DE69734958D1 - Fluorierte ionische Sulfonylimide und Sulfonylmethylide, Verfahren zu deren Herstellung sowie deren Anwednung als Photoinitiatoren - Google Patents

Fluorierte ionische Sulfonylimide und Sulfonylmethylide, Verfahren zu deren Herstellung sowie deren Anwednung als Photoinitiatoren

Info

Publication number
DE69734958D1
DE69734958D1 DE69734958T DE69734958T DE69734958D1 DE 69734958 D1 DE69734958 D1 DE 69734958D1 DE 69734958 T DE69734958 T DE 69734958T DE 69734958 T DE69734958 T DE 69734958T DE 69734958 D1 DE69734958 D1 DE 69734958D1
Authority
DE
Germany
Prior art keywords
sulfonylmethylidene
sulfonylimides
photoinitiators
preparation
fluorinated ionic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69734958T
Other languages
English (en)
Other versions
DE69734958T2 (de
Inventor
Alain Vallee
Michel Armand
Xavier Ollivrin
Christophe Michot
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hydro Quebec
Centre National de la Recherche Scientifique CNRS
Original Assignee
Hydro Quebec
Centre National de la Recherche Scientifique CNRS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=4159016&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69734958(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Hydro Quebec, Centre National de la Recherche Scientifique CNRS filed Critical Hydro Quebec
Publication of DE69734958D1 publication Critical patent/DE69734958D1/de
Application granted granted Critical
Publication of DE69734958T2 publication Critical patent/DE69734958T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2/00—Processes of polymerisation
    • C08F2/46—Polymerisation initiated by wave energy or particle radiation
    • C08F2/48—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
    • C08F2/50—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light with sensitising agents
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C307/00—Amides of sulfuric acids, i.e. compounds having singly-bound oxygen atoms of sulfate groups replaced by nitrogen atoms, not being part of nitro or nitroso groups
    • C07C307/02—Monoamides of sulfuric acids or esters thereof, e.g. sulfamic acids
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
    • C07C309/78—Halides of sulfonic acids
    • C07C309/79—Halides of sulfonic acids having halosulfonyl groups bound to acyclic carbon atoms
    • C07C309/80—Halides of sulfonic acids having halosulfonyl groups bound to acyclic carbon atoms of a saturated carbon skeleton
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C311/00—Amides of sulfonic acids, i.e. compounds having singly-bound oxygen atoms of sulfo groups replaced by nitrogen atoms, not being part of nitro or nitroso groups
    • C07C311/48—Amides of sulfonic acids, i.e. compounds having singly-bound oxygen atoms of sulfo groups replaced by nitrogen atoms, not being part of nitro or nitroso groups having nitrogen atoms of sulfonamide groups further bound to another hetero atom
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C381/00—Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
    • C07C381/12—Sulfonium compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F8/00—Chemical modification by after-treatment
    • C08F8/44—Preparation of metal salts or ammonium salts
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/38—Polysiloxanes modified by chemical after-treatment
    • C08G77/382—Polysiloxanes modified by chemical after-treatment containing atoms other than carbon, hydrogen, oxygen or silicon
    • C08G77/392—Polysiloxanes modified by chemical after-treatment containing atoms other than carbon, hydrogen, oxygen or silicon containing sulfur
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/38—Polysiloxanes modified by chemical after-treatment
    • C08G77/382—Polysiloxanes modified by chemical after-treatment containing atoms other than carbon, hydrogen, oxygen or silicon
    • C08G77/398—Polysiloxanes modified by chemical after-treatment containing atoms other than carbon, hydrogen, oxygen or silicon containing boron or metal atoms
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/029—Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
DE69734958T 1996-10-03 1997-10-02 Fluorierte ionische Sulfonylimide und Sulfonylmethylide, Verfahren zu deren Herstellung sowie deren Anwendung als Photoinitiatoren Expired - Lifetime DE69734958T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CA002187046A CA2187046A1 (fr) 1996-10-03 1996-10-03 Sulfonylimidures et sulfonylmethylures, leur utilisation comme photoinitiateur
CA2187046 1996-10-03

Publications (2)

Publication Number Publication Date
DE69734958D1 true DE69734958D1 (de) 2006-02-02
DE69734958T2 DE69734958T2 (de) 2006-08-10

Family

ID=4159016

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69734958T Expired - Lifetime DE69734958T2 (de) 1996-10-03 1997-10-02 Fluorierte ionische Sulfonylimide und Sulfonylmethylide, Verfahren zu deren Herstellung sowie deren Anwendung als Photoinitiatoren
DE69734959T Expired - Lifetime DE69734959T2 (de) 1996-10-03 1997-10-02 Polymerische polyionische Verbindungen, Verfahren zu deren Herstellung sowie deren Anwendung als Photoinitiatoren

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE69734959T Expired - Lifetime DE69734959T2 (de) 1996-10-03 1997-10-02 Polymerische polyionische Verbindungen, Verfahren zu deren Herstellung sowie deren Anwendung als Photoinitiatoren

Country Status (5)

Country Link
US (2) US6008265A (de)
EP (2) EP0834502B1 (de)
JP (2) JP4226672B2 (de)
CA (1) CA2187046A1 (de)
DE (2) DE69734958T2 (de)

Families Citing this family (67)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2187046A1 (fr) * 1996-10-03 1998-04-03 Alain Vallee Sulfonylimidures et sulfonylmethylures, leur utilisation comme photoinitiateur
JP4939679B2 (ja) 1997-07-25 2012-05-30 アセップ・インク 非局在化アニオン電荷を有するイオン化合物、及びそれらのイオン伝導性成分又は触媒としての使用
JP4204113B2 (ja) * 1997-12-04 2009-01-07 株式会社Ａｄｅｋａ 新規な芳香族スルホニウム化合物、これからなる光酸発生剤およびこれを含む光重合性組成物、光造形用樹脂組成物ならびに光学的立体造形法
JP2000119306A (ja) * 1998-03-20 2000-04-25 Nippon Soda Co Ltd ヨ―ドニウム塩化合物を含有する光硬化性組成物
US6031014A (en) * 1998-12-08 2000-02-29 Crivello; James V. Initiator compositions and methods for their synthesis and use
CA2402113A1 (en) * 2000-03-09 2001-09-13 Jonathan D. Zook Chemically resistant polythioethers and formation thereof
US20020082357A1 (en) * 2000-10-06 2002-06-27 Corcoran Robert C. Resin and its use in converting morphine to codeine
ATE394707T1 (de) * 2000-12-04 2008-05-15 Ciba Holding Inc Oniumsalze und ihre verwendung als latente säuren
JP4102032B2 (ja) * 2001-03-12 2008-06-18 富士フイルム株式会社 ポジ型レジスト組成物
CN1328254C (zh) * 2001-03-12 2007-07-25 贝尔法斯特皇后大学 金属二(三氟甲磺酰)亚胺化合物和金属二(三氟甲磺酰)亚胺化合物的合成方法
JP4067284B2 (ja) * 2001-03-12 2008-03-26 富士フイルム株式会社 ポジ型レジスト組成物
JP3969077B2 (ja) * 2001-04-04 2007-08-29 住友化学株式会社 高分子電解質及びその製造方法
US6545109B2 (en) 2001-06-29 2003-04-08 3M Innovative Properties Company Imide salts as emulsifiers for the polymerization of fluoroolefins
US6895156B2 (en) 2001-10-09 2005-05-17 3M Innovative Properties Company Small diameter, high strength optical fiber
JP4193478B2 (ja) * 2001-12-03 2008-12-10 住友化学株式会社 スルホニウム塩及びその用途
US6818379B2 (en) * 2001-12-03 2004-11-16 Sumitomo Chemical Company, Limited Sulfonium salt and use thereof
JP2003215791A (ja) * 2002-01-18 2003-07-30 Central Glass Co Ltd 超強酸オニウム塩化合物および感放射線性樹脂組成物
KR101003022B1 (ko) * 2002-06-26 2010-12-22 아치 스페셜티 케미칼즈, 인코포레이티드 광감응성 조성물
JP4328570B2 (ja) * 2002-06-28 2009-09-09 富士フイルム株式会社 レジスト組成物及びそれを用いたパターン形成方法
JP2004085657A (ja) * 2002-08-23 2004-03-18 Toray Ind Inc ポジ型感放射線性組成物およびこれを用いたレジストパターンの製造方法
US7285363B2 (en) * 2002-11-08 2007-10-23 The University Of Connecticut Photoactivators, methods of use, and the articles derived therefrom
JP4772288B2 (ja) * 2003-06-05 2011-09-14 東京応化工業株式会社 ホトレジスト組成物用樹脂、ホトレジスト組成物、およびレジストパターン形成方法
JP4188265B2 (ja) * 2003-10-23 2008-11-26 東京応化工業株式会社 レジスト組成物およびレジストパターン形成方法
US7230122B2 (en) * 2003-11-04 2007-06-12 National Starch And Chemical Investment Holding Corporation Sulfonium salt photinitiators and use thereof
US20050287441A1 (en) * 2004-06-23 2005-12-29 Stefano Passerini Lithium polymer electrolyte batteries and methods of making
JP4362093B2 (ja) * 2004-08-06 2009-11-11 大日本印刷株式会社 帯電防止膜形成用の電離放射線硬化性組成物と帯電防止膜および帯電防止膜を備えた構造体
JP4484681B2 (ja) * 2004-12-03 2010-06-16 富士フイルム株式会社 感光性組成物及び該感光性組成物を用いたパターン形成方法
JP4740631B2 (ja) * 2005-04-18 2011-08-03 日本カーリット株式会社 ジイモニウム塩化合物並びにこれを利用する近赤外線吸収色素および近赤外線遮断フィルター
JP4580841B2 (ja) 2005-08-16 2010-11-17 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP2009504790A (ja) * 2005-08-22 2009-02-05 トランスファート プラス エスイーシー スルホニルイミド及びその誘導体を調製するための方法
JP2007148208A (ja) * 2005-11-30 2007-06-14 Sumitomo Chemical Co Ltd 感放射線性樹脂組成物
ES2530792T3 (es) * 2006-05-17 2015-03-05 American Dye Source Inc Nuevos materiales para recubrimientos de planchas litográficas, planchas litográficas y recubrimientos que contienen los mismos, métodos de preparación y uso
JP5168860B2 (ja) 2006-09-14 2013-03-27 株式会社スリーボンド 光重合性組成物
JP4564977B2 (ja) * 2007-04-05 2010-10-20 東京応化工業株式会社 感光性樹脂組成物、レジストパターンの製造方法、積層体、及びデバイス
JP5178273B2 (ja) * 2008-03-26 2013-04-10 本田技研工業株式会社 アクチュエータ
JP5206476B2 (ja) * 2009-02-19 2013-06-12 Ｊｓｒ株式会社 ネガ型感放射線性組成物、硬化パターン形成方法及び硬化パターン
CN102859740B (zh) * 2010-04-22 2016-06-15 日立化成株式会社 有机电子材料、聚合引发剂及热聚合引发剂、油墨组合物、有机薄膜及其制造方法、有机电子元件、有机电致发光元件、照明装置、显示元件以及显示装置
JP5618625B2 (ja) * 2010-05-25 2014-11-05 富士フイルム株式会社 パターン形成方法及び感活性光線性又は感放射線性樹脂組成物
KR20140007854A (ko) * 2011-02-23 2014-01-20 제이에스알 가부시끼가이샤 네가티브형 패턴 형성 방법 및 포토레지스트 조성물
KR101339772B1 (ko) * 2011-02-28 2014-02-05 한국과학기술원 광경화 투명 수지 조성물
JP5741518B2 (ja) * 2012-04-24 2015-07-01 信越化学工業株式会社 レジスト下層膜材料及びパターン形成方法
JP5819810B2 (ja) * 2012-12-18 2015-11-24 信越化学工業株式会社 ネガ型レジスト材料及びこれを用いたパターン形成方法
US9017934B2 (en) 2013-03-08 2015-04-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist defect reduction system and method
US9110376B2 (en) 2013-03-12 2015-08-18 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9502231B2 (en) 2013-03-12 2016-11-22 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist layer and method
US8932799B2 (en) 2013-03-12 2015-01-13 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9543147B2 (en) 2013-03-12 2017-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of manufacture
US9256128B2 (en) 2013-03-12 2016-02-09 Taiwan Semiconductor Manufacturing Company, Ltd. Method for manufacturing semiconductor device
US9245751B2 (en) 2013-03-12 2016-01-26 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-reflective layer and method
US9175173B2 (en) 2013-03-12 2015-11-03 Taiwan Semiconductor Manufacturing Company, Ltd. Unlocking layer and method
US9354521B2 (en) 2013-03-12 2016-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9117881B2 (en) 2013-03-15 2015-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Conductive line system and process
US9341945B2 (en) 2013-08-22 2016-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of formation and use
US10036953B2 (en) 2013-11-08 2018-07-31 Taiwan Semiconductor Manufacturing Company Photoresist system and method
US10095113B2 (en) 2013-12-06 2018-10-09 Taiwan Semiconductor Manufacturing Company Photoresist and method
US9761449B2 (en) 2013-12-30 2017-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. Gap filling materials and methods
KR20150086050A (ko) * 2014-01-17 2015-07-27 동우 화인켐 주식회사 신규의 설포닐이미드 염화합물, 이의 제조 방법 및 이를 포함하는 광산 발생제 및 감광성 수지 조성물
JP6195552B2 (ja) * 2014-02-21 2017-09-13 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、レジスト膜、及び、パターン形成方法、並びに、これらを用いた電子デバイスの製造方法
US9599896B2 (en) 2014-03-14 2017-03-21 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9581908B2 (en) 2014-05-16 2017-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method
JP6658204B2 (ja) * 2015-04-28 2020-03-04 信越化学工業株式会社 光酸発生剤、レジスト組成物及びパターン形成方法
KR102648061B1 (ko) 2015-12-01 2024-03-18 제이에스알 가부시끼가이샤 감방사선성 조성물, 패턴 형성 방법 및 감방사선성 산 발생제
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JP7042598B2 (ja) 2016-12-14 2022-03-28 住友化学株式会社 樹脂、レジスト組成物及びレジストパターンの製造方法
CN108946686A (zh) * 2018-07-31 2018-12-07 九江天赐高新材料有限公司 一种双氟磺酰亚胺锂的制备方法
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CN117270320A (zh) * 2023-10-13 2023-12-22 上海艾深斯科技有限公司 一种MOFs光刻胶产品及其制备方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3632843A (en) * 1969-03-14 1972-01-04 Minnesota Mining & Mfg Bis(perfluoroalkylsulfonyl)methanes in cationic polymerization
US4049861A (en) * 1975-03-07 1977-09-20 Minnesota Mining And Manufacturing Company Abrasion resistant coatings
US4031036A (en) * 1975-06-09 1977-06-21 Minnesota Mining And Manufacturing Company Use of bis(fluoroaliphaticsulfonyl) imides in cationic polymerization
US4115295A (en) * 1976-04-26 1978-09-19 Minnesota Mining And Manufacturing Company Polymerizable compositions containing highly fluorinated aliphatic sulfonyl protonic acid catalyst
US4197174A (en) * 1979-03-14 1980-04-08 American Can Company Method for producing bis-[4-(diphenylsulfonio) phenyl] sulfide bis-MX6
DE3879278D1 (de) * 1987-06-05 1993-04-22 Ciba-Geigy Ag, Basel, Ch
US4780511A (en) * 1987-06-22 1988-10-25 General Electric Company Method for making polymeric photoactive aryl iodonium salts, products obtained therefrom, and use
US4920182A (en) * 1987-12-18 1990-04-24 Ciba-Geigy Corporation Epoxy resin compositions containing polyester flexibilizer and metallocene complex initiator
JPH03296755A (ja) * 1990-04-16 1991-12-27 Fuji Photo Film Co Ltd 画像形成方法
EP0536690B1 (de) * 1991-10-07 1998-09-09 Fuji Photo Film Co., Ltd. Lichtempfindliche Zusammensetzung
FR2688790B1 (fr) * 1992-03-23 1994-05-13 Rhone Poulenc Chimie Compositions a base de polyorganosiloxanes a groupements fonctionnels reticulables et leur utilisation pour la realisation de revetements anti-adhesifs.
US5534623A (en) * 1993-01-21 1996-07-09 Du Pont (Uk) Limited Process for preparing a polyunsaturated diazonium compounds
FR2724660B1 (fr) * 1994-09-16 1997-01-31 Rhone Poulenc Chimie Amorceurs de reticulation, par voie cationique, de polymeres a groupements organofonctionnels, compositions a base de polyorganosiloxanes reticulables et contenant ces amorceurs et application desdites compositions en antiadherence
US5527655A (en) * 1994-09-28 1996-06-18 Minnesota Mining And Manufacturing Company Radiation-sensitive adducts comprising diazonium cations, quaternary cations, and sulfonated polyester anions
US5554664A (en) * 1995-03-06 1996-09-10 Minnesota Mining And Manufacturing Company Energy-activatable salts with fluorocarbon anions
US5541235A (en) * 1995-03-06 1996-07-30 Minnesota Mining And Manufacturing Company Organic soluble cationic dyes with fluorinated alkylsulfonyl counterions
US5550171A (en) * 1995-05-31 1996-08-27 International Business Machines Corporation Polymeric sulfonium salt photoinitiators
CA2187046A1 (fr) * 1996-10-03 1998-04-03 Alain Vallee Sulfonylimidures et sulfonylmethylures, leur utilisation comme photoinitiateur

Also Published As

Publication number Publication date
EP0834492A3 (de) 2003-10-08
US6008265A (en) 1999-12-28
US6008267A (en) 1999-12-28
JP4226672B2 (ja) 2009-02-18
JPH10226658A (ja) 1998-08-25
EP0834502B1 (de) 2005-12-28
JPH10226707A (ja) 1998-08-25
EP0834502A2 (de) 1998-04-08
EP0834492B1 (de) 2005-12-28
JP3988963B2 (ja) 2007-10-10
EP0834502A3 (de) 2003-10-08
EP0834492A2 (de) 1998-04-08
CA2187046A1 (fr) 1998-04-03
DE69734959T2 (de) 2006-08-10
DE69734958T2 (de) 2006-08-10
DE69734959D1 (de) 2006-02-02

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