DE69722702D1 - Halbleiterdehnungssensoren mit pn Übergang, Rastersondenmikroskop - Google Patents

Halbleiterdehnungssensoren mit pn Übergang, Rastersondenmikroskop

Info

Publication number
DE69722702D1
DE69722702D1 DE69722702T DE69722702T DE69722702D1 DE 69722702 D1 DE69722702 D1 DE 69722702D1 DE 69722702 T DE69722702 T DE 69722702T DE 69722702 T DE69722702 T DE 69722702T DE 69722702 D1 DE69722702 D1 DE 69722702D1
Authority
DE
Germany
Prior art keywords
transition
scanning probe
probe microscope
strain sensors
semiconductor strain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69722702T
Other languages
English (en)
Other versions
DE69722702T2 (de
Inventor
Hiroshi Takahashi
Yoshiharu Shirakawabe
Nobuhiro Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SII NANOTECHNOLOGY INC., CHIBA, JP
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP08097120A external-priority patent/JP3124485B2/ja
Priority claimed from JP04437297A external-priority patent/JP3433782B2/ja
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Application granted granted Critical
Publication of DE69722702D1 publication Critical patent/DE69722702D1/de
Publication of DE69722702T2 publication Critical patent/DE69722702T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q20/00—Monitoring the movement or position of the probe
    • G01Q20/04—Self-detecting probes, i.e. wherein the probe itself generates a signal representative of its position, e.g. piezoelectric gauge
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y35/00—Methods or apparatus for measurement or analysis of nanostructures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/16—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge
    • G01B7/18—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge using change in resistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
    • G01Q60/24—AFM [Atomic Force Microscopy] or apparatus therefor, e.g. AFM probes
    • G01Q60/38—Probes, their manufacture, or their related instrumentation, e.g. holders
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
    • Y10S977/86—Scanning probe structure
    • Y10S977/873—Tip holder

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Radiology & Medical Imaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Length Measuring Devices With Unspecified Measuring Means (AREA)
DE69722702T 1996-04-18 1997-04-17 Halbleiterdehnungssensoren mit pn Übergang, Rastersondenmikroskop Expired - Lifetime DE69722702T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP9712096 1996-04-18
JP08097120A JP3124485B2 (ja) 1996-04-18 1996-04-18 半導体歪センサおよび走査型原子間力顕微鏡用カンチレバー
JP4437297 1997-02-27
JP04437297A JP3433782B2 (ja) 1997-02-27 1997-02-27 走査プローブ顕微鏡およびその半導体歪センサならびにその製造方法

Publications (2)

Publication Number Publication Date
DE69722702D1 true DE69722702D1 (de) 2003-07-17
DE69722702T2 DE69722702T2 (de) 2004-04-29

Family

ID=26384242

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69722702T Expired - Lifetime DE69722702T2 (de) 1996-04-18 1997-04-17 Halbleiterdehnungssensoren mit pn Übergang, Rastersondenmikroskop

Country Status (3)

Country Link
US (1) US6049115A (de)
EP (1) EP0802394B1 (de)
DE (1) DE69722702T2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11304825A (ja) * 1997-09-30 1999-11-05 Seiko Instruments Inc 半導体歪センサおよびその製造方法ならびに走査型プローブ顕微鏡
JP3700910B2 (ja) * 1997-10-16 2005-09-28 セイコーインスツル株式会社 半導体歪センサ及びその製造方法ならびに走査プローブ顕微鏡
JP3883699B2 (ja) * 1997-11-20 2007-02-21 エスアイアイ・ナノテクノロジー株式会社 自己検知型ｓｐｍプローブ及びｓｐｍ装置
DE19820358C1 (de) * 1998-05-07 1999-08-05 Leuze Electronic Gmbh & Co Optoelektronischer Sensor
US7763947B2 (en) * 2002-04-23 2010-07-27 Sharp Laboratories Of America, Inc. Piezo-diode cantilever MEMS
US7041963B2 (en) * 2003-11-26 2006-05-09 Massachusetts Institute Of Technology Height calibration of scanning probe microscope actuators
EP1550850A1 (de) * 2003-12-29 2005-07-06 STMicroelectronics S.r.l. Lese-/-Schreib-Gerät für Massenspeichergerät und Lese-/-Schreibverfahren dafür
EP1757919A1 (de) * 2004-06-04 2007-02-28 Pioneer Corporation Verfahren zur herstellung von sondenköpfen
JP2018044811A (ja) * 2016-09-13 2018-03-22 株式会社村田製作所 ピエゾ抵抗型センサ
US11933683B2 (en) * 2020-09-03 2024-03-19 Te Connectivity Solutions Gmbh Strain gauge and strain measurement assembly

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4422063A (en) * 1982-04-01 1983-12-20 Pitney Bowes Inc. Semiconductor strain gauge
JP2532149B2 (ja) * 1990-02-06 1996-09-11 本田技研工業株式会社 半導体センサ
JPH05196458A (ja) * 1991-01-04 1993-08-06 Univ Leland Stanford Jr 原子力顕微鏡用ピエゾ抵抗性片持ばり構造体
US5444244A (en) * 1993-06-03 1995-08-22 Park Scientific Instruments Corporation Piezoresistive cantilever with integral tip for scanning probe microscope
US5489774A (en) * 1994-09-20 1996-02-06 The Board Of Trustees Of The Leland Stanford University Combined atomic force and near field scanning optical microscope with photosensitive cantilever

Also Published As

Publication number Publication date
EP0802394A1 (de) 1997-10-22
DE69722702T2 (de) 2004-04-29
EP0802394B1 (de) 2003-06-11
US6049115A (en) 2000-04-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: SII NANOTECHNOLOGY INC., CHIBA, JP