DE69724882D1 - Hochfrequenz-FET - Google Patents

Hochfrequenz-FET

Info

Publication number
DE69724882D1
DE69724882D1 DE69724882T DE69724882T DE69724882D1 DE 69724882 D1 DE69724882 D1 DE 69724882D1 DE 69724882 T DE69724882 T DE 69724882T DE 69724882 T DE69724882 T DE 69724882T DE 69724882 D1 DE69724882 D1 DE 69724882D1
Authority
DE
Germany
Prior art keywords
high frequency
frequency fet
fet
frequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69724882T
Other languages
English (en)
Other versions
DE69724882T2 (de
Inventor
Koichi Sakamoto
Yohei Ishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Publication of DE69724882D1 publication Critical patent/DE69724882D1/de
Application granted granted Critical
Publication of DE69724882T2 publication Critical patent/DE69724882T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/4175—Source or drain electrodes for field effect devices for lateral devices where the connection to the source or drain region is done through at least one part of the semiconductor substrate thickness, e.g. with connecting sink or with via-hole
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Microwave Amplifiers (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE69724882T 1996-06-28 1997-06-27 Hochfrequenz-FET Expired - Fee Related DE69724882T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP18814896A JP3235476B2 (ja) 1996-06-28 1996-06-28 高周波半導体デバイス
JP18814896 1996-06-28

Publications (2)

Publication Number Publication Date
DE69724882D1 true DE69724882D1 (de) 2003-10-23
DE69724882T2 DE69724882T2 (de) 2004-07-08

Family

ID=16218596

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69724882T Expired - Fee Related DE69724882T2 (de) 1996-06-28 1997-06-27 Hochfrequenz-FET

Country Status (5)

Country Link
US (1) US5889297A (de)
EP (1) EP0817275B1 (de)
JP (1) JP3235476B2 (de)
KR (1) KR100267816B1 (de)
DE (1) DE69724882T2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3189691B2 (ja) * 1996-07-10 2001-07-16 株式会社村田製作所 高周波半導体デバイス
JP3622732B2 (ja) * 2002-02-27 2005-02-23 株式会社村田製作所 電界効果トランジスタ素子
JP2005251435A (ja) 2004-03-01 2005-09-15 Koito Mfg Co Ltd 車両用前照灯
WO2007149046A1 (en) * 2006-06-22 2007-12-27 Meds Technologies Pte Ltd Quasi-planar circuits with air cavities
CN103633046B (zh) * 2013-12-13 2017-03-15 苏州能讯高能半导体有限公司 半导体器件及其制造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3737743A (en) * 1971-12-23 1973-06-05 Gen Electric High power microwave field effect transistor
US4315272A (en) * 1979-05-21 1982-02-09 Raytheon Company Field effect transistor
JPS62115783A (ja) * 1985-11-14 1987-05-27 Mitsubishi Electric Corp 半導体装置
JPS63164504A (ja) * 1986-12-25 1988-07-07 A T R Koudenpa Tsushin Kenkyusho:Kk 半導体装置
US5168329A (en) * 1989-11-06 1992-12-01 Sumitomo Electric Industries, Ltd. Microwave semiconductor device capable of controlling a threshold voltage
JP2797602B2 (ja) * 1990-02-07 1998-09-17 三菱電機株式会社 電界効果型トランジスタの電極パターン
JPH03270024A (ja) * 1990-03-19 1991-12-02 Nec Corp 高出力ｆｅｔチップ

Also Published As

Publication number Publication date
EP0817275A2 (de) 1998-01-07
EP0817275B1 (de) 2003-09-17
JPH1022302A (ja) 1998-01-23
KR100267816B1 (ko) 2000-10-16
DE69724882T2 (de) 2004-07-08
US5889297A (en) 1999-03-30
JP3235476B2 (ja) 2001-12-04
EP0817275A3 (de) 1999-07-07
KR980006513A (ko) 1998-03-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee