DE69727967D1 - Verfahren zur herstellung eines aufgehängten elementes in einer mikromechanischen struktur - Google Patents
Verfahren zur herstellung eines aufgehängten elementes in einer mikromechanischen strukturInfo
- Publication number
- DE69727967D1 DE69727967D1 DE69727967T DE69727967T DE69727967D1 DE 69727967 D1 DE69727967 D1 DE 69727967D1 DE 69727967 T DE69727967 T DE 69727967T DE 69727967 T DE69727967 T DE 69727967T DE 69727967 D1 DE69727967 D1 DE 69727967D1
- Authority
- DE
- Germany
- Prior art keywords
- hanged
- producing
- micromechanical structure
- micromechanical
- hanged element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9616198 | 1996-12-30 | ||
FR9616198A FR2757941B1 (fr) | 1996-12-30 | 1996-12-30 | Procede de realisation d'un element suspendu dans une structure micro-usinee |
PCT/FR1997/002437 WO1998029720A1 (fr) | 1996-12-30 | 1997-12-29 | Procede de realisation d'un element suspendu dans une structure micro-usinee |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69727967D1 true DE69727967D1 (de) | 2004-04-08 |
DE69727967T2 DE69727967T2 (de) | 2005-02-10 |
Family
ID=9499286
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69727967T Expired - Lifetime DE69727967T2 (de) | 1996-12-30 | 1997-12-29 | Verfahren zur herstellung eines aufgehängten elementes in einer mikromechanischen struktur |
Country Status (6)
Country | Link |
---|---|
US (1) | US6365056B1 (de) |
EP (1) | EP0950172B1 (de) |
JP (1) | JP2001507289A (de) |
DE (1) | DE69727967T2 (de) |
FR (1) | FR2757941B1 (de) |
WO (1) | WO1998029720A1 (de) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4501307B2 (ja) * | 2001-04-16 | 2010-07-14 | ソニー株式会社 | 3次元構造物の形成方法 |
JP4306149B2 (ja) * | 2001-05-28 | 2009-07-29 | 株式会社デンソー | 半導体装置の製造方法 |
JP2003273369A (ja) * | 2002-03-18 | 2003-09-26 | Denso Corp | 半導体装置の製造方法 |
JP4117450B2 (ja) * | 2002-03-18 | 2008-07-16 | 株式会社デンソー | 半導体装置の製造方法 |
DE10333995B4 (de) | 2003-07-25 | 2018-10-25 | Robert Bosch Gmbh | Verfahren zum Ätzen eines Halbleitermaterials |
DE102004043233B4 (de) * | 2003-09-10 | 2014-02-13 | Denso Corporation | Verfahren zum Herstellen eines beweglichen Abschnitts einer Halbleitervorrichtung |
JP4161857B2 (ja) * | 2003-09-10 | 2008-10-08 | 株式会社デンソー | 半導体装置の製造方法 |
US7803178B2 (en) | 2004-01-30 | 2010-09-28 | Trivascular, Inc. | Inflatable porous implants and methods for drug delivery |
KR100727185B1 (ko) | 2005-07-28 | 2007-06-13 | 현대자동차주식회사 | Soi 기판상에서 실리콘 부양구조물의 제조방법 |
KR100748741B1 (ko) | 2005-07-28 | 2007-08-13 | 현대자동차주식회사 | 교차 접합된 soi 웨이퍼를 이용한 실리콘 부양구조물의제조방법 |
US7939355B2 (en) * | 2005-10-13 | 2011-05-10 | The Regents Of The University Of California | Single-mask fabrication process for linear and angular piezoresistive accelerometers |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4472239A (en) * | 1981-10-09 | 1984-09-18 | Honeywell, Inc. | Method of making semiconductor device |
JPS5889859A (ja) * | 1981-11-24 | 1983-05-28 | Oki Electric Ind Co Ltd | シリコンウエ−ハ上へのマイクロ片持ち梁の作製法 |
US4457820A (en) * | 1981-12-24 | 1984-07-03 | International Business Machines Corporation | Two step plasma etching |
US4600934A (en) * | 1984-01-06 | 1986-07-15 | Harry E. Aine | Method of undercut anisotropic etching of semiconductor material |
US4685198A (en) * | 1985-07-25 | 1987-08-11 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing isolated semiconductor devices |
US5198390A (en) * | 1992-01-16 | 1993-03-30 | Cornell Research Foundation, Inc. | RIE process for fabricating submicron, silicon electromechanical structures |
KR970000538B1 (ko) * | 1993-04-27 | 1997-01-13 | 엘지전자 주식회사 | 게이트 리세스 구조를 갖는 전계효과트랜지스터의 제조방법 |
US5427975A (en) * | 1993-05-10 | 1995-06-27 | Delco Electronics Corporation | Method of micromachining an integrated sensor on the surface of a silicon wafer |
US6020272A (en) * | 1998-10-08 | 2000-02-01 | Sandia Corporation | Method for forming suspended micromechanical structures |
-
1996
- 1996-12-30 FR FR9616198A patent/FR2757941B1/fr not_active Expired - Fee Related
-
1997
- 1997-12-29 EP EP97953960A patent/EP0950172B1/de not_active Expired - Lifetime
- 1997-12-29 US US09/331,255 patent/US6365056B1/en not_active Expired - Fee Related
- 1997-12-29 WO PCT/FR1997/002437 patent/WO1998029720A1/fr active IP Right Grant
- 1997-12-29 JP JP52970398A patent/JP2001507289A/ja active Pending
- 1997-12-29 DE DE69727967T patent/DE69727967T2/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
FR2757941A1 (fr) | 1998-07-03 |
WO1998029720A1 (fr) | 1998-07-09 |
EP0950172A1 (de) | 1999-10-20 |
FR2757941B1 (fr) | 1999-01-22 |
JP2001507289A (ja) | 2001-06-05 |
EP0950172B1 (de) | 2004-03-03 |
US6365056B1 (en) | 2002-04-02 |
DE69727967T2 (de) | 2005-02-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69608724D1 (de) | Verfahren zur Herstellung eines mikromechanischen Teiles | |
DE69718578D1 (de) | Verfahren zur Herstellung eines Silber-Sols | |
DE59409076D1 (de) | Verfahren zur herstellung oberflächen-mikromechanischer strukturen | |
DE69721279T2 (de) | Verfahren zur herstellung eines mechanischen verschlusses | |
DE69730822D1 (de) | Verfahren zur herstellung eines thermionischen elements | |
DE69826934D1 (de) | Verfahren zur Herstellung einer Doppel-Damaszener Struktur | |
DE69906491D1 (de) | VERFAHREN ZUR HERSTELLUNG EINER SiCOI-STRUKTUR | |
DE69504792T2 (de) | Verfahren zur Herstellung eines Kieselsols in Propanol | |
DE69707118T2 (de) | Verfahren zur herstellung eines glasartikels | |
DE69734843D1 (de) | Verfahren zur Herstellung eines gegossenen Artikels | |
DE60118126D1 (de) | Verfahren zur Herstellung einer Spiegelstruktur | |
DE950125T1 (de) | Verfahren zur herstellung eines diamantbeschichteten gegenstandes | |
DE69513360T2 (de) | Verfahren zur Herstellung eines hohlen Strukturelements und hohles Strukturelement | |
DE69803377T2 (de) | Verfahren zur herstellung eines mikrosensors mit mikrogefertigtem silizium | |
DE69624689D1 (de) | Verfahren zur herstellung einer dreidimensionalen struktur aus leichtzement | |
DE69727967D1 (de) | Verfahren zur herstellung eines aufgehängten elementes in einer mikromechanischen struktur | |
DE69820427D1 (de) | Verfahren zur herstellung eines schalldämpfers | |
DE59800621D1 (de) | Verfahren zur Herstellung einer mikromechanischen Halbleiteranordnung | |
DE69517953D1 (de) | Verfahren zur herstellung eines widerstands | |
ATE183218T1 (de) | Verfahren zur herstellung eines hohlkörpers | |
DE60116839D1 (de) | Verfahren zur Herstellung einer Spiegelstruktur | |
DE59510494D1 (de) | Verfahren zur Herstellung eines polygonalen Quarzglasstabes | |
DE59814258D1 (de) | Verfahren zur herstellung eines flexiblen leitungsstranges | |
DE69907854D1 (de) | Verfahren zur Herstellung eines Entfeuchtungselements | |
DE59507823D1 (de) | Verfahren zur herstellung einer metallischen struktur |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |