * 1994-09-29 1998-04-07 Sony Corporation Solid-state image sensing device with lght shielding film
KR100192576B1 (ko) * 1995-11-17 1999-06-15 윤종용 콘택 이미지 센서

Also Published As

Publication number Publication date
EP0838859B1 (de) 2007-08-22
JP4100739B2 (ja) 2008-06-11
EP0838859A2 (de) 1998-04-29
JPH10189932A (ja) 1998-07-21
EP0838859A3 (de) 1999-04-14
DE69738043T2 (de) 2008-05-15
US6034406A (en) 2000-03-07

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