DE69720435D1 - Beschichtungslösung für Zinn-Silber-Legierungen und Verfahren zur Beschichtung mit dieser Lösung - Google Patents
Beschichtungslösung für Zinn-Silber-Legierungen und Verfahren zur Beschichtung mit dieser LösungInfo
- Publication number
- DE69720435D1 DE69720435D1 DE69720435T DE69720435T DE69720435D1 DE 69720435 D1 DE69720435 D1 DE 69720435D1 DE 69720435 T DE69720435 T DE 69720435T DE 69720435 T DE69720435 T DE 69720435T DE 69720435 D1 DE69720435 D1 DE 69720435D1
- Authority
- DE
- Germany
- Prior art keywords
- coating
- solution
- tin
- silver alloys
- coating solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
- C25D3/60—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of tin
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
- C25D3/64—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of silver
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/03—Manufacturing methods
- H01L2224/039—Methods of manufacturing bonding areas involving a specific sequence of method steps
- H01L2224/03912—Methods of manufacturing bonding areas involving a specific sequence of method steps the bump being used as a mask for patterning the bonding area
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01011—Sodium [Na]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01022—Titanium [Ti]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0103—Zinc [Zn]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01058—Cerium [Ce]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
- H01L2924/15747—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
- H05K3/244—Finish plating of conductors, especially of copper conductors, e.g. for pads or lands
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3457—Solder materials or compositions; Methods of application thereof
- H05K3/3473—Plating of solder
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrochemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Electroplating Methods And Accessories (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3749696 | 1996-01-30 | ||
JP3749696 | 1996-01-30 | ||
JP7524596 | 1996-03-04 | ||
JP7524596 | 1996-03-04 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69720435D1 true DE69720435D1 (de) | 2003-05-08 |
DE69720435T2 DE69720435T2 (de) | 2004-01-08 |
Family
ID=26376623
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69720435T Expired - Lifetime DE69720435T2 (de) | 1996-01-30 | 1997-01-30 | Beschichtungslösung für Zinn-Silber-Legierungen und Verfahren zur Beschichtung mit dieser Lösung |
Country Status (6)
Country | Link |
---|---|
US (1) | US5902472A (de) |
EP (2) | EP0818563A1 (de) |
KR (1) | KR100268967B1 (de) |
AU (1) | AU1556297A (de) |
DE (1) | DE69720435T2 (de) |
WO (1) | WO1997028296A1 (de) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6264093B1 (en) * | 1998-11-02 | 2001-07-24 | Raymond W. Pilukaitis | Lead-free solder process for printed wiring boards |
US6245208B1 (en) * | 1999-04-13 | 2001-06-12 | Governors Of The University Of Alberta | Codepositing of gold-tin alloys |
JP2001230360A (ja) * | 2000-02-18 | 2001-08-24 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
DE10014852A1 (de) * | 2000-03-24 | 2001-09-27 | Enthone Omi Deutschland Gmbh | Verfahren zur Abscheidung einer Silber-Zinn-Legierung |
US6638847B1 (en) * | 2000-04-19 | 2003-10-28 | Advanced Interconnect Technology Ltd. | Method of forming lead-free bump interconnections |
DE10025107A1 (de) * | 2000-05-20 | 2001-11-22 | Stolberger Metallwerke Gmbh | Elektrisch leifähiges Metallband und Steckverbinder |
DE10026680C1 (de) | 2000-05-30 | 2002-02-21 | Schloetter Fa Dr Ing Max | Elektrolyt und Verfahren zur Abscheidung von Zinn-Silber-Legierungsschichten und Verwendung des Elektrolyten |
JP3395772B2 (ja) * | 2000-11-20 | 2003-04-14 | 松下電器産業株式会社 | 錫−銀合金めっき皮膜の製造方法及び錫−銀合金めっき皮膜及びそれを備えた電子部品用リードフレーム |
US6924044B2 (en) | 2001-08-14 | 2005-08-02 | Snag, Llc | Tin-silver coatings |
JP4016637B2 (ja) * | 2001-10-24 | 2007-12-05 | 松下電器産業株式会社 | 錫−銀合金めっき皮膜を有する電子部品用リードフレーム及びその製造方法 |
CA2365749A1 (en) * | 2001-12-20 | 2003-06-20 | The Governors Of The University Of Alberta | An electrodeposition process and a layered composite material produced thereby |
WO2003063067A1 (en) * | 2002-01-24 | 2003-07-31 | Chatterbox Systems, Inc. | Method and system for locating positions in printed texts and delivering multimedia information |
WO2003085713A1 (en) * | 2002-04-03 | 2003-10-16 | Applied Materials, Inc. | Homogeneous copper-tin alloy plating for enhancement of electro-migration resistance in interconnects |
US7344970B2 (en) | 2002-04-11 | 2008-03-18 | Shipley Company, L.L.C. | Plating method |
US20040118699A1 (en) * | 2002-10-02 | 2004-06-24 | Applied Materials, Inc. | Homogeneous copper-palladium alloy plating for enhancement of electro-migration resistance in interconnects |
US7012333B2 (en) * | 2002-12-26 | 2006-03-14 | Ebara Corporation | Lead free bump and method of forming the same |
CN100402707C (zh) * | 2003-06-25 | 2008-07-16 | 中国科学院金属研究所 | 碱性Sn-Ag合金镀液及其电镀方法 |
US20050085062A1 (en) * | 2003-10-15 | 2005-04-21 | Semitool, Inc. | Processes and tools for forming lead-free alloy solder precursors |
CN1319129C (zh) * | 2003-11-28 | 2007-05-30 | 悠立半导体股份有限公司 | 焊锡凸块的形成方法 |
CN100550506C (zh) * | 2005-02-18 | 2009-10-14 | 索尼株式会社 | 电解液和电池 |
US8177945B2 (en) | 2007-01-26 | 2012-05-15 | International Business Machines Corporation | Multi-anode system for uniform plating of alloys |
TWI460535B (zh) | 2007-03-12 | 2014-11-11 | 羅門哈斯電子材料有限公司 | 酚系聚合物及含該酚系聚合物之光阻 |
US20080308300A1 (en) * | 2007-06-18 | 2008-12-18 | Conti Mark A | Method of manufacturing electrically conductive strips |
ATE465283T1 (de) * | 2008-02-29 | 2010-05-15 | Atotech Deutschland Gmbh | Pyrophosphat-basiertes bad zur abscheidung von zinn-legierungsschichten |
KR101877360B1 (ko) | 2009-12-15 | 2018-07-11 | 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 | 포토레지스트 및 그의 사용방법 |
EP2336829B1 (de) | 2009-12-15 | 2019-01-23 | Rohm and Haas Electronic Materials LLC | Fotoresiste und Verfahren zu deren Verwendung |
US10295910B2 (en) | 2009-12-15 | 2019-05-21 | Rohm And Haas Electronic Materials Llc | Photoresists and methods of use thereof |
EP2472327A1 (de) | 2010-12-30 | 2012-07-04 | Rohm and Haas Electronic Materials LLC | Fotoresiste und Verwendungsverfahren dafür |
KR101346021B1 (ko) * | 2011-12-09 | 2013-12-31 | 주식회사 엠에스씨 | 주석-은 합금 도금액의 생성방법 및 그 도금액 |
DE102011088211A1 (de) * | 2011-12-12 | 2013-06-13 | Robert Bosch Gmbh | Kontaktelement und Verfahren zu seiner Herstellung |
US9604316B2 (en) | 2014-09-23 | 2017-03-28 | Globalfoundries Inc. | Tin-based solder composition with low void characteristic |
CN106757213A (zh) * | 2016-11-15 | 2017-05-31 | 惠州市力道电子材料有限公司 | 一种无氰镀银锡合金的电镀液及其电镀方法 |
US11280014B2 (en) * | 2020-06-05 | 2022-03-22 | Macdermid Enthone Inc. | Silver/tin electroplating bath and method of using the same |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SU406950A1 (ru) * | 1971-09-06 | 1973-11-21 | Способ электролитического осаждения сплава серебро- кобальт | |
US3914161A (en) * | 1972-06-16 | 1975-10-21 | Matsushita Electric Ind Co Ltd | Electroplating solutions for depositing silver alloys and a method of forming silver alloys by electroplating |
JPS543142B2 (de) * | 1972-06-16 | 1979-02-19 | ||
JPS543810B2 (de) * | 1972-06-21 | 1979-02-27 | ||
US4072605A (en) * | 1975-11-28 | 1978-02-07 | Automated Medical Systems, Inc. | Method of obtaining a precipitate of metallic ions from solutions containing low concentrations of metal salts |
JPS6026691A (ja) * | 1983-07-23 | 1985-02-09 | Kumamotoken | 銀−スズ合金めつき液 |
US5225096A (en) * | 1989-05-18 | 1993-07-06 | Colgate Palmolive Company | Linear viscoelastic aqueous liquid automatic dishwasher detergent composition having improved chlorine stability |
US6001289A (en) * | 1991-12-04 | 1999-12-14 | Materials Innovation, Inc. | Acid assisted cold welding and intermetallic formation |
-
1997
- 1997-01-30 KR KR1019970706859A patent/KR100268967B1/ko active IP Right Grant
- 1997-01-30 US US08/930,514 patent/US5902472A/en not_active Expired - Lifetime
- 1997-01-30 DE DE69720435T patent/DE69720435T2/de not_active Expired - Lifetime
- 1997-01-30 EP EP97901777A patent/EP0818563A1/de not_active Withdrawn
- 1997-01-30 EP EP98115964A patent/EP0893514B1/de not_active Expired - Lifetime
- 1997-01-30 AU AU15562/97A patent/AU1556297A/en not_active Abandoned
- 1997-01-30 WO PCT/JP1997/000209 patent/WO1997028296A1/ja active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
EP0893514A2 (de) | 1999-01-27 |
KR100268967B1 (ko) | 2000-10-16 |
US5902472A (en) | 1999-05-11 |
WO1997028296A1 (en) | 1997-08-07 |
EP0893514A3 (de) | 1999-07-28 |
EP0893514B1 (de) | 2003-04-02 |
DE69720435T2 (de) | 2004-01-08 |
AU1556297A (en) | 1997-08-22 |
KR19980703455A (ko) | 1998-11-05 |
EP0818563A1 (de) | 1998-01-14 |
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