DE69729833D1 - Herstellung einer halbleiteranordnung mit einer epitaxialen halbleiterschicht - Google Patents

Herstellung einer halbleiteranordnung mit einer epitaxialen halbleiterschicht

Info

Publication number
DE69729833D1
DE69729833D1 DE69729833T DE69729833T DE69729833D1 DE 69729833 D1 DE69729833 D1 DE 69729833D1 DE 69729833 T DE69729833 T DE 69729833T DE 69729833 T DE69729833 T DE 69729833T DE 69729833 D1 DE69729833 D1 DE 69729833D1
Authority
DE
Germany
Prior art keywords
production
semiconductor device
semiconductor layer
epitaxial
epitaxial semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69729833T
Other languages
English (en)
Other versions
DE69729833T2 (de
Inventor
Ronald Dekker
Eustatius Timmering
Doede Terpstra
Boer Barteld De
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of DE69729833D1 publication Critical patent/DE69729833D1/de
Application granted granted Critical
Publication of DE69729833T2 publication Critical patent/DE69729833T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66272—Silicon vertical transistors
    • H01L29/66287—Silicon vertical transistors with a single crystalline emitter, collector or base including extrinsic, link or graft base formed on the silicon substrate, e.g. by epitaxy, recrystallisation, after insulating device isolation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/0245—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
DE69729833T 1996-03-29 1997-03-13 Herstellung einer halbleiteranordnung mit einer epitaxialen halbleiterschicht Expired - Fee Related DE69729833T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP96200861 1996-03-29
EP96200861 1996-03-29
PCT/IB1997/000248 WO1997037377A1 (en) 1996-03-29 1997-03-13 Manufacture of a semiconductor device with an epitaxial semiconductor zone

Publications (2)

Publication Number Publication Date
DE69729833D1 true DE69729833D1 (de) 2004-08-19
DE69729833T2 DE69729833T2 (de) 2005-07-07

Family

ID=8223831

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69729833T Expired - Fee Related DE69729833T2 (de) 1996-03-29 1997-03-13 Herstellung einer halbleiteranordnung mit einer epitaxialen halbleiterschicht

Country Status (5)

Country Link
US (1) US6368946B1 (de)
EP (1) EP0834189B1 (de)
JP (1) JP4150076B2 (de)
DE (1) DE69729833T2 (de)
WO (1) WO1997037377A1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10005442A1 (de) 2000-02-08 2001-08-16 Infineon Technologies Ag Bipolartransistor
US6444591B1 (en) * 2000-09-30 2002-09-03 Newport Fab, Llc Method for reducing contamination prior to epitaxial growth and related structure
US6696342B1 (en) * 2001-06-15 2004-02-24 National Semiconductor Corp. Small emitter and base-collector bi-polar transistor
DE60229400D1 (de) * 2001-08-06 2008-11-27 Nxp Bv Bipolartransistor, halbleiterbauelement und diesbezügliches herstellungsverfahren
WO2003025984A2 (en) 2001-09-21 2003-03-27 Amberwave Systems Corporation Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same
AU2002341803A1 (en) * 2001-09-24 2003-04-07 Amberwave Systems Corporation Rf circuits including transistors having strained material layers
DE10249897B4 (de) * 2002-10-25 2005-09-22 Austriamicrosystems Ag Selbstjustierendes Verfahren zur Herstellung eines Transistors
DE10317098A1 (de) * 2003-04-14 2004-07-22 Infineon Technologies Ag Verfahren zur Herstellung eines Bipolartransistors
KR100505113B1 (ko) * 2003-04-23 2005-07-29 삼성전자주식회사 모스 트랜지스터 및 그 제조방법
US7795605B2 (en) * 2007-06-29 2010-09-14 International Business Machines Corporation Phase change material based temperature sensor

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4041518A (en) * 1973-02-24 1977-08-09 Hitachi, Ltd. MIS semiconductor device and method of manufacturing the same
US5296391A (en) * 1982-03-24 1994-03-22 Nec Corporation Method of manufacturing a bipolar transistor having thin base region
JPS61166071A (ja) * 1985-01-17 1986-07-26 Toshiba Corp 半導体装置及びその製造方法
JPS61164262A (ja) * 1985-01-17 1986-07-24 Toshiba Corp 半導体装置
DE3825701A1 (de) * 1987-07-29 1989-02-09 Toshiba Kawasaki Kk Verfahren zur herstellung eines bipolaren transistors
KR890011103A (ko) * 1987-12-04 1989-08-12 미다 가쓰시게 반도체 집적회로장치의 제조방법
JP2728671B2 (ja) * 1988-02-03 1998-03-18 株式会社東芝 バイポーラトランジスタの製造方法
US5204276A (en) * 1988-12-06 1993-04-20 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device
JPH03206621A (ja) * 1990-01-09 1991-09-10 Oki Electric Ind Co Ltd 半導体集積回路装置の製造方法
DE59209978D1 (de) * 1991-09-23 2003-03-27 Infineon Technologies Ag Verfahren zur Herstellung eines MOS-Transistors
JP3156436B2 (ja) * 1993-04-05 2001-04-16 日本電気株式会社 ヘテロ接合バイポーラトランジスタ
BE1007670A3 (nl) * 1993-10-25 1995-09-12 Philips Electronics Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting waarbij een halfgeleiderzone wordt gevormd door diffusie vanuit een strook polykristallijn silicium.
JP2630237B2 (ja) * 1993-12-22 1997-07-16 日本電気株式会社 半導体装置及びその製造方法
JP2720793B2 (ja) * 1994-05-12 1998-03-04 日本電気株式会社 半導体装置の製造方法
US5620908A (en) * 1994-09-19 1997-04-15 Kabushiki Kaisha Toshiba Manufacturing method of semiconductor device comprising BiCMOS transistor
JP2629644B2 (ja) * 1995-03-22 1997-07-09 日本電気株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
DE69729833T2 (de) 2005-07-07
EP0834189B1 (de) 2004-07-14
WO1997037377A1 (en) 1997-10-09
EP0834189A1 (de) 1998-04-08
JPH11506569A (ja) 1999-06-08
JP4150076B2 (ja) 2008-09-17
US6368946B1 (en) 2002-04-09

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Legal Events

Date Code Title Description
8320 Willingness to grant licences declared (paragraph 23)
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: EISENFUEHR, SPEISER & PARTNER, 10178 BERLIN

8327 Change in the person/name/address of the patent owner

Owner name: NXP B.V., EINDHOVEN, NL

8339 Ceased/non-payment of the annual fee