DE69723566D1 - Verfahren zur Behandlung eines Halbleitersubstrates - Google Patents

Verfahren zur Behandlung eines Halbleitersubstrates

Info

Publication number
DE69723566D1
DE69723566D1 DE69723566T DE69723566T DE69723566D1 DE 69723566 D1 DE69723566 D1 DE 69723566D1 DE 69723566 T DE69723566 T DE 69723566T DE 69723566 T DE69723566 T DE 69723566T DE 69723566 D1 DE69723566 D1 DE 69723566D1
Authority
DE
Germany
Prior art keywords
treating
semiconductor substrate
semiconductor
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69723566T
Other languages
English (en)
Other versions
DE69723566T2 (de
Inventor
Masahiro Hisada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Application granted granted Critical
Publication of DE69723566D1 publication Critical patent/DE69723566D1/de
Publication of DE69723566T2 publication Critical patent/DE69723566T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/3222—Antennas

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
DE1997623566 1997-12-17 1997-12-17 Verfahren zur Behandlung eines Halbleitersubstrates Expired - Lifetime DE69723566T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP19970122263 EP0926716B1 (de) 1997-12-17 1997-12-17 Verfahren zur Behandlung eines Halbleitersubstrates

Publications (2)

Publication Number Publication Date
DE69723566D1 true DE69723566D1 (de) 2003-08-21
DE69723566T2 DE69723566T2 (de) 2004-06-03

Family

ID=8227818

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1997623566 Expired - Lifetime DE69723566T2 (de) 1997-12-17 1997-12-17 Verfahren zur Behandlung eines Halbleitersubstrates

Country Status (2)

Country Link
EP (1) EP0926716B1 (de)
DE (1) DE69723566T2 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2349033A1 (en) * 2001-05-28 2002-11-28 Optenia, Inc. Initial plasma treatment for vertical dry etching of sio2
CN102810456B (zh) * 2011-06-02 2015-09-09 无锡华润上华半导体有限公司 腔体预热方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5477975A (en) * 1993-10-15 1995-12-26 Applied Materials Inc Plasma etch apparatus with heated scavenging surfaces
JPH0684851A (ja) * 1992-09-01 1994-03-25 Mitsubishi Electric Corp プラズマエッチング方法およびプラズマ処理装置
JPH07273086A (ja) * 1994-03-30 1995-10-20 Sumitomo Metal Ind Ltd プラズマ処理装置及び該装置を用いたプラズマ処理方法
JPH08186082A (ja) * 1994-12-28 1996-07-16 Nec Corp 半導体装置の製造方法
US5759360A (en) * 1995-03-13 1998-06-02 Applied Materials, Inc. Wafer clean sputtering process
US6170428B1 (en) * 1996-07-15 2001-01-09 Applied Materials, Inc. Symmetric tunable inductively coupled HDP-CVD reactor

Also Published As

Publication number Publication date
EP0926716B1 (de) 2003-07-16
DE69723566T2 (de) 2004-06-03
EP0926716A1 (de) 1999-06-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition