DE69731170D1 - Verbesserungen an oder in Bezug auf Halbleiteranordnungen - Google Patents
Verbesserungen an oder in Bezug auf HalbleiteranordnungenInfo
- Publication number
- DE69731170D1 DE69731170D1 DE1997631170 DE69731170T DE69731170D1 DE 69731170 D1 DE69731170 D1 DE 69731170D1 DE 1997631170 DE1997631170 DE 1997631170 DE 69731170 T DE69731170 T DE 69731170T DE 69731170 D1 DE69731170 D1 DE 69731170D1
- Authority
- DE
- Germany
- Prior art keywords
- relation
- semiconductor devices
- semiconductor
- devices
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
- H01L29/7885—Hot carrier injection from the channel
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US3284796P | 1996-12-13 | 1996-12-13 | |
US32847P | 1996-12-13 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69731170D1 true DE69731170D1 (de) | 2004-11-18 |
DE69731170T2 DE69731170T2 (de) | 2006-02-02 |
Family
ID=21867141
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69731170T Expired - Lifetime DE69731170T2 (de) | 1996-12-13 | 1997-12-12 | Verbesserungen an oder in Bezug auf Halbleiteranordnungen |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP0848384B1 (de) |
JP (1) | JP4229996B2 (de) |
KR (1) | KR19980064091A (de) |
DE (1) | DE69731170T2 (de) |
TW (1) | TW434843B (de) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5898633A (en) * | 1997-05-21 | 1999-04-27 | Motorola, Inc. | Circuit and method of limiting leakage current in a memory circuit |
JP4622902B2 (ja) | 2006-03-17 | 2011-02-02 | セイコーエプソン株式会社 | 不揮発性半導体記憶装置 |
KR100830589B1 (ko) | 2007-04-17 | 2008-05-22 | 삼성전자주식회사 | 워드 라인으로 음의 고전압을 전달할 수 있는 고전압스위치를 갖는 플래시 메모리 장치 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5243559A (en) * | 1990-12-12 | 1993-09-07 | Nippon Steel Corporation | Semiconductor memory device |
JP3152762B2 (ja) * | 1992-10-06 | 2001-04-03 | 富士通株式会社 | 不揮発性半導体記憶装置 |
JP3417630B2 (ja) * | 1993-12-17 | 2003-06-16 | 株式会社日立製作所 | 半導体集積回路装置とフラッシュメモリ及び不揮発性記憶装置 |
US5457652A (en) * | 1994-04-01 | 1995-10-10 | National Semiconductor Corporation | Low voltage EEPROM |
US5491657A (en) * | 1995-02-24 | 1996-02-13 | Advanced Micro Devices, Inc. | Method for bulk (or byte) charging and discharging an array of flash EEPROM memory cells |
-
1997
- 1997-12-12 DE DE69731170T patent/DE69731170T2/de not_active Expired - Lifetime
- 1997-12-12 EP EP97121895A patent/EP0848384B1/de not_active Expired - Lifetime
- 1997-12-12 KR KR1019970068212A patent/KR19980064091A/ko not_active Application Discontinuation
- 1997-12-15 JP JP34542997A patent/JP4229996B2/ja not_active Expired - Fee Related
-
1998
- 1998-03-23 TW TW086118729A patent/TW434843B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DE69731170T2 (de) | 2006-02-02 |
EP0848384B1 (de) | 2004-10-13 |
JPH10178115A (ja) | 1998-06-30 |
KR19980064091A (ko) | 1998-10-07 |
EP0848384A3 (de) | 1999-08-11 |
JP4229996B2 (ja) | 2009-02-25 |
TW434843B (en) | 2001-05-16 |
EP0848384A2 (de) | 1998-06-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69722542D1 (de) | Verbesserungen an oder in Bezug auf Halbleiteranordnungen | |
DE69531085D1 (de) | Verbesserungen in, an oder in Bezug auf Halbleiteranordnungen | |
DE69531571D1 (de) | Verbesserungen in Bezug auf Halbleitervorrichtungen | |
DE69734542D1 (de) | Verbesserungen an Halbleiter-Einrichtungen | |
ATE381353T1 (de) | Verbesserungen in oder an kontrastmitteln | |
DE69636589D1 (de) | Verbesserungen in oder in Beziehung auf integrierte Schaltungen | |
DE69739683D1 (de) | Verbesserungen in oder sich beziehend auf einer atm-vermittlungsstelle | |
ATE238072T1 (de) | Verbesserungen an (oder im bezug auf) kontrastmittel | |
NO984472L (no) | Forbedringer i eller vedr°rende innkapsling | |
DE69739460D1 (de) | Verbesserungen in oder sich beziehend auf einer atm-vermittlungsstelle | |
DE69526630D1 (de) | Verbesserungen in oder in Beziehung auf integrierte Schaltungen | |
DE69514305T2 (de) | Verbesserungen in oder bezüglich mikroelektrischen Anordnungen | |
DE69635236D1 (de) | Verbesserungen an Halbleiteranordnungen | |
DE69838866D1 (de) | Verbesserungen in oder mit Bezug auf Kryostatsystemen | |
DE69739652D1 (de) | Verbesserungen in oder sich beziehend auf einer atm-vermittlungsstelle | |
DE69717054T2 (de) | Verbesserungen an oder bezüglich integrierten Schaltungen | |
DE69724499D1 (de) | Verbesserungen für oder in Bezug auf Halbleiterspeicheranordnungen | |
DE69621107T2 (de) | Verbesserungen in oder in Bezug auf Halbleiterchiptrennung | |
DE69614866T2 (de) | Verbesserungen in oder in beziehung auf drehwiderstandvorrichtungen | |
DE69735980D1 (de) | Halbleiteranordnung in Halbleiter-Schaltungsstruktur | |
DE69321966T2 (de) | Leistungs-Halbleiterbauelement | |
DE69721376D1 (de) | Verbesserungen in oder in Bezug auf Halbleiteranordnungen | |
DE69429220D1 (de) | Leistungsberechnungsvorrichtung | |
DE69731170D1 (de) | Verbesserungen an oder in Bezug auf Halbleiteranordnungen | |
DE69531089D1 (de) | Verbesserungen an oder in Bezug auf halbleitende Anordnungen |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |