GB2370960A - Partially shielded photodiode array - Google Patents

Partially shielded photodiode array Download PDF

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Publication number
GB2370960A
GB2370960A GB0100227A GB0100227A GB2370960A GB 2370960 A GB2370960 A GB 2370960A GB 0100227 A GB0100227 A GB 0100227A GB 0100227 A GB0100227 A GB 0100227A GB 2370960 A GB2370960 A GB 2370960A
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United Kingdom
Prior art keywords
array
photodiode
photodiodes
output
incident
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB0100227A
Other versions
GB0100227D0 (en
Inventor
Mark Graves
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SPECTRAL FUSION TECHNOLOGIES L
Original Assignee
SPECTRAL FUSION TECHNOLOGIES L
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Publication date
Application filed by SPECTRAL FUSION TECHNOLOGIES L filed Critical SPECTRAL FUSION TECHNOLOGIES L
Priority to GB0100227A priority Critical patent/GB2370960A/en
Publication of GB0100227D0 publication Critical patent/GB0100227D0/en
Publication of GB2370960A publication Critical patent/GB2370960A/en
Withdrawn legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0216Coatings
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01TMEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16Measuring radiation intensity
    • G01T1/20Measuring radiation intensity with scintillation detectors
    • G01T1/2018Scintillation-photodiode combinations
    • G01T1/20188Auxiliary details, e.g. casings or cooling
    • G01T1/2019Shielding against direct hits
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01TMEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16Measuring radiation intensity
    • G01T1/24Measuring radiation intensity with semiconductor detectors
    • G01T1/247Detector read-out circuitry
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01TMEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T7/00Details of radiation-measuring instruments
    • G01T7/005Details of radiation-measuring instruments calibration techniques
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/1462Coatings
    • H01L27/14623Optical shielding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/115Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14643Photodiode arrays; MOS imagers
    • H01L27/14658X-ray, gamma-ray or corpuscular radiation imagers

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Measurement Of Radiation (AREA)

Abstract

An array of photodiodes is provided, at least one of which is shielded from incident signals such as by a lead cover, for x-ray sensing. In a linear array, this photodiode is preferably at the end of the array as it can then be ignored for the purpose of creating an image. In this way, the shielded photodiode always gives a dark output and can be used to provide a running calibration for the remaining photodiodes. Thus, the output of the one photodiode is subtracted from the output of other photodiodes in the array. If the temperature rises (for example) then the signal of all photodiodes will increase but the signal after subtraction will remain the same.

Description

PHOTODIODE ARRAY The present invention relates to a photodiode array. It addresses the difficulty commonly encountered with such arrays that the individual elements are typically sensitive to variations in temperature. In addition, when used for x-ray scanning (usually in combination with a scintillating material), x-rays which reach the photodiode tend to cause damage to the semiconducting structure which accumulates over time.
The use of a linear strip of photodiodes covered with a scintillating layer is widespread in real-time linear x-ray acquisition systems such as those used in bone densitrometry, CT scanning and baggage scanning. A more reliable system would therefore be of wide benefit.
The problem of thermal drift of the photodiodes is usually dealt with by seeking to maintain accurate thermal control over the environment in which the photodioides are placed. This usually involves using an air conditioning device operating under closed-loop control. As the environmental conditions change, the flow of fluid to a cooling device is regulated thereby maintaining a constant temperature at the array.
The cooling device includes a fan which blows air through a coiled conduit containing the fluid and over the array. This is however problematic in that the cost of an air conditioning unit is significant, and photodiodes closest to the fan are significantly cooler than those which are more distant. A temperature gradient therefore exists over the array.
Another approach to this problem is to make an"offset"correction to the output of the photodiodes. A reading is made of the array in the absence of any incident xray signal. The output will therefore represent the dark current, which is temperature dependent. This can be stored for later reference. As the array is used, the stored dark output can be subtracted. This works provided the temperature does not change between calibration and use. The unit must therefore be at its operating temperature before calibration. In practice, a long warm-up period must be observed and frequent re-calibrations must be made.
According to the present invention, an array of photodiodes is provided, at least one of which is shielded from incident signals.
Where the incident signal is x-radiation, the shielding can be by way of a lead cover. An appropriate opaque material can be used for other incident signals.
In a linear array, the at least one photodiode is preferably at the end of the array as it can then be ignored for the purpose of creating an image.
In this way, the shielded photodiode always gives a dark output and can be used to provide a running calibration for the remaining photodiodes. Thus, the output of the one photodiode is subtracted from the output of other photodiodes in the array. If the temperature rises (for example) then the signal of all photodiodes will increase but the signal after subtraction will remain the same.
Embodiments of the present invention will now be described by way of example, with reference to the accompanying figures, in which; Figure 1 is a vertical section through an array of photodiodes according to a first embodiment of the invention; Figure 2 is a schematic view of the drive electronics for the array of figure 1; Figure 3 is a schematic view of the signal handling electronics for the array of figure 1; Figure 4 shows an alternative signal handling electronics; Figure 5 shows a plan view of an array of photodiodes according to a second embodiment of the invention; and Figure 6 shows a vertical section of figure 5 on VI-VI.
Referring to figure 1, a detector for an x-ray image consists of a linear array of photodiodes 10. Each is covered with a layer of scintillating material 12 and a filter 14. Incident x-rays are thus filtered to remove those of the wrong wavelength and strike the scintillator 12. This generates a burst of photons which travel to the photodiode 10. Under suitable electrical bias, the output current of the photodiode can be related to the intensity of light detected and hence to the intensity of incident x rays. Each photodiode therefore acts as a single pixel in a image which is a single pixel wide.
The object being scanned is typically translated past the array at a set speed.
The array is sampled at intervals, and a two-dimensional image can be built up from the plurality of one-pixel wide images.
According to the invention, an outermost pixel 1 Oa is shielded from incident xrays by a lead foil 16. The lead foil should be sufficiently thick to reduce the x-rays incident on the scintillating layer to substantially zero. Thus, this photodiode will give a dark reading. As it is on the edge of the linear array, its output can be ignored in preparing the two-dimensional image, and used only to calibrate the other pixels.
As shown, the photodiode has a filter 14 and a scintillating layer 12, although these will not be strictly necessary as the lead foil 16 removes substantially all the incident x-rays. However, it may be simpler to manufacture the array with these in place.
Figure 2 shows the bias circuitry for the array of figure 1. Each of the photodiodes 10 is reverse biassed by a supply voltage Vb, as which is smoothed by the RC network formed by As and Cd-Incident light from the scintillators or thermal effects cause the generation of charge carriers in the photodiodes and allows a current to flow under reverse bias.
The output current of each photodiode is converted to a voltage as shown in respect of the edge photodiode 1 osa. An operational amplifier 18 is supplied with the output current of the photodiode 10a and provided with negative feedback via a resistor Re. In the style of a simple inverting amplifier, therefore, the output voltage Vout of the op-amp 18 is proportional to the output current of the photodiode 1 osa.
This output voltage is then fed to a voltage shift and amplification circuit shown in figure 3. This is of known design and results in a modified output voltage mod suitable for further processing. The modified voltage is then converted to a digital signal by an analogue-digital converter and placed in a computer memory.
Once a complete set of data has been read into the memory, the value derived from the reference pixel can be subtracted from the value of each other pixel to give an output corrected for temperature variations.
At each scan, a fresh calibration signal is taken from the reference pixel and therefore the temperature correction is always up to date. The warm-up period can be minimised, and downtime due to re-calibration is eliminated.
Figure 4 shows an alternative calibration circuit using analog hardware. The current output of each photodiode is converted to an analog voltage signal by converters 20 which correspond to those of figure 2. A shift/amplification circuit 22
is then provided for each photodiode 10 other than the reference photodiode 1 osa. The circuit corresponds to that of figure 3 but uses the output voltage from the reference photodiode 10a as its reference voltage. Thus, instead of subtracting a steady voltage, the potentially varying voltage of the reference photodiode is subtracted to automatically eliminate the dark signal of each photodiode 10. The corrected output Vcorr is then used for further processing, including A-D conversion and assembly into a two dimensional image, as before.
Figures 5 and 6 show an alternative array, from above. Each pixel 24 has a photodiode 26, scintillator 28 and filter 30 as per the pixels 10 of figure 1. Adjacent each such pixel 24 is a reference pixel 32 which is as per the reference pixel 1 osa of figure 1, and thus has a photodiode 34, scintillator 36 and filter 38, over which is provided a lead foil 40 which is sufficiently thick to reduce the incident x-ray intensity to substantially zero. The reference pixel 32 thus acts as a reference for pixel 24 only. Each pixel has a reference of its own. Any thermal gradient over the array will be accounted for automatically.
The output of the array shown in figures 5 and 6 can be handled as described above in relation to figure 1. It is likely that the hardware correction shown in figure 4 will be preferred as the use of a reference value per pixel will impose a higher processing load than a single value. However, this is not essential.
It will be appreciated by those skilled in the art that many variations may be made to the above-described embodiments without departing from the scope of the present invention.

Claims (6)

  1. CLAIMS 1. An array of photodiodes for sensing incident radiation, at least one of which is shielded from incident signals.
  2. 2. An array of photodiodes for sensing incident x-radiation, at least one of which is shielded from incident signals, at least the remainder being covered by a layer of scintillating material.
  3. 3. An array according to claim 2 in which the at least one photodiode is shielded by a lead cover.
  4. 4. An array according to any preceding claim in which the at least one photodiode is at the end of the array.
  5. 5. An array according to any preceding claim in combination with processing electronics adapted to subtract the output of the at least one photodiode from the output of other photodiodes in the array.
  6. 6. An array of photodiodes substantially as described herein with reference to and/or as illustrated in the accompanying figures.
GB0100227A 2001-01-05 2001-01-05 Partially shielded photodiode array Withdrawn GB2370960A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB0100227A GB2370960A (en) 2001-01-05 2001-01-05 Partially shielded photodiode array

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0100227A GB2370960A (en) 2001-01-05 2001-01-05 Partially shielded photodiode array

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GB0100227D0 GB0100227D0 (en) 2001-02-14
GB2370960A true GB2370960A (en) 2002-07-10

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7816652B2 (en) 2006-05-05 2010-10-19 Siemens Aktiengesellschaft X-ray detector
WO2017089363A1 (en) * 2015-11-26 2017-06-01 Koninklijke Philips N.V. Dark current compensation
CN108447941A (en) * 2017-02-16 2018-08-24 群创光电股份有限公司 The pixel circuit and X-ray detector of X-ray detector

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0605259A2 (en) * 1993-01-01 1994-07-06 Canon Kabushiki Kaisha Image reading apparatus and image processing apparatus
EP0838859A2 (en) * 1996-10-24 1998-04-29 Canon Kabushiki Kaisha Photoelectric conversion apparatus with signal correction capability

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0605259A2 (en) * 1993-01-01 1994-07-06 Canon Kabushiki Kaisha Image reading apparatus and image processing apparatus
EP0838859A2 (en) * 1996-10-24 1998-04-29 Canon Kabushiki Kaisha Photoelectric conversion apparatus with signal correction capability

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7816652B2 (en) 2006-05-05 2010-10-19 Siemens Aktiengesellschaft X-ray detector
DE102006021046B4 (en) * 2006-05-05 2013-06-06 Siemens Aktiengesellschaft X-ray detector
WO2017089363A1 (en) * 2015-11-26 2017-06-01 Koninklijke Philips N.V. Dark current compensation
CN108291973A (en) * 2015-11-26 2018-07-17 皇家飞利浦有限公司 Dark current compensation
US10267928B2 (en) 2015-11-26 2019-04-23 Koninklijke Philips N.V. Dark current compensation
CN108447941A (en) * 2017-02-16 2018-08-24 群创光电股份有限公司 The pixel circuit and X-ray detector of X-ray detector
CN108447941B (en) * 2017-02-16 2019-10-18 群创光电股份有限公司 The pixel circuit and X-ray detector of X-ray detector

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