DE69724327D1 - Leistungsreduzierung während eines Blockschreibens - Google Patents

Leistungsreduzierung während eines Blockschreibens

Info

Publication number
DE69724327D1
DE69724327D1 DE69724327T DE69724327T DE69724327D1 DE 69724327 D1 DE69724327 D1 DE 69724327D1 DE 69724327 T DE69724327 T DE 69724327T DE 69724327 T DE69724327 T DE 69724327T DE 69724327 D1 DE69724327 D1 DE 69724327D1
Authority
DE
Germany
Prior art keywords
performance during
reduced performance
during block
block writing
writing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69724327T
Other languages
English (en)
Other versions
DE69724327T2 (de
Inventor
Ray Pinkham
Cheow F Yeo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix America Inc
Original Assignee
Hyundai Electronics America Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics America Inc filed Critical Hyundai Electronics America Inc
Application granted granted Critical
Publication of DE69724327D1 publication Critical patent/DE69724327D1/de
Publication of DE69724327T2 publication Critical patent/DE69724327T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1075—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers for multiport memories each having random access ports and serial ports, e.g. video RAM

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
DE69724327T 1996-05-17 1997-05-03 Leistungsreduzierung während eines Blockschreibens Expired - Lifetime DE69724327T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US64939996A 1996-05-17 1996-05-17
US649399 1996-05-17

Publications (2)

Publication Number Publication Date
DE69724327D1 true DE69724327D1 (de) 2003-10-02
DE69724327T2 DE69724327T2 (de) 2004-06-17

Family

ID=24604615

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69724327T Expired - Lifetime DE69724327T2 (de) 1996-05-17 1997-05-03 Leistungsreduzierung während eines Blockschreibens

Country Status (7)

Country Link
US (1) US5781496A (de)
EP (1) EP0810607B1 (de)
JP (1) JP4559545B2 (de)
KR (1) KR100259371B1 (de)
CN (1) CN1149577C (de)
DE (1) DE69724327T2 (de)
TW (1) TW330298B (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5900887A (en) * 1997-05-05 1999-05-04 Neomagic Corp. Multiplexed wide interface to SGRAM on a graphics controller for complex-pattern fills without color and mask registers
US6009501A (en) 1997-06-18 1999-12-28 Micron Technology, Inc. Method and apparatus for local control signal generation in a memory device
US6032220A (en) * 1997-07-18 2000-02-29 Micron Technology, Inc. Memory device with dual timing and signal latching control
US5999482A (en) * 1997-10-24 1999-12-07 Artisan Components, Inc. High speed memory self-timing circuitry and methods for implementing the same
WO1999022377A1 (en) * 1997-10-25 1999-05-06 Artisan Components, Inc. Low power differential signal transition techniques for use in memory devices
US6560669B1 (en) * 1998-05-19 2003-05-06 Micron Technology, Inc. Double data rate synchronous memory with block-write
US6457094B2 (en) * 1999-01-22 2002-09-24 Winbond Electronics Corporation Memory array architecture supporting block write operation
US6657634B1 (en) * 1999-02-25 2003-12-02 Ati International Srl Dynamic graphics and/or video memory power reducing circuit and method
KR100297726B1 (ko) * 1999-04-29 2001-09-26 윤종용 기입 인터럽트 기입 기능을 갖는 동기식 디램반도체 장치
DE19924288B4 (de) 1999-05-27 2006-08-31 Infineon Technologies Ag Integrierter Speicher
DE19929174C2 (de) 1999-06-25 2001-09-27 Infineon Technologies Ag Integrierte Schaltung mit einem Kommandodekoder
JP2001052479A (ja) * 1999-08-06 2001-02-23 Mitsubishi Electric Corp メモリ装置
US6535450B1 (en) * 2000-08-18 2003-03-18 Micron Technology, Inc. Method for selecting one or a bank of memory devices
US6646954B2 (en) * 2001-02-02 2003-11-11 Broadcom Corporation Synchronous controlled, self-timed local SRAM block
US6714467B2 (en) * 2002-03-19 2004-03-30 Broadcom Corporation Block redundancy implementation in heirarchical RAM's
US6501688B2 (en) * 2001-05-30 2002-12-31 Micron Technology, Inc. tRCD margin
KR100403345B1 (ko) * 2001-09-14 2003-11-01 주식회사 하이닉스반도체 반도체 메모리 장치의 라이트 동작회로
US6760243B2 (en) * 2002-03-19 2004-07-06 Broadcom Corporation Distributed, highly configurable modular predecoding
US7343508B2 (en) 2004-03-05 2008-03-11 Ati Technologies Inc. Dynamic clock control circuit for graphics engine clock and memory clock and method
US7500123B2 (en) * 2004-06-28 2009-03-03 Ati Technologies Ulc Apparatus and method for reducing power consumption in a graphics processing device
US7827424B2 (en) * 2004-07-29 2010-11-02 Ati Technologies Ulc Dynamic clock control circuit and method
US7110304B1 (en) * 2004-08-26 2006-09-19 Altera Corporation Dual port memory array using shared write drivers and read sense amplifiers
KR100666929B1 (ko) * 2004-10-30 2007-01-11 주식회사 하이닉스반도체 메모리 뱅크 구조
US7800621B2 (en) * 2005-05-16 2010-09-21 Ati Technologies Inc. Apparatus and methods for control of a memory controller
US7430148B2 (en) * 2005-11-17 2008-09-30 Altera Corporation Volatile memory elements with boosted output voltages for programmable logic device integrated circuits
US8799685B2 (en) 2010-08-25 2014-08-05 Advanced Micro Devices, Inc. Circuits and methods for providing adjustable power consumption
CN108320775B (zh) * 2017-01-18 2022-03-22 中芯国际集成电路制造(上海)有限公司 Sram单元及其检测方法、sram单元的检测系统和sram器件
CN112712833A (zh) * 2019-10-25 2021-04-27 长鑫存储技术(上海)有限公司 写操作电路、半导体存储器和写操作方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4667313A (en) * 1985-01-22 1987-05-19 Texas Instruments Incorporated Serially accessed semiconductor memory with tapped shift register
US4817058A (en) * 1987-05-21 1989-03-28 Texas Instruments Incorporated Multiple input/output read/write memory having a multiple-cycle write mask
DE3884859T2 (de) * 1987-06-04 1994-02-03 Nec Corp Dynamische Speicherschaltung mit einem Abfühlschema.
US4985643A (en) * 1988-06-24 1991-01-15 National Semiconductor Corporation Speed enhancement technique for CMOS circuits
JPH04216392A (ja) * 1990-12-18 1992-08-06 Mitsubishi Electric Corp ブロックライト機能を備える半導体記憶装置
JP2947664B2 (ja) * 1992-03-30 1999-09-13 株式会社東芝 画像専用半導体記憶装置
US5506814A (en) * 1993-05-28 1996-04-09 Micron Technology, Inc. Video random access memory device and method implementing independent two WE nibble control
JPH0729373A (ja) * 1993-07-08 1995-01-31 Mitsubishi Electric Corp 半導体記憶装置
US5533187A (en) * 1993-10-29 1996-07-02 Sun Microsystems, Inc Multiple block mode operations in a frame buffer system designed for windowing operations

Also Published As

Publication number Publication date
DE69724327T2 (de) 2004-06-17
CN1167323A (zh) 1997-12-10
KR100259371B1 (ko) 2000-06-15
US5781496A (en) 1998-07-14
EP0810607A2 (de) 1997-12-03
EP0810607A3 (de) 1999-06-09
TW330298B (en) 1998-04-21
KR970076850A (ko) 1997-12-12
JPH1055664A (ja) 1998-02-24
EP0810607B1 (de) 2003-08-27
CN1149577C (zh) 2004-05-12
JP4559545B2 (ja) 2010-10-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition